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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG080N60E-GE3

Name: SIHG080N60E-GE3
Brand: Vishay Siliconix
SKU: SIHG080N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG080N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG080N60E-GE3.pdf

Description:: E SERIES POWER MOSFET TO-247AC,

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHG080N60E-GE3 from Vishay Siliconix is a 600 V, 35 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.070 Ω at V_GS = 10 V, Q_g = 42 nC (typ), and avalanche-rated (E_AS = 226 mJ). It delivers low conduction and switching losses for high-efficiency hard-switched PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHG080N60E-GE3 datasheet, SIHG080N60E-GE3 pinout, SIHG080N60E-GE3 application, or SIHG080N60E-GE3 equivalent, key selection criteria include its 600 V V_DS rating, 0.070 Ω R_DS(on), Co(er) = 79 pF, UIS capability, and TO-247AC thermal performance (R_thJC = 0.55 °C/W).

Technical Context

This 4th-generation E-series MOSFET employs optimized trench-gate silicon technology to minimize R_DS(on) × Q_g figure-of-merit (FOM) and effective output capacitance (Co(er) = 79 pF). Its gate threshold voltage (V_GS(th) = 3.0–5.0 V) ensures robust noise immunity in high-noise power-conversion environments.

The device integrates a fast-recovery body diode (t_rr = 441 ns typ, Q_rr = 5.2 μC) and supports unclamped inductive switching with rated single-pulse avalanche energy (E_AS = 226 mJ). Thermal design is enabled by low junction-to-case resistance (R_thJC = 0.55 °C/W) and TO-247AC package compatibility with standard heatsink mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in 380–400 V PFC outputs with margin.
R_DS(on) (typ)	0.070 Ω at V_GS = 10 V, I_D = 17 A - Enables <1.5 W conduction loss at 17 A continuous current.
Q_g (typ)	42 nC - Reduces gate drive power and enables efficient operation at 100–300 kHz switching frequencies.
E_AS	226 mJ - Rated for repetitive unclamped inductive switching stress without failure.
Co(er)	79 pF - Low energy-related output capacitance minimizes turn-off loss in hard-switched topologies.
t_rr	441 ns (typ) - Fast body diode recovery reduces cross-conduction loss in bridge-leg configurations.
R_thJC	0.55 °C/W - Supports >200 W power dissipation with moderate heatsinking (e.g., 1°C/W sink + interface).

Pinout & Package

TO-247AC package with isolated drain tab, 3-pin through-hole configuration, and industry-standard mechanical footprint (JEDEC TO-247 variation AC). Thermal pad on drain allows direct heatsink mounting with low thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	High-impedance MOS gate requiring <42 nC charge for full enhancement; connects to gate driver IC output.
2 (Drain)	High-side power terminal	Electrically connected to metal tab; must be thermally coupled to heatsink and electrically isolated from chassis ground.
3 (Source)	Power return / reference node	Serves as local ground reference for gate drive; carries full load current and must be routed with low inductance.
4 (Drain)	Secondary drain connection	Redundant drain terminal for enhanced current handling and reduced package inductance; tied internally to Pin 2.

Key Features

Feature	Design Value
4th-generation E-series trench MOSFET	Optimized cell layout achieves 0.070 Ω R_DS(on) with 42 nC Q_g, reducing FOM by >25% vs. prior gen.
Avalanche energy rating (UIS)	226 mJ single-pulse rating enables reliable operation under transient overloads without derating.
Low Co(er)	79 pF effective output capacitance cuts turn-off switching loss by ~30% vs. comparable 600 V MOSFETs.
Fast body diode	441 ns reverse recovery time and 5.2 μC Q_rr reduce shoot-through risk in synchronous rectification and LLC resonant converters.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 3.3 kW active clamp forward or phase-shifted full-bridge converter. IC Role / Device Role / Timing Role: High-voltage, high-current main switching element operating at 100–200 kHz with zero-voltage switching assist. Use Value: 0.070 Ω R_DS(on) and 42 nC Q_g enable >96% efficiency at full load while maintaining thermal margin at 70°C ambient.	Use Scenario: Boost PFC stage in 2 kW distributed power architecture (DPA) rectifier for 48 V DC distribution. IC Role / Device Role / Timing Role: Continuous-conduction-mode (CCM) PFC switch handling 35 A peak input current at 65 kHz. Use Value: Avalanche rating (226 mJ) tolerates line surges and inductor saturation events without failure during field deployment.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching device in 5 kW string inverter H-bridge output stage. IC Role / Device Role / Timing Role: Hard-switched 600 V switch managing bidirectional energy flow with body diode commutation. Use Value: 441 ns t_rr and low Q_rr (5.2 μC) suppress voltage spikes during freewheeling, reducing snubber losses and EMI.	Use Scenario: Inverter leg switch in 7.5 kW HVAC variable-frequency drive feeding 3-phase induction motor. IC Role / Device Role / Timing Role: Main power switch in 2-level IGBT replacement topology operating at 8 kHz with 600 V DC bus. Use Value: TO-247AC package and 0.55 °C/W R_thJC support sustained 22 A continuous current at T_C = 100°C without forced air.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW active clamp forward or phase-shifted full-bridge converter.

IC Role / Device Role / Timing Role: High-voltage, high-current main switching element operating at 100–200 kHz with zero-voltage switching assist.

Use Value: 0.070 Ω R_DS(on) and 42 nC Q_g enable >96% efficiency at full load while maintaining thermal margin at 70°C ambient.

Use Scenario: Boost PFC stage in 2 kW distributed power architecture (DPA) rectifier for 48 V DC distribution.

IC Role / Device Role / Timing Role: Continuous-conduction-mode (CCM) PFC switch handling 35 A peak input current at 65 kHz.

Use Value: Avalanche rating (226 mJ) tolerates line surges and inductor saturation events without failure during field deployment.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching device in 5 kW string inverter H-bridge output stage.

IC Role / Device Role / Timing Role: Hard-switched 600 V switch managing bidirectional energy flow with body diode commutation.

Use Value: 441 ns t_rr and low Q_rr (5.2 μC) suppress voltage spikes during freewheeling, reducing snubber losses and EMI.

Use Scenario: Inverter leg switch in 7.5 kW HVAC variable-frequency drive feeding 3-phase induction motor.

IC Role / Device Role / Timing Role: Main power switch in 2-level IGBT replacement topology operating at 8 kHz with 600 V DC bus.

Use Value: TO-247AC package and 0.55 °C/W R_thJC support sustained 22 A continuous current at T_C = 100°C without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.065 Ω (lower), Q_g = 65 nC (higher), TO-247 long leads, no Co(er) spec	Higher gate charge increases driver loss; better conduction but less optimal for >200 kHz designs	Prefer when lowest R_DS(on) dominates over switching loss; verify gate driver capability for 65 nC.
IXFH50N60P	R_DS(on) = 0.090 Ω (higher), Q_g = 38 nC (lower), TO-247 short leads, E_AS = 190 mJ	Lower Q_g eases gate drive but higher R_DS(on) raises conduction loss above 15 A	Prefer for lower-frequency (<100 kHz), high-current applications where thermal margin is constrained.

Compared with STW62N60M2 and IXFH50N60P, SIHG080N60E-GE3 offers the best balance of low R_DS(on), moderate Q_g, and strong avalanche ruggedness-making it optimal for 100–300 kHz telecom/server PFC and soft-switched inverters where both conduction and switching losses matter.

Availability

SIHG080N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHG080N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIHG080N60E-GE3 belongs to Vishay's E Series Power MOSFET product line, engineered specifically for high-efficiency, high-reliability hard-switched and resonant power conversion in enterprise and industrial infrastructure.

FAQ

What is the maximum continuous drain current for SIHG080N60E-GE3 at 100°C case temperature?

The SIHG080N60E-GE3 supports 22 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper heatsinking to maintain T_J ≤ 150°C and accounts for linear derating from the 35 A rating at 25°C using the 1.8 W/°C factor.

Does SIHG080N60E-GE3 have a fully rated avalanche capability?

Yes, SIHG080N60E-GE3 is fully rated for unclamped inductive switching with E_AS = 226 mJ (single-pulse, test condition: V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 4.0 A). This is a guaranteed parameter-not a typical value-and applies across the full operating temperature range.

What is the gate threshold voltage range for SIHG080N60E-GE3?

The SIHG080N60E-GE3 has a gate-source threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V at T_J = 25°C and I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while providing noise margin against spurious turn-on in high-dv/dt environments.

Can SIHG080N60E-GE3 be used in place of older Vishay 600 V MOSFETs like SIHF080N60E?

SIHG080N60E-GE3 replaces SIHF080N60E with identical pinout, voltage rating, and R_DS(on), but features improved Q_g (42 nC vs. 52 nC typ), lower Co(er) (79 pF vs. 105 pF), and tighter V_GS(th) distribution. No PCB changes are required, and it provides measurable efficiency gain in high-frequency PFC stages.

What is the reverse recovery charge (Q_rr) of the integrated body diode in SIHG080N60E-GE3?

The SIHG080N60E-GE3 body diode has Q_rr = 5.2 μC (typ) and 10.4 μC (max) at T_J = 25°C, I_F = 17 A, di/dt = 80 A/μs, and V_R = 25 V. This low Q_rr contributes to reduced switching loss and voltage overshoot during commutation in bridge topologies.

SIHG080N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2557 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG080N60E-GE3 FAQ

1.How can I place an order for SIHG080N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG080N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG080N60E-GE3 reliable?

The price and inventory of SIHG080N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG080N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG080N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG080N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG080N60E-GE3?

SIHG080N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG080N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG080N60E-GE3?

For technical support, including SIHG080N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG080N60E-GE3 requirements.

6.How does Aetrix verify that SIHG080N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG080N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG080N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG080N60E-GE3?

All SIHG080N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG080N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG080N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHG080N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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