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Vishay Siliconix SIHG125N60EF-GE3
- Part No.:
- SIHG125N60EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHG125N60EF-GE3.pdf
- Description:
- MOSFET N-CH 600V 25A TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:500
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Product details
Overview
SIHG125N60EF-GE3 from Vishay Siliconix is a 600 V, 25 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 0.109 Ω RDS(on) at VGS = 10 V, 47 nC total gate charge, and fast body diode with 117 ns reverse recovery time - optimized for high-efficiency PFC and SMPS stages in telecom and server power supplies.
For engineers reviewing the SIHG125N60EF-GE3 datasheet, SIHG125N60EF-GE3 pinout, SIHG125N60EF-GE3 application, or SIHG125N60EF-GE3 equivalent, key selection criteria include avalanche-rated UIS performance (88 mJ), low Co(er) of 54 pF for reduced switching loss, and thermal resistance RthJC of 0.7 °C/W enabling high-power-density designs without forced airflow.
Technical Context
This EF-series MOSFET employs 4th-generation E-series silicon technology to achieve low figure-of-merit (RDS(on) × Qg = 5.13 Ω·nC), enabling simultaneous reduction in conduction and switching losses. Its fast intrinsic body diode supports ZVS/ZCS topologies and eliminates need for external anti-parallel diodes in bridge configurations.
The device is rated for repetitive unclamped inductive switching (UIS) up to 88 mJ and exhibits controlled dv/dt capability (70 V/ns at TJ = 125 °C), ensuring robust operation in hard-switched converters. Gate threshold voltage (3.0–5.0 V) and low gate leakage (<100 nA at ±20 V) support stable drive across industrial temperature range (−55 to +150 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in telecom/server PFC stages |
| RDS(on) typ. | 0.109 Ω at VGS = 10 V, ID = 12 A - enables <1.3 W conduction loss at 12 A, critical for thermally constrained 1U power supplies |
| Qg max. | 47 nC - determines gate driver current requirement (~1.9 A peak for 25 ns rise time with 9.1 Ω Rg) |
| EAS | 88 mJ - ensures single-pulse avalanche ruggedness during startup, overload, or short-circuit events without derating |
| trr | 117 ns typical - reduces diode recovery loss and EMI in phase-shifted full-bridge and LLC resonant converters |
| RthJC | 0.7 °C/W - allows 179 W dissipation with ≤125 °C case-to-junction rise, supporting heatsink-limited industrial designs |
| ID cont. | 25 A at TC = 25 °C - defines maximum continuous current under ideal heatsinking; derates linearly to 16 A at 100 °C case |
Pinout & Package
SIHG125N60EF-GE3 is housed in TO-247AC package - a through-hole, high-voltage variant of JEDEC TO-247 with isolated drain tab, optimized for >500 V applications and high thermal conductivity via copper leadframe and exposed drain pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level drive; low input capacitance (1533 pF Ciss) minimizes Miller effect in high-dV/dt environments |
| 2 (Drain) | Main power output terminal | Connected to high-side switch node; electrically tied to metal tab for low-inductance heat path and high-voltage isolation |
| 3 (Source) | Power return reference | Serves as local ground for gate driver; low source inductance critical for minimizing shoot-through risk in half-bridge layouts |
| 4 (Drain) | Secondary drain connection | Redundant drain terminal for parallel mounting or enhanced current sharing; identical electrical potential to Pin 2 |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | 117 ns trr, 0.7 μC Qrr - enables synchronous rectification replacement in flyback/PFC without external Schottky |
| Low effective output capacitance | 54 pF Co(er) - reduces turn-off energy loss (Eoff) by ~30 % vs. standard 600 V MOSFETs with same RDS(on) |
| Avalanche energy rating | 88 mJ single-pulse UIS - eliminates need for external snubbers in inductive load switching (e.g., motor drives, welding inverters) |
| Lead (Pb)-free & halogen-free | RoHS-compliant per Vishay Doc. 99912 - meets IPC-J-STD-609A Class 1 material categorization for green manufacturing |
| High dv/dt immunity | 70 V/ns at TJ = 125 °C - suppresses false turn-on in high-frequency, high-side switching nodes without gate clamping |
Applications
| Server Power Supply PFC Stage | Telecom Rectifier Module |
|---|---|
|
Use Scenario: Active boost PFC front-end operating at 100–300 kHz with 400 V DC output bus. IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost converter; handles 25 A peak inductor current. Use Value: Low RDS(on) and Co(er) reduce total power loss by 1.8 W vs. legacy 600 V MOSFETs, improving efficiency from 96.2 % to 96.7 % at full load. |
Use Scenario: Isolated forward or LLC resonant DC/DC stage converting 380–400 V DC to 12 V/54 A for base station RF amplifiers. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch; operates with zero-voltage switching (ZVS) boundary. Use Value: Fast body diode enables reliable ZVS initiation down to 20 % load, eliminating dead-time optimization complexity and reducing EMI filter size. |
| Solar PV Inverter DC Link | Industrial Motor Drive Inverter |
|
Use Scenario: DC link switching in string inverters handling 600–1000 V DC input from photovoltaic arrays. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in three-phase inverter leg; driven with 15 V gate bias for low RDS(on) stability. Use Value: Avalanche rating supports fault ride-through during grid faults; 150 °C TJ rating permits operation in unventilated rooftop enclosures. |
Use Scenario: 3-phase inverter output stage for 7.5 kW servo drives with regenerative braking. IC Role / Device Role / Timing Role: Low-side freewheeling switch; conducts reverse current during PWM dead time and regenerative energy recapture. Use Value: Low VSD (1.2 V) and fast trr minimize conduction loss and voltage overshoot during diode commutation, reducing snubber component count by 40 %. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW12NK60Z | 600 V, 12 A, RDS(on) = 0.58 Ω, no UIS rating, TO-247 package | Lower current rating and no avalanche spec limit use to non-inductive loads or heavily snubbed circuits | Acceptable only in low-current (<10 A), low-stress PFC where cost outweighs ruggedness |
| IXFH12N60P | 600 V, 12 A, RDS(on) = 0.55 Ω, Qg = 32 nC, TO-247 package | Higher RDS(on) increases conduction loss 5×; lacks fast body diode (trr not specified) | Suitable for low-frequency (<50 kHz) hard-switched applications where diode speed is irrelevant |
Compared with STW12NK60Z and IXFH12N60P, SIHG125N60EF-GE3 delivers 2× higher current, 5× lower RDS(on), and guaranteed avalanche ruggedness - making it the only option among the three qualified for 25 A, 100 kHz+ PFC and ZVS inverter designs requiring body-diode commutation.
Availability
SIHG125N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.
Supply support for SIHG125N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The EF Series - including SIHG125N60EF-GE3 - was engineered specifically for high-efficiency, high-voltage switching in server, telecom, and renewable energy power conversion systems where low RDS(on) × Qg and fast body diode performance are critical.
FAQ
What is the maximum continuous drain current rating for SIHG125N60EF-GE3 at 100 °C case temperature?
The SIHG125N60EF-GE3 supports 16 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating from 25 A at 25 °C follows a linear 1.4 W/°C thermal slope, ensuring safe operation within its 179 W maximum power dissipation limit when properly heatsinked.
Does SIHG125N60EF-GE3 have a specified reverse recovery time for its body diode?
Yes, SIHG125N60EF-GE3 specifies a typical reverse recovery time (trr) of 117 ns under test conditions of TJ = 25 °C, IF = IS = 12 A, di/dt = 100 A/μs, and VR = 400 V. This value is confirmed in the "Drain-Source Body Diode Characteristics" section of the datasheet and enables reliable operation in ZVS topologies.
Is SIHG125N60EF-GE3 suitable for avalanche operation, and what is its rated energy?
Yes, SIHG125N60EF-GE3 is fully rated for repetitive unclamped inductive switching (UIS) with a single-pulse avalanche energy (EAS) of 88 mJ, tested per note b in the Absolute Maximum Ratings. This ruggedness allows safe operation during transient overloads without external protection circuitry in PFC and motor drive applications.
What is the gate-source threshold voltage range for SIHG125N60EF-GE3?
The gate-source threshold voltage (VGS(th)) for SIHG125N60EF-GE3 is specified from 3.0 V to 5.0 V at VDS = VGS and ID = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity against spurious gate excitation in high-dV/dt environments.
What package type does SIHG125N60EF-GE3 use, and how are its terminals assigned?
SIHG125N60EF-GE3 uses the TO-247AC package with four terminals: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (redundant). The metal tab is electrically connected to the drain, providing low-inductance thermal and electrical paths essential for high-power switching integrity.
SIHG125N60EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- EF
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 125mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 47 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1533 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 179W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
SIHG125N60EF-GE3 FAQ
1.How can I place an order for SIHG125N60EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHG125N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHG125N60EF-GE3 reliable?
The price and inventory of SIHG125N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG125N60EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHG125N60EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG125N60EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHG125N60EF-GE3?
SIHG125N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHG125N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHG125N60EF-GE3?
For technical support, including SIHG125N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG125N60EF-GE3 requirements.
6.How does Aetrix verify that SIHG125N60EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHG125N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG125N60EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHG125N60EF-GE3?
All SIHG125N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG125N60EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHG125N60EF-GE3 part is unused and in its original packaging.
Return procedure for SIHG125N60EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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