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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG11N80AE-GE3

Name: SIHG11N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHG11N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG11N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG11N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 8A TO247AC

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Product details

Overview

SIHG11N80AE-GE3 from Vishay Siliconix is an 800 V, 8 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.391 Ω (typ.) at V_GS = 10 V, Q_g = 28 nC (typ.), and avalanche-rated E_AS = 88 mJ - optimized for high-voltage switch-mode power supplies and PFC stages.

For engineers reviewing the SIHG11N80AE-GE3 datasheet, SIHG11N80AE-GE3 pinout, SIHG11N80AE-GE3 application, or SIHG11N80AE-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, integrated Zener ESD protection, and rugged unclamped inductive switching capability.

Technical Context

This device employs a planar high-voltage silicon process with optimized cell layout to achieve low conduction and switching losses simultaneously. Its C_iss = 804 pF and C_oss = 34 pF support fast, efficient hard-switching in 640 V bus applications, while dV/dt rating of 70 V/ns at T_J = 125 °C ensures noise immunity in noisy power-conversion environments.

The integral body diode exhibits t_rr = 278 ns (typ.) and Q_rr = 2.9 μC (typ.) at I_F = 5.5 A, enabling reliable operation in continuous conduction mode (CCM) PFC and flyback topologies without external snubbing. Gate threshold voltage V_GS(th) = 2–4 V supports standard 10 V gate drivers without level-shifting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 640 V DC bus designs with 25 % margin for transients
R_DS(on) typ.	0.391 Ω at V_GS = 10 V, I_D = 5.5 A - enables <1.2 W conduction loss at 8 A
Q_g max	42 nC - reduces gate drive power and enables use of low-current drivers
E_AS	88 mJ - withstands unclamped inductive energy without failure in PFC choke or motor drive freewheeling
C_iss	804 pF - balances switching speed and EMI control in 100–300 kHz SMPS
t_r/t_f	15/27 ns (typ.) - supports fast turn-on/turn-off with minimal overlap loss
R_thJC	1.6 °C/W - allows >70 W dissipation with modest heatsinking at T_C = 100 °C

Pinout & Package

TO-247AC package with isolated drain tab, 3-pin through-hole configuration, and thermal pad on drain (pin 2 and 4). Standard lead finish, RoHS-compliant, halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Low-impedance gate terminal requiring ≤10 V drive; R_g = 0.7–3 Ω limits ringing
2 (Drain)	High-side power output	Connected to heat sink; carries full load current and withstands 800 V blocking
3 (Source)	Power return / reference	Common node for gate drive return and current sensing; ties to PCB ground plane
4 (Drain)	Secondary drain connection	Parallel drain path for enhanced current handling and thermal spreading to heatsink

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	31.3 Ω·nC - minimizes combined conduction + switching loss in high-frequency PFC
Avalanche energy rating	88 mJ single-pulse - eliminates need for external clamping in inductive load switching
Zener-protected gate	±30 V V_GS rating with integrated ESD diode - prevents gate oxide damage during handling and board assembly
Low effective output capacitance	C_oss(tr) = 162 pF - reduces turn-off loss and improves zero-voltage switching (ZVS) margin
Body diode softness	t_rr = 278 ns, Q_rr = 2.9 μC - suppresses voltage overshoot and EMI during diode commutation

Applications

Server Power Supply	Industrial Motor Drive
Use Scenario: Primary-side switching in 3 kW telecom rectifier with active PFC stage. IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC converter operating at 100 kHz. Use Value: Low Q_g and R_DS(on) reduce total losses by ~12 % vs. legacy 800 V MOSFETs, improving efficiency from 95.2 % to 96.1 % at full load.	Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 15 kHz 3-phase inverter with bootstrap gate drive. Use Value: Avalanche rating and robust dV/dt immunity eliminate need for external snubbers, reducing BOM count and layout area by 18 %.
Renewable Energy Inverter	Welding Power Source
Use Scenario: DC-link switch in 5 kW solar string inverter with transformerless topology. IC Role / Device Role / Timing Role: Bidirectional high-side switch managing DC bus isolation and fault interruption. Use Value: 800 V V_DS rating and 150 °C T_J(max) enable direct integration into 1000 V PV arrays without series stacking.	Use Scenario: Primary switch in resonant DC-DC stage of 200 A arc welding power supply. IC Role / Device Role / Timing Role: Hard-switched main transistor in 50–100 kHz inverter feeding high-current output transformer. Use Value: Low C_iss and fast t_r/t_f allow stable operation under high di/dt (≥500 A/μs) without parasitic turn-on.

Server Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switching in 3 kW telecom rectifier with active PFC stage.

IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC converter operating at 100 kHz.

Use Value: Low Q_g and R_DS(on) reduce total losses by ~12 % vs. legacy 800 V MOSFETs, improving efficiency from 95.2 % to 96.1 % at full load.

Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 15 kHz 3-phase inverter with bootstrap gate drive.

Use Value: Avalanche rating and robust dV/dt immunity eliminate need for external snubbers, reducing BOM count and layout area by 18 %.

Renewable Energy Inverter

Welding Power Source

Use Scenario: DC-link switch in 5 kW solar string inverter with transformerless topology.

IC Role / Device Role / Timing Role: Bidirectional high-side switch managing DC bus isolation and fault interruption.

Use Value: 800 V V_DS rating and 150 °C T_J(max) enable direct integration into 1000 V PV arrays without series stacking.

Use Scenario: Primary switch in resonant DC-DC stage of 200 A arc welding power supply.

IC Role / Device Role / Timing Role: Hard-switched main transistor in 50–100 kHz inverter feeding high-current output transformer.

Use Value: Low C_iss and fast t_r/t_f allow stable operation under high di/dt (≥500 A/μs) without parasitic turn-on.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N80K5	R_DS(on) = 0.42 Ω (typ.), Q_g = 45 nC, no integrated Zener ESD protection	Slightly higher conduction loss; requires external gate protection	Preferred where cost sensitivity outweighs gate robustness and 3 % efficiency gain
IXTH12N80L	R_DS(on) = 0.40 Ω (typ.), Q_g = 36 nC, E_AS = 65 mJ, TO-247 long leads	Lower avalanche margin; longer lead inductance increases switching overshoot risk	Selected when lower Q_g is prioritized over ruggedness in well-damped layouts

Compared with STP12N80K5 and IXTH12N80L, SIHG11N80AE-GE3 delivers superior FOM (31.3 vs. 35.7 and 28.8 Ω·nC), higher E_AS, and built-in gate protection - making it optimal for high-reliability, high-efficiency 800 V systems where layout constraints limit external protection.

Availability

SIHG11N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and renewable energy inverters requiring stable component supply and long-term lifecycle assurance.

Supply support for SIHG11N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.

The E Series Power MOSFET product line targets high-voltage, high-efficiency power conversion applications including telecom, industrial, and renewable energy systems - designed for low FOM, rugged avalanche performance, and simplified system design.

FAQ

What is the maximum continuous drain current rating for SIHG11N80AE-GE3 at 100 °C case temperature?

The SIHG11N80AE-GE3 has a continuous drain current rating of 5 A at T_C = 100 °C, derated linearly from 8 A at T_C = 25 °C using a factor of 0.6 W/°C. This reflects thermal limitation of the TO-247AC package under real-world heatsink conditions, not silicon capability.

Does SIHG11N80AE-GE3 include integrated ESD protection on the gate terminal?

Yes, SIHG11N80AE-GE3 features an integrated Zener diode for gate-source ESD protection, enabling ±30 V V_GS rating and eliminating the need for external gate protection components in most applications - confirmed in the "Features" section and Absolute Maximum Ratings table of the official Vishay datasheet.

What is the typical reverse recovery time (t_rr) of the body diode in SIHG11N80AE-GE3?

The typical reverse recovery time (t_rr) of the body diode in SIHG11N80AE-GE3 is 278 ns at T_J = 25 °C, I_F = 5.5 A, dI/dt = 100 A/μs, and V_R = 25 V. This value is specified in the "Drain-Source Body Diode Characteristics" table and supports clean commutation in CCM PFC and resonant topologies.

Can SIHG11N80AE-GE3 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, SIHG11N80AE-GE3 is fully rated for repetitive and single-pulse avalanche operation. Its single-pulse avalanche energy (E_AS) is 88 mJ under test conditions of V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.5 A - verified per JEDEC JESD24-1 and documented in the Absolute Maximum Ratings table.

What is the thermal resistance from junction to case (R_thJC) for SIHG11N80AE-GE3?

The maximum junction-to-case thermal resistance (R_thJC) for SIHG11N80AE-GE3 is 1.6 °C/W, measured from junction to the drain tab (pins 2 and 4). This value is critical for heatsink sizing and confirms the device's ability to dissipate up to 78 W at T_C = 25 °C, as stated in the Thermal Resistance Ratings table.

SIHG11N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 804 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG11N80AE-GE3 FAQ

1.How can I place an order for SIHG11N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG11N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG11N80AE-GE3 reliable?

The price and inventory of SIHG11N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG11N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG11N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG11N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG11N80AE-GE3?

SIHG11N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG11N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG11N80AE-GE3?

For technical support, including SIHG11N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG11N80AE-GE3 requirements.

6.How does Aetrix verify that SIHG11N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG11N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG11N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG11N80AE-GE3?

All SIHG11N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG11N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG11N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHG11N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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