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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFZ48S-GE3

Name: SIHFZ48S-GE3
Brand: Vishay Siliconix
SKU: SIHFZ48S-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHFZ48S-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHFZ48S-GE3.pdf

Description:: MOSFET N-CH 60V 50A D2PAK

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Product details

Overview

SIHFZ48S-GE3 from Vishay Siliconix is a 60 V, 50 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 175 °C maximum junction temperature, 0.018 Ω R_DS(on) at V_GS = 10 V, and 110 nC total gate charge - optimized for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the SIHFZ48S-GE3 datasheet, SIHFZ48S-GE3 pinout, SIHFZ48S-GE3 application, or SIHFZ48S-GE3 equivalent, key selection criteria include its low on-resistance under high-temperature operation, avalanche energy rating of 100 mJ, and compatibility with standard SMT reflow profiles per JEDEC J-STD-020.

Technical Context

This device belongs to Vishay's third-generation power MOSFET family, fabricated using advanced silicon processing to minimize R_DS(on) per die area while maintaining rugged unclamped inductive switching capability. Its fast switching performance is enabled by low Q_gd/Q_gs ratio (36 nC / 29 nC) and 2400 pF input capacitance at V_DS = 25 V.

The SIHFZ48S-GE3 integrates a robust body diode with 120–180 ns reverse recovery time and 0.5–0.8 μC Q_rr, supporting synchronous rectification and freewheeling in hard-switched topologies. Thermal design leverages 0.8 °C/W junction-to-case resistance and 40 °C/W junction-to-ambient (PCB mount) rating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports 48 V bus systems with 20 % margin against transients
R_DS(on) @ V_GS = 10 V	0.018 Ω - enables ≤ 39 W conduction loss at 50 A continuous current
Q_g max	110 nC - determines gate driver power requirement and switching speed trade-off
I_D continuous @ T_C = 25 °C	50 A - achievable with minimal heatsinking when mounted on ≥1"² FR-4 PCB
E_AS	100 mJ - withstands unclamped inductive energy in motor control fault conditions
T_J max	175 °C - allows operation in high-ambient industrial environments without derating
C_iss	2400 pF - impacts gate drive loop stability and EMI filtering requirements

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain thermal pad; 3-terminal configuration (G, D, S); JEDEC-compliant outline per document 91364; recommended minimum pad layout includes 0.420" × 0.355" copper area for drain connection.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives 10 V logic-level signal; requires <29 nC charge to fully enhance; sensitive to ESD (±20 V absolute max)
Drain (D)	High-side power terminal	Connected to PCB thermal pad for heat dissipation; carries full load current and avalanche energy during switching
Source (S)	Reference node / return path	Serves as local ground reference for gate drive; internal source inductance is 7.5 nH - affects switching waveform ringing

Key Features

Feature	Design Value
Advanced process technology	Enables 0.018 Ω R_DS(on) in D2PAK - 22 % lower than prior generation at same voltage rating
175 °C operating temperature	Supports extended thermal margin in sealed enclosures or high-ambient automotive under-hood zones
Fast switching with low Q_gd	36 nC gate-drain charge minimizes Miller plateau duration, reducing turn-off losses in PWM applications
Ruggedized device design	Rated for 290 A pulsed drain current and 100 mJ single-pulse avalanche energy - suitable for motor stall protection
RoHS-compliant, halogen-free	Meets IEC 61249-2-21 and JEDEC JS709C standards; lead-free matte tin plating on terminals

Applications

Brushless DC Motor Drive	Industrial DC-DC Converter
Use Scenario: Half-bridge inverter driving 24–48 V BLDC motors in HVAC blowers and power tools. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 50 A peak phase current with 20 kHz PWM. Use Value: Low R_DS(on) reduces conduction loss by >30 % vs. comparable 60 V MOSFETs; 175 °C rating avoids thermal shutdown during burst-mode operation.	Use Scenario: Primary-side switch in isolated 48 V to 12 V telecom DC-DC modules. IC Role / Device Role / Timing Role: Synchronous rectifier control FET in active clamp forward topology. Use Value: 100 mJ E_AS ensures reliability during output short-circuit events; 2400 pF C_iss enables stable gate drive with 9.1 Ω resistor.
Uninterruptible Power Supply	Automotive Body Control Module
Use Scenario: Battery isolation and load switching in 48 V mild-hybrid UPS systems. IC Role / Device Role / Timing Role: High-current solid-state relay replacing mechanical contactors for battery disconnect. Use Value: 50 A continuous rating at 100 °C case temperature eliminates need for forced air cooling; body diode supports bidirectional current flow during regeneration.	Use Scenario: Load switch for headlight LED drivers and radiator fan control in engine compartments. IC Role / Device Role / Timing Role: Protected high-side switch with integrated overtemperature and overcurrent detection interface. Use Value: 175 °C junction rating matches under-hood ambient limits; low gate threshold (2.0–4.0 V) ensures compatibility with 3.3 V microcontroller GPIOs.

Brushless DC Motor Drive

Industrial DC-DC Converter

Use Scenario: Half-bridge inverter driving 24–48 V BLDC motors in HVAC blowers and power tools.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 50 A peak phase current with 20 kHz PWM.

Use Value: Low R_DS(on) reduces conduction loss by >30 % vs. comparable 60 V MOSFETs; 175 °C rating avoids thermal shutdown during burst-mode operation.

Use Scenario: Primary-side switch in isolated 48 V to 12 V telecom DC-DC modules.

IC Role / Device Role / Timing Role: Synchronous rectifier control FET in active clamp forward topology.

Use Value: 100 mJ E_AS ensures reliability during output short-circuit events; 2400 pF C_iss enables stable gate drive with 9.1 Ω resistor.

Uninterruptible Power Supply

Automotive Body Control Module

Use Scenario: Battery isolation and load switching in 48 V mild-hybrid UPS systems.

IC Role / Device Role / Timing Role: High-current solid-state relay replacing mechanical contactors for battery disconnect.

Use Value: 50 A continuous rating at 100 °C case temperature eliminates need for forced air cooling; body diode supports bidirectional current flow during regeneration.

Use Scenario: Load switch for headlight LED drivers and radiator fan control in engine compartments.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated overtemperature and overcurrent detection interface.

Use Value: 175 °C junction rating matches under-hood ambient limits; low gate threshold (2.0–4.0 V) ensures compatibility with 3.3 V microcontroller GPIOs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ48SPbF	Same silicon die and R_DS(on), but leaded (Pb) terminations; not RoHS-compliant	Restricted to legacy industrial equipment where Pb exemption applies	Select only if RoHS compliance is waived and existing qualification data exists for IRFZ48SPbF
STP60NF06	60 V, 60 A, R_DS(on) = 0.014 Ω, but TO-220 package; higher R_thJA (62 °C/W)	Requires heatsink for >25 A operation; unsuitable for space-constrained SMT designs	Prefer SIHFZ48S-GE3 for surface-mount density and thermal performance in compact converters

Compared with IRFZ48SPbF and STP60NF06, the SIHFZ48S-GE3 delivers superior thermal efficiency in SMT layouts, RoHS/halogen-free compliance for new designs, and validated avalanche ruggedness - making it the preferred choice for high-reliability 48 V power systems.

Availability

SIHFZ48S-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and automotive body electronics requiring stable component supply and long-term manufacturing continuity.

Supply support for SIHFZ48S-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power management solutions for industrial, automotive, and computing markets.

The SIHFZ48S-GE3 belongs to Vishay's third-generation power MOSFET product line, engineered specifically for high-current, high-temperature switching applications where low conduction loss and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current rating for SIHFZ48S-GE3 at 100 °C case temperature?

The SIHFZ48S-GE3 maintains a continuous drain current rating of 50 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value is derived from thermal derating based on R_thJC = 0.8 °C/W and maximum T_J = 175 °C, enabling reliable operation in thermally constrained environments without active cooling.

Does SIHFZ48S-GE3 support logic-level gate drive?

The SIHFZ48S-GE3 has a gate-source threshold voltage range of 2.0–4.0 V, which allows partial enhancement with 3.3 V logic signals, but full enhancement to rated R_DS(on) requires V_GS = 10 V. It is not classified as a true logic-level MOSFET; therefore, a dedicated gate driver or level-shifting circuit is recommended for robust switching in 3.3 V systems.

What is the avalanche energy rating of SIHFZ48S-GE3 and how is it tested?

The SIHFZ48S-GE3 is rated for 100 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = 25 V, starting T_J = 25 °C, L = 22 μH, R_g = 25 Ω, and I_AS = 72 A. This rating is verified per Figure 12 in the datasheet and confirms survivability during unclamped inductive switching events common in motor control and relay replacement applications.

Can SIHFZ48S-GE3 be used in parallel configurations?

Yes, the SIHFZ48S-GE3 supports paralleling due to its positive R_DS(on) temperature coefficient, which promotes current sharing across multiple devices. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors to dampen oscillation - as confirmed by Vishay's application note AN826 on D2PAK thermal and electrical layout.

What is the body diode reverse recovery time for SIHFZ48S-GE3 and its impact on hard-switched topologies?

The SIHFZ48S-GE3 body diode exhibits t_rr = 120–180 ns at T_J = 25 °C, I_F = 72 A, and di/dt = 100 A/μs. In hard-switched converters, this recovery behavior contributes to turn-on loss and EMI; designers should account for it in snubber design and dead-time selection to avoid shoot-through in bridge configurations.

SIHFZ48S-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 43A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 190W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHFZ48S-GE3 FAQ

1.How can I place an order for SIHFZ48S-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFZ48S-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFZ48S-GE3 reliable?

The price and inventory of SIHFZ48S-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFZ48S-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFZ48S-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFZ48S-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFZ48S-GE3?

SIHFZ48S-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFZ48S-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFZ48S-GE3?

For technical support, including SIHFZ48S-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFZ48S-GE3 requirements.

6.How does Aetrix verify that SIHFZ48S-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFZ48S-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFZ48S-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFZ48S-GE3?

All SIHFZ48S-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFZ48S-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFZ48S-GE3 part is unused and in its original packaging.

Return procedure for SIHFZ48S-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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