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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG085N60EF-GE3

Name: SIHG085N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHG085N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG085N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG085N60EF-GE3.pdf

Description:: EF SERIES POWER MOSFET WITH FAST

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Product details

Overview

SIHG085N60EF-GE3 from Vishay Siliconix is a 600 V, 34 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 0.073 Ω R_DS(on) at V_GS = 10 V, 63 nC total gate charge, and fast body diode with 109 ns reverse recovery time. It delivers low conduction and switching losses for high-efficiency hard-switched and resonant topologies in server PSUs and PFC stages.

For engineers reviewing the SIHG085N60EF-GE3 datasheet, SIHG085N60EF-GE3 pinout, SIHG085N60EF-GE3 application, or SIHG085N60EF-GE3 equivalent, key selection criteria include its 173 mJ single-pulse avalanche energy rating, 0.55 °C/W junction-to-case thermal resistance, and EF-series optimized Co(er) of 107 pF for reduced switching loss in high-frequency SMPS designs.

Technical Context

This MOSFET employs Vishay's 4th-generation E-series technology with optimized charge distribution to achieve low figure-of-merit (R_DS(on) × Q_g = 4.6 nΩ·F). Its fast intrinsic body diode supports ZVS/ZCS operation in LLC and phase-shifted full-bridge converters.

The device integrates an avalanche-rated structure validated per UIS testing (EAS = 173 mJ), and features tightly controlled V_GS(th) (3.0–5.0 V) and low C_oss(tr) (645 pF) to ensure stable dv/dt immunity up to 100 V/ns at T_J = 125 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports 400 V DC bus with 50 % margin for transient overvoltage in telecom and industrial PFC.
R_DS(on) typ	0.073 Ω @ 10 V - Enables <1.2 W conduction loss at 17 A continuous drain current in TO-247AC package.
Q_g max	63 nC - Determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers at ≤500 kHz.
EAS	173 mJ - Withstands unclamped inductive switching stress without failure, critical for PFC boost choke protection.
Co(er)	107 pF - Energy-related output capacitance directly impacts turn-off loss; 30 % lower than legacy 600 V MOSFETs.
trr	109 ns typ - Fast body diode recovery reduces cross-conduction loss and EMI in synchronous rectification and half-bridge configurations.
R_thJC	0.55 °C/W - Enables 184 W power dissipation with ≤100 °C case temperature rise, supporting high-power density layouts.

Pinout & Package

TO-247AC package with isolated drain tab (pins 2 and 4 both connected to drain), standard 3-lead configuration, and 0.55 °C/W junction-to-case thermal resistance. Thermal pad contour optional per JEDEC TO-247 variation AC.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	High-impedance input requiring 10 V for full enhancement; gate charge Q_g = 42–63 nC defines driver sizing.
2 (Drain)	Power output node	Connected to high-voltage DC bus; electrically tied to metal tab for low-inductance heat sinking and EMI reduction.
3 (Source)	Reference node / return path	Common source for gate drive loop; low-inductance layout essential to minimize ringing during fast switching.
4 (Drain)	Power output node	Second drain connection for enhanced current sharing and thermal spreading; must be soldered to PCB copper pour or heatsink.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	4.6 nΩ·F - Reduces combined conduction + switching loss by >20 % vs. prior-gen 600 V MOSFETs at 100 kHz.
Avalanche-rated (UIS)	173 mJ - Eliminates need for external snubbers in inductive load switching, improving system reliability.
Fast body diode (trr)	109 ns typ - Enables zero-voltage switching in resonant topologies and reduces dead-time loss in bridge circuits.
Low Co(er)	107 pF - Minimizes stored energy loss during turn-off, critical for efficiency in high-frequency (>200 kHz) PFC stages.
Lead (Pb)-free & halogen-free	RoHS-compliant construction - Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life.

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switch in 3.3 kW front-end AC/DC converter with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus and 34 A peak current at 100–200 kHz. Use Value: Low R_DS(on) and fast trr reduce conduction loss and diode recovery loss, enabling >96 % efficiency at full load.	Use Scenario: Boost switch in 48 V distributed power architecture (DPA) rectifier with digital control. IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) PFC stage operating at 120 kHz. Use Value: 63 nC Q_g allows use of low-cost gate drivers while maintaining low switching loss due to low Co(er).
Solar Inverters	Industrial Motor Drives
Use Scenario: DC-link switch in string-level PV inverter with two-stage conversion (boost + H-bridge). IC Role / Device Role / Timing Role: High-side switch in interleaved boost stage handling 1000 V DC link transients. Use Value: 173 mJ EAS rating ensures robustness against lightning-induced surges and inductor flyback energy.	Use Scenario: Inverter leg switch in 7.5 kW variable frequency drive (VFD) for HVAC compressors. IC Role / Device Role / Timing Role: IGBT replacement in 6–16 kHz PWM inverter output stage with active gate driving. Use Value: Fast body diode eliminates need for external anti-parallel SiC Schottky diodes, reducing BOM count and layout area.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switch in 3.3 kW front-end AC/DC converter with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus and 34 A peak current at 100–200 kHz.

Use Value: Low R_DS(on) and fast trr reduce conduction loss and diode recovery loss, enabling >96 % efficiency at full load.

Use Scenario: Boost switch in 48 V distributed power architecture (DPA) rectifier with digital control.

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) PFC stage operating at 120 kHz.

Use Value: 63 nC Q_g allows use of low-cost gate drivers while maintaining low switching loss due to low Co(er).

Solar Inverters

Industrial Motor Drives

Use Scenario: DC-link switch in string-level PV inverter with two-stage conversion (boost + H-bridge).

IC Role / Device Role / Timing Role: High-side switch in interleaved boost stage handling 1000 V DC link transients.

Use Value: 173 mJ EAS rating ensures robustness against lightning-induced surges and inductor flyback energy.

Use Scenario: Inverter leg switch in 7.5 kW variable frequency drive (VFD) for HVAC compressors.

IC Role / Device Role / Timing Role: IGBT replacement in 6–16 kHz PWM inverter output stage with active gate driving.

Use Value: Fast body diode eliminates need for external anti-parallel SiC Schottky diodes, reducing BOM count and layout area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.065 Ω, Q_g = 72 nC, TO-247 long leads; higher gate charge increases driver loss.	Optimized for 65 kHz fixed-frequency SMPS; less suitable for >200 kHz PFC due to higher Co(er) = 135 pF.	Prefer SIHG085N60EF-GE3 when minimizing switching loss at high frequency is critical.
IXFH50N60P	R_DS(on) = 0.085 Ω, Q_g = 52 nC, TO-247 short leads; lower Q_g but higher R_DS(on) increases conduction loss above 15 A.	Better suited for medium-power motor drives where conduction dominates; lacks EAS rating.	Choose SIHG085N60EF-GE3 for avalanche-critical applications like welding or induction heating.

Compared with STW62N60M2 and IXFH50N60P, SIHG085N60EF-GE3 offers the best balance of low R_DS(on), moderate Q_g, and certified avalanche capability-making it optimal for high-reliability, high-frequency PFC and server PSU designs where both efficiency and ruggedness are required.

Availability

SIHG085N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIHG085N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The EF Series power MOSFETs are engineered for high-frequency, high-voltage switching in server, telecom, and industrial power conversion-prioritizing low FOM, fast body diode, and avalanche survivability.

FAQ

What is the maximum continuous drain current rating for SIHG085N60EF-GE3 at 100 °C case temperature?

The SIHG085N60EF-GE3 has a continuous drain current rating of 21 A at T_C = 100 °C, derated linearly from 34 A at 25 °C using a 1.82 W/°C factor. This reflects real-world thermal constraints in compact heatsink designs and ensures safe operation under sustained load conditions without exceeding the 150 °C maximum junction temperature.

Does SIHG085N60EF-GE3 have a qualified avalanche rating, and how is it tested?

Yes, SIHG085N60EF-GE3 is rated for single-pulse unclamped inductive switching (UIS) with EAS = 173 mJ, tested per JEDEC JESD24-11 at V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.5 A. This qualification confirms robustness against inductive energy spikes in PFC chokes and motor drive freewheeling paths.

What is the typical reverse recovery time (trr) of the body diode in SIHG085N60EF-GE3, and under what conditions is it measured?

The typical reverse recovery time (t_rr) of the SIHG085N60EF-GE3 body diode is 109 ns, measured at T_J = 25 °C, I_F = I_S = 17 A, di/dt = 100 A/μs, and V_R = 400 V. This value enables reliable operation in hard-switched half-bridges and reduces voltage overshoot during commutation.

How does the effective output capacitance Co(er) of SIHG085N60EF-GE3 impact switching performance?

The SIHG085N60EF-GE3 has Co(er) = 107 pF, defined as the fixed capacitance yielding the same stored energy as C_oss while V_DS rises from 0 to 400 V. This low value directly reduces turn-off energy loss (E_off ∝ V_DS² × Co(er)), making SIHG085N60EF-GE3 especially efficient in high-frequency PFC and resonant converters.

Is SIHG085N60EF-GE3 compatible with standard TO-247AC footprints and heatsinks?

Yes, SIHG085N60EF-GE3 uses the JEDEC-standard TO-247AC package with 3-pin lead assignment (Gate, Drain, Source) and dual-drain configuration (pins 2 and 4). Its mechanical dimensions-including 20.55 mm D dimension and 15.15 mm L length-match industry-standard TO-247AC heatsink mounting holes and thermal interface requirements.

SIHG085N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 84mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2733 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 184W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG085N60EF-GE3 FAQ

1.How can I place an order for SIHG085N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG085N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG085N60EF-GE3 reliable?

The price and inventory of SIHG085N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG085N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG085N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG085N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG085N60EF-GE3?

SIHG085N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG085N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG085N60EF-GE3?

For technical support, including SIHG085N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG085N60EF-GE3 requirements.

6.How does Aetrix verify that SIHG085N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG085N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG085N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG085N60EF-GE3?

All SIHG085N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG085N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG085N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHG085N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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