Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG16N50C-E3

Name: SIHG16N50C-E3
Brand: Vishay Siliconix
SKU: SIHG16N50C-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHG16N50C-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG16N50C-E3.pdf

Description:: MOSFET N-CH 500V 16A TO247AC

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:462

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHG16N50C-E3 from Vishay Siliconix is a 500 V, 16 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.38 Ω at V_GS = 10 V, Q_g = 68 nC, and 100 % avalanche tested - designed for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the SIHG16N50C-E3 datasheet, SIHG16N50C-E3 pinout, SIHG16N50C-E3 application, or SIHG16N50C-E3 equivalent, key selection criteria include its 500 V V_DS rating, low R_DS(on) × Q_g figure-of-merit, robust unclamped avalanche capability (E_AS = 320 mJ), and TO-247AC thermal performance (R_thJC = 0.5 °C/W).

Technical Context

This device uses planar vertical DMOS technology with optimized gate oxide and cell pitch to achieve balanced conduction and switching losses. Its body diode exhibits t_rr = 555 ns and Q_rr = 5.5 µC at T_J = 25 °C, supporting hard-switched and resonant topologies requiring controlled reverse recovery.

The MOSFET operates with V_GS(th) = 3.0–5.0 V and supports gate drive from standard 10 V logic-level sources. Thermal design is enabled by its low junction-to-case resistance (0.5 °C/W) and rated continuous power dissipation of 250 W at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports 400 V DC bus designs with 25 % voltage margin for surge and ringing
R_DS(on) max	0.38 Ω at V_GS = 10 V, I_D = 8 A - enables <1.5 W conduction loss at 16 A RMS in PFC boost stage
Q_g max	68 nC - determines gate driver current requirement (~1.4 A peak for 50 ns rise time)
E_AS	320 mJ - ensures single-pulse ruggedness under inductive turn-off without external snubber
R_thJC	0.5 °C/W - allows 250 W power dissipation with ≤125 °C temperature rise above case
t_rr	555 ns - limits diode reverse recovery loss and EMI in hard-switched converters
I_D cont @ T_C=100 °C	10 A - defines usable current derating for heatsink-limited industrial enclosures

Pinout & Package

TO-247AC package with isolated drain tab (pins 2 and 4 both connected to drain), standard 3-lead configuration, and 0.5 °C/W junction-to-case thermal resistance. Mounting requires mechanical isolation between drain tab and heatsink unless system ground reference permits direct thermal coupling.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level drive; input capacitance C_iss = 1900 pF shapes gate loop stability
2 (Drain)	High-side power node	Connected to DC bus or transformer primary; shares internal connection with pin 4 for enhanced current handling
3 (Source)	Reference and return path	Serves as local ground for gate drive; carries full load current and body diode conduction
4 (Drain)	Secondary drain connection	Redundant drain terminal to reduce package inductance and improve current sharing in high-frequency switching

Key Features

Feature	Design Value
Low R_DS(on) × Q_g	Optimized for high-efficiency 65–100 kHz SMPS where conduction and switching losses are co-dominant
100 % avalanche tested	Guarantees single-pulse ruggedness up to 320 mJ without parameter shift or failure
Improved t_rr/Q_rr	Reduces diode-induced voltage overshoot and EMI during turn-on of synchronous rectifiers or half-bridges
RoHS-compliant (E3 suffix)	Lead-free terminations meet Directive 2002/95/EC; compatible with standard Pb-free reflow profiles
Enhanced gate charge profile	Q_gd/Q_g = 32 % minimizes Miller plateau duration, improving dV/dt immunity in high-side configurations

Applications

Industrial Motor Drives	Server & Telecom PSU
Use Scenario: Half-bridge inverter stage for 750 W brushless DC motor control with 400 V DC link. IC Role / Device Role / Timing Role: High-side and low-side switching element; handles 16 A peak phase current with 20 kHz PWM. Use Value: Avalanche rating ensures reliability during regenerative braking transients; low Q_g enables efficient 10 V gate drive from isolated SiO₂ drivers.	Use Scenario: Active clamp forward or LLC resonant converter in 1 kW telecom rectifier. IC Role / Device Role / Timing Role: Primary-side switch operating at 250 kHz with 400 V DC input. Use Value: 500 V rating accommodates 400 V bus + 25 % safety margin; t_rr = 555 ns reduces dead-time loss and improves ZVS initiation.
Industrial PFC Boost Stage	UPS Inverter Output Stage
Use Scenario: Continuous conduction mode (CCM) boost PFC in 3 kW industrial UPS front-end. IC Role / Device Role / Timing Role: Main switching FET handling 16 A RMS input current at 65 kHz. Use Value: R_DS(on) = 0.38 Ω limits conduction loss to <1.0 W; Q_rr = 5.5 µC minimizes diode recovery loss during zero-current switching transitions.	Use Scenario: H-bridge output stage converting 400 V DC to 230 V AC for critical load backup. IC Role / Device Role / Timing Role: Low-side switch in 50 Hz SPWM inverter with 10 A continuous output current. Use Value: 100 % avalanche testing prevents failure during short-circuit or overload events; TO-247AC package enables reliable thermal management at 75 °C ambient.

Industrial Motor Drives

Server & Telecom PSU

Use Scenario: Half-bridge inverter stage for 750 W brushless DC motor control with 400 V DC link.

IC Role / Device Role / Timing Role: High-side and low-side switching element; handles 16 A peak phase current with 20 kHz PWM.

Use Value: Avalanche rating ensures reliability during regenerative braking transients; low Q_g enables efficient 10 V gate drive from isolated SiO₂ drivers.

Use Scenario: Active clamp forward or LLC resonant converter in 1 kW telecom rectifier.

IC Role / Device Role / Timing Role: Primary-side switch operating at 250 kHz with 400 V DC input.

Use Value: 500 V rating accommodates 400 V bus + 25 % safety margin; t_rr = 555 ns reduces dead-time loss and improves ZVS initiation.

Industrial PFC Boost Stage

UPS Inverter Output Stage

Use Scenario: Continuous conduction mode (CCM) boost PFC in 3 kW industrial UPS front-end.

IC Role / Device Role / Timing Role: Main switching FET handling 16 A RMS input current at 65 kHz.

Use Value: R_DS(on) = 0.38 Ω limits conduction loss to <1.0 W; Q_rr = 5.5 µC minimizes diode recovery loss during zero-current switching transitions.

Use Scenario: H-bridge output stage converting 400 V DC to 230 V AC for critical load backup.

IC Role / Device Role / Timing Role: Low-side switch in 50 Hz SPWM inverter with 10 A continuous output current.

Use Value: 100 % avalanche testing prevents failure during short-circuit or overload events; TO-247AC package enables reliable thermal management at 75 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF50	R_DS(on) = 0.36 Ω (typ), Q_g = 72 nC, same TO-220FP package - higher R_thJA (65 °C/W vs. 40 °C/W for TO-247AC)	Limited to lower-power (<500 W) applications due to inferior thermal performance and no avalanche rating	Prefer SIHG16N50C-E3 for >750 W designs requiring avalanche ruggedness and superior heatsinking
IXFH16N50P	R_DS(on) = 0.35 Ω (max), Q_g = 65 nC, TO-247 - includes ultra-low Q_rr (3.2 µC) but no 100 % avalanche test documentation	Better suited for high-frequency ZVS/ZCS topologies where Q_rr dominates loss, less validated for hard-switched fault conditions	Choose SIHG16N50C-E3 when system-level reliability under unclamped inductive switching is mandatory

Compared with STP16NF50 and IXFH16N50P, the SIHG16N50C-E3 offers verified avalanche ruggedness, industry-standard TO-247AC thermal performance, and tighter Q_g/Q_rr balance - making it preferred for industrial-grade 750–3000 W power conversion where long-term field reliability outweighs marginal efficiency gains.

Availability

SIHG16N50C-E3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom PSUs, and UPS systems requiring stable component supply, long lifecycle support, and RoHS-compliant high-voltage switching capability.

Supply support for SIHG16N50C-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.

The SIHG16N50C-E3 belongs to Vishay's high-voltage power MOSFET family engineered for rugged offline switching in 400–800 V DC bus systems, emphasizing avalanche energy rating, thermal robustness, and parametric consistency across manufacturing sites.

FAQ

What is the maximum continuous drain current for SIHG16N50C-E3 at 100 °C case temperature?

The SIHG16N50C-E3 supports 10 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify heatsink interface resistance and ambient airflow to maintain this rating in real-world layouts.

Does SIHG16N50C-E3 have a fully rated avalanche energy specification?

Yes, the SIHG16N50C-E3 is 100 % avalanche tested with a guaranteed single-pulse avalanche energy (E_AS) of 320 mJ under defined test conditions (V_DD = 50 V, L = 2.5 mH, R_g = 25 Ω, I_AS = 16 A). This rating is documented in the Absolute Maximum Ratings table and confirmed per Vishay's internal qualification standards.

What is the gate threshold voltage range for SIHG16N50C-E3?

The SIHG16N50C-E3 has a gate-source threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V at T_J = 25 °C and I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity against spurious turn-on in high-dV/dt environments typical of high-voltage switching nodes.

Is SIHG16N50C-E3 suitable for use in PFC boost circuits?

Yes, the SIHG16N50C-E3 is widely deployed in continuous conduction mode (CCM) PFC boost stages. Its 500 V V_DS, 0.38 Ω R_DS(on), and 555 ns body diode reverse recovery time enable high efficiency and low EMI in 65–100 kHz designs. The device's low Q_rr (5.5 µC) further reduces recovery-related losses during zero-current switching transitions.

What package type does SIHG16N50C-E3 use, and how many drain terminals does it have?

The SIHG16N50C-E3 uses the TO-247AC package and features two drain terminals (pins 2 and 4), both internally connected to the drain metallization. This dual-drain configuration reduces package inductance and improves current distribution, enhancing performance in high-frequency, high-current applications such as motor drives and server PSUs.

SIHG16N50C-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG16N50C-E3 FAQ

1.How can I place an order for SIHG16N50C-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG16N50C-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG16N50C-E3 reliable?

The price and inventory of SIHG16N50C-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG16N50C-E3 is usually 5 days.

3.What payment methods are accepted for SIHG16N50C-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG16N50C-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG16N50C-E3?

SIHG16N50C-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG16N50C-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG16N50C-E3?

For technical support, including SIHG16N50C-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG16N50C-E3 requirements.

6.How does Aetrix verify that SIHG16N50C-E3 is sourced from the original manufacturer or authorized distributors?

All SIHG16N50C-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG16N50C-E3 meets industry standards.

7.What is the process for return or replacement of SIHG16N50C-E3?

All SIHG16N50C-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG16N50C-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG16N50C-E3 part is unused and in its original packaging.

Return procedure for SIHG16N50C-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …