Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG039N60E-GE3

Name: SIHG039N60E-GE3
Brand: Vishay Siliconix
SKU: SIHG039N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHG039N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG039N60E-GE3.pdf

Description:: MOSFET N-CH 600V 63A TO247AC

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:500

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHG039N60E-GE3 from Vishay Siliconix is a 600 V, 63 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 0.034 Ω R_DS(on) at V_GS = 10 V, 126 nC total gate charge, and 633 mJ single-pulse avalanche energy-designed for high-efficiency switching in telecom and server power supplies.

For engineers reviewing the SIHG039N60E-GE3 datasheet, SIHG039N60E-GE3 pinout, SIHG039N60E-GE3 application, or SIHG039N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced C_oss(er) of 143 pF, and rated dv/dt capability of 70 V/ns at T_J = 125 °C for robust hard-switching operation.

Technical Context

This 4th-generation E-series MOSFET employs planar stripe cell structure with optimized gate oxide and drift region doping to achieve low conduction loss while maintaining rugged unclamped inductive switching (UIS) performance. Its body diode exhibits 663 ns typical reverse recovery time and 12.1 μC Q_rr at 25 °C, enabling moderate-frequency PFC and SMPS operation.

The device operates with gate threshold voltage between 3 V and 5 V, supports ±30 V gate drive, and delivers 17 S forward transconductance at V_DS = 20 V and I_D = 32 A-enabling stable gate control under varying load and temperature conditions across industrial and computing power systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in telecom rectifiers and PV inverters
R_DS(on) typ	0.034 Ω at V_GS = 10 V - enables <1.1 W conduction loss at 63 A continuous drain current, reducing heatsink requirements
Q_g max	126 nC - defines minimum gate driver peak current needed for <200 ns turn-on delay in 100 kHz+ switching applications
E_AS	633 mJ - ensures reliable operation during short-circuit events without external snubbers in motor drives and UPS systems
C_oss(er)	143 pF - lowers stored output capacitance energy, reducing turn-off loss and improving efficiency in ZVS/ZCS topologies
T_J range	–55 °C to +150 °C - allows deployment in sealed industrial enclosures and high-ambient telecom base stations
P_D	357 W - supports high-power density designs when mounted on ≥100 cm² copper area with thermal interface material

Pinout & Package

TO-247AC package with isolated drain tab, 3-pin configuration, and 0.35 °C/W junction-to-case thermal resistance. Lead finish is lead (Pb)-free and halogen-free per JEDEC standard.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 10 V logic-level gate drive; requires <1 Ω series resistance to damp ringing due to 0.7 Ω typical gate input resistance
2 (Drain)	High-side power terminal	Connected to heat sink via insulated mounting; carries full load current and withstands 600 V blocking voltage
3 (Source)	Reference node	Serves as return path for gate drive and sense reference; must be routed with low-inductance layout to minimize shoot-through risk

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	4.3 nC·Ω - reduces combined switching and conduction losses by >15 % vs. prior-gen 600 V MOSFETs in 50–100 kHz SMPS
Avalanche-rated (UIS)	633 mJ single-pulse - eliminates need for external clamping circuits in battery charger and welding inverter primary switches
Reduced effective output capacitance	C_oss(er) = 143 pF - cuts turn-off energy loss by ~30 % compared to standard 600 V MOSFETs with similar R_DS(on)
Body diode with controlled Q_rr	12.1 μC typical - enables soft-recovery behavior in PFC boost stages without requiring external SiC diodes
High dv/dt immunity	70 V/ns at 125 °C - prevents false turn-on in high-noise motor drive half-bridges and solar inverter H-bridges

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switch in 3 kW LLC resonant converter for AI server racks. IC Role / Device Role / Timing Role: High-voltage power switch operating at 200–500 kHz with synchronous rectification control. Use Value: Low R_DS(on) and C_oss(er) reduce conduction and capacitive turn-off losses, enabling >96 % efficiency at full load.	Use Scenario: Active clamp forward primary switch in 48 V telecom rectifier with 300 V AC input. IC Role / Device Role / Timing Role: Main switching element handling 63 A peak current and 600 V blocking duty. Use Value: Avalanche rating ensures reliability during line surges and hot-swap events without derating.
PV Inverters	Motor Drives
Use Scenario: DC-link switch in string-level 5 kW solar inverter with transformerless topology. IC Role / Device Role / Timing Role: High-side switch in H-bridge stage operating at 16–20 kHz with bipolar voltage stress. Use Value: 150 °C max junction temperature and low thermal resistance allow compact heatsink design in outdoor enclosures.	Use Scenario: Inverter leg switch in 7.5 kW industrial servo drive with regenerative braking. IC Role / Device Role / Timing Role: Fast-switching power transistor controlling three-phase motor current with 100 ns dead-time. Use Value: Controlled body diode Q_rr and low gate charge enable clean commutation and reduced EMI in noisy factory environments.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switch in 3 kW LLC resonant converter for AI server racks.

IC Role / Device Role / Timing Role: High-voltage power switch operating at 200–500 kHz with synchronous rectification control.

Use Value: Low R_DS(on) and C_oss(er) reduce conduction and capacitive turn-off losses, enabling >96 % efficiency at full load.

Use Scenario: Active clamp forward primary switch in 48 V telecom rectifier with 300 V AC input.

IC Role / Device Role / Timing Role: Main switching element handling 63 A peak current and 600 V blocking duty.

Use Value: Avalanche rating ensures reliability during line surges and hot-swap events without derating.

PV Inverters

Motor Drives

Use Scenario: DC-link switch in string-level 5 kW solar inverter with transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in H-bridge stage operating at 16–20 kHz with bipolar voltage stress.

Use Value: 150 °C max junction temperature and low thermal resistance allow compact heatsink design in outdoor enclosures.

Use Scenario: Inverter leg switch in 7.5 kW industrial servo drive with regenerative braking.

IC Role / Device Role / Timing Role: Fast-switching power transistor controlling three-phase motor current with 100 ns dead-time.

Use Value: Controlled body diode Q_rr and low gate charge enable clean commutation and reduced EMI in noisy factory environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.038 Ω, Q_g = 110 nC, C_oss(er) = 165 pF, TO-247 package	Higher conduction loss but lower gate charge; less suited for high-current PFC stages	Prefer SIHG039N60E-GE3 where R_DS(on) dominates system loss budget
IXFH50N60X	R_DS(on) = 0.045 Ω, Q_g = 145 nC, E_AS = 520 mJ, TO-247 package	Lower avalanche rating and higher gate charge limit use in high-stress inductive loads	Prefer SIHG039N60E-GE3 for welding inverters and UPS systems requiring robust UIS

Compared with STW62N60M2 and IXFH50N60X, SIHG039N60E-GE3 offers the lowest R_DS(on) × Q_g FOM and highest E_AS, making it optimal for high-efficiency, high-reliability 600 V switching where conduction loss and surge immunity are critical.

Availability

SIHG039N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and PV inverters requiring stable component supply and long-term production continuity.

Supply support for SIHG039N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The E Series Power MOSFET product line targets high-efficiency, high-reliability switching in server, telecom, and industrial power conversion-emphasizing low FOM, rugged avalanche capability, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current rating for SIHG039N60E-GE3 at 100 °C case temperature?

The SIHG039N60E-GE3 has a continuous drain current rating of 40 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 63 A rating at 25 °C, based on a linear derating factor of 2.9 W/°C and R_thJC = 0.35 °C/W. Designers must ensure heatsink design maintains case temperature ≤100 °C under full-load conditions to sustain this current.

Does SIHG039N60E-GE3 support gate drive voltages below 10 V?

Yes, SIHG039N60E-GE3 has a gate threshold voltage range of 3 V to 5 V, allowing operation with gate drive as low as 5 V. However, its R_DS(on) specification (0.034 Ω typ) is guaranteed only at V_GS = 10 V. At 5 V, R_DS(on) increases significantly-typically >0.1 Ω-so 10 V drive is recommended for minimal conduction loss in high-current applications like server PSUs.

What is the significance of the "-GE3" suffix in SIHG039N60E-GE3?

The "-GE3" suffix in SIHG039N60E-GE3 indicates a lead (Pb)-free and halogen-free version compliant with RoHS Directive 2011/65/EU and Vishay's green initiative. It denotes packaging in TO-247AC with matte tin-plated leads, no intentional lead content, and full compliance with JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30 °C/60 % RH.

How does the body diode performance of SIHG039N60E-GE3 compare to standard 600 V MOSFETs?

The SIHG039N60E-GE3 features a body diode with 663 ns typical reverse recovery time (t_rr) and 12.1 μC Q_rr at 25 °C-significantly faster and lower-charge than legacy 600 V MOSFETs. This enables cleaner commutation in PFC boost stages and reduces diode-related switching loss, though it remains slower than dedicated SiC Schottky diodes used in ultra-high-frequency designs.

Can SIHG039N60E-GE3 be used in hard-switched topologies above 100 kHz?

Yes, SIHG039N60E-GE3 is qualified for hard-switched operation up to 200 kHz in well-designed layouts, supported by its 79 ns typical turn-on delay and 126 ns rise time at V_DD = 480 V. However, switching losses increase quadratically with frequency; designers should verify thermal performance using its 0.35 °C/W R_thJC and simulate total loss (conduction + switching) at target operating point before finalizing magnetics and gate drive.

SIHG039N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 39mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 126 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 4369 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 357W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG039N60E-GE3 FAQ

1.How can I place an order for SIHG039N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG039N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG039N60E-GE3 reliable?

The price and inventory of SIHG039N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG039N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG039N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG039N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG039N60E-GE3?

SIHG039N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG039N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG039N60E-GE3?

For technical support, including SIHG039N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG039N60E-GE3 requirements.

6.How does Aetrix verify that SIHG039N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG039N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG039N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG039N60E-GE3?

All SIHG039N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG039N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG039N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHG039N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …