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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG15N80AE-GE3

Name: SIHG15N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHG15N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG15N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG15N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 13A TO247AC

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Product details

Overview

SIHG15N80AE-GE3 from Vishay Siliconix is an 800 V, 13 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.304 Ω at V_GS = 10 V, Q_g = 35 nC (typ), and avalanche-rated (E_AS = 28 mJ). It serves as a high-voltage switching element in primary-side SMPS, PFC stages, and industrial inverters.

For engineers reviewing the SIHG15N80AE-GE3 datasheet, SIHG15N80AE-GE3 pinout, SIHG15N80AE-GE3 application, or SIHG15N80AE-GE3 equivalent, key selection criteria include its 800 V V_DS, low Co(er) of 35 pF, 150 °C T_J rating, and TO-247AC thermal performance with R_thJC = 0.8 °C/W - critical for high-efficiency, high-reliability power conversion designs.

Technical Context

This device employs planar stripe silicon technology optimized for high-voltage hard-switching operation. Its gate charge profile (Q_gd/Q_g = 16/35 nC) supports controlled dv/dt during turn-off, while the integral body diode exhibits t_rr = 333 ns (typ) and Q_rr = 3.7 μC at 25 °C - enabling use in synchronous rectification and freewheeling paths where recovery behavior impacts EMI and losses.

The MOSFET's dynamic parameters are characterized at V_DS = 640 V, I_D = 7.5 A, and R_g = 9.1 Ω, with t_d(on) = 15 ns (typ), t_r = 22 ns (typ), t_d(off) = 35 ns (typ), and t_f = 30 ns (typ). Its 100 V/ns maximum dv/dt rating at T_J = 125 °C ensures robustness against parasitic turn-on in high-speed, high-dV/dt environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 400 V AC input PFC and 600 V DC bus topologies with margin
R_DS(on) typ	0.304 Ω at V_GS = 10 V, I_D = 7.5 A - enables <1.7 W conduction loss at 7.5 A
Q_g max	53 nC - determines gate drive power requirement and switching speed control
E_AS	28 mJ - rated unclamped inductive switching energy for reliable hard-switching operation
R_thJC	0.8 °C/W - enables 156 W dissipation with ≤125 °C case-to-junction rise
t_rr	333 ns typ - defines body diode recovery time in bridge-leg or flyback configurations
Co(er)	35 pF - energy-related output capacitance directly impacts turn-off loss in hard-switched converters

Pinout & Package

SIHG15N80AE-GE3 uses the TO-247AC package: isolated tab (Drain), 3-pin through-hole outline with standard lead assignment per Vishay Package Information Doc 91360 (Version 1–3). Thermal pad optional; mechanical dimensions conform to JEDEC TO-247 with facility-code-dependent tolerances.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level gate drive; requires ≥±30 V V_GS rating for safe operation
2 (Drain)	Main current path anode	Connected to high-voltage DC bus or transformer primary; electrically tied to metal tab
3 (Source)	Reference node / return path	Serves as local ground reference for gate driver; carries full load current and diode reverse recovery charge

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	0.304 Ω × 35 nC = 10.6 nΩ·F - balances conduction and switching loss in 100–300 kHz SMPS
Avalanche energy rating	28 mJ single-pulse - eliminates need for external snubbers in inductive load switching
Reduced Co(er)	35 pF - cuts turn-off energy loss by ~30% vs. legacy 800 V MOSFETs with similar R_DS(on)
High dv/dt immunity	100 V/ns at 125 °C - suppresses false turn-on in high-side configurations with fast-rising V_DS
Pb-free & halogen-free	RoHS-compliant construction - meets IPC/JEDEC J-STD-609A Class 1 marking requirements

Applications

Server Power Supply	Industrial Motor Drive
Use Scenario: Primary-side switching in 1 kW+ telecom rectifiers and server PSUs operating at 380–400 V AC input. IC Role / Device Role / Timing Role: High-voltage power switch in continuous conduction mode (CCM) PFC boost stage and LLC resonant half-bridge. Use Value: 800 V rating provides 20% overvoltage margin above 650 V DC bus; low Q_gd minimizes Miller-induced shoot-through risk in high-frequency operation.	Use Scenario: Inverter leg switching in 3–7.5 kW variable frequency drives for HVAC and pumps. IC Role / Device Role / Timing Role: Upper/lower arm switch in three-phase IGBT/MOSFET inverter modules handling 400 V AC line-fed DC bus. Use Value: Avalanche rating enables safe operation during motor short-circuit events; 150 °C T_J rating supports compact heatsink design in enclosed enclosures.
Solar PV Inverter	Welding Equipment
Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: High-side switch in two-level or three-level NPC inverter topology with active clamp or flying capacitor. Use Value: Low Co(er) reduces turn-off loss at 16–20 kHz switching, improving efficiency above 98.5% at full load.	Use Scenario: Primary-side chopper in IGBT-based or hybrid inverter welders delivering 200–500 A DC output. IC Role / Device Role / Timing Role: Fast-switching main power switch in resonant DC-DC stage feeding inverter output stage. Use Value: 29 A pulsed drain current supports 10 ms peak welding currents; robust body diode handles reverse recovery during polarity reversal.

Server Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switching in 1 kW+ telecom rectifiers and server PSUs operating at 380–400 V AC input.

IC Role / Device Role / Timing Role: High-voltage power switch in continuous conduction mode (CCM) PFC boost stage and LLC resonant half-bridge.

Use Value: 800 V rating provides 20% overvoltage margin above 650 V DC bus; low Q_gd minimizes Miller-induced shoot-through risk in high-frequency operation.

Use Scenario: Inverter leg switching in 3–7.5 kW variable frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: Upper/lower arm switch in three-phase IGBT/MOSFET inverter modules handling 400 V AC line-fed DC bus.

Use Value: Avalanche rating enables safe operation during motor short-circuit events; 150 °C T_J rating supports compact heatsink design in enclosed enclosures.

Solar PV Inverter

Welding Equipment

Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side switch in two-level or three-level NPC inverter topology with active clamp or flying capacitor.

Use Value: Low Co(er) reduces turn-off loss at 16–20 kHz switching, improving efficiency above 98.5% at full load.

Use Scenario: Primary-side chopper in IGBT-based or hybrid inverter welders delivering 200–500 A DC output.

IC Role / Device Role / Timing Role: Fast-switching main power switch in resonant DC-DC stage feeding inverter output stage.

Use Value: 29 A pulsed drain current supports 10 ms peak welding currents; robust body diode handles reverse recovery during polarity reversal.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW15NK80Z	800 V, 14 A, R_DS(on) = 0.32 Ω, Q_g = 55 nC, TO-247 long leads	Higher Q_g increases gate drive loss; identical avalanche rating (28 mJ)	Acceptable where layout allows higher gate drive power and same thermal interface
IXFH15N80X	800 V, 15 A, R_DS(on) = 0.31 Ω, Q_g = 42 nC, TO-247 non-isolated	Non-isolated tab requires insulating mounting; slightly lower Co(er) (32 pF)	Preferred when isolation is handled externally and lower switching loss is prioritized

Compared with SIHG15N80AE-GE3, STW15NK80Z trades marginally higher conduction loss for identical ruggedness but demands more gate drive energy, while IXFH15N80X offers improved switching efficiency at the cost of mandatory electrical isolation between tab and heatsink - making SIHG15N80AE-GE3 optimal for isolated-mount, thermally constrained 800 V SMPS designs.

Availability

SIHG15N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHG15N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIHG15N80AE-GE3 belongs to Vishay's E Series high-voltage power MOSFET family, engineered for demanding hard-switched and resonant converter applications in telecom, industrial, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SIHG15N80AE-GE3 at 100 °C case temperature?

The SIHG15N80AE-GE3 has a continuous drain current rating of 8 A at T_C = 100 °C, derated linearly from 13 A at 25 °C using a 1.25 W/°C factor. This reflects thermal limitation under real-world heatsink conditions, not junction temperature alone. The datasheet specifies this value in Absolute Maximum Ratings Table, confirming operational safety up to 150 °C junction temperature.

Does SIHG15N80AE-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHG15N80AE-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 28 mJ, tested per JEDEC JESD24-1 with V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 1.4 A. This rating applies under repetitive conditions limited only by junction temperature, enabling reliable operation in inductive switching without external protection circuits.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHG15N80AE-GE3, and why does it matter?

The SIHG15N80AE-GE3 body diode has a typical Q_rr of 3.7 μC at T_J = 25 °C, IF = 7.5 A, di/dt = 100 A/μs, and VR = 25 V. This parameter directly impacts switching loss and EMI in synchronous rectification or half-bridge freewheeling paths - lower Q_rr reduces voltage overshoot and associated snubber losses compared to older 800 V MOSFETs.

Can SIHG15N80AE-GE3 be used with 5 V gate drive, or is 10 V required?

SIHG15N80AE-GE3 is not a logic-level MOSFET; its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V, but full enhancement requires V_GS = 10 V to achieve the specified R_DS(on) of 0.304 Ω. At 5 V, R_DS(on) rises significantly (>1.2 Ω), increasing conduction loss beyond acceptable limits - thus 10 V gate drive is mandatory for rated performance.

What is the thermal resistance from junction to case (R_thJC) for SIHG15N80AE-GE3, and how does it affect heatsink selection?

The SIHG15N80AE-GE3 has a maximum R_thJC of 0.8 °C/W, measured from junction to the drain-connected metal tab. This low value enables efficient heat transfer to the heatsink, allowing 156 W power dissipation with only a 125 °C temperature rise from case to junction - guiding heatsink thermal resistance selection to ≤1.0 °C/W for ambient-limited operation at full rated power.

SIHG15N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 350mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1093 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG15N80AE-GE3 FAQ

1.How can I place an order for SIHG15N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG15N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG15N80AE-GE3 reliable?

The price and inventory of SIHG15N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG15N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG15N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG15N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG15N80AE-GE3?

SIHG15N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG15N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG15N80AE-GE3?

For technical support, including SIHG15N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG15N80AE-GE3 requirements.

6.How does Aetrix verify that SIHG15N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG15N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG15N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG15N80AE-GE3?

All SIHG15N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG15N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG15N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHG15N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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