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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG17N60D-E3

Name: SIHG17N60D-E3
Brand: Vishay Siliconix
SKU: SIHG17N60D-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG17N60D-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG17N60D-E3.pdf

Description:: MOSFET N-CH 600V 17A TO247AC

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Product details

Overview

SIHG17N60D-E3 from Vishay Siliconix is a 600 V, 17 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.340 Ω at V_GS = 10 V, Q_g = 90 nC, and avalanche-rated (E_AS = 165.6 mJ). It delivers high ruggedness for industrial switching applications including induction heating, motor drives, and SMPS primary-side switching.

For engineers reviewing the SIHG17N60D-E3 datasheet, SIHG17N60D-E3 pinout, SIHG17N60D-E3 application, or SIHG17N60D-E3 equivalent, this page provides verified technical context, real-world design meaning of key specs, validated pin assignments, application-specific implementation value, and two confirmed alternative parts with documented functional and layout implications.

Technical Context

This device employs a planar stripe DMOS structure optimized for high-voltage switching with low gate charge and fast turn-on/turn-off dynamics. Its dV/dt rating of 24 V/ns at T_J = 125 °C and body diode reverse recovery time (t_rr) of 633–950 ns support robust operation in hard-switched topologies.

The integrated body diode exhibits V_SD = 1.5 V at I_S = 8 A and Q_rr = 7–15 μC, enabling reliable freewheeling in bridge configurations. Thermal resistance R_thJC = 0.45 °C/W ensures efficient heat transfer to heatsinks in high-power continuous duty.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V DC bus designs with ≥50 % voltage margin for surge and ringing.
R_DS(on) max	0.340 Ω at V_GS = 10 V - Enables ≤5.8 W conduction loss at 17 A DC, suitable for 300–500 W power stages.
Q_g	90 nC - Requires ~1.8 W gate drive power at 20 kHz with 10 V swing; compatible with standard 1–2 A peak drivers.
E_AS	165.6 mJ - Withstands single-pulse inductive energy without failure, critical for welder and motor drive snubberless designs.
t_rr	633–950 ns - Limits diode recovery losses in phase-shifted full-bridge; enables use without external Schottky catch diodes.
R_thJC	0.45 °C/W - Allows 125 °C junction operation with ≤62.5 °C case rise at 277.8 W dissipation, supporting forced-air cooling.

Pinout & Package

TO-247AC package with isolated drain tab (pins 2 and 4 both connected to drain), non-isolated metal backside thermal pad, and 3-pin lead frame. Standard mounting hole ØP = 3.56–3.65 mm, D = 20.40–20.70 mm, E = 15.50–15.87 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage current; driven by 10 V logic-level signal for full enhancement.
2 (Drain)	Main power output	Connected directly to high-voltage DC bus; electrically tied to metal tab for low-inductance heat sinking and EMI reduction.
3 (Source)	Power return / reference	Common node for gate drive return and current sensing; must be routed with minimal loop area to reduce switching noise coupling.
4 (Drain)	Secondary drain connection	Redundant drain terminal for parallel PCB trace routing or dual-point heatsink attachment; same potential as Pin 2.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	30.6 Ω·nC - Reduces combined conduction + switching loss, improving efficiency in 50–200 kHz SMPS designs.
Avalanche energy rated (UIS)	165.6 mJ - Eliminates need for external clamping circuits in inductive load switching, simplifying BOM and layout.
High body diode ruggedness	Rated ISM = 48 A pulsed - Sustains high reverse recovery current without degradation in motor drive freewheeling.
Low C_iss = 1780 pF	Minimizes Miller effect during high-dV/dt transitions, reducing risk of false turn-on in half-bridge configurations.
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and JEDEC J-STD-020 reflow profile - supports automated assembly without special process controls.

Applications

Induction Heating	Industrial Motor Drives
Use Scenario: High-frequency resonant tank switching in domestic and commercial induction cooktops (20–50 kHz). IC Role / Device Role / Timing Role: Primary-side high-side switch in full-bridge inverter driving series-resonant LC load. Use Value: Low Q_g and fast t_r/t_f minimize dead-time losses; avalanche rating handles load mismatch transients without snubbers.	Use Scenario: Inverter stage for 0.5–3 kW AC induction motors in HVAC blowers and pumps. IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET inverter with bootstrap gate drive. Use Value: Body diode t_rr < 1 μs prevents shoot-through during commutation; R_DS(on) stability over temperature ensures torque consistency.
Welding Power Supplies	Server/Telecom SMPS
Use Scenario: Primary switch in 5–20 kHz DC-output arc welding inverters with high peak current demands. IC Role / Device Role / Timing Role: Hard-switched main switch handling repetitive 48 A pulses with 100 μs duration. Use Value: E_AS = 165.6 mJ absorbs stored inductor energy during open-circuit faults; TO-247AC thermal mass sustains burst duty cycles.	Use Scenario: Primary-side switch in 300–400 V input, 500 W telecom rectifier modules operating at 100 kHz. IC Role / Device Role / Timing Role: Forward converter or LLC primary switch with synchronous rectification secondary. Use Value: C_iss/C_oss ratio optimizes ZVS transition; low R_DS(on) maintains >94 % efficiency at full load with minimal heatsink.

Induction Heating

Industrial Motor Drives

Use Scenario: High-frequency resonant tank switching in domestic and commercial induction cooktops (20–50 kHz).

IC Role / Device Role / Timing Role: Primary-side high-side switch in full-bridge inverter driving series-resonant LC load.

Use Value: Low Q_g and fast t_r/t_f minimize dead-time losses; avalanche rating handles load mismatch transients without snubbers.

Use Scenario: Inverter stage for 0.5–3 kW AC induction motors in HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET inverter with bootstrap gate drive.

Use Value: Body diode t_rr < 1 μs prevents shoot-through during commutation; R_DS(on) stability over temperature ensures torque consistency.

Welding Power Supplies

Server/Telecom SMPS

Use Scenario: Primary switch in 5–20 kHz DC-output arc welding inverters with high peak current demands.

IC Role / Device Role / Timing Role: Hard-switched main switch handling repetitive 48 A pulses with 100 μs duration.

Use Value: E_AS = 165.6 mJ absorbs stored inductor energy during open-circuit faults; TO-247AC thermal mass sustains burst duty cycles.

Use Scenario: Primary-side switch in 300–400 V input, 500 W telecom rectifier modules operating at 100 kHz.

IC Role / Device Role / Timing Role: Forward converter or LLC primary switch with synchronous rectification secondary.

Use Value: C_iss/C_oss ratio optimizes ZVS transition; low R_DS(on) maintains >94 % efficiency at full load with minimal heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW17NK60Z	R_DS(on) = 0.36 Ω, Q_g = 75 nC, TO-247 package, no UIS rating	Lacks avalanche energy specification; requires external clamping in inductive loads	Preferable where gate drive power is constrained but system-level protection is already implemented
IXFH18N60P	R_DS(on) = 0.32 Ω, Q_g = 105 nC, TO-247 package, E_AS = 140 mJ	Lower R_DS(on) but higher Q_g; slightly reduced avalanche capability	Better for conduction-limited designs with ample gate drive headroom; less tolerant of unclamped inductive spikes

Compared with STW17NK60Z and IXFH18N60P, SIHG17N60D-E3 offers the highest certified avalanche energy (165.6 mJ) and balanced FOM (R_DS(on) × Q_g = 30.6), making it optimal for ruggedized industrial inverters where transient immunity and thermal predictability are prioritized over marginal conduction loss reduction.

Availability

SIHG17N60D-E3 is available at Aetrix Electronics and suitable for induction heating systems, industrial motor drives, and welding power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHG17N60D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and power applications.

The D Series Power MOSFETs, including SIHG17N60D-E3, were engineered for high-efficiency, high-ruggedness switching in 400–600 V DC bus systems-targeting induction heating, motor control, and telecom SMPS where avalanche tolerance and thermal stability are critical.

FAQ

What is the maximum continuous drain current rating for SIHG17N60D-E3 at 100 °C case temperature?

The SIHG17N60D-E3 has a continuous drain current rating of 10.7 A at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits under sustained conduction; actual usable current depends on heatsink performance and ambient conditions. The SIHG17N60D-E3 must be mounted with thermal interface material to maintain safe junction temperatures below 150 °C.

Does SIHG17N60D-E3 support gate drive voltages below 10 V?

Yes - SIHG17N60D-E3 has a gate threshold voltage V_GS(th) of 3–5 V, enabling partial enhancement at lower gate voltages. However, full on-state performance (R_DS(on) ≤ 0.340 Ω) requires V_GS = 10 V per the datasheet test condition. Driving SIHG17N60D-E3 at 5 V yields significantly higher R_DS(on) and increased conduction loss, so 10 V is recommended for efficiency-critical applications.

Is SIHG17N60D-E3 suitable for use in a synchronous rectifier configuration?

No - SIHG17N60D-E3 is not optimized for synchronous rectification. Its body diode reverse recovery characteristics (t_rr = 633–950 ns, Q_rr = 7–15 μC) are designed for freewheeling in hard-switched topologies, not zero-voltage switching. For synchronous rectification, dedicated low-Q_rr, logic-level MOSFETs with enhanced diode softness are preferred. SIHG17N60D-E3 remains best suited for primary-side switching roles.

What is the thermal resistance from junction to case (R_thJC) for SIHG17N60D-E3?

The maximum junction-to-case thermal resistance R_thJC for SIHG17N60D-E3 is 0.45 °C/W, measured from junction to the drain tab (case). This value enables precise thermal modeling when mounted to a heatsink with known interface resistance. The SIHG17N60D-E3's TO-247AC package uses the drain tab as the primary thermal path, so mechanical mounting integrity directly impacts thermal performance.

Can SIHG17N60D-E3 replace older SiHG17N60E variants in existing designs?

SIHG17N60D-E3 is not a direct drop-in replacement for SiHG17N60E due to differences in gate charge (Q_g = 90 nC vs. ~110 nC for E-series) and body diode recovery (t_rr ~633 ns vs. ~1200 ns). While pinout and package match, gate drive timing and snubber requirements may change. Validation of switching waveforms and thermal behavior is required before substituting SIHG17N60D-E3 into legacy SiHG17N60E designs.

SIHG17N60D-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 340mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1780 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 277.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG17N60D-E3 FAQ

1.How can I place an order for SIHG17N60D-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG17N60D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG17N60D-E3 reliable?

The price and inventory of SIHG17N60D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG17N60D-E3 is usually 5 days.

3.What payment methods are accepted for SIHG17N60D-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG17N60D-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG17N60D-E3?

SIHG17N60D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG17N60D-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG17N60D-E3?

For technical support, including SIHG17N60D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG17N60D-E3 requirements.

6.How does Aetrix verify that SIHG17N60D-E3 is sourced from the original manufacturer or authorized distributors?

All SIHG17N60D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG17N60D-E3 meets industry standards.

7.What is the process for return or replacement of SIHG17N60D-E3?

All SIHG17N60D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG17N60D-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG17N60D-E3 part is unused and in its original packaging.

Return procedure for SIHG17N60D-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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