Vishay Siliconix SIHG17N80AEF-GE3

Overview

SIHG17N80AEF-GE3 from Vishay Siliconix is an 800 V, 15 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.263 Ω at V_GS = 10 V, Q_g = 42 nC (typ), and fast body diode with t_rr = 114 ns - optimized for high-efficiency PFC and telecom SMPS stages.

For engineers reviewing the SIHG17N80AEF-GE3 datasheet, SIHG17N80AEF-GE3 pinout, SIHG17N80AEF-GE3 application, or SIHG17N80AEF-GE3 equivalent, key selection criteria include its 800 V V_DS rating, low Co(er) = 39 pF, avalanche-rated E_AS = 127 mJ, and thermal resistance R_thJC = 0.7 °C/W - critical for high-voltage hard-switched topologies.

Technical Context

This device uses a planar high-voltage silicon process with optimized charge balance for reduced switching losses. Its fast intrinsic body diode (t_rr = 114 ns, Q_rr = 0.7 μC) enables ZVS-capable operation in totem-pole PFC and reduces snubber stress in flyback/LLC primary switches.

The EF Series architecture integrates low effective output capacitance (Co(er) = 39 pF) and low gate charge (Q_g = 42 nC typ), achieving a figure-of-merit (R_DS(on) × Q_g) of 11.0 Ω·nC - enabling high-frequency operation up to 300 kHz in server PSU primary-side switching.

Key Specifications

Pinout & Package

TO-247AC package with isolated drain tab (pins 2 and 4 both connected to drain), standard 3-lead configuration, 20.55 mm × 15.70 mm footprint, 15.15 mm height, and 0.7 °C/W junction-to-case thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW20NK80Z and IXTH16N80L2, SIHG17N80AEF-GE3 delivers superior figure-of-merit (11.0 vs. ≥16.5 Ω·nC), guaranteed avalanche rating, and characterized fast body diode - making it the preferred choice for high-reliability, high-efficiency 800 V switching where diode recovery and ruggedness are design-critical.

Availability

SIHG17N80AEF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIHG17N80AEF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The EF Series power MOSFETs, including SIHG17N80AEF-GE3, were engineered specifically for high-voltage, high-frequency switching in server, telecom, and renewable energy power conversion systems - emphasizing low loss, avalanche ruggedness, and fast body diode performance.

FAQ

What is the maximum continuous drain current rating for SIHG17N80AEF-GE3 at 100 °C case temperature?

The SIHG17N80AEF-GE3 has a continuous drain current rating of 9 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under real-world heatsink conditions and must be verified against actual board layout and airflow. The SIHG17N80AEF-GE3 maintains R_DS(on) = 0.305 Ω (max) at this condition, ensuring predictable conduction loss.

Does SIHG17N80AEF-GE3 have a specified avalanche energy rating, and how is it tested?

Yes, SIHG17N80AEF-GE3 is rated for single-pulse avalanche energy (E_AS) of 127 mJ, tested per JEDEC JESD24-1 with V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3 A. This rating confirms ruggedness against inductive switching faults without external protection, a key differentiator versus non-avalanche-rated 800 V MOSFETs. The SIHG17N80AEF-GE3 datasheet explicitly lists this parameter in the Absolute Maximum Ratings section.

What is the reverse recovery time (t_rr) of the body diode in SIHG17N80AEF-GE3, and under what conditions is it measured?

The SIHG17N80AEF-GE3 body diode has a typical reverse recovery time (t_rr) of 114 ns, measured at T_J = 25 °C, I_F = I_S = 8.5 A, di/dt = 100 A/μs, and V_R = 400 V. This value is documented in the "Drain-Source Body Diode Characteristics" table and confirmed in Figure 9 of the datasheet. The SIHG17N80AEF-GE3's fast t_rr directly reduces switching loss and EMI in bridge-leg commutation.

Is SIHG17N80AEF-GE3 lead (Pb)-free and halogen-free, and which compliance standards does it meet?

Yes, SIHG17N80AEF-GE3 is lead (Pb)-free and halogen-free, as stated in the Ordering Information section. It complies with the EU RoHS Directive 2011/65/EU and satisfies Vishay's internal material categorization per document 99912. The "-GE3" suffix explicitly denotes Green (halogen-free) and lead-free construction. SIHG17N80AEF-GE3 meets JEDEC JS-001 CDM Class H2 for electrostatic discharge robustness.

What is the thermal resistance from junction to case (R_thJC) for SIHG17N80AEF-GE3, and how does it impact heatsink design?

The SIHG17N80AEF-GE3 has a maximum junction-to-case thermal resistance (R_thJC) of 0.7 °C/W, as specified in the Thermal Resistance Ratings table. This low value enables efficient heat transfer from the die to the heatsink via the TO-247AC drain tab. For a 150 W dissipation scenario, this allows a 105 °C junction rise above case temperature - simplifying heatsink sizing and supporting compact, high-power-density designs. The SIHG17N80AEF-GE3 datasheet confirms this value applies to the standard TO-247AC package variant.