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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG155N60EF-GE3

Name: SIHG155N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHG155N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG155N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG155N60EF-GE3.pdf

Description:: EF SERIES POWER MOSFET WITH FAST

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Product details

Overview

SIHG155N60EF from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 0.137 Ω R_DS(on) at V_GS = 10 V, 38 nC total gate charge, and fast body diode with 95 ns reverse recovery time. It delivers low conduction and switching losses for high-efficiency hard-switched PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHG155N60EF datasheet, SIHG155N60EF pinout, SIHG155N60EF application, or SIHG155N60EF equivalent, key selection criteria include its 600 V V_DS rating, avalanche-rated 111 mJ E_AS, 0.7 °C/W R_thJC, and optimized Co(er) of 61 pF for reduced switching loss in high-frequency converters.

Technical Context

This EF-series MOSFET employs Vishay's 4th-generation E-series silicon technology to achieve low figure-of-merit (R_DS(on) × Q_g = 5.2 nΩ·F), enabling high-power density in continuous conduction mode (CCM) PFC and resonant LLC topologies. Its fast intrinsic body diode supports ZVS operation and reduces dead-time losses.

The device integrates an avalanche-energy-rated structure (E_AS = 111 mJ) and exhibits controlled dv/dt capability (100 V/ns at T_J = 125 °C), supporting robust operation under transient overvoltage and inductive switching stress without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in 380–400 V nominal PFC outputs with margin.
R_DS(on) typ.	0.137 Ω at V_GS = 10 V, I_D = 10 A - Enables <1.4 W conduction loss at 21 A, reducing heatsink requirements.
Q_g max.	38 nC - Low gate drive energy supports efficient 100–300 kHz switching with standard gate drivers.
E_AS	111 mJ - Rated single-pulse avalanche energy allows reliable operation during load dump or short-circuit events.
t_rr	95 ns typical - Fast body diode recovery minimizes commutation loss and ringing in bridge-leg configurations.
R_thJC	0.7 °C/W - Enables high-power dissipation (179 W) with minimal junction-to-case thermal rise under forced-air cooling.
I_D cont.	21 A at T_C = 25 °C - Supports >1 kW output in 600 V-class power stages with appropriate thermal design.

Pinout & Package

SIHG155N60EF is housed in a TO-247AC package with isolated drain tab, rated for high-voltage isolation and high-current handling. The case serves as the drain terminal, and the package features a standardized 3-pin layout compatible with industry-standard heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 10 V logic-level gate drive; requires <38 nC charge for full enhancement; low 0.9 Ω gate resistance aids drive stability.
2 (Drain)	High-side power node	Connected to internal die drain and exposed metal tab; electrically tied to heatsink; carries full load current and withstands 600 V potential.
3 (Source)	Power return / reference	Serves as source terminal and signal ground reference for gate driver; low-inductance connection critical for minimizing switching overshoot.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	5.2 nΩ·F - Reduces combined conduction and switching loss, improving efficiency in 100–200 kHz PFC designs.
Fast body diode (t_rr = 95 ns)	Enables ZVS in half-bridge and LLC topologies without external diodes, lowering system BOM count and footprint.
Avalanche energy rating (E_AS = 111 mJ)	Guarantees ruggedness under unclamped inductive switching, eliminating need for external clamping circuits in motor drives and welders.
Low effective output capacitance (C_o(er) = 61 pF)	Minimizes stored energy loss during turn-on, directly improving light-load efficiency in resonant converters.
TO-247AC thermal performance (R_thJC = 0.7 °C/W)	Supports 179 W continuous dissipation with standard heatsinking, enabling compact 1–2 kW power supply designs.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Active clamp forward or CCM boost PFC stage in 1U/2U 1.5 kW AC-DC front-end modules. IC Role / Device Role / Timing Role: Main switch in high-voltage boost leg, operating at 100–150 kHz with 10 V gate drive. Use Value: 0.137 Ω R_DS(on) and 38 nC Q_g reduce total losses by ~12% vs. legacy 650 V MOSFETs, enabling 96%+ efficiency at full load.	Use Scenario: Primary-side switch in 48 V output telecom rectifiers with hold-up time >20 ms. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology, handling 21 A peak primary current. Use Value: 111 mJ E_AS and 100 V/ns dv/dt rating ensure reliability during line surges and output short-circuit transients.
PV Inverter DC-DC Stage	Industrial Motor Drive
Use Scenario: Isolated DC-DC converter feeding control circuitry in string inverters with 1000 V DC input. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side switch in flyback or active-clamp forward. Use Value: Fast 95 ns t_rr and low Q_rr (0.5–1.0 μC) suppress body diode conduction loss and EMI during zero-crossing transitions.	Use Scenario: Inverter leg switch in 3–5 kW variable frequency drives for HVAC and pumps. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 6–16 kHz PWM inverters driving induction motors. Use Value: 600 V rating and 21 A continuous current support direct replacement of 600 V IGBTs while reducing gate drive complexity and switching loss.

Server Power Supply

Telecom Rectifier

Use Scenario: Active clamp forward or CCM boost PFC stage in 1U/2U 1.5 kW AC-DC front-end modules.

IC Role / Device Role / Timing Role: Main switch in high-voltage boost leg, operating at 100–150 kHz with 10 V gate drive.

Use Value: 0.137 Ω R_DS(on) and 38 nC Q_g reduce total losses by ~12% vs. legacy 650 V MOSFETs, enabling 96%+ efficiency at full load.

Use Scenario: Primary-side switch in 48 V output telecom rectifiers with hold-up time >20 ms.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology, handling 21 A peak primary current.

Use Value: 111 mJ E_AS and 100 V/ns dv/dt rating ensure reliability during line surges and output short-circuit transients.

PV Inverter DC-DC Stage

Industrial Motor Drive

Use Scenario: Isolated DC-DC converter feeding control circuitry in string inverters with 1000 V DC input.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side switch in flyback or active-clamp forward.

Use Value: Fast 95 ns t_rr and low Q_rr (0.5–1.0 μC) suppress body diode conduction loss and EMI during zero-crossing transitions.

Use Scenario: Inverter leg switch in 3–5 kW variable frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 6–16 kHz PWM inverters driving induction motors.

Use Value: 600 V rating and 21 A continuous current support direct replacement of 600 V IGBTs while reducing gate drive complexity and switching loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20N60DM6	600 V, 20 A, R_DS(on) = 0.18 Ω, Q_g = 32 nC, no specified E_AS rating	Lacks avalanche rating; higher R_DS(on) increases conduction loss by ~30% at 15 A	Prefer SIHG155N60EF where ruggedness under fault conditions or lower conduction loss is required.
IXFH20N60X3	600 V, 20 A, R_DS(on) = 0.17 Ω, Q_g = 42 nC, E_AS = 100 mJ	Higher Q_g increases gate drive loss; slightly lower E_AS margin	SIHG155N60EF offers better FOM and thermal resistance (0.7 vs. 0.85 °C/W), favoring high-power-density designs.

Compared with STW20N60DM6 and IXFH20N60X3, SIHG155N60EF provides the lowest R_DS(on) × Q_g FOM and highest thermal conductivity, making it optimal for space-constrained, high-efficiency 600 V power stages requiring both low loss and fault tolerance.

Availability

SIHG155N60EF is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and PV inverter DC-DC stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHG155N60EF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The EF Series power MOSFETs, including SIHG155N60EF, are engineered for high-efficiency, high-reliability switching in 600 V hard-switched and resonant power conversion systems.

FAQ

What is the maximum continuous drain current for SIHG155N60EF at 100 °C case temperature?

The SIHG155N60EF supports 14 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-247AC package and ensures safe operation within its 179 W maximum power dissipation envelope when properly heatsinked.

Does SIHG155N60EF have a fully rated avalanche capability?

Yes, SIHG155N60EF is fully rated for unclamped inductive switching with a single-pulse avalanche energy (E_AS) of 111 mJ, tested per JEDEC standard JESD24-1. This rating applies under defined conditions: V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.8 A.

What is the gate threshold voltage range for SIHG155N60EF?

The gate-source threshold voltage (V_GS(th)) for SIHG155N60EF is specified from 3.0 V to 5.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity in noisy power environments.

Can SIHG155N60EF be used in place of older 650 V MOSFETs like SIHG15N60AE?

SIHG155N60EF is not a direct replacement for SIHG15N60AE due to differing voltage ratings (600 V vs. 650 V) and electrical characteristics. While both are TO-247AC packaged N-channel MOSFETs, SIHG155N60EF offers lower R_DS(on) and improved FOM but requires verification against system voltage margins and gate drive compatibility before substitution.

What is the reverse recovery charge (Q_rr) of the body diode in SIHG155N60EF?

The reverse recovery charge (Q_rr) of the integral body diode in SIHG155N60EF is specified from 0.5 μC to 1.0 μC at T_J = 25 °C, I_F = I_S = 10 A, di/dt = 100 A/μs, and V_R = 400 V. This low Q_rr contributes to reduced switching loss in synchronous rectification and bridge-leg applications.

SIHG155N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 149mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1465 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG155N60EF-GE3 FAQ

1.How can I place an order for SIHG155N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG155N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG155N60EF-GE3 reliable?

The price and inventory of SIHG155N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG155N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG155N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG155N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG155N60EF-GE3?

SIHG155N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG155N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG155N60EF-GE3?

For technical support, including SIHG155N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG155N60EF-GE3 requirements.

6.How does Aetrix verify that SIHG155N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG155N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG155N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG155N60EF-GE3?

All SIHG155N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG155N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG155N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHG155N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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