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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG065N60E-GE3

Name: SIHG065N60E-GE3
Brand: Vishay Siliconix
SKU: SIHG065N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG065N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG065N60E-GE3.pdf

Description:: MOSFET N-CH 600V 40A TO247AC

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Product details

Overview

SIHG065N60E-GE3 from Vishay Siliconix is a 600 V, 40 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 0.057 Ω R_DS(on) at V_GS = 10 V, 74 nC total gate charge, and 226 mJ single-pulse avalanche energy - optimized for high-efficiency server and telecom SMPS primary-side switching.

For engineers reviewing the SIHG065N60E-GE3 datasheet, SIHG065N60E-GE3 pinout, SIHG065N60E-GE3 application, or SIHG065N60E-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance (R_thJC = 0.5 °C/W), body diode recovery characteristics (t_rr = 382 ns), and real-world use context in PFC and PV inverter stages.

Technical Context

This E-series MOSFET employs 4th-generation silicon technology to minimize conduction and switching losses via low figure-of-merit (R_DS(on) × Q_g = 4.2 nΩ·F) and reduced effective output capacitance (C_o(er) = 93 pF). Its 600 V V_DS rating supports universal input AC/DC front-end designs with margin.

The device integrates an avalanche-rated body diode with 1.2 V forward voltage at 16 A and 34 A peak reverse recovery current, enabling robust operation in hard-switched topologies. Gate threshold voltage (3–5 V) ensures compatibility with standard 10 V gate drivers while maintaining noise immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus with 50 % safety margin in 3-phase rectified or PFC outputs
R_DS(on) max	0.065 Ω at T_J = 150 °C - limits conduction loss to ≤ 10.4 W at 40 A continuous drain current
Q_g max	74 nC - determines gate drive power requirement (~1.5 mW per MHz at 10 V swing)
E_AS	226 mJ - enables reliable unclamped inductive switching in flyback or LLC resonant converters
R_thJC	0.5 °C/W - allows 250 W dissipation with ≤ 125 °C junction rise above 25 °C case temperature
t_rr	382 ns typical - constrains diode recovery-related voltage overshoot and EMI in bridge-leg configurations
I_D continuous	40 A at T_C = 25 °C - defines maximum steady-state current before thermal derating begins

Pinout & Package

TO-247AC package with isolated drain tab, 3-pin configuration, and industry-standard lead spacing (e = 5.46 mm). Thermal pad on drain side enables direct heatsink mounting with low thermal resistance path.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level signal; requires ≥ 0.7 Ω gate resistor to limit dV/dt-induced turn-on during fast switching
2 (Drain)	Main current sink	Connected to high-voltage DC bus or transformer primary; electrically tied to metal tab for thermal conduction
3 (Source)	Reference node	Serves as return path for load current and gate driver reference; must be low-inductance layout to suppress ringing
4 (Drain)	Secondary drain connection	Redundant drain terminal for parallel current handling and improved thermal spreading; same potential as Pin 2

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	4.2 nΩ·F - reduces combined conduction + switching loss by >15 % vs. prior-gen 600 V MOSFETs in 100 kHz PFC
Avalanche-rated (UIS)	226 mJ single-pulse - eliminates need for external snubbers in inductive load switching applications
Reduced C_o(er)	93 pF - lowers turn-off energy loss and improves ZVS initiation in resonant converters
Body diode t_rr	382 ns - enables stable operation in synchronous rectification without cross-conduction risk
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile for TO-247AC

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switch in 3 kW 48 V output telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch operating at 200 kHz with 50 % duty cycle and 400 V DC input. Use Value: 0.057 Ω R_DS(on) minimizes conduction loss under full load; 226 mJ E_AS withstands clamp circuit transients without failure.	Use Scenario: Boost switch in universal-input (90–264 V AC) PFC stage feeding downstream DC/DC converters. IC Role / Device Role / Timing Role: Fast-switching boost transistor with critical conduction mode (CrM) control. Use Value: Low Q_gd/Q_g ratio (15/74 = 0.20) improves controllability during zero-current switching transitions.
PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switch in string-level 5 kW solar inverter with two-level NPC topology. IC Role / Device Role / Timing Role: High-voltage leg switch handling 1000 V DC bus with bidirectional current capability. Use Value: 600 V V_DS rating provides margin against DC bus overvoltage during grid faults; 1.2 V V_SD reduces body diode conduction loss during shoot-through protection.	Use Scenario: Inverter leg switch in 7.5 kW HVAC variable-frequency drive with IGBT-like gate drive simplicity. IC Role / Device Role / Timing Role: Main power switch in three-phase bridge delivering 30 A RMS motor current. Use Value: R_thJC = 0.5 °C/W enables direct heatsink mounting without thermal interface material degradation over 10-year life.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switch in 3 kW 48 V output telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch operating at 200 kHz with 50 % duty cycle and 400 V DC input.

Use Value: 0.057 Ω R_DS(on) minimizes conduction loss under full load; 226 mJ E_AS withstands clamp circuit transients without failure.

Use Scenario: Boost switch in universal-input (90–264 V AC) PFC stage feeding downstream DC/DC converters.

IC Role / Device Role / Timing Role: Fast-switching boost transistor with critical conduction mode (CrM) control.

Use Value: Low Q_gd/Q_g ratio (15/74 = 0.20) improves controllability during zero-current switching transitions.

PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switch in string-level 5 kW solar inverter with two-level NPC topology.

IC Role / Device Role / Timing Role: High-voltage leg switch handling 1000 V DC bus with bidirectional current capability.

Use Value: 600 V V_DS rating provides margin against DC bus overvoltage during grid faults; 1.2 V V_SD reduces body diode conduction loss during shoot-through protection.

Use Scenario: Inverter leg switch in 7.5 kW HVAC variable-frequency drive with IGBT-like gate drive simplicity.

IC Role / Device Role / Timing Role: Main power switch in three-phase bridge delivering 30 A RMS motor current.

Use Value: R_thJC = 0.5 °C/W enables direct heatsink mounting without thermal interface material degradation over 10-year life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.055 Ω, Q_g = 85 nC, TO-247 long leads; higher gate charge increases driver loss	Optimized for lower-frequency (<100 kHz) industrial inverters where switching loss is secondary to conduction loss	Prefer SIHG065N60E-GE3 for >150 kHz PFC or resonant topologies requiring faster switching
IXFH60N60X	R_DS(on) = 0.062 Ω, Q_g = 62 nC, TO-247 non-isolated drain; lower Q_g but no avalanche rating	Suitable for soft-switched ZVS/ZCS circuits where UIS capability is not required	Select SIHG065N60E-GE3 when unclamped inductive stress or field reliability under overload is mandatory

Compared with STW62N60M2 and IXFH60N60X, SIHG065N60E-GE3 delivers superior balance of low R_DS(on), moderate Q_g, and guaranteed avalanche ruggedness - making it the preferred choice for mission-critical telecom and server power where transient robustness cannot be compromised.

Availability

SIHG065N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and photovoltaic inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHG065N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial and computing applications.

The E Series power MOSFET product line targets high-efficiency AC/DC conversion systems, emphasizing low FOM, avalanche ruggedness, and thermally robust packaging for uninterrupted operation in datacenter and telecom infrastructure.

FAQ

What is the maximum continuous drain current rating for SIHG065N60E-GE3 at 100 °C case temperature?

The SIHG065N60E-GE3 supports 25 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-247AC package and ensures safe operation within the 150 °C maximum junction temperature limit. Engineers must verify heatsink design to maintain T_C ≤ 100 °C under full-load conditions to sustain this current level in the SIHG065N60E-GE3.

Does SIHG065N60E-GE3 have avalanche energy rating, and what is its value?

Yes, the SIHG065N60E-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 226 mJ, tested under standardized conditions (V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 4 A). This rating is guaranteed per unit and enables reliable operation in circuits subject to inductive transients without external snubbers - a key differentiator of the SIHG065N60E-GE3 versus non-avalanche-rated alternatives.

What is the gate-source threshold voltage range for SIHG065N60E-GE3, and how does it affect drive requirements?

The SIHG065N60E-GE3 has a gate-source threshold voltage (V_GS(th)) range of 3 V to 5 V at T_J = 25 °C, measured with V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise immunity against spurious gate excitation. The SIHG065N60E-GE3 achieves full enhancement and minimal R_DS(on) only when driven to ≥ 10 V, as confirmed by the R_DS(on) spec of 0.057 Ω at V_GS = 10 V.

How does the body diode performance of SIHG065N60E-GE3 compare to standard power MOSFETs?

The SIHG065N60E-GE3 features an optimized body diode with 1.2 V forward voltage (V_SD) at I_S = 16 A and T_J = 25 °C, plus 382 ns typical reverse recovery time (t_rr) under defined test conditions (I_F = 16 A, di/dt = 100 A/μs, V_R = 400 V). These values represent significant improvement over legacy 600 V MOSFETs and reduce commutation losses in half-bridge and synchronous rectifier applications - a documented characteristic of the SIHG065N60E-GE3 E-series platform.

Is SIHG065N60E-GE3 compatible with lead-free reflow soldering processes?

Yes, the SIHG065N60E-GE3 is qualified for lead-free reflow soldering with a peak temperature of 260 °C for 10 seconds, per JEDEC J-STD-020. Its TO-247AC package uses matte tin-plated leads and complies with RoHS Directive 2011/65/EU and Vishay's halogen-free policy. This ensures compatibility with modern SMT assembly lines without compromising wire bond integrity or package mechanical stability - a verified process qualification for the SIHG065N60E-GE3.

SIHG065N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 74 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2700 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG065N60E-GE3 FAQ

1.How can I place an order for SIHG065N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG065N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG065N60E-GE3 reliable?

The price and inventory of SIHG065N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG065N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG065N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG065N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG065N60E-GE3?

SIHG065N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG065N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG065N60E-GE3?

For technical support, including SIHG065N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG065N60E-GE3 requirements.

6.How does Aetrix verify that SIHG065N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG065N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG065N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG065N60E-GE3?

All SIHG065N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG065N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG065N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHG065N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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