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Vishay Siliconix SIHG120N60E-GE3
- Part No.:
- SIHG120N60E-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHG120N60E-GE3.pdf
- Description:
- MOSFET N-CH 600V 25A TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:4,565
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Product details
Overview
SIHG120N60E-GE3 from Vishay Siliconix is a 600 V, 25 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring 0.104 Ω RDS(on) at VGS = 10 V, 45 nC total gate charge, and 88 mJ single-pulse avalanche energy - designed for high-efficiency switching in telecom power supplies, PFC stages, and solar inverters.
For engineers reviewing the SIHG120N60E-GE3 datasheet, SIHG120N60E-GE3 pinout, SIHG120N60E-GE3 application, or SIHG120N60E-GE3 equivalent, key selection criteria include its low FOM (RDS(on) × Qg), reduced Coss(er) of 56 pF, 70 V/ns dv/dt rating, and robust 150 °C junction temperature capability.
Technical Context
This E-series MOSFET employs 4th-generation planar trench technology optimized for hard-switched SMPS topologies. Its low effective output capacitance (Coss(er) = 56 pF) and fast switching (td(off) ≤ 62 ns, tf ≤ 66 ns) reduce turn-off losses in high-frequency PFC and DC/DC converters.
The device integrates an avalanche-rated body diode with trr = 322–870 ns and Qrr = 4.9–18.4 μC, enabling reliable operation in inductive load switching and freewheeling paths without external snubbers in well-designed layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports 400 V AC input rectified systems with margin for surge and ringing |
| RDS(on) typ | 0.104 Ω at VGS = 10 V, TJ = 25 °C - enables <1.5 W conduction loss at 12 A continuous current |
| Qg max | 45 nC - determines gate drive power requirement and influences switching speed control |
| EAS | 88 mJ - ensures ruggedness against unclamped inductive switching events in motor drives and welders |
| RthJC | 0.7 °C/W - allows >150 W power dissipation with moderate heatsinking at TC = 100 °C |
| Coss(er) | 56 pF - reduces capacitive turn-on loss and improves light-load efficiency in resonant topologies |
| ID cont @ TC = 100 °C | 16 A - defines usable current derating for sustained operation in enclosed industrial environments |
Pinout & Package
TO-247AC package with isolated drain tab (pin 2 and pin 4 both connected to drain), standard 3-lead configuration, and thermal pad optimized for vertical heat transfer to heatsink. Lead finish is lead (Pb)-free and halogen-free per JEDEC TO-247 outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level drive; requires <45 nC charge for full enhancement; Rg = 0.3–1.3 Ω internal gate resistance |
| 2 (Drain) | Main high-side current path | Connected to high-voltage DC bus; electrically tied to metal tab; must be insulated from heatsink unless floating |
| 3 (Source) | Reference node / return path | Serves as local ground reference for gate drive; carries full load current and diode reverse recovery current |
| 4 (Drain) | Secondary drain connection | Redundant drain terminal for improved current sharing and lower parasitic inductance in high-di/dt applications |
Key Features
| Feature | Design Value |
|---|---|
| Low figure-of-merit (RDS(on) × Qg) | 4.69 Ω·nC - balances conduction and switching losses for 100–300 kHz PFC and LLC designs |
| Avalanche energy rated (UIS) | 88 mJ - eliminates need for external clamping in flyback and forward converter primary switches |
| Reduced Coss(er) | 56 pF - cuts stored output capacitance energy (Eoss) by ~30% vs. prior generation, lowering turn-on loss |
| Body diode trr and Qrr | 322 ns / 4.9 μC (typ) - enables ZVS-capable operation and reduces diode-induced voltage overshoot |
| dv/dt ruggedness | 70 V/ns (TJ = 125 °C) - suppresses false turn-on in high-noise bridge-leg configurations |
Applications
| Telecom Rectifier Module | Solar PV Inverter DC/AC Stage |
|---|---|
Use Scenario: High-density 48 V output rectification in -48 V telecom systems with 3 kW per rack unit. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 200 kHz in phase-shifted full-bridge topology. Use Value: 0.104 Ω RDS(on) minimizes I²R loss under 25 A peak load; 88 mJ EAS withstands line transients during hot-swap events. |
Use Scenario: Three-phase inverter leg switching in 10 kW string inverters with 600 V DC link. IC Role / Device Role / Timing Role: High-side N-channel switch in IGBT replacement configuration with active gate driving. Use Value: 70 V/ns dv/dt rating prevents spurious turn-on during bus voltage transitions; TO-247AC thermal performance sustains 150 °C junction under partial shading conditions. |
| Industrial Induction Heater | PFC Front-End for Server PSU |
Use Scenario: Half-bridge resonant inverter stage delivering 5–20 kHz variable-frequency heating power to induction coils. IC Role / Device Role / Timing Role: Fast-switching main switch handling repetitive 66 A pulsed drain current (IDM) and high di/dt. Use Value: Low Qgd/Qg ratio (12/45 = 27%) improves Miller immunity; 16 A continuous rating at 100 °C case supports forced-air-cooled enclosures. |
Use Scenario: Active boost PFC stage in 1.5 kW redundant server power supply with universal AC input. IC Role / Device Role / Timing Role: Boost switch operating at 70–100 kHz with critical conduction mode (CrM) control. Use Value: 45 nC Qg enables efficient gate driver sizing; low Coss(er) reduces dead-time loss and improves THD at light loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N60M2 | RDS(on) = 0.115 Ω, Qg = 52 nC, Coss(er) = 68 pF, TO-247 long leads | Higher switching loss due to +15% Qg and +21% Coss(er); same 600 V/25 A rating | Acceptable where layout allows higher gate drive capability and thermal margin exists for extra 0.7 W conduction loss |
| IXFH32N60P | RDS(on) = 0.145 Ω, Qg = 40 nC, EAS = 65 mJ, TO-247 non-isolated tab | Lower avalanche rating and +39% RDS(on); tighter Qg but higher on-state loss dominates at >10 A | Only suitable for non-avalanche-critical applications with conservative voltage derating and lower average current |
Compared with STW62N60M2 and IXFH32N60P, SIHG120N60E-GE3 delivers superior FOM (4.69 vs. 5.98 and 5.80 Ω·nC), higher EAS, and lower Coss(er), making it optimal for high-reliability, high-frequency PFC and inverter legs where loss and ruggedness are co-constrained.
Availability
SIHG120N60E-GE3 is available at Aetrix Electronics and suitable for telecom rectifiers, solar PV inverters, and industrial induction heaters requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIHG120N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.
The SIHG120N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, high-voltage switching in demanding industrial, renewable energy, and communications infrastructure applications.
FAQ
What is the maximum continuous drain current rating for SIHG120N60E-GE3 at 100 °C case temperature?
The SIHG120N60E-GE3 has a continuous drain current rating of 16 A when the case temperature (TC) is maintained at 100 °C. This value reflects thermal derating from the 25 °C rating of 25 A and is validated under steady-state conditions with proper heatsinking. The linear derating factor is 1.4 W/°C beyond TC = 100 °C, and operation above 150 °C junction temperature is prohibited.
Does SIHG120N60E-GE3 support gate drive at 5 V logic level?
No, SIHG120N60E-GE3 is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from 3.0 V to 5.0 V, but full enhancement and specified RDS(on) require VGS = 10 V. Driving at 5 V results in significantly elevated RDS(on) (>0.5 Ω) and unstable switching behavior. The device must be driven with a 10 V ±10% gate-source voltage for reliable operation.
What is the significance of the "-GE3" suffix in SIHG120N60E-GE3?
The "-GE3" suffix in SIHG120N60E-GE3 indicates a lead (Pb)-free and halogen-free version compliant with RoHS Directive 2011/65/EU and Vishay's material categorization standard. It denotes packaging in TO-247AC with matte tin-plated leads, no intentional use of brominated flame retardants, and full traceability per Vishay document 99912. This suffix does not affect electrical specifications.
How is the avalanche energy rating of SIHG120N60E-GE3 verified and applied in circuit design?
The SIHG120N60E-GE3 is rated for 88 mJ single-pulse avalanche energy (EAS) under defined test conditions: VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 2.5 A. This rating validates ruggedness against unclamped inductive switching events. Designers must ensure actual circuit energy (½ × L × I²) remains below 88 mJ and limit repetitive stress to avoid cumulative degradation.
Can SIHG120N60E-GE3 be used in parallel configurations, and what layout considerations apply?
Yes, SIHG120N60E-GE3 supports paralleling due to its positive RDS(on) temperature coefficient, which promotes current sharing. Critical layout requirements include matched gate trace lengths (<2 mm difference), individual gate resistors (9.1 Ω typical), Kelvin source connections, and symmetrical power loop inductance. Thermal coupling via shared heatsink is recommended to equalize junction temperatures and prevent thermal runaway.
SIHG120N60E-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 120mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1562 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 179W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
SIHG120N60E-GE3 FAQ
1.How can I place an order for SIHG120N60E-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHG120N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHG120N60E-GE3 reliable?
The price and inventory of SIHG120N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG120N60E-GE3 is usually 5 days.
3.What payment methods are accepted for SIHG120N60E-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG120N60E-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHG120N60E-GE3?
SIHG120N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHG120N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHG120N60E-GE3?
For technical support, including SIHG120N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG120N60E-GE3 requirements.
6.How does Aetrix verify that SIHG120N60E-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHG120N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG120N60E-GE3 meets industry standards.
7.What is the process for return or replacement of SIHG120N60E-GE3?
All SIHG120N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG120N60E-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHG120N60E-GE3 part is unused and in its original packaging.
Return procedure for SIHG120N60E-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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