Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG11N80E-GE3

Name: SIHG11N80E-GE3
Brand: Vishay Siliconix
SKU: SIHG11N80E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHG11N80E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG11N80E-GE3.pdf

Description:: MOSFET N-CH 800V 12A TO247AC

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,226

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHG11N80E-GE3 from Vishay Siliconix is an 800 V, 12 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring 0.38 Ω R_DS(on) at V_GS = 10 V, 88 nC total gate charge, and 226 mJ single-pulse avalanche energy - designed for high-voltage switching in telecom power supplies and solar inverters.

For engineers reviewing the SIHG11N80E-GE3 datasheet, SIHG11N80E-GE3 pinout, SIHG11N80E-GE3 application, or SIHG11N80E-GE3 equivalent, this page delivers verified electrical specs, thermal performance data, body diode recovery characteristics, and real-world use context for high-efficiency SMPS and PFC stage design.

Technical Context

This device uses planar vertical DMOS technology optimized for high-voltage hard-switching applications. Its low R_DS(on) × Q_g figure-of-merit (FOM) and reduced C_iss (1670 pF) enable fast switching with minimized conduction and gate drive losses.

The integrated body diode supports unclamped inductive switching with 345 ns typical reverse recovery time and 4.2 μC Q_rr, while the 0.7 °C/W junction-to-case thermal resistance ensures robust thermal management under continuous 179 W power dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports primary-side switching in 400 V DC bus systems with 100 V margin
R_DS(on) typ	0.38 Ω at V_GS = 10 V - enables <1.2 W conduction loss at 5.5 A RMS in PFC boost stages
Q_g max	88 nC - determines gate driver current requirement (~1.8 A peak for 50 ns rise time)
E_AS	226 mJ - allows reliable operation under unclamped inductive load transients without derating
R_thJC	0.7 °C/W - permits direct heatsink mounting for thermal path optimization in high-power converters
C_iss	1670 pF - impacts Miller effect and gate drive loop stability in >100 kHz topologies
V_GS(th)	2–4 V - ensures clean turn-on with standard 10 V gate drivers and avoids spurious conduction

Pinout & Package

TO-247AC package with isolated drain tab, 3-pin configuration, and 0.7 °C/W junction-to-case thermal resistance. Mounting surface is electrically connected to Drain (Pin 2 & Pin 4).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nA leakage current handling; sensitive to ESD
2 (Drain)	Main power output	High-voltage drain terminal tied to heatsink; carries full load current and switching voltage stress
3 (Source)	Power return reference	Low-side switching node; defines local ground for gate drive and current sensing
4 (Drain)	Secondary drain connection	Redundant drain terminal for enhanced current sharing and thermal spreading in high-current PCB layouts

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	33.4 Ω·nC - reduces combined switching + conduction loss in high-frequency PFC designs
Avalanche-rated (UIS)	226 mJ single-pulse - eliminates need for external snubbers in inductive load switching
Ultra-low Q_gd/Q_g ratio	18 % - improves Miller immunity and enables stable operation with minimal gate resistor
Body diode soft recovery	345 ns t_rr, 4.2 μC Q_rr - minimizes voltage overshoot and EMI during synchronous rectification
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switching in 3 kW telecom rectifier with active PFC and LLC resonant converter. IC Role / Device Role / Timing Role: High-voltage N-channel switch in boost PFC stage operating at 65–100 kHz. Use Value: 0.38 Ω R_DS(on) and 88 nC Q_g deliver >96 % efficiency at full load while maintaining thermal margin on standard heatsinks.	Use Scenario: DC-link switching in string-level 5–10 kW photovoltaic inverters with transformerless topology. IC Role / Device Role / Timing Role: 800 V bridge leg switch handling 600–1000 V DC bus with bidirectional current capability. Use Value: 226 mJ E_AS rating withstands grid fault transients; 150 °C max junction temperature supports outdoor ambient operation.
Industrial Motor Drive	Fluorescent Ballast
Use Scenario: Inverter output stage in 7.5 kW HVAC variable-frequency drives with regenerative braking. IC Role / Device Role / Timing Role: IGBT replacement in 3-phase inverter legs operating up to 16 kHz PWM frequency. Use Value: Low C_iss (1670 pF) and fast turn-off (110 ns td(off)) reduce switching losses by 18 % vs. legacy 800 V MOSFETs.	Use Scenario: Resonant half-bridge switch in electronic fluorescent lamp ballasts driving 40–100 W lamps. IC Role / Device Role / Timing Role: High-reliability switching element in high-Q resonant tank with zero-voltage switching (ZVS) operation. Use Value: Soft-recovery body diode (t_rr = 345 ns) prevents lamp flicker and extends electrode life under frequent hot restrike conditions.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switching in 3 kW telecom rectifier with active PFC and LLC resonant converter.

IC Role / Device Role / Timing Role: High-voltage N-channel switch in boost PFC stage operating at 65–100 kHz.

Use Value: 0.38 Ω R_DS(on) and 88 nC Q_g deliver >96 % efficiency at full load while maintaining thermal margin on standard heatsinks.

Use Scenario: DC-link switching in string-level 5–10 kW photovoltaic inverters with transformerless topology.

IC Role / Device Role / Timing Role: 800 V bridge leg switch handling 600–1000 V DC bus with bidirectional current capability.

Use Value: 226 mJ E_AS rating withstands grid fault transients; 150 °C max junction temperature supports outdoor ambient operation.

Industrial Motor Drive

Fluorescent Ballast

Use Scenario: Inverter output stage in 7.5 kW HVAC variable-frequency drives with regenerative braking.

IC Role / Device Role / Timing Role: IGBT replacement in 3-phase inverter legs operating up to 16 kHz PWM frequency.

Use Value: Low C_iss (1670 pF) and fast turn-off (110 ns td(off)) reduce switching losses by 18 % vs. legacy 800 V MOSFETs.

Use Scenario: Resonant half-bridge switch in electronic fluorescent lamp ballasts driving 40–100 W lamps.

IC Role / Device Role / Timing Role: High-reliability switching element in high-Q resonant tank with zero-voltage switching (ZVS) operation.

Use Value: Soft-recovery body diode (t_rr = 345 ns) prevents lamp flicker and extends electrode life under frequent hot restrike conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW12N80K5	Higher R_DS(on) (0.48 Ω), lower Q_g (55 nC), same 800 V rating and TO-247 package	Better suited for ZVS topologies where gate loss dominates; less optimal for hard-switched PFC	Select when prioritizing gate drive efficiency over conduction loss in resonant converters
IXTH12N80L	Lower V_GS(th) (1.5–2.5 V), higher C_iss (2200 pF), same 800 V/12 A rating and TO-247AB package	More sensitive to noise-induced turn-on; requires tighter gate drive control in noisy industrial environments	Prefer for logic-level gate drive compatibility but verify noise immunity in final layout

Compared with STW12N80K5 and IXTH12N80L, SIHG11N80E-GE3 offers the lowest R_DS(on) × Q_g FOM among 800 V 12 A MOSFETs, making it optimal for high-efficiency hard-switched PFC and solar inverter applications where both conduction and switching losses must be minimized simultaneously.

Availability

SIHG11N80E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHG11N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.

The SIHG11N80E-GE3 belongs to Vishay's E Series Power MOSFET product line, engineered specifically for high-voltage, high-efficiency switching in telecom, industrial, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIHG11N80E-GE3 at 100 °C case temperature?

The SIHG11N80E-GE3 has a continuous drain current rating of 8 A at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating from the 12 A rating at 25 °C reflects thermal limitations of the TO-247AC package and must be applied in thermal design calculations for sustained operation in enclosed or high-ambient environments. The linear derating factor is 1.4 W/°C beyond 100 °C.

Does SIHG11N80E-GE3 support avalanche operation, and what is its rated energy?

Yes, SIHG11N80E-GE3 is fully rated for repetitive unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 226 mJ under standardized test conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 4.0 A). This rating is validated per JEDEC standards and enables robust operation in flyback, forward, and resonant converter topologies without external clamping circuits.

What are the key body diode parameters of SIHG11N80E-GE3 relevant to synchronous rectification?

The SIHG11N80E-GE3 body diode exhibits a forward voltage (V_SD) of 1.2 V at 5.5 A and 25 °C, reverse recovery time (t_rr) of 345 ns (typ), and reverse recovery charge (Q_rr) of 4.2 μC. These values indicate moderate softness and low stored charge - advantageous for reducing commutation losses and EMI in quasi-resonant and LLC converters where the body diode conducts during dead-time intervals.

Is SIHG11N80E-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHG11N80E-GE3 is lead (Pb)-free and halogen-free, qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, per its ordering information and package documentation. It meets JEDEC J-STD-020 moisture sensitivity level 1, eliminating bake requirements prior to assembly and supporting standard SMT manufacturing flow.

How does the gate charge profile of SIHG11N80E-GE3 impact gate driver selection?

The SIHG11N80E-GE3 has a total gate charge (Q_g) of 44–88 nC and gate-drain charge (Q_gd) of 16 nC, resulting in a Q_gd/Q_g ratio of ~18 %. This low ratio indicates strong Miller immunity, allowing use of moderate-strength gate drivers (e.g., 1–2 A peak) without excessive Miller-induced shoot-through risk. Driver selection should target <50 ns turn-on delay and ensure sufficient current to charge 88 nC within desired dV/dt constraints.

SIHG11N80E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 440mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 88 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1670 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG11N80E-GE3 FAQ

1.How can I place an order for SIHG11N80E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG11N80E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG11N80E-GE3 reliable?

The price and inventory of SIHG11N80E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG11N80E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG11N80E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG11N80E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG11N80E-GE3?

SIHG11N80E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG11N80E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG11N80E-GE3?

For technical support, including SIHG11N80E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG11N80E-GE3 requirements.

6.How does Aetrix verify that SIHG11N80E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG11N80E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG11N80E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG11N80E-GE3?

All SIHG11N80E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG11N80E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG11N80E-GE3 part is unused and in its original packaging.

Return procedure for SIHG11N80E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …