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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG105N60EF-GE3

Name: SIHG105N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHG105N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG105N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG105N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 29A TO247AC

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Product details

Overview

SIHG105N60EF-GE3 from Vishay Siliconix is a 600 V, 29 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 0.088 Ω R_DS(on) at V_GS = 10 V, 53 nC total gate charge, and fast body diode with 125 ns reverse recovery time. It delivers low conduction and switching losses for high-efficiency hard-switched and resonant topologies in server PSUs and PFC stages.

For engineers reviewing the SIHG105N60EF-GE3 datasheet, SIHG105N60EF-GE3 pinout, SIHG105N60EF-GE3 application, or SIHG105N60EF-GE3 equivalent, key selection criteria include avalanche energy rating (226 mJ), Co(er) of 63 pF, dv/dt capability of 70 V/ns at TJ = 125 °C, and lead-free/halogen-free compliance per Vishay S19-1042-Rev. A.

Technical Context

This EF Series MOSFET employs 4th-generation E-series silicon technology optimized for high-voltage SMPS applications. Its low figure-of-merit (R_DS(on) × Q_g = 4.66 Ω·nC) and reduced effective output capacitance (Co(er) = 63 pF) enable high-frequency operation with minimized switching loss.

The integrated fast-recovery body diode supports ZVS/ZCS transitions and reduces snubber requirements. Rated for unclamped inductive switching (UIS) with 226 mJ single-pulse avalanche energy, it sustains transient overloads without failure under defined test conditions (V_DD = 120 V, L = 28.2 mH, I_AS = 4 A).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports 400 V DC bus designs with 50 % safety margin for telecom/server front-end converters
R_DS(on) typ	0.088 Ω @ V_GS = 10 V - Enables <1.5 W conduction loss at 13 A continuous drain current
Q_g max	53 nC - Determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers
E_AS	226 mJ - Ensures robustness against inductive turn-off transients in PFC and motor drive circuits
t_rr	125 ns typ - Reduces diode recovery loss and EMI vs. standard MOSFETs in bridge-leg configurations
dv/dt rating	70 V/ns @ T_J = 125 °C - Mitigates false turn-on risk in high-speed half-bridge layouts
P_D	208 W @ T_C = 25 °C - Requires heatsink with R_thJC ≤ 0.6 °C/W for full 29 A operation

Pinout & Package

TO-247AC package with isolated drain tab, 3-pin configuration, and thermal pad optimized for high-power dissipation. Standard lead finish is matte tin; RoHS-compliant and halogen-free per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 1804 pF dictates gate resistor selection for controlled dV/dt
2 (Drain)	High-side power terminal	Connected to DC bus or transformer primary; electrically tied to metal tab for thermal conduction
3 (Source)	Power return and reference node	Serves as local ground for gate driver; carries full load current and diode reverse recovery charge (Q_rr = 0.8–1.6 μC)

Key Features

Feature	Design Value
Fast body diode	125 ns t_rr, 1.2 V V_SD @ 13 A - Enables efficient synchronous rectification replacement in LLC and phase-shifted full-bridge
Low Co(er)	63 pF - Reduces capacitive turn-off loss and improves efficiency above 100 kHz switching frequencies
Avalanche rated	226 mJ E_AS - Eliminates need for external clamping in PFC boost inductors and welder output stages
High dv/dt immunity	70 V/ns @ 125 °C - Allows reliable operation in high-di/dt motor drive inverters without Miller clamping
Thermal resistance	R_thJC = 0.6 °C/W - Supports >200 W power handling with standard TO-247 heatsinking

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switch in 3.3 kW CRPS-compliant AC-DC front-end with interleaved PFC + LLC resonant converter. IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC stage and LLC half-bridge power switches. Use Value: 0.088 Ω R_DS(on) and 53 nC Q_g enable >96 % system efficiency at full load while maintaining thermal margin below 105 °C case temperature.	Use Scenario: Output rectification and isolation switching in 48 V distributed power architecture (DPA) telecom rectifier modules. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier and isolation FET in active clamp forward topology. Use Value: Fast 125 ns body diode recovery and low Q_rr reduce cross-conduction loss and improve light-load regulation vs. discrete Schottky solutions.
Solar Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string-level 5–10 kW photovoltaic inverters with two-stage conversion (boost + H-bridge). IC Role / Device Role / Timing Role: High-side switch in boost stage and leg switch in three-phase inverter bridge. Use Value: 226 mJ E_AS withstands PV array surge events; 70 V/ns dv/dt rating prevents spurious turn-on during fast IGBT gate transitions.	Use Scenario: Inverter output stage in 7.5 kW HVAC compressor drives using space-vector PWM at 16 kHz. IC Role / Device Role / Timing Role: Phase-leg power switch with integrated body diode conducting freewheeling current during dead-time intervals. Use Value: Low 1.2 V V_SD and 125 ns t_rr minimize conduction loss and diode reverse recovery spikes, reducing EMI filter size by 30 %.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switch in 3.3 kW CRPS-compliant AC-DC front-end with interleaved PFC + LLC resonant converter.

IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC stage and LLC half-bridge power switches.

Use Value: 0.088 Ω R_DS(on) and 53 nC Q_g enable >96 % system efficiency at full load while maintaining thermal margin below 105 °C case temperature.

Use Scenario: Output rectification and isolation switching in 48 V distributed power architecture (DPA) telecom rectifier modules.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier and isolation FET in active clamp forward topology.

Use Value: Fast 125 ns body diode recovery and low Q_rr reduce cross-conduction loss and improve light-load regulation vs. discrete Schottky solutions.

Solar Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string-level 5–10 kW photovoltaic inverters with two-stage conversion (boost + H-bridge).

IC Role / Device Role / Timing Role: High-side switch in boost stage and leg switch in three-phase inverter bridge.

Use Value: 226 mJ E_AS withstands PV array surge events; 70 V/ns dv/dt rating prevents spurious turn-on during fast IGBT gate transitions.

Use Scenario: Inverter output stage in 7.5 kW HVAC compressor drives using space-vector PWM at 16 kHz.

IC Role / Device Role / Timing Role: Phase-leg power switch with integrated body diode conducting freewheeling current during dead-time intervals.

Use Value: Low 1.2 V V_SD and 125 ns t_rr minimize conduction loss and diode reverse recovery spikes, reducing EMI filter size by 30 %.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 0.075 Ω, Q_g = 65 nC, TO-247 long leads; no UIS rating specified	Lacks avalanche energy spec; requires external snubbers in inductive loads	Prefer SIHG105N60EF-GE3 where robustness against load dump or short-circuit transients is required
IXFH110N60P3	R_DS(on) = 0.062 Ω, Q_g = 105 nC, higher gate charge increases driver loss	Higher Q_g demands stronger gate driver; slower switching than SIHG105N60EF-GE3	Choose SIHG105N60EF-GE3 for balanced trade-off between conduction loss, switching speed, and drive simplicity

Compared with STW62N60M2 and IXFH110N60P3, SIHG105N60EF-GE3 offers superior avalanche ruggedness, lower gate charge for faster switching, and verified fast body diode performance-making it optimal for high-reliability PFC, solar, and industrial inverter designs where transient immunity and efficiency coexist.

Availability

SIHG105N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHG105N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.

The EF Series is designed specifically for high-voltage, high-frequency switching applications including PFC, server/telecom PSUs, and industrial inverters-leveraging 4th-gen silicon to optimize R_DS(on) × Q_g and body diode speed.

FAQ

What is the maximum continuous drain current for SIHG105N60EF-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHG105N60EF-GE3 is 19 A at T_C = 100 °C, derated linearly from 29 A at 25 °C using a 1.67 W/°C factor. This value assumes proper heatsinking with R_thJC ≤ 0.6 °C/W and ambient conditions compliant with JEDEC JESD51 standards. SIHG105N60EF-GE3 must not exceed its 150 °C maximum junction temperature under any operating condition.

Does SIHG105N60EF-GE3 have a qualified avalanche rating, and how is it tested?

Yes, SIHG105N60EF-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 226 mJ. Testing follows JEDEC standard JESD24-1: V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, I_AS = 4 A. SIHG105N60EF-GE3 passes 100 % production avalanche screening per Vishay internal qualification.

What is the gate threshold voltage range for SIHG105N60EF-GE3, and how does it affect drive design?

The gate threshold voltage (V_GS(th)) for SIHG105N60EF-GE3 is specified from 3 V to 5 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise. SIHG105N60EF-GE3 is not a logic-level device; use ≥10 V drive for full R_DS(on) specification and optimal switching performance.

How does the body diode performance of SIHG105N60EF-GE3 compare to standard MOSFETs in hard-switched applications?

SIHG105N60EF-GE3 features an optimized fast body diode with t_rr = 125 ns (typ), Q_rr = 0.8–1.6 μC, and V_SD = 1.2 V @ 13 A. Compared to standard 600 V MOSFETs (t_rr > 250 ns), this reduces reverse recovery loss by >40 % and eliminates voltage spikes that cause EMI and gate oscillation. SIHG105N60EF-GE3's diode is characterized and guaranteed across temperature and current ranges.

Is SIHG105N60EF-GE3 suitable for use in zero-voltage switching (ZVS) topologies, and why?

Yes, SIHG105N60EF-GE3 is well-suited for ZVS topologies such as LLC resonant converters due to its low Co(er) of 63 pF and fast body diode (t_rr = 125 ns). These characteristics minimize capacitive turn-off loss and ensure reliable soft turn-on via body diode conduction during dead time. SIHG105N60EF-GE3's 70 V/ns dv/dt rating further enhances ZVS stability in high-frequency operation.

SIHG105N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 102mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1804 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG105N60EF-GE3 FAQ

1.How can I place an order for SIHG105N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG105N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG105N60EF-GE3 reliable?

The price and inventory of SIHG105N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG105N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG105N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG105N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG105N60EF-GE3?

SIHG105N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG105N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG105N60EF-GE3?

For technical support, including SIHG105N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG105N60EF-GE3 requirements.

6.How does Aetrix verify that SIHG105N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG105N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG105N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG105N60EF-GE3?

All SIHG105N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG105N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG105N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHG105N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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