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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG100N60E-GE3

Name: SIHG100N60E-GE3
Brand: Vishay Siliconix
SKU: SIHG100N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG100N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG100N60E-GE3.pdf

Description:: MOSFET N-CH 600V 30A TO247AC

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Product details

Overview

SIHG100N60E-GE3 from Vishay Siliconix is a 600 V, 30 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring 0.086 Ω R_DS(on) at V_GS = 10 V, 50 nC total gate charge, and 226 mJ single-pulse avalanche energy - designed for high-efficiency switching in telecom and server power supplies.

For engineers reviewing the SIHG100N60E-GE3 datasheet, SIHG100N60E-GE3 pinout, SIHG100N60E-GE3 application, or SIHG100N60E-GE3 equivalent, key selection criteria include its 600 V V_DS, low Co(er) of 64 pF, 100 V/ns dv/dt rating, and E-series 4th-generation silicon optimized for reduced conduction and switching losses in hard-switched PFC and SMPS stages.

Technical Context

This MOSFET employs Vishay's 4th-generation E-series trench-gate silicon technology, delivering low figure-of-merit (R_DS(on) × Q_g = 4.3 nΩ·F) and reduced effective output capacitance (Co(er) = 64 pF), enabling high-frequency operation with minimized switching loss.

It integrates an avalanche-rated body diode with 358 ns typical reverse recovery time and 5.1 μC Q_rr, supporting robust unclamped inductive switching in bridge-leg and synchronous rectifier configurations without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports primary-side switching in 400 V DC bus and 380 V AC-input PFC designs
R_DS(on) typ	0.086 Ω @ V_GS = 10 V - enables <1.1 W conduction loss at 30 A continuous drain current
Q_g max	50 nC - determines gate drive power requirement and influences turn-on/turn-off timing control
E_AS	226 mJ - ensures reliable operation under unclamped inductive load transients without failure
C_oss(er)	64 pF - reduces capacitive switching loss during hard-commutation transitions
T_J range	–55 °C to +150 °C - supports operation in thermally demanding industrial and telecom environments
P_D	208 W @ T_C = 25 °C - requires heatsinking for sustained >19 A operation above 100 °C case temperature

Pinout & Package

SIHG100N60E-GE3 uses the TO-247AC package - a through-hole, high-power plastic-outline package with isolated drain tab, optimized for thermal dissipation and high-voltage isolation. The package features four leads: Gate (pin 1), Drain (pins 2 and 4), Source (pin 3).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level drive to fully enhance channel; threshold voltage 3.0–5.0 V ensures noise immunity
2 & 4 (Drain)	High-side power terminal	Electrically connected to metal tab; carries full switched current and must be mounted to heatsink with electrical isolation
3 (Source)	Reference node for gate drive	Serves as return path for load current and gate drive loop; critical for minimizing common-source inductance in high-di/dt applications

Key Features

Feature	Design Value
4th-generation E-series silicon	Reduces R_DS(on) × Q_g FOM by >25% vs. prior generation, improving efficiency in 100–300 kHz PFC stages
Avalanche energy rated (UIS)	226 mJ single-pulse rating allows safe operation under transient overloads without derating or external clamping
Low Co(er) and C_oss	64 pF effective output capacitance minimizes stored energy loss during turn-off, reducing heat in high-frequency SMPS
Enhanced body diode	358 ns t_rr and 24 A I_RRM support ZVS-assisted topologies and reduce need for external anti-parallel diodes
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 3 kW+ 48 V output telecom rectifiers with active clamp forward or LLC resonant topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input, operating at 100–200 kHz with hard switching. Use Value: Low R_DS(on) and Q_g reduce conduction and gate drive losses, directly improving system efficiency from 94% to 95.2% at full load.	Use Scenario: Boost PFC stage in redundant 19-inch rack-mounted power systems with universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Fast-switching boost switch controlling input current waveform to meet EN 61000-3-2 Class A harmonic limits. Use Value: 100 V/ns dv/dt rating and low C_iss/C_oss enable stable operation under high-line, high-temperature conditions without oscillation or shoot-through.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string inverters converting up to 1500 V DC solar array output to grid-synchronized AC. IC Role / Device Role / Timing Role: High-voltage IGBT replacement in three-level NPC or T-type inverter legs, switching at ≤20 kHz. Use Value: 600 V V_DS and 226 mJ E_AS allow direct use in 1000 V DC bus designs without series stacking or external snubbers.	Use Scenario: Inverter output stage in 7.5 kW variable frequency drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Low-side switching element in 3-phase bridge, commutating motor phase currents up to 30 A RMS. Use Value: Robust body diode (Q_rr = 5.1 μC, t_rr = 358 ns) eliminates need for discrete freewheeling diodes, simplifying layout and reducing BOM count.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 3 kW+ 48 V output telecom rectifiers with active clamp forward or LLC resonant topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input, operating at 100–200 kHz with hard switching.

Use Value: Low R_DS(on) and Q_g reduce conduction and gate drive losses, directly improving system efficiency from 94% to 95.2% at full load.

Use Scenario: Boost PFC stage in redundant 19-inch rack-mounted power systems with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Fast-switching boost switch controlling input current waveform to meet EN 61000-3-2 Class A harmonic limits.

Use Value: 100 V/ns dv/dt rating and low C_iss/C_oss enable stable operation under high-line, high-temperature conditions without oscillation or shoot-through.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string inverters converting up to 1500 V DC solar array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-voltage IGBT replacement in three-level NPC or T-type inverter legs, switching at ≤20 kHz.

Use Value: 600 V V_DS and 226 mJ E_AS allow direct use in 1000 V DC bus designs without series stacking or external snubbers.

Use Scenario: Inverter output stage in 7.5 kW variable frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Low-side switching element in 3-phase bridge, commutating motor phase currents up to 30 A RMS.

Use Value: Robust body diode (Q_rr = 5.1 μC, t_rr = 358 ns) eliminates need for discrete freewheeling diodes, simplifying layout and reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V, 48 A, R_DS(on) = 0.065 Ω, Q_g = 65 nC, TO-247 long leads	Higher current rating but larger Q_g; less optimized for high-frequency PFC	Preferred where higher continuous current headroom is needed and gate drive capability supports 65 nC charge
IXFH110N60P	600 V, 110 A, R_DS(on) = 0.042 Ω, Q_g = 120 nC, TO-247 short leads	Lower R_DS(on) but significantly higher Q_g; suited for lower-frequency motor drives	Selected when conduction loss dominates and switching frequency is ≤50 kHz

Compared with STW48N60M2 and IXFH110N60P, SIHG100N60E-GE3 offers the best balance of low Q_g-normalized R_DS(on) and avalanche ruggedness for 100–250 kHz telecom/server PFC, while avoiding excessive gate drive burden or thermal derating penalties.

Availability

SIHG100N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for SIHG100N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching in server, telecom, and industrial power conversion - emphasizing low FOM, avalanche ruggedness, and thermal robustness.

FAQ

What is the maximum continuous drain current for SIHG100N60E-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHG100N60E-GE3 is 19 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating from the 30 A rating at 25 °C and reflects practical operation with heatsink interface resistance and ambient airflow constraints. SIHG100N60E-GE3 maintains stable R_DS(on) performance across this range due to its positive temperature coefficient.

Does SIHG100N60E-GE3 have a fully rated avalanche capability, and what is the test condition?

Yes, SIHG100N60E-GE3 is fully rated for single-pulse unclamped inductive switching (UIS) with E_AS = 226 mJ. The test condition is V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4.0 A. This rating is validated per JEDEC standard JESD24-1 and confirms ruggedness against transient overloads in real-world power circuits.

What is the gate threshold voltage range for SIHG100N60E-GE3, and how does it affect drive design?

The gate threshold voltage (V_GS(th)) for SIHG100N60E-GE3 is 3.0 V to 5.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing margin against false triggering from noise. SIHG100N60E-GE3 requires ≥8 V to achieve near-minimum R_DS(on), so drive circuits must maintain stable rail voltage under load.

Can SIHG100N60E-GE3 be used in place of older Vishay 600 V MOSFETs like the SIHF100N60E?

SIHG100N60E-GE3 is the enhanced successor to SIHF100N60E, sharing identical TO-247AC package, pinout, and voltage rating, but offering improved R_DS(on) (0.086 Ω vs. 0.095 Ω), lower Q_g (33–50 nC vs. 38–55 nC), and tighter parameter distribution. SIHG100N60E-GE3 is a direct drop-in replacement with measurable efficiency gains in existing designs.

What is the thermal resistance from junction to case (R_thJC) for SIHG100N60E-GE3, and how does it impact heatsink selection?

The maximum junction-to-case thermal resistance (R_thJC) for SIHG100N60E-GE3 is 0.6 °C/W. With P_D = 208 W at T_C = 25 °C, this implies a theoretical ΔT_J-C of 125 °C - consistent with its 150 °C max T_J. For reliable 19 A operation at T_C = 100 °C, a heatsink with R_thCA ≤ 1.0 °C/W (including interface material) is recommended to keep T_J below 140 °C.

SIHG100N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1851 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG100N60E-GE3 FAQ

1.How can I place an order for SIHG100N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG100N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG100N60E-GE3 reliable?

The price and inventory of SIHG100N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG100N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG100N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG100N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG100N60E-GE3?

SIHG100N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG100N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG100N60E-GE3?

For technical support, including SIHG100N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG100N60E-GE3 requirements.

6.How does Aetrix verify that SIHG100N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG100N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG100N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG100N60E-GE3?

All SIHG100N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG100N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG100N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHG100N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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