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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG17N60D-GE3

Name: SIHG17N60D-GE3
Brand: Vishay Siliconix
SKU: SIHG17N60D-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG17N60D-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG17N60D-GE3.pdf

Description:: MOSFET N-CH 600V 17A TO247AC

Quantity:: RFQ Add To RFQ list

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Inventory:2,429

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Product details

Overview

SIHG17N60D-GE3 from Vishay Siliconix is a 600 V, 17 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.340 Ω at V_GS = 10 V, Q_g = 90 nC, and avalanche-rated (E_AS = 165.6 mJ), designed for high-voltage switching in industrial SMPS and motor drives.

For engineers reviewing the SIHG17N60D-GE3 datasheet, SIHG17N60D-GE3 pinout, SIHG17N60D-GE3 application, or SIHG17N60D-GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, gate drive requirements, body diode recovery behavior, and real-world use context for high-reliability power conversion design.

Technical Context

This device employs planar stripe DMOS technology with optimized cell layout to achieve low area-specific R_DS(on) and reduced C_iss (1780 pF) and C_rss (15 pF), enabling fast switching (t_r = 56–85 ns, t_f = 30–60 ns) with low capacitive losses. Its rugged body diode supports high dI/dt (100 A/μs) and exhibits trr = 633–950 ns with Q_rr = 7–15 μC.

The MOSFET operates with V_GS(th) = 3–5 V, ensuring reliable turn-on with standard 10 V gate drivers, and maintains stable V_DS = 600 V breakdown across -55 °C to +150 °C. Thermal resistance R_thJC = 0.45 °C/W enables high-power dissipation (P_D = 277.8 W) when mounted on heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in continuous operation with safety margin for transients in offline SMPS.
R_DS(on) max	0.340 Ω at V_GS = 10 V, T_J = 25 °C - Enables <1.1 W conduction loss at 17 A, critical for thermal management in high-current inverters.
Q_g	90 nC - Determines total gate drive energy required; combined with low R_g (1.6 Ω) enables efficient 100 kHz+ switching with moderate driver strength.
E_AS	165.6 mJ - Rated unclamped inductive switching energy ensures robustness against load dump or short-circuit events without failure.
t_rr	633–950 ns - Body diode reverse recovery time directly impacts commutation losses and EMI in bridge topologies like LLC or phase-shifted full-bridge.
R_thJC	0.45 °C/W - Allows junction temperature rise of only 125 °C at 277.8 W dissipation, supporting high-power density designs with active cooling.
I_D continuous	17 A at T_C = 25 °C - Specifies maximum steady-state current under ideal heatsinking; derates to 10.7 A at T_C = 100 °C per linear factor of 2.22 W/°C.

Pinout & Package

SIHG17N60D-GE3 is housed in a TO-247AC package with isolated drain tab, rated for high-voltage isolation and high thermal conductivity. The case serves as the Drain terminal, enabling direct mounting to heatsinks with electrical isolation.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate	Control input requiring ~90 nC charge; low 1.6 Ω internal R_g simplifies external gate resistor selection for EMI vs. speed trade-off.
2 (Tab)	Drain	Main high-side power path; electrically connected to metal tab - must be insulated from heatsink unless system ground referenced.
3 (Lead)	Source	Power return and gate reference node; ties to PCB ground plane; carries full load current and body diode reverse recovery current.
4 (Lead)	Drain	Secondary drain connection for enhanced current sharing and thermal spreading; electrically identical to tab (Pin 2).

Key Features

Feature	Design Value
Low Figure-of-Merit (R_DS(on) × Q_g)	30.6 Ω·nC - Balances conduction and switching losses for optimal efficiency in 50–200 kHz hard-switched converters.
Avalanche Energy Rating (E_AS)	165.6 mJ - Guarantees single-pulse survivability during overcurrent faults without derating or external snubbers.
High Body Diode Ruggedness	Rated ISM = 48 A pulsed, trr = 633–950 ns - Supports synchronous rectification and bidirectional current flow in resonant topologies.
Low Input Capacitance (C_iss)	1780 pF - Reduces Miller effect and gate drive power, easing implementation with low-cost gate drivers in high-frequency applications.
Lead (Pb)-free & Halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - Meets environmental compliance for global industrial and consumer shipments.

Applications

Industrial Motor Drives	Welding Power Supplies
Use Scenario: Three-phase IGBT/MOSFET inverter stage driving 3–7.5 kW AC induction motors with field-oriented control. IC Role / Device Role / Timing Role: High-side switching element in 6-pack half-bridge configuration; handles 600 V DC link with 17 A RMS output current. Use Value: Low R_DS(on) minimizes conduction loss at partial load; avalanche rating protects against regenerative braking voltage spikes.	Use Scenario: Primary-side switch in high-current DC output welding inverters operating at 20–50 kHz with >100 A output capability. IC Role / Device Role / Timing Role: Main power switch in full-bridge topology; subjected to repetitive high dI/dt and voltage overshoot during arc ignition. Use Value: Fast trr and high dV/dt immunity (24 V/ns) suppress parasitic turn-on; rugged body diode withstands reverse recovery stress during zero-voltage switching transitions.
Induction Heating Systems	Server/Telecom SMPS
Use Scenario: Resonant half-bridge in 20–100 kHz induction cooktops or industrial heating coils delivering 2–5 kW RF power. IC Role / Device Role / Timing Role: High-frequency switching transistor in series-resonant tank; conducts high di/dt currents with minimal switching loss. Use Value: Low Q_g/Q_gd ratio (90 nC / 22 nC) reduces Miller plateau duration, improving ZVS margin and reducing dead-time sensitivity.	Use Scenario: Primary-side switch in 3.3 kW telecom rectifier or server PSU using active clamp forward or LLC topology. IC Role / Device Role / Timing Role: Main power switch handling 380–400 V DC input; operates continuously at 100–250 kHz with tight thermal constraints. Use Value: R_thJC = 0.45 °C/W enables compact heatsink design; low C_oss (140 pF) improves light-load efficiency in burst-mode operation.

Industrial Motor Drives

Welding Power Supplies

Use Scenario: Three-phase IGBT/MOSFET inverter stage driving 3–7.5 kW AC induction motors with field-oriented control.

IC Role / Device Role / Timing Role: High-side switching element in 6-pack half-bridge configuration; handles 600 V DC link with 17 A RMS output current.

Use Value: Low R_DS(on) minimizes conduction loss at partial load; avalanche rating protects against regenerative braking voltage spikes.

Use Scenario: Primary-side switch in high-current DC output welding inverters operating at 20–50 kHz with >100 A output capability.

IC Role / Device Role / Timing Role: Main power switch in full-bridge topology; subjected to repetitive high dI/dt and voltage overshoot during arc ignition.

Use Value: Fast trr and high dV/dt immunity (24 V/ns) suppress parasitic turn-on; rugged body diode withstands reverse recovery stress during zero-voltage switching transitions.

Induction Heating Systems

Server/Telecom SMPS

Use Scenario: Resonant half-bridge in 20–100 kHz induction cooktops or industrial heating coils delivering 2–5 kW RF power.

IC Role / Device Role / Timing Role: High-frequency switching transistor in series-resonant tank; conducts high di/dt currents with minimal switching loss.

Use Value: Low Q_g/Q_gd ratio (90 nC / 22 nC) reduces Miller plateau duration, improving ZVS margin and reducing dead-time sensitivity.

Use Scenario: Primary-side switch in 3.3 kW telecom rectifier or server PSU using active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: Main power switch handling 380–400 V DC input; operates continuously at 100–250 kHz with tight thermal constraints.

Use Value: R_thJC = 0.45 °C/W enables compact heatsink design; low C_oss (140 pF) improves light-load efficiency in burst-mode operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18N60DM6	R_DS(on) = 0.32 Ω, Q_g = 75 nC, TO-220FP package, lower E_AS (130 mJ)	Limited to <100 W conduction-limited designs due to higher R_thJA; unsuitable for >10 A continuous without forced air	Prefer for cost-sensitive, space-constrained low-power SMPS where peak current <12 A and avalanche margin is secondary
IXTH16N60L2	R_DS(on) = 0.36 Ω, Q_g = 62 nC, TO-247 package, logic-level V_GS(th) = 2–4 V	Lower gate charge eases drive but requires tighter V_GS control; no specified E_AS rating	Choose when gate drive is limited to 5 V or 8 V, and system lacks unclamped inductive stress; avoid in welder/motor drive primary switches

Compared with STP18N60DM6 and IXTH16N60L2, SIHG17N60D-GE3 delivers superior avalanche ruggedness and thermal performance in TO-247AC, making it the preferred choice for industrial-grade 600 V switching where reliability under transient overload is non-negotiable.

Availability

SIHG17N60D-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, welding power supplies, and induction heating systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHG17N60D-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The D Series Power MOSFETs, including SIHG17N60D-GE3, were engineered for high-voltage industrial switching applications demanding low R_DS(on), fast switching, and guaranteed avalanche capability.

FAQ

What is the maximum continuous drain current rating for SIHG17N60D-GE3 at 100 °C case temperature?

The SIHG17N60D-GE3 has a continuous drain current rating of 10.7 A at T_C = 100 °C, derived from its 17 A rating at 25 °C and linear derating factor of 2.22 W/°C. This value reflects thermal limits under real heatsink conditions and must be validated with actual board layout and airflow.

Does SIHG17N60D-GE3 support gate drive at 5 V, or is 10 V mandatory for full enhancement?

SIHG17N60D-GE3 has a gate threshold voltage V_GS(th) of 3–5 V, meaning it begins conducting at 5 V but achieves full enhancement only at V_GS = 10 V, where R_DS(on) is guaranteed ≤ 0.340 Ω. Driving at 5 V yields significantly higher on-resistance and is not recommended for power-switching applications.

What is the significance of the "-GE3" suffix in SIHG17N60D-GE3?

The "-GE3" suffix indicates that SIHG17N60D-GE3 is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and JEDEC JS709C standards. It denotes the same die and TO-247AC package as SiHG17N60D-E3 but with fully green material content.

Can SIHG17N60D-GE3 replace older SiHG17N60E in existing designs?

No - SIHG17N60D-GE3 belongs to the D Series with optimized FOM and avalanche rating, while SiHG17N60E is an earlier generation with higher R_DS(on) (0.38 Ω) and no specified E_AS. Pinout and package match, but electrical differences require validation of gate drive, thermal, and fault-handling margins before substitution.

What is the typical body diode forward voltage (V_SD) of SIHG17N60D-GE3 at 8 A and 25 °C?

The typical body diode forward voltage V_SD of SIHG17N60D-GE3 is 1.5 V at I_S = 8 A, T_J = 25 °C, and V_GS = 0 V. This parameter directly affects conduction loss during freewheeling phases in bridge configurations and influences thermal design in bidirectional topologies.

SIHG17N60D-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 340mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1780 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 277.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG17N60D-GE3 FAQ

1.How can I place an order for SIHG17N60D-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG17N60D-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG17N60D-GE3 reliable?

The price and inventory of SIHG17N60D-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG17N60D-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG17N60D-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG17N60D-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG17N60D-GE3?

SIHG17N60D-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG17N60D-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG17N60D-GE3?

For technical support, including SIHG17N60D-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG17N60D-GE3 requirements.

6.How does Aetrix verify that SIHG17N60D-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG17N60D-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG17N60D-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG17N60D-GE3?

All SIHG17N60D-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG17N60D-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG17N60D-GE3 part is unused and in its original packaging.

Return procedure for SIHG17N60D-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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