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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG068N60EF-GE3

Name: SIHG068N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHG068N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG068N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG068N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 41A TO247AC

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Product details

Overview

SIHG068N60EF-GE3 from Vishay Siliconix is a 600 V, 41 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 0.059 Ω R_DS(on) at V_GS = 10 V, 77 nC total gate charge, and fast body diode with 120 ns reverse recovery time. It is engineered for high-efficiency hard-switched and resonant topologies in server/telecom SMPS and PFC stages.

For engineers reviewing the SIHG068N60EF-GE3 datasheet, SIHG068N60EF-GE3 pinout, SIHG068N60EF-GE3 application, or SIHG068N60EF-GE3 equivalent, key selection criteria include avalanche-rated ruggedness (226 mJ E_AS), low Co(er) of 87 pF for reduced switching loss, and 100 V/ns dV/dt immunity in high-noise industrial environments.

Technical Context

This EF-series MOSFET employs Vishay's 4th-generation E-series silicon technology optimized for high-voltage power conversion. Its low figure-of-merit (R_DS(on) × Q_g) enables superior conduction and switching efficiency balance, while the integrated fast-recovery body diode supports ZVS/ZCS operation in LLC and phase-shifted full-bridge designs.

The device features a thermally enhanced TO-247AC package with 0.5 °C/W junction-to-case thermal resistance and is rated for continuous operation up to T_J = 150 °C. Its 600 V V_DS rating and ±30 V V_GS range support robust gate drive design across wide input voltage ranges in offline converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports 400 V AC rectified inputs with 50 % safety margin in telecom/server PSUs
R_DS(on) typ	0.059 Ω @ 10 V - Enables <1.5 W conduction loss at 16 A DC current in PFC boost stage
Q_g max	77 nC - Determines gate driver peak current requirement (~3 A for 25 ns rise time)
E_AS	226 mJ - Withstands unclamped inductive switching stress without failure in hard-switched flyback or forward converters
trr / Q_rr	120 ns / 0.8 μC - Reduces diode recovery loss and EMI in synchronous rectification and bidirectional topologies
R_thJC	0.5 °C/W - Allows >200 W power dissipation with moderate heatsinking (e.g., 100 cm² 2 mm thick Al)
dV/dt immunity	100 V/ns - Ensures reliable operation under fast transient conditions in motor drives and solar inverters

Pinout & Package

SIHG068N60EF-GE3 is housed in a standard TO-247AC package with isolated drain tab, optimized for high-voltage isolation and thermal performance. The plastic body conforms to JEDEC TO-247 outline with optional thermal pad contour (D1/E1), and lead finish is Pb-free/halogen-free per RoHS.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 10 V logic-level gate drive; requires <1 Ω series resistance to damp ringing due to 0.7 Ω gate input resistance
2 (Drain)	High-side power terminal	Connected to switch node; electrically tied to metal tab-requires ≥2 mm creepage/clearance on PCB
3 (Source)	Reference return path	Serves as local ground reference for gate driver; must be low-inductance connection to minimize V_GS noise
4 (Drain)	Secondary drain connection	Redundant drain terminal for improved current sharing and thermal spreading; paralleled internally with Pin 2

Key Features

Feature	Design Value
Fast body diode	120 ns trr and 14 A I_RRM enable efficient freewheeling in half-bridge motor drives without external Schottky
Low Co(er)	87 pF effective output capacitance reduces turn-off energy loss by ~30 % vs. legacy 600 V MOSFETs
Avalanche rated	226 mJ single-pulse UIS rating allows safe operation during overload or short-circuit events in UPS and battery chargers
4th-gen E-series FOM	R_DS(on) × Q_g = 4.54 Ω·nC - Delivers best-in-class efficiency tradeoff for 600 V class in 1–3 kW SMPS
High dV/dt immunity	100 V/ns rated slope prevents false turn-on in high dv/dt nodes (e.g., LLC resonant tank, PFC boost switch node)

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 3.3 kW front-end AC/DC converter with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, switching at 100–200 kHz with zero-voltage switching assist. Use Value: Low Q_gd/Q_g ratio (16/77 nC) ensures sharp Miller plateau transition, enabling precise ZVS timing control and <0.5 % efficiency gain over prior gen.	Use Scenario: Boost PFC stage in 2 kW telecom rectifier operating from 85–264 V AC input. IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) PFC switch with 65 kHz fixed frequency and adaptive dead-time control. Use Value: 0.059 Ω R_DS(on) limits conduction loss to <1.2 W at full load, supporting >96 % system efficiency at 230 V AC input.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in string inverter H-bridge stage interfacing 600–1000 V PV array. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 10–20 kHz inverter leg with unclamped inductive load. Use Value: 226 mJ E_AS rating eliminates need for snubbers in 3-phase inverter short-circuit protection, reducing BOM count by 3 components per leg.	Use Scenario: Inverter output stage in 7.5 kW servo drive with regenerative braking capability. IC Role / Device Role / Timing Role: Bidirectional switch in active front-end (AFE) rectifier/inverter, conducting reverse current via body diode during regeneration. Use Value: 120 ns trr and low Q_rr minimize diode recovery loss during 4 kHz PWM commutation, cutting thermal rise by 8 °C vs. standard MOSFETs.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW front-end AC/DC converter with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, switching at 100–200 kHz with zero-voltage switching assist.

Use Value: Low Q_gd/Q_g ratio (16/77 nC) ensures sharp Miller plateau transition, enabling precise ZVS timing control and <0.5 % efficiency gain over prior gen.

Use Scenario: Boost PFC stage in 2 kW telecom rectifier operating from 85–264 V AC input.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) PFC switch with 65 kHz fixed frequency and adaptive dead-time control.

Use Value: 0.059 Ω R_DS(on) limits conduction loss to <1.2 W at full load, supporting >96 % system efficiency at 230 V AC input.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in string inverter H-bridge stage interfacing 600–1000 V PV array.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 10–20 kHz inverter leg with unclamped inductive load.

Use Value: 226 mJ E_AS rating eliminates need for snubbers in 3-phase inverter short-circuit protection, reducing BOM count by 3 components per leg.

Use Scenario: Inverter output stage in 7.5 kW servo drive with regenerative braking capability.

IC Role / Device Role / Timing Role: Bidirectional switch in active front-end (AFE) rectifier/inverter, conducting reverse current via body diode during regeneration.

Use Value: 120 ns trr and low Q_rr minimize diode recovery loss during 4 kHz PWM commutation, cutting thermal rise by 8 °C vs. standard MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	600 V, 62 A, R_DS(on) = 0.055 Ω, Q_g = 92 nC, TO-247 long leads	Higher current rating but larger Q_g increases gate drive loss; no specified E_AS rating	Prefer when higher ID and lower R_DS(on) outweigh gate drive complexity and ruggedness needs
IXFH60N60X	600 V, 60 A, R_DS(on) = 0.052 Ω, Q_g = 105 nC, TO-247 non-isolated tab	Lower R_DS(on) but significantly higher Q_g; no fast body diode spec; tab not isolated	Select only if thermal margin is critical and gate drive capability supports 105 nC; verify isolation requirements

Compared with STW62N60M2 and IXFH60N60X, SIHG068N60EF-GE3 offers optimal balance of low Q_g, certified avalanche ruggedness, and fast body diode-making it preferred for space-constrained, reliability-critical telecom and server power where gate drive simplicity and fault tolerance are prioritized over marginal R_DS(on) reduction.

Availability

SIHG068N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIHG068N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The EF Series is Vishay's high-voltage power MOSFET family designed specifically for efficiency-critical, high-reliability offline power conversion in datacenter, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SIHG068N60EF-GE3 at 100 °C case temperature?

The SIHG068N60EF-GE3 has a continuous drain current rating of 26 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and ensures safe operation within the 150 °C maximum junction temperature limit. At 25 °C case temperature, the rating increases to 41 A.

Does SIHG068N60EF-GE3 have a fully characterized fast body diode, and what are its key parameters?

Yes, SIHG068N60EF-GE3 includes a fully characterized fast body diode with trr = 120 ns (typ), Q_rr = 0.8 μC (typ), and V_SD = 1.2 V (typ) at 16 A and 25 °C. These values are measured under standardized conditions (IF = IS = 16 A, di/dt = 100 A/μs, VR = 400 V) and support reliable use in bidirectional and freewheeling applications without external diodes.

What is the gate threshold voltage range for SIHG068N60EF-GE3, and how does it affect drive circuit design?

The gate-source threshold voltage V_GS(th) for SIHG068N60EF-GE3 is specified from 3 V to 5 V at I_D = 250 μA. This range confirms compatibility with standard 10 V gate drivers while ensuring sufficient noise margin against spurious turn-on. Designers should maintain V_GS ≥ 8 V for full enhancement and avoid operating near the lower threshold edge in noisy environments.

Is SIHG068N60EF-GE3 suitable for avalanche operation, and what is its rated single-pulse energy?

Yes, SIHG068N60EF-GE3 is avalanche energy rated with a guaranteed single-pulse unclamped inductive switching (UIS) energy of 226 mJ under defined test conditions (V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 4 A). This rating validates its use in circuits subject to inductive transients, such as motor drives and flyback converters, without external clamping.

What thermal resistance values are specified for SIHG068N60EF-GE3, and how do they impact heatsink selection?

SIHG068N60EF-GE3 specifies R_thJC = 0.5 °C/W (junction-to-case) and R_thJA = 40 °C/W (junction-to-ambient, no heatsink). For a 250 W maximum power dissipation at T_J = 150 °C and T_C = 80 °C, the required heatsink thermal resistance must be ≤ 2.3 °C/W (calculated as (150 − 80)/250 − 0.5), guiding mechanical thermal design for high-power applications.

SIHG068N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 41A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 68mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 77 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2628 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG068N60EF-GE3 FAQ

1.How can I place an order for SIHG068N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG068N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG068N60EF-GE3 reliable?

The price and inventory of SIHG068N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG068N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG068N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG068N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG068N60EF-GE3?

SIHG068N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG068N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG068N60EF-GE3?

For technical support, including SIHG068N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG068N60EF-GE3 requirements.

6.How does Aetrix verify that SIHG068N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG068N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG068N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG068N60EF-GE3?

All SIHG068N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG068N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG068N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHG068N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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