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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG14N50D-E3

Name: SIHG14N50D-E3
Brand: Vishay Siliconix
SKU: SIHG14N50D-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG14N50D-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG14N50D-E3.pdf

Description:: MOSFET N-CH 500V 14A TO247AC

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Product details

Overview

SIHG14N50D-E3 from Vishay Siliconix is a 500 V, 14 A N-channel power MOSFET in TO-247AC package, featuring R_DS(on) = 0.4 Ω (max) at V_GS = 10 V, Q_g = 58 nC (max), and avalanche-rated (E_AS = 56 mJ) for robust unclamped inductive switching-used in server SMPS primary-side switching stages.

For engineers reviewing the SIHG14N50D-E3 datasheet, SIHG14N50D-E3 pinout, SIHG14N50D-E3 application, or SIHG14N50D-E3 equivalent, this device is selected for high-voltage DC-DC conversion where low conduction loss, fast turn-off (t_f = 52 ns max), and body diode ruggedness are critical in hard-switched topologies.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage power conversion, with a fixed gate threshold voltage range of 3.0–5.0 V and low C_iss (1144 pF typ) to minimize drive losses. Its dV/dt immunity is rated at 24 V/ns (T_J = 125 °C), supporting stable operation in noisy high-dV/dt environments like LLC resonant converters.

The integrated body diode exhibits t_rr = 319 ns (typ), Q_rr = 3.0 μC, and V_SD = 1.2 V (T_J = 25 °C, I_S = 7 A), enabling moderate-frequency freewheeling in asymmetric half-bridge configurations without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for transient overvoltage
R_DS(on) max	0.4 Ω at V_GS = 10 V - enables ≤5.6 W conduction loss at 14 A continuous drain current
Q_g max	58 nC - determines gate drive power requirement and switching speed in 100–500 kHz SMPS
E_AS	56 mJ - guarantees single-pulse avalanche survivability during inductive load interruption
t_f max	52 ns - reduces turn-off energy loss and EMI generation in hard-switched PFC and LLC stages
R_thJC	0.6 °C/W - allows ≥170 W power dissipation with 100 °C case temperature rise under heatsink cooling
I_D cont @ T_C = 100 °C	9 A - defines usable current derating in thermally constrained industrial power supplies

Pinout & Package

TO-247AC package with isolated drain tab (pins 2 and 4 both connected to drain), standard 3-lead configuration, and thermal pad optimized for mechanical mounting and heat transfer to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 10 V logic-level gate drive; requires ≤58 nC charge for full enhancement
2 (Drain)	Main high-side current path	Electrically tied to metal tab; must be isolated from heatsink unless using insulating pad
3 (Source)	Reference node for gate drive and current sensing	Common return for gate driver ground and shunt resistor; defines local 0 V reference
4 (Drain)	Secondary drain connection	Redundant drain terminal for improved current sharing and reduced package inductance in high-di/dt layouts

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	23.2 Ω·nC - balances conduction and switching losses for optimal efficiency at 200–300 kHz
Avalanche energy rating (E_AS)	56 mJ - eliminates need for external snubbers in flyback or forward converter primary switches
High body diode ruggedness	Rated for repetitive I_SD = 14 A and pulsed I_SM = 56 A - supports synchronous rectification in asymmetrical topologies
Fast reverse recovery (t_rr)	319 ns - minimizes cross-conduction loss when used as freewheeling switch in half-bridge configurations
Low C_oss (100 pF typ)	Reduces turn-off loss and improves zero-voltage switching (ZVS) margin in resonant converters

Applications

Server SMPS Primary Switch	Industrial Welding Inverter
Use Scenario: High-efficiency 80 PLUS Titanium AC-DC front-end operating at 200–300 kHz with 380–400 V DC bus. IC Role / Device Role / Timing Role: Main switching transistor in active-clamp forward or LLC resonant converter primary leg. Use Value: 0.4 Ω R_DS(on) limits conduction loss to <5.6 W at 14 A, while 52 ns t_f ensures minimal turn-off loss at high frequency.	Use Scenario: 15–30 kW IGBT gate-drive auxiliary supply and inverter half-bridge switching in arc welding equipment. IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge DC-DC stage feeding IGBT gate drivers and control circuitry. Use Value: 500 V rating accommodates 400 V bus with safety margin; E_AS = 56 mJ withstands inductive kickback during rapid current interruption.
Plasma Display Power Supply	Battery Charger DC-DC Stage
Use Scenario: Sustaining and addressing power supply for plasma display panels requiring regulated 200–300 V outputs. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology delivering >500 W output. Use Value: Low C_iss (1144 pF) and fast t_d(off) (58 ns max) enable precise dead-time control and ZVS across wide load range.	Use Scenario: Isolated DC-DC stage in 3–6 kW EV on-board charger converting 400 V battery to 12/48 V auxiliary rail. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side switch in dual-active-bridge topology. Use Value: Body diode V_SD = 1.2 V and t_rr = 319 ns reduce freewheeling loss and improve efficiency vs. discrete Schottky solutions.

Server SMPS Primary Switch

Industrial Welding Inverter

Use Scenario: High-efficiency 80 PLUS Titanium AC-DC front-end operating at 200–300 kHz with 380–400 V DC bus.

IC Role / Device Role / Timing Role: Main switching transistor in active-clamp forward or LLC resonant converter primary leg.

Use Value: 0.4 Ω R_DS(on) limits conduction loss to <5.6 W at 14 A, while 52 ns t_f ensures minimal turn-off loss at high frequency.

Use Scenario: 15–30 kW IGBT gate-drive auxiliary supply and inverter half-bridge switching in arc welding equipment.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge DC-DC stage feeding IGBT gate drivers and control circuitry.

Use Value: 500 V rating accommodates 400 V bus with safety margin; E_AS = 56 mJ withstands inductive kickback during rapid current interruption.

Plasma Display Power Supply

Battery Charger DC-DC Stage

Use Scenario: Sustaining and addressing power supply for plasma display panels requiring regulated 200–300 V outputs.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology delivering >500 W output.

Use Value: Low C_iss (1144 pF) and fast t_d(off) (58 ns max) enable precise dead-time control and ZVS across wide load range.

Use Scenario: Isolated DC-DC stage in 3–6 kW EV on-board charger converting 400 V battery to 12/48 V auxiliary rail.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side switch in dual-active-bridge topology.

Use Value: Body diode V_SD = 1.2 V and t_rr = 319 ns reduce freewheeling loss and improve efficiency vs. discrete Schottky solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK50ZFP	500 V, 14 A, R_DS(on) = 0.42 Ω, Q_g = 65 nC, TO-220FP package	Lower thermal performance (R_thJC ≈ 1.2 °C/W) and no redundant drain pin	Preferred only for space-constrained, lower-power (<300 W) designs where TO-220 footprint is mandatory
IXFH14N50P	500 V, 14 A, R_DS(on) = 0.4 Ω, Q_g = 52 nC, TO-247 package, no E_AS rating	Lower gate charge but lacks avalanche energy specification and body diode ruggedness data	Selected when strict avalanche testing is not required and gate drive power minimization is prioritized

Compared with STP14NK50ZFP and IXFH14N50P, SIHG14N50D-E3 delivers superior thermal resistance (0.6 °C/W), dual-drain layout for reduced parasitic inductance, and certified avalanche capability-making it the preferred choice for mission-critical 400 V bus power conversion where reliability under fault conditions is non-negotiable.

Availability

SIHG14N50D-E3 is available at Aetrix Electronics and suitable for server SMPS, industrial welding inverters, and plasma display power supplies requiring stable component supply and long-term production continuity.

Supply support for SIHG14N50D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The D Series power MOSFETs-including SIHG14N50D-E3-are engineered for high-voltage, high-efficiency switching in industrial and telecom power systems, emphasizing avalanche ruggedness, low FOM, and thermal robustness.

FAQ

What is the maximum continuous drain current rating for SIHG14N50D-E3 at 100 °C case temperature?

The SIHG14N50D-E3 has a continuous drain current rating of 9 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and ensures safe operation within its 208 W maximum power dissipation limit when properly heatsinked.

Does SIHG14N50D-E3 support avalanche operation, and what is its rated single-pulse energy?

Yes, SIHG14N50D-E3 is avalanche energy rated with E_AS = 56 mJ (single pulse, test condition: V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, I_AS = 7 A). This rating is validated per JEDEC JESD24-1 and confirms robustness against inductive switching faults without external protection.

What is the gate threshold voltage range for SIHG14N50D-E3, and how does it affect drive circuit design?

The SIHG14N50D-E3 has a gate threshold voltage V_GS(th) of 3.0–5.0 V (T_J = 25 °C, I_D = 250 μA). This range necessitates a minimum 10 V gate drive for full enhancement and low R_DS(on), ruling out 5 V logic-level drivers and requiring dedicated gate driver ICs or level-shifted supplies.

How is the TO-247AC package of SIHG14N50D-E3 configured electrically, and what is the purpose of Pin 4?

The SIHG14N50D-E3 uses a 4-terminal TO-247AC package where Pins 2 and 4 are both internally connected to the drain. Pin 4 provides a second drain connection to reduce package inductance and improve current sharing in high-di/dt applications-critical for minimizing voltage overshoot during fast switching in SMPS primary circuits.

What are the key body diode characteristics of SIHG14N50D-E3 relevant to synchronous rectification?

The SIHG14N50D-E3 body diode has V_SD = 1.2 V (T_J = 25 °C, I_S = 7 A), t_rr = 319 ns, and Q_rr = 3.0 μC. These values support moderate-frequency freewheeling in half-bridge and active-clamp topologies, though external Schottky diodes may still be preferred for <100 ns recovery requirements.

SIHG14N50D-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1144 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG14N50D-E3 FAQ

1.How can I place an order for SIHG14N50D-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG14N50D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG14N50D-E3 reliable?

The price and inventory of SIHG14N50D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG14N50D-E3 is usually 5 days.

3.What payment methods are accepted for SIHG14N50D-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG14N50D-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG14N50D-E3?

SIHG14N50D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG14N50D-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG14N50D-E3?

For technical support, including SIHG14N50D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG14N50D-E3 requirements.

6.How does Aetrix verify that SIHG14N50D-E3 is sourced from the original manufacturer or authorized distributors?

All SIHG14N50D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG14N50D-E3 meets industry standards.

7.What is the process for return or replacement of SIHG14N50D-E3?

All SIHG14N50D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG14N50D-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG14N50D-E3 part is unused and in its original packaging.

Return procedure for SIHG14N50D-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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