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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG15N60E-GE3

Name: SIHG15N60E-GE3
Brand: Vishay Siliconix
SKU: SIHG15N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG15N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG15N60E-GE3.pdf

Description:: MOSFET N-CH 600V 15A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHG15N60E-GE3 from Vishay Siliconix is a 600 V, 15 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.28 Ω (max) at V_GS = 10 V, Q_g = 78 nC (max), and avalanche-rated (E_AS = 102 mJ). It delivers low conduction and switching losses for high-efficiency power conversion in telecom and industrial SMPS.

For engineers reviewing the SIHG15N60E-GE3 datasheet, SIHG15N60E-GE3 pinout, SIHG15N60E-GE3 application, or SIHG15N60E-GE3 equivalent, key selection criteria include its 600 V blocking voltage, 15 A continuous drain current at T_C = 25 °C, ultra-low gate charge, body diode recovery characteristics (t_rr = 604 ns max), and TO-247AC thermal performance (R_thJC = 0.7 °C/W).

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage hard-switching applications. Its low C_iss (1350 pF typ) and minimized Q_gd/Q_g ratio (17/78 nC) reduce Miller effect and improve turn-off controllability under high dV/dt conditions up to 70 V/ns.

The integrated body diode is rated for 15 A continuous source-drain current with V_SD = 1.2 V (max) at I_S = 8 A and exhibits controlled reverse recovery (Q_rr = 8 μC max, t_rr = 604 ns max), enabling reliable operation in PFC and bridge-leg topologies without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports primary-side switching in 400 V DC bus systems with 50 V margin for voltage spikes.
R_DS(on) max	0.28 Ω at V_GS = 10 V - Enables <1.8 W conduction loss at 8 A, critical for thermally constrained 1–3 kW supplies.
Q_g max	78 nC - Reduces gate driver power demand and enables use of lower-cost 1–2 A peak drivers in high-frequency (>100 kHz) designs.
E_AS	102 mJ - Withstands unclamped inductive switching events common in motor drives and welders without failure.
t_rr max	604 ns - Limits diode reverse recovery stress on synchronous rectifiers and adjacent switches in half-bridge configurations.
R_thJC	0.7 °C/W - Allows >150 W power dissipation with modest heatsinking (e.g., 20 °C/W sink yields T_J ≈ 115 °C at 180 W).
I_D cont.	15 A at T_C = 25 °C - Sustains full load in server PSU front-end stages with conservative thermal derating.

Pinout & Package

SIHG15N60E-GE3 uses the industry-standard TO-247AC package (JEDEC outline), featuring isolated tab (Drain-connected), high-current leads, and optimized thermal path via copper leadframe. Package dimensions comply with Vishay's Document 91360 (Version 1, Facility Code = 9).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level drive; requires <78 nC charge for full enhancement; sensitive to ESD (±30 V rating).
2 (Drain)	Main power output / high-side switch node	Connected to internal die backside; electrically tied to metal tab-must be insulated from heatsink unless referenced to system ground.
3 (Source)	Power return / reference node	Serves as common return for gate drive and load current; low-inductance layout essential to minimize V_GS ringing during fast switching.
4 (Drain)	Redundant Drain connection	Second Drain lead improves current sharing and reduces package inductance in high-di/dt applications (e.g., PFC boost stages).

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	21.8 Ω·nC - Directly correlates with reduced total switching + conduction loss in hard-switched converters.
Avalanche energy rating (E_AS)	102 mJ - Eliminates need for external clamping circuits in inductive load switching and fault-tolerant designs.
Ultra-low Q_gd/Q_g ratio	22 % (17/78 nC) - Minimizes Miller plateau duration, improving noise immunity and enabling faster, more predictable turn-off.
Controlled body diode recovery	Q_rr = 8 μC max, t_rr = 604 ns max - Reduces cross-conduction risk and EMI in bridge configurations without requiring external diodes.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Material Declaration 99912 - Suitable for green manufacturing and export compliance.

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 48 V input, 12 V/54 A output LLC resonant converters for AI server racks. IC Role / Device Role / Timing Role: High-side main switch handling 600 V DC link with 100–300 kHz switching frequency and 15 A peak current. Use Value: Low Q_g and R_DS(on) enable >96 % efficiency at full load while maintaining junction temperature below 125 °C with passive heatsinking.	Use Scenario: Boost PFC stage in 3 kW telecom rectifier operating from 85–264 V AC input. IC Role / Device Role / Timing Role: Fast-switching boost switch managing 400 V DC bus generation with 65 kHz fixed-frequency control. Use Value: Avalanche rating ensures robustness against line surges and inductor saturation faults; low C_iss minimizes capacitive switching loss at high input voltage.
Solar Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string inverters converting PV array output (600–1000 V) to grid-synchronized AC. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in H-bridge or NPC topology, subjected to repetitive 600 V blocking and 12 A RMS current. Use Value: 600 V V_DS provides sufficient margin over 1000 V PV open-circuit voltage; E_AS rating protects against inverter shoot-through transients.	Use Scenario: Inverter leg switch in 5.5 kW variable-frequency drive powering HVAC compressors. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 3-phase inverter output stage, operating at 8 kHz PWM with 15 A peak phase current. Use Value: TO-247AC package and 0.7 °C/W R_thJC support direct mounting to aluminum heatsink, eliminating need for thermal interface pads in compact enclosures.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 48 V input, 12 V/54 A output LLC resonant converters for AI server racks.

IC Role / Device Role / Timing Role: High-side main switch handling 600 V DC link with 100–300 kHz switching frequency and 15 A peak current.

Use Value: Low Q_g and R_DS(on) enable >96 % efficiency at full load while maintaining junction temperature below 125 °C with passive heatsinking.

Use Scenario: Boost PFC stage in 3 kW telecom rectifier operating from 85–264 V AC input.

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 400 V DC bus generation with 65 kHz fixed-frequency control.

Use Value: Avalanche rating ensures robustness against line surges and inductor saturation faults; low C_iss minimizes capacitive switching loss at high input voltage.

Solar Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string inverters converting PV array output (600–1000 V) to grid-synchronized AC.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in H-bridge or NPC topology, subjected to repetitive 600 V blocking and 12 A RMS current.

Use Value: 600 V V_DS provides sufficient margin over 1000 V PV open-circuit voltage; E_AS rating protects against inverter shoot-through transients.

Use Scenario: Inverter leg switch in 5.5 kW variable-frequency drive powering HVAC compressors.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 3-phase inverter output stage, operating at 8 kHz PWM with 15 A peak phase current.

Use Value: TO-247AC package and 0.7 °C/W R_thJC support direct mounting to aluminum heatsink, eliminating need for thermal interface pads in compact enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW15N60DM2	600 V, 14 A, R_DS(on) = 0.29 Ω, Q_g = 52 nC, DPAK package (lower power density)	Limited to ≤1.5 kW due to higher R_thJA (62 °C/W vs. 0.7 °C/W); unsuitable for high-current PFC	Prefer SIHG15N60E-GE3 where thermal performance and 15 A rating are required; STW15N60DM2 fits space-constrained PCBs without heatsinks.
IXFH15N60P	600 V, 15 A, R_DS(on) = 0.30 Ω, Q_g = 85 nC, TO-247 package but no redundant Drain lead	Higher Q_g increases gate drive loss; lacks dual-Drain configuration for ultra-low inductance layouts	SIHG15N60E-GE3 offers superior FOM and layout flexibility for high-di/dt PFC; IXFH15N60P remains viable where cost is prioritized over minimal switching loss.

Compared with STW15N60DM2 and IXFH15N60P, SIHG15N60E-GE3 delivers the lowest R_DS(on) × Q_g product (21.8 Ω·nC), dual-Drain mechanical robustness, and best-in-class thermal resistance-making it optimal for thermally demanding, high-reliability 2–5 kW power stages.

Availability

SIHG15N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp-up.

Supply support for SIHG15N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and ruggedness.

The SIHG15N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage, high-current hard-switching applications in industrial, telecom, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIHG15N60E-GE3 at 100 °C case temperature?

The SIHG15N60E-GE3 supports 9.6 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-247AC package and ensures safe operation within the 150 °C maximum junction temperature. Designers must verify heatsink performance to maintain T_C ≤ 100 °C under full-load conditions.

Does SIHG15N60E-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHG15N60E-GE3 is fully rated for single-pulse avalanche energy (E_AS = 102 mJ), tested per JEDEC standard JESD24-1 with V_DD = 50 V, L = 11.6 mH, R_g = 25 Ω, and I_AS = 4.2 A. This rating validates robustness against inductive switching transients in motor drives and welding equipment without external protection components.

What is the gate threshold voltage range for SIHG15N60E-GE3, and why does it matter for drive circuit design?

The gate-source threshold voltage (V_GS(th)) for SIHG15N60E-GE3 is 2–4 V at I_D = 250 μA. This narrow range ensures consistent turn-on behavior across temperature and process variation. Drive circuits must supply ≥10 V to guarantee full enhancement (R_DS(on) ≤ 0.28 Ω); marginal 5 V logic drives are insufficient and will cause excessive conduction loss.

How does the dual-Drain configuration (pins 2 and 4) in SIHG15N60E-GE3 improve system performance?

The dual-Drain leads in SIHG15N60E-GE3 reduce package inductance by ~30 % compared to single-Drain TO-247 variants, directly lowering V_DS overshoot and EMI during high-di/dt switching (e.g., >100 A/μs in PFC). This configuration also improves current sharing and thermal distribution across the leadframe, supporting sustained 15 A operation in compact power modules.

Is SIHG15N60E-GE3 suitable for use in zero-voltage switching (ZVS) topologies, and what parameters support this?

Yes, SIHG15N60E-GE3 is well-suited for ZVS applications such as LLC resonant converters due to its low C_oss (70 pF typ), low C_rss (5 pF typ), and predictable Q_gd/Q_g ratio (17/78 nC). These parameters ensure rapid, controlled turn-off and minimal capacitive discharge loss during resonant transitions, enabling high efficiency at 200–500 kHz switching frequencies.

SIHG15N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1350 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 180W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG15N60E-GE3 FAQ

1.How can I place an order for SIHG15N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG15N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG15N60E-GE3 reliable?

The price and inventory of SIHG15N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG15N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG15N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG15N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG15N60E-GE3?

SIHG15N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG15N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG15N60E-GE3?

For technical support, including SIHG15N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG15N60E-GE3 requirements.

6.How does Aetrix verify that SIHG15N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG15N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG15N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG15N60E-GE3?

All SIHG15N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG15N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG15N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHG15N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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