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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG050N60E-GE3

Name: SIHG050N60E-GE3
Brand: Vishay Siliconix
SKU: SIHG050N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG050N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG050N60E-GE3.pdf

Description:: MOSFET N-CH 600V 51A TO247AC

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Product details

Overview

SIHG050N60E-GE3 from Vishay Siliconix is a 600 V, 51 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring 0.043 Ω R_DS(on) at V_GS = 10 V and 130 nC total gate charge. It delivers low conduction and switching losses with avalanche energy rating (427 mJ), optimized for high-efficiency server power supplies, telecom SMPS, and PFC stages.

For engineers reviewing the SIHG050N60E-GE3 datasheet, SIHG050N60E-GE3 pinout, SIHG050N60E-GE3 application, or SIHG050N60E-GE3 equivalent, key selection criteria include its 600 V V_DS, 0.043 Ω R_DS(on), 130 nC Q_g, 427 mJ E_AS, and TO-247AC thermal performance (R_thJC = 0.45 °C/W) in hard-switched and resonant topologies.

Technical Context

This 4th-generation E-series MOSFET employs planar stripe cell structure to minimize figure-of-merit (R_DS(on) × Q_g) and effective output capacitance (C_oss(er) = 114 pF). Its gate threshold voltage (3.0–5.0 V) ensures robust noise immunity while enabling standard 10 V gate drive compatibility.

The device integrates an optimized body diode with 435 ns typical reverse recovery time (t_rr) and 9.2 μC Q_rr, supporting ZVS operation in LLC converters and reducing commutation losses in bridge configurations. Thermal resistance from junction-to-case is fixed at 0.45 °C/W, enabling high-power density designs up to 278 W at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V DC bus with 50 % margin for transient overvoltage in telecom/server PFC and DC-DC stages
R_DS(on) max	0.050 Ω - Ensures ≤ 26.5 W conduction loss at 23 A continuous drain current (T_J = 150 °C)
Q_g max	130 nC - Determines gate driver power requirement (~1.3 mW per MHz at 10 V swing) in 100–500 kHz SMPS
E_AS	427 mJ - Enables reliable unclamped inductive switching in hard-switched half/full-bridge circuits without snubbers
t_rr	435 ns - Reduces diode recovery-related voltage spikes and EMI in synchronous rectification and phase-shifted full-bridge
R_thJC	0.45 °C/W - Allows direct heatsink mounting for thermal management of >200 W dissipation with <100 K rise above case
I_D (T_C = 100 °C)	32 A - Specifies usable current derating for continuous operation in enclosed industrial power enclosures

Pinout & Package

SIHG050N60E-GE3 uses the TO-247AC package - a through-hole, single-ended, high-voltage power package with isolated tab (drain-connected), optimized for mechanical robustness and thermal transfer via screw-mount heatsinks. Dimensions conform to JEDEC TO-247 with facility-code-specific variants (Y/N/9), all sharing identical lead assignments and thermal pad contour options.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level gate drive; input capacitance C_iss = 3459 pF shapes Miller effect and turn-on timing
2 (Drain)	Main power terminal (high-side)	Connected to internal die backside; electrically tied to metal tab - requires isolation from heatsink unless system ground referenced
3 (Source)	Power return / reference node	Serves as local ground reference for gate drive; carries full load current and diode reverse recovery current (I_RRM = 39 A)
4 (Drain)	Secondary drain connection	Redundant drain path for enhanced current handling and reduced package inductance; must be connected to same potential as Pin 2

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	5.55 Ω·nC - Directly reduces combined conduction + switching loss, critical for >96 % efficiency in 1–3 kW PFC stages
C_oss(er) = 114 pF	Energy-equivalent output capacitance at V_DS = 480 V - lowers capacitive turn-off loss and improves ZVS range in resonant converters
Avalanche-rated (E_AS = 427 mJ)	Guaranteed single-pulse ruggedness under inductive switching fault conditions without external clamping
Body diode t_rr = 435 ns	Enables clean commutation in synchronous rectifier and active clamp topologies with minimal voltage overshoot
TO-247AC R_thJC = 0.45 °C/W	Supports >200 W continuous power dissipation with standard forced-air heatsinking and thermal interface material

Applications

Server Power Supply	Telecom SMPS
Use Scenario: Primary-side switch in 1.5–3 kW front-end AC-DC rectifiers with active PFC and LLC resonant DC-DC stage. IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling 400 V DC bus and 20–50 A peak currents at 65–150 kHz. Use Value: Low R_DS(on) minimizes conduction loss in PFC boost inductor; low Q_g enables efficient 100 kHz+ operation with standard gate drivers.	Use Scenario: Main switch in 800 W–2 kW telecom rectifiers operating from -48 V DC backup or universal AC input. IC Role / Device Role / Timing Role: Hard-switched or phase-shifted full-bridge primary switch managing 380–400 V DC link and 15–30 A RMS current. Use Value: Avalanche rating eliminates need for external RCD snubbers; robust body diode supports asymmetrical PWM control during light-load burst mode.
Industrial Motor Drive	Solar PV Inverter
Use Scenario: Inverter leg switch in 3–5 kW variable-frequency drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: IGBT replacement in 6–12 kHz PWM inverters driving three-phase induction motors with regenerative braking. Use Value: Fast t_rr and low Q_rr reduce shoot-through risk during commutation; 600 V rating accommodates 400 V DC bus with motor back-EMF margin.	Use Scenario: DC-link switch in string-level 3–5 kW solar microinverters and central inverters with transformerless topology. IC Role / Device Role / Timing Role: Unidirectional high-side switch in H5 or HERIC inverter bridges handling 600–1000 V DC input and 50 Hz–20 kHz modulation. Use Value: 600 V V_DS supports 1000 V PV string with safety margin; low C_oss(er) reduces reactive current in leakage-path filtering.

Server Power Supply

Telecom SMPS

Use Scenario: Primary-side switch in 1.5–3 kW front-end AC-DC rectifiers with active PFC and LLC resonant DC-DC stage.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling 400 V DC bus and 20–50 A peak currents at 65–150 kHz.

Use Value: Low R_DS(on) minimizes conduction loss in PFC boost inductor; low Q_g enables efficient 100 kHz+ operation with standard gate drivers.

Use Scenario: Main switch in 800 W–2 kW telecom rectifiers operating from -48 V DC backup or universal AC input.

IC Role / Device Role / Timing Role: Hard-switched or phase-shifted full-bridge primary switch managing 380–400 V DC link and 15–30 A RMS current.

Use Value: Avalanche rating eliminates need for external RCD snubbers; robust body diode supports asymmetrical PWM control during light-load burst mode.

Industrial Motor Drive

Solar PV Inverter

Use Scenario: Inverter leg switch in 3–5 kW variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: IGBT replacement in 6–12 kHz PWM inverters driving three-phase induction motors with regenerative braking.

Use Value: Fast t_rr and low Q_rr reduce shoot-through risk during commutation; 600 V rating accommodates 400 V DC bus with motor back-EMF margin.

Use Scenario: DC-link switch in string-level 3–5 kW solar microinverters and central inverters with transformerless topology.

IC Role / Device Role / Timing Role: Unidirectional high-side switch in H5 or HERIC inverter bridges handling 600–1000 V DC input and 50 Hz–20 kHz modulation.

Use Value: 600 V V_DS supports 1000 V PV string with safety margin; low C_oss(er) reduces reactive current in leakage-path filtering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW56N60M2	600 V, 56 A, R_DS(on) = 0.042 Ω, Q_g = 115 nC, TO-247 long leads	Lower Q_g but higher R_DS(on) tolerance; no specified E_AS rating	Preferred where gate drive loss dominates; verify avalanche capability with external protection if used in hard-switched PFC
IXFH50N60P	600 V, 50 A, R_DS(on) = 0.055 Ω, Q_g = 120 nC, TO-247 non-isolated tab	Higher R_DS(on) increases conduction loss by ~26 %; tab not internally isolated from drain	Acceptable for cost-sensitive industrial SMPS where thermal margin exists; requires insulated mounting hardware

Compared with SIHG050N60E-GE3, STW56N60M2 offers lower gate charge but lacks guaranteed avalanche ruggedness, while IXFH50N60P trades higher on-resistance for broader availability and legacy design support - both require layout review for thermal and isolation compliance.

Availability

SIHG050N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Vishay-authorized channels.

Supply support for SIHG050N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFET product line targets high-efficiency, high-power-density switching applications including server/telecom power, industrial motor drives, and renewable energy inverters - emphasizing low FOM, ruggedness, and thermal performance.

FAQ

What is the maximum continuous drain current for SIHG050N60E-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHG050N60E-GE3 is 32 A when the case temperature is maintained at 100 °C. This value reflects thermal derating from the 51 A rating at 25 °C and is validated under steady-state conditions with proper heatsinking. Designers must ensure junction temperature remains ≤150 °C using the specified R_thJC = 0.45 °C/W and ambient thermal environment. SIHG050N60E-GE3 data confirms this limit in the Absolute Maximum Ratings table.

Does SIHG050N60E-GE3 have a fully isolated drain tab in the TO-247AC package?

Yes, SIHG050N60E-GE3 features an electrically isolated drain tab in the TO-247AC package - the metal tab is internally connected only to the drain terminal and is insulated from the mounting surface. This allows direct mechanical attachment to a grounded heatsink without requiring insulating hardware, simplifying thermal design in high-voltage applications. The isolation is verified in Vishay's Package Information document 91360.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHG050N60E-GE3?

The typical reverse recovery charge (Q_rr) of the integrated body diode in SIHG050N60E-GE3 is 9.2 μC, measured at T_J = 25 °C with I_F = 23 A, di/dt = 100 A/μs, and V_R = 400 V. This parameter directly impacts commutation loss and EMI in bridge configurations. The datasheet specifies a maximum Q_rr of 18.4 μC, and SIHG050N60E-GE3's low value supports efficient operation in ZVS and synchronous rectifier topologies.

Can SIHG050N60E-GE3 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, SIHG050N60E-GE3 is fully rated for repetitive unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy (E_AS) of 427 mJ. This rating is tested per JEDEC standard JESD24-1 with V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5.5 A. SIHG050N60E-GE3's ruggedness enables reliable operation in hard-switched topologies without external snubbers, provided pulse width remains within junction temperature limits.

What is the gate threshold voltage range for SIHG050N60E-GE3, and how does it affect drive requirements?

The gate threshold voltage (V_GS(th)) for SIHG050N60E-GE3 ranges from 3.0 V to 5.0 V at I_D = 250 μA, ensuring reliable turn-on with standard 10 V gate drivers while providing noise immunity against spurious turn-on. This range avoids the risk of partial enhancement seen in logic-level devices and aligns with industry-standard PWM controller outputs. SIHG050N60E-GE3 requires ≥10 V V_GS to achieve its specified R_DS(on) of 0.043 Ω, confirmed in the Static Characteristics table.

SIHG050N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 51A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 23A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3459 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG050N60E-GE3 FAQ

1.How can I place an order for SIHG050N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG050N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG050N60E-GE3 reliable?

The price and inventory of SIHG050N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG050N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG050N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG050N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG050N60E-GE3?

SIHG050N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG050N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG050N60E-GE3?

For technical support, including SIHG050N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG050N60E-GE3 requirements.

6.How does Aetrix verify that SIHG050N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG050N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG050N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG050N60E-GE3?

All SIHG050N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG050N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG050N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHG050N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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