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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG14N50D-GE3

Name: SIHG14N50D-GE3
Brand: Vishay Siliconix
SKU: SIHG14N50D-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG14N50D-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG14N50D-GE3.pdf

Description:: MOSFET N-CH 500V 14A TO247AC

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Product details

Overview

SIHG14N50D-GE3 from Vishay Siliconix is a 500 V, 14 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.4 Ω @ V_GS = 10 V, Q_g = 58 nC, and avalanche-rated (E_AS = 56 mJ). It serves as a high-voltage switching device in offline SMPS, motor drives, and induction heating circuits.

For engineers reviewing the SIHG14N50D-GE3 datasheet, SIHG14N50D-GE3 pinout, SIHG14N50D-GE3 application, or SIHG14N50D-GE3 equivalent, this page delivers verified electrical specs, thermal resistance (R_thJC = 0.6 °C/W), body diode recovery (t_rr = 319 ns), gate charge profile, and real-world replacement guidance for industrial power conversion designs.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage hard-switching applications. Its low C_iss (1144 pF) and minimized Q_gd/Q_g ratio (14/58 nC) reduce capacitive losses and improve voltage-dependent switching efficiency under 400 V bus conditions.

The integrated body diode is rated for repetitive I_S = 14 A and exhibits controlled reverse recovery (Q_rr = 3.0 μC, I_RRM = 18 A), enabling reliable operation in freewheeling and synchronous rectification roles without external snubbing in medium-frequency (<100 kHz) topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus with 25 % margin for transient overvoltage in offline converters
R_DS(on) max	0.4 Ω @ V_GS = 10 V - enables ≤ 40 W conduction loss at 10 A continuous drain current
Q_g max	58 nC - determines gate drive power requirement and switching speed in 50–100 kHz hard-switched PFC or LLC stages
E_AS	56 mJ - guarantees single-pulse unclamped inductive switching survivability in motor drive fault conditions
t_rr	319 ns - defines minimum dead-time setting to prevent shoot-through when used in half-bridge configurations
R_thJC	0.6 °C/W - allows direct heatsink mounting for ≥ 150 W power dissipation with <100 °C junction rise at 25 °C ambient
I_D cont @ T_C = 100 °C	9 A - sets practical current limit for thermally constrained PCB-mounted heatsink designs

Pinout & Package

TO-247AC package with isolated drain tab (pins 2 and 4 both connected to drain), standard 3-pin layout, and thermal pad optimized for mechanical stability and heat transfer to external heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 10 V logic-level gate drive; requires ≤ 58 nC total charge for full enhancement
2 (Drain)	High-side power node	Electrically tied to metal tab; must be insulated from heatsink unless system ground-referenced
3 (Source)	Power return / reference	Serves as local ground for gate driver; carries full load current and body diode reverse recovery charge
4 (Drain)	Redundant drain connection	Parallel path to Pin 2; improves current sharing and reduces package inductance in high-di/dt switching

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	23.2 Ω·nC - balances conduction and switching losses for optimal efficiency in 50–100 kHz SMPS
Avalanche energy rating	56 mJ single-pulse - eliminates need for external clamping in inductive load interruption
Body diode ruggedness	Rated for I_SD ≤ I_D, t_p limited by T_J - supports bidirectional current in resonant converters without derating
Lead (Pb)-free & halogen-free	Complies with JEDEC J-STD-609A Class 2a and RoHS Directive 2011/65/EU - suitable for green industrial end equipment
High dV/dt immunity	24 V/ns @ T_J = 125 °C - suppresses false turn-on in high-noise bridge-leg environments

Applications

Server & Telecom SMPS	Induction Heating Inverter
Use Scenario: Primary-side switch in 1–3 kW telecom rectifier with 380–400 V DC bus and 70–100 kHz operation. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary; operates in hard-switched forward or LLC topology. Use Value: 0.4 Ω R_DS(on) limits conduction loss to <3.5 W at 9 A, while 58 nC Q_g enables clean 100 ns turn-off with standard 1 W gate driver.	Use Scenario: Half-bridge upper/lower switch in 2–5 kW domestic induction cooktop operating at 20–50 kHz. IC Role / Device Role / Timing Role: Fast-switching power transistor handling pulsed 15–25 A peak currents with body diode conducting freewheeling current during dead time. Use Value: 319 ns t_rr and 3.0 μC Q_rr allow precise dead-time control (≥ 400 ns), minimizing cross-conduction and EMI generation.
Industrial Motor Drive	Battery Charger Output Stage
Use Scenario: Inverter leg switch in 3–7.5 HP variable-frequency drive powering 3-phase AC induction motors. IC Role / Device Role / Timing Role: Main switching element in 6-pack IGBT/MOSFET inverter; subjected to repetitive UIS events during motor stall or short-circuit faults. Use Value: 56 mJ E_AS rating ensures robustness against 100+ μs inductive fault pulses without degradation or failure.	Use Scenario: Secondary-side synchronous rectifier or primary-side switch in 1–2 kW EV on-board charger with dual-stage PFC + LLC architecture. IC Role / Device Role / Timing Role: High-efficiency switching device in high-frequency LLC resonant tank or active clamp forward stage. Use Value: Low C_iss (1144 pF) and C_oss (100 pF) minimize capacitive losses at 200–500 kHz, improving overall system efficiency by ≥ 0.8 %.

Server & Telecom SMPS

Induction Heating Inverter

Use Scenario: Primary-side switch in 1–3 kW telecom rectifier with 380–400 V DC bus and 70–100 kHz operation.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary; operates in hard-switched forward or LLC topology.

Use Value: 0.4 Ω R_DS(on) limits conduction loss to <3.5 W at 9 A, while 58 nC Q_g enables clean 100 ns turn-off with standard 1 W gate driver.

Use Scenario: Half-bridge upper/lower switch in 2–5 kW domestic induction cooktop operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Fast-switching power transistor handling pulsed 15–25 A peak currents with body diode conducting freewheeling current during dead time.

Use Value: 319 ns t_rr and 3.0 μC Q_rr allow precise dead-time control (≥ 400 ns), minimizing cross-conduction and EMI generation.

Industrial Motor Drive

Battery Charger Output Stage

Use Scenario: Inverter leg switch in 3–7.5 HP variable-frequency drive powering 3-phase AC induction motors.

IC Role / Device Role / Timing Role: Main switching element in 6-pack IGBT/MOSFET inverter; subjected to repetitive UIS events during motor stall or short-circuit faults.

Use Value: 56 mJ E_AS rating ensures robustness against 100+ μs inductive fault pulses without degradation or failure.

Use Scenario: Secondary-side synchronous rectifier or primary-side switch in 1–2 kW EV on-board charger with dual-stage PFC + LLC architecture.

IC Role / Device Role / Timing Role: High-efficiency switching device in high-frequency LLC resonant tank or active clamp forward stage.

Use Value: Low C_iss (1144 pF) and C_oss (100 pF) minimize capacitive losses at 200–500 kHz, improving overall system efficiency by ≥ 0.8 %.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK50ZFP	500 V, 14 A, R_DS(on) = 0.42 Ω, Q_g = 65 nC, TO-220FP package	Lower power dissipation rating (100 W vs. 208 W); no redundant drain pin	Preferred for space-constrained, lower-power (<1 kW) designs where heatsink interface is less critical
IXTH14N50L	500 V, 14 A, R_DS(on) = 0.38 Ω, Q_g = 62 nC, TO-247 package, logic-level gate (V_GS(th) = 2.5–4.5 V)	Lower threshold voltage enables direct microcontroller drive; slightly higher Q_g	Selected when gate drive voltage is limited to 5 V or when simplified drive circuitry is prioritized over minimal Q_g

Compared with STP14NK50ZFP and IXTH14N50L, SIHG14N50D-GE3 offers superior thermal performance (R_thJC = 0.6 °C/W), redundant drain terminals for lower package inductance, and tighter Q_g/Q_gd ratio-making it optimal for high-reliability, high-power (>1.5 kW), and high-di/dt industrial inverters.

Availability

SIHG14N50D-GE3 is available at Aetrix Electronics and suitable for server power supplies, induction heating systems, and industrial motor drives requiring stable component supply and long-term manufacturing continuity.

Supply support for SIHG14N50D-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The D Series Power MOSFETs-including SIHG14N50D-GE3-are engineered for high-voltage, high-current switching in industrial, telecom, and consumer power conversion, emphasizing avalanche ruggedness, low FOM, and thermal reliability.

FAQ

What is the maximum continuous drain current for SIHG14N50D-GE3 at 100 °C case temperature?

The SIHG14N50D-GE3 supports 9 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual heatsink performance and ambient conditions in the final design. The SIHG14N50D-GE3 maintains safe operation up to T_J = 150 °C under this condition.

Does SIHG14N50D-GE3 have avalanche capability, and how is it rated?

Yes, the SIHG14N50D-GE3 is fully rated for single-pulse unclamped inductive switching (UIS) with E_AS = 56 mJ at T_J = 25 °C. This rating is measured per JEDEC standard JESD24-1 using L = 2.3 mH, R_g = 25 Ω, and I_AS = 7 A. The SIHG14N50D-GE3 does not specify repetitive avalanche energy, so system protection must ensure fault duration remains within single-pulse limits.

What is the gate threshold voltage range for SIHG14N50D-GE3, and how does it affect drive requirements?

The SIHG14N50D-GE3 has a gate-source threshold voltage V_GS(th) of 3.0–5.0 V at T_J = 25 °C, confirming it is a standard-level MOSFET requiring ≥10 V gate drive for full enhancement. This means the SIHG14N50D-GE3 is not logic-level compatible and must be driven with a dedicated gate driver capable of delivering ≥10 V with sufficient peak current to charge 58 nC within required switching times.

How does the body diode performance of SIHG14N50D-GE3 compare to typical fast recovery diodes?

The SIHG14N50D-GE3 body diode features t_rr = 319 ns, Q_rr = 3.0 μC, and V_SD = 1.2 V at I_S = 7 A and T_J = 25 °C-performance comparable to discrete ultrafast recovery diodes in the same voltage class. Unlike discrete diodes, however, the SIHG14N50D-GE3 body diode shares thermal mass with the MOSFET die, enabling coordinated thermal management but requiring careful dead-time tuning to avoid cross-conduction.

Is SIHG14N50D-GE3 compatible with lead-free reflow soldering processes?

Yes, the SIHG14N50D-GE3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, as stated in its Absolute Maximum Ratings. Its TO-247AC package meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements, and the "-GE3" suffix explicitly denotes lead (Pb)-free and halogen-free construction compliant with RoHS Directive 2011/65/EU.

SIHG14N50D-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1144 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG14N50D-GE3 FAQ

1.How can I place an order for SIHG14N50D-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG14N50D-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG14N50D-GE3 reliable?

The price and inventory of SIHG14N50D-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG14N50D-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG14N50D-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG14N50D-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG14N50D-GE3?

SIHG14N50D-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG14N50D-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG14N50D-GE3?

For technical support, including SIHG14N50D-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG14N50D-GE3 requirements.

6.How does Aetrix verify that SIHG14N50D-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG14N50D-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG14N50D-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG14N50D-GE3?

All SIHG14N50D-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG14N50D-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG14N50D-GE3 part is unused and in its original packaging.

Return procedure for SIHG14N50D-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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