Vishay Siliconix SIHG150N60E-GE3

Overview

SIHG150N60E from Vishay Siliconix is a 600 V, 22 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.137 Ω (typ. at V_GS = 10 V), Q_g = 24 nC (typ.), and avalanche-rated (E_AS = 111 mJ). It serves as a high-voltage switching element in primary-side SMPS, PFC stages, and solar inverters where low conduction loss and robust unclamped inductive switching are required.

For engineers reviewing the SIHG150N60E datasheet, SIHG150N60E pinout, SIHG150N60E application, or SIHG150N60E equivalent, key selection criteria include its 600 V V_DS rating, 0.137 Ω R_DS(on) at 10 V gate drive, 24 nC total gate charge, TO-247AC thermal performance (R_thJC = 0.7 °C/W), and body diode recovery characteristics (t_rr = 291 ns typ., Q_rr = 3.5 μC).

Technical Context

This MOSFET employs Vishay's 4th-generation E series technology optimized for high-voltage hard-switching applications. Its low figure-of-merit (R_DS(on) × Q_g) and reduced effective output capacitance (C_o(er) = 58 pF) directly lower both conduction and switching losses in continuous conduction mode (CCM) PFC and resonant LLC topologies.

The device integrates an avalanche-energy-rated body diode with t_rr = 291 ns (typ.) and Q_rr = 3.5 μC at T_J = 25 °C, enabling reliable operation in circuits with inductive turn-off stress. Its V_GS(th) of 3.0–5.0 V ensures stable gate control under wide temperature and supply variations without requiring logic-level drive.

Key Specifications

Pinout & Package

SIHG150N60E is housed in a TO-247AC package with isolated drain tab, rated for high-voltage isolation and optimized thermal transfer to heatsinks. The package features three leads: Gate (pin 1), Drain (pins 2 and 4), and Source (pin 3), with pins 2 and 4 electrically connected internally to the drain metallization.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STW15NK60Z and IXFH16N60P, SIHG150N60E delivers superior power density via its 0.137 Ω R_DS(on), 24 nC Q_g, and 111 mJ EAS rating-enabling smaller heatsinks, higher switching frequencies, and elimination of external protection components in mission-critical 2–5 kW industrial and renewable energy systems.

Availability

SIHG150N60E is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up and field service replacement.

Supply support for SIHG150N60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and ruggedized packaging.

The E Series power MOSFET product line targets high-efficiency, high-voltage switching applications-including PFC, server/telecom PSUs, and industrial inverters-where low R_DS(on) × Q_g, avalanche robustness, and fast body diode recovery are essential design requirements.

FAQ

What is the maximum continuous drain current rating for SIHG150N60E at 100 °C case temperature?

The SIHG150N60E has a continuous drain current rating of 14 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to junction-to-case resistance (R_thJC = 0.7 °C/W) and must be validated against actual board layout, heatsink interface, and ambient airflow. At T_C = 25 °C, the rating increases to 22 A.

Does SIHG150N60E support gate drive voltages below 10 V?

Yes, SIHG150N60E has a gate threshold voltage (V_GS(th)) range of 3.0–5.0 V, allowing functional turn-on with gate drives as low as 5 V. However, full enhancement and minimum R_DS(on) (0.137 Ω) are only guaranteed at V_GS = 10 V per the datasheet test conditions. Operating at 5–8 V increases R_DS(on) significantly and should be verified with thermal modeling.

Is SIHG150N60E suitable for use in synchronous rectification topologies?

No, SIHG150N60E is not optimized for synchronous rectification. Its body diode exhibits t_rr = 291 ns and Q_rr = 3.5 μC-adequate for freewheeling in hard-switched converters but too slow and lossy for high-frequency SR applications where ultra-fast, low-Q_rr diodes (e.g., SiC Schottky) are preferred. Use dedicated SR controllers with logic-level MOSFETs instead.

What is the thermal resistance from junction to case (R_thJC) for SIHG150N60E?

The maximum junction-to-case thermal resistance (R_thJC) for SIHG150N60E is 0.7 °C/W, measured from junction to the drain tab (pin 2/4). This value is critical for heatsink sizing and must be applied with proper thermal interface material and mounting pressure. The typical R_thJC is lower but not specified; design calculations should use the max value for worst-case thermal analysis.

Can SIHG150N60E replace older Vishay 600 V MOSFETs like SIHP15N60E in existing designs?

Yes, SIHG150N60E is a direct drop-in replacement for SIHP15N60E in most cases: same TO-247AC package, identical pinout (G-D-S-D), and improved specs (lower R_DS(on), lower Q_g, higher E_AS). No PCB changes are required, but gate drive strength and layout parasitics should be re-verified due to faster switching edges enabled by reduced Q_g and C_iss.