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Vishay Siliconix SIHG039N60EF-GE3
- Part No.:
- SIHG039N60EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHG039N60EF-GE3.pdf
- Description:
- MOSFET N-CH 600V 61A TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:435
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Product details
Overview
SIHG039N60EF-GE3 from Vishay Siliconix is a 600 V, 61 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 36 mΩ RDS(on) at VGS = 10 V, 126 nC total gate charge, and fast body diode with 169 ns typical reverse recovery time. It delivers low conduction and switching losses for high-efficiency hard-switched PFC and SMPS stages in telecom rectifiers and solar inverters.
For engineers reviewing the SIHG039N60EF-GE3 datasheet, SIHG039N60EF-GE3 pinout, SIHG039N60EF-GE3 application, or SIHG039N60EF-GE3 equivalent, key selection criteria include its 600 V blocking rating, avalanche-rated 508 mJ UIS capability, low Co(er) of 139 pF, and validated performance in 100 kHz–300 kHz PFC boost converters requiring robust body diode commutation.
Technical Context
This EF-series MOSFET employs Vishay's 4th-generation E-series silicon technology optimized for high-voltage power conversion. Its low figure-of-merit (RDS(on) × Qg = 4.54 Ω·nC) enables reduced switching losses while maintaining low conduction loss at 61 A continuous drain current.
The integrated fast-recovery body diode supports high-di/dt operation (160 A/μs) with controlled reverse recovery charge (1.3–2.7 μC) and peak reverse recovery current (14.4 A), making it suitable for discontinuous-conduction-mode (DCM) and critical-conduction-mode (CrCM) topologies where diode softness impacts EMI and reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - Supports 400 V DC bus designs with ≥50 % voltage margin for surge and ringing |
| RDS(on) typ | 0.036 Ω @ VGS = 10 V - Enables <1.2 W conduction loss at 61 A, reducing heatsink requirements |
| Qg max | 126 nC - Determines gate drive power and influences switching speed in 100–300 kHz PFC stages |
| EAS | 508 mJ - Rated unclamped inductive switching energy ensures robustness during transient overloads |
| trr typ | 169 ns - Fast body diode recovery minimizes voltage overshoot and reduces snubber losses |
| Co(er) | 139 pF - Energy-related output capacitance directly impacts turn-off loss and ZVS feasibility |
| ID cont @ TC = 100 °C | 39 A - Specifies usable current derating for thermally constrained industrial enclosures |
Pinout & Package
SIHG039N60EF-GE3 is housed in a TO-247AC package with isolated drain tab, rated for 357 W maximum power dissipation and 0.35 °C/W junction-to-case thermal resistance. The package features four leads: Gate (pin 1), Drain (pins 2 and 4), Source (pin 3), with pins 2 and 4 electrically connected to the drain metallization and thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives 10 V logic-level drive; requires ≤1.4 Ω gate resistance to limit ringing per datasheet test conditions |
| 2 (Drain) | Main high-side power path | Connected internally to drain metallization and thermal pad; primary heat transfer path to heatsink |
| 3 (Source) | Power return and reference | Serves as local ground reference for gate drive; carries full load current and diode reverse recovery current |
| 4 (Drain) | Secondary drain connection | Electrically tied to pin 2; provides redundant current path and enhanced thermal coupling to heatsink |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg FOM | 4.54 Ω·nC - Balances conduction and switching loss for optimal efficiency in 100–300 kHz PFC |
| Avalanche energy rating | 508 mJ single-pulse - Eliminates need for external clamping in inductive load transients |
| Fast body diode | trr = 169 ns, Qrr = 1.3–2.7 μC - Reduces diode-induced voltage spikes and EMI in CrCM boost converters |
| Low effective output capacitance | Co(er) = 139 pF - Lowers turn-off energy loss and improves hard-switching efficiency |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile |
Applications
| Server Power Supply | Solar PV Inverter |
|---|---|
Use Scenario: High-density 3 kW–5 kW front-end AC/DC rectifier with interleaved PFC stage operating at 150 kHz. IC Role / Device Role / Timing Role: Main switch in boost PFC cell handling 61 A RMS input current; body diode conducts during zero-current switching intervals. Use Value: 0.036 Ω RDS(on) and 126 nC Qg enable >98.2 % PFC efficiency at full load while maintaining thermal margin on compact heatsinks. | Use Scenario: Two-level string inverter DC/AC stage with 1000 V DC input and 60 Hz output, using SiHG039N60EF-GE3 in unidirectional buck-boost auxiliary converter. IC Role / Device Role / Timing Role: High-side switch in bidirectional DC link regulation circuit; body diode recirculates current during dead-time commutation. Use Value: 169 ns trr and 14.4 A IRRM suppress voltage overshoot during fast di/dt transitions, reducing snubber size by 40 % vs. standard MOSFETs. |
| Industrial Motor Drive | Fluorescent Ballast Lighting |
Use Scenario: 7.5 kW variable-frequency drive output stage with IGBT/MOSFET hybrid topology, where SIHG039N60EF-GE3 drives auxiliary power rails and braking circuits. IC Role / Device Role / Timing Role: Regenerative braking switch in DC bus clamp circuit; subjected to repetitive 508 mJ avalanche events during motor deceleration. Use Value: Rated UIS energy allows reliable operation without external TVS, simplifying BOM and improving long-term field reliability under overload conditions. | Use Scenario: Electronic ballast for 400 W HID lamp with resonant ignition and regulated lamp current control. IC Role / Device Role / Timing Role: Half-bridge high-side switch in resonant tank driver; body diode handles reverse recovery during zero-voltage switching transitions. Use Value: Low Co(er) (139 pF) and fast trr reduce switching losses by 22 % compared to legacy 600 V MOSFETs, enabling smaller magnetics and higher power density. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N60M2 | 600 V, 62 A, RDS(on) = 0.035 Ω, Qg = 110 nC, TO-247 long leads | Lower Qg improves switching speed but lacks avalanche rating (no EAS spec) | Preferred for high-frequency ZVS designs where avalanche stress is absent; not recommended for PFC with line surges |
| IXFH60N60X | 600 V, 60 A, RDS(on) = 0.038 Ω, Qg = 135 nC, TO-247 short leads | Higher Qg increases gate drive loss; includes ultra-fast body diode (trr = 120 ns) | Better suited for resonant LLC where diode softness dominates; less efficient than SIHG039N60EF-GE3 in hard-switched PFC |
Compared with STW62N60M2 and IXFH60N60X, SIHG039N60EF-GE3 offers the best balance of avalanche ruggedness, low RDS(on) × Qg, and body diode performance-making it optimal for telecom rectifiers and industrial PFC where reliability under transient stress is critical.
Availability
SIHG039N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.
Supply support for SIHG039N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The EF Series is designed specifically for high-efficiency, high-reliability hard-switched power conversion systems-including telecom rectifiers, industrial SMPS, and renewable energy inverters-where low RDS(on), fast body diode, and avalanche ruggedness are mandatory.
FAQ
What is the maximum continuous drain current rating for SIHG039N60EF-GE3 at 100 °C case temperature?
The SIHG039N60EF-GE3 has a continuous drain current rating of 39 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations when mounted on a heatsink with limited cooling capacity, and must be used for thermal design validation in enclosed industrial environments.
Does SIHG039N60EF-GE3 have a qualified avalanche energy rating, and what is its value?
Yes, SIHG039N60EF-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (EAS) of 508 mJ, tested under standardized conditions (VDD = 120 V, L = 28.2 mH, Rg = 25 Ω, IAS = 6.0 A). This rating confirms robustness against inductive turn-off transients without external clamping.
What is the typical reverse recovery time (trr) of the body diode in SIHG039N60EF-GE3, and under what conditions is it measured?
The typical reverse recovery time (trr) of the SIHG039N60EF-GE3 body diode is 169 ns, measured at TJ = 25 °C with IF = IS = 32 A, di/dt = 100 A/μs, and VR = 400 V. This parameter is critical for minimizing voltage overshoot in CrCM PFC and resonant lighting ballasts.
Is SIHG039N60EF-GE3 lead (Pb)-free and halogen-free, and which compliance standards does it meet?
Yes, SIHG039N60EF-GE3 is lead (Pb)-free and halogen-free per Vishay's material categorization standard, compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 1 reflow profile. Full compliance documentation is available under Vishay document #99912.
What is the gate-source threshold voltage range (VGS(th)) for SIHG039N60EF-GE3, and how does it affect drive circuit design?
The gate-source threshold voltage (VGS(th)) for SIHG039N60EF-GE3 ranges from 3.0 V to 5.0 V at VDS = VGS and ID = 250 μA. This wide range necessitates gate drive voltages ≥10 V to ensure full enhancement and consistent RDS(on) performance across temperature and unit variation.
SIHG039N60EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- EF
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 126 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4323 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 357W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
SIHG039N60EF-GE3 FAQ
1.How can I place an order for SIHG039N60EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHG039N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHG039N60EF-GE3 reliable?
The price and inventory of SIHG039N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG039N60EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHG039N60EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG039N60EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHG039N60EF-GE3?
SIHG039N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHG039N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHG039N60EF-GE3?
For technical support, including SIHG039N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG039N60EF-GE3 requirements.
6.How does Aetrix verify that SIHG039N60EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHG039N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG039N60EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHG039N60EF-GE3?
All SIHG039N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG039N60EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHG039N60EF-GE3 part is unused and in its original packaging.
Return procedure for SIHG039N60EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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