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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG17N80E-GE3

Name: SIHG17N80E-GE3
Brand: Vishay Siliconix
SKU: SIHG17N80E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG17N80E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG17N80E-GE3.pdf

Description:: MOSFET N-CH 800V 15A TO247AC

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Product details

Overview

SIHG17N80E-GE3 from Vishay Siliconix is an 800 V, 15 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.25 Ω (typ. at V_GS = 10 V), Q_g = 61 nC (typ.), and avalanche-rated (E_AS = 353 mJ). It serves as a high-voltage switching device in primary-side SMPS, PFC stages, and solar inverters.

For engineers reviewing the SIHG17N80E-GE3 datasheet, SIHG17N80E-GE3 pinout, SIHG17N80E-GE3 application, or SIHG17N80E-GE3 equivalent, key selection criteria include its 800 V V_DS, low gate charge for fast switching, robust UIS capability, and thermal resistance of 0.6 °C/W (junct-to-case).

Technical Context

This MOSFET employs planar high-voltage silicon technology optimized for hard-switched, high-frequency power conversion. Its low C_iss (2408 pF) and ultra-low Q_gd/Q_g ratio (23/61 nC) reduce Miller-induced turn-off delay and improve voltage transient immunity.

The integrated body diode supports synchronous rectification and unclamped inductive switching with t_rr = 416 ns (typ.) and Q_rr = 6.4 μC (typ.). Thermal design is enabled by the TO-247AC package's 0.6 °C/W R_thJC, supporting continuous 208 W dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands DC bus voltages up to 640 V after derating; suitable for 400 V AC input PFC and 600 V DC solar inverter applications.
R_DS(on)	0.25 Ω (typ. at 25 °C) - Enables <1.8 W conduction loss at 8.5 A, critical for high-efficiency 1–3 kW power stages.
Q_g	61 nC (typ.) - Reduces gate drive power and enables >100 kHz switching with standard 1–2 W drivers.
E_AS	353 mJ - Rated for repetitive unclamped inductive switching events without failure, essential for flyback and LLC resonant converters.
C_iss	2408 pF - Low input capacitance minimizes gate drive energy and improves dV/dt immunity in high-noise environments.
t_r/t_f	24/26 ns (typ.) - Fast edge rates support high-frequency operation while maintaining EMI control via external gate resistor tuning.
R_thJC	0.6 °C/W - Allows direct heatsink mounting for high-power density designs; junction temperature rise is only 93 °C at 155 W dissipation.

Pinout & Package

SIHG17N80E-GE3 uses the TO-247AC package: a 3-lead, through-hole, high-voltage power package with isolated drain tab, optimized for thermal performance and creepage/clearance compliance at 800 V.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level gate drive; requires ≤ 1.4 Ω gate resistance to limit peak current during fast switching.
2 (Drain)	Main high-side current path	Connected to high-voltage DC bus; electrically tied to metal tab-must be insulated from heatsink unless referenced to same potential.
3 (Source)	Reference node & return path	Serves as local ground reference for gate driver; carries full load current and reverse diode conduction current (up to 15 A continuous).

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	15.25 Ω·nC - Balances conduction and switching losses for optimal efficiency across 50–300 kHz operating range.
Avalanche energy rating	353 mJ single-pulse - Eliminates need for external snubbers in inductive load switching and enables robust overvoltage protection.
Ultra-low Q_gd	23 nC - Minimizes Miller plateau duration, reducing susceptibility to false turn-on during high dV/dt transitions.
Low C_oss (energy-related)	58 pF - Reduces turn-off energy loss (E_off) and improves light-load efficiency in hard-switched topologies.
Body diode Q_rr	6.4 μC (typ.) - Enables efficient freewheeling in bridge configurations; lower than comparable 800 V MOSFETs by ~25 %.

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switch in 1.5 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from 380–400 V DC bus to transformer primary. Use Value: 800 V rating accommodates 100 % hold-up margin; low Q_g enables 200 kHz operation with <1.2 W gate loss.	Use Scenario: DC-link switch in string inverter H-bridge stage converting 600–1000 V DC to 230 V AC. IC Role / Device Role / Timing Role: High-side power switch handling bidirectional current during PWM commutation. Use Value: Avalanche rating ensures reliability during grid fault transients; R_DS(on) < 0.29 Ω limits conduction loss to <2.2 W at 12 A RMS.
PFC Boost Converter	Industrial Motor Drive
Use Scenario: Switching device in continuous conduction mode (CCM) boost PFC stage for 3 kW industrial UPS. IC Role / Device Role / Timing Role: Fast-turning switch modulated at 65–100 kHz to shape input current waveform. Use Value: Low C_iss and Q_gd maintain THD < 5 % at full load; 0.6 °C/W R_thJC sustains 15 A continuous without forced air.	Use Scenario: Inverter leg switch in 7.5 kW VFD driving 3-phase induction motor. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 2-level inverter output stage. Use Value: Body diode t_rr < 832 ns prevents shoot-through during commutation; 45 A pulsed rating handles motor stall currents.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switch in 1.5 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from 380–400 V DC bus to transformer primary.

Use Value: 800 V rating accommodates 100 % hold-up margin; low Q_g enables 200 kHz operation with <1.2 W gate loss.

Use Scenario: DC-link switch in string inverter H-bridge stage converting 600–1000 V DC to 230 V AC.

IC Role / Device Role / Timing Role: High-side power switch handling bidirectional current during PWM commutation.

Use Value: Avalanche rating ensures reliability during grid fault transients; R_DS(on) < 0.29 Ω limits conduction loss to <2.2 W at 12 A RMS.

PFC Boost Converter

Industrial Motor Drive

Use Scenario: Switching device in continuous conduction mode (CCM) boost PFC stage for 3 kW industrial UPS.

IC Role / Device Role / Timing Role: Fast-turning switch modulated at 65–100 kHz to shape input current waveform.

Use Value: Low C_iss and Q_gd maintain THD < 5 % at full load; 0.6 °C/W R_thJC sustains 15 A continuous without forced air.

Use Scenario: Inverter leg switch in 7.5 kW VFD driving 3-phase induction motor.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 2-level inverter output stage.

Use Value: Body diode t_rr < 832 ns prevents shoot-through during commutation; 45 A pulsed rating handles motor stall currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK80Z	800 V, 20 A, R_DS(on) = 0.33 Ω, Q_g = 105 nC, TO-247 long leads	Higher conduction loss but higher current rating; slower switching due to larger Q_g	Preferred where peak current >17 A matters more than switching frequency or efficiency.
IXTH16N80L2	800 V, 16 A, R_DS(on) = 0.32 Ω, Q_g = 72 nC, TO-247 non-isolated	Similar Q_g but higher R_DS(on); no avalanche rating specified	Consider when cost sensitivity outweighs need for UIS robustness and lowest R_DS(on).

Compared with STW20NK80Z and IXTH16N80L2, SIHG17N80E-GE3 delivers the lowest R_DS(on) × Q_g figure-of-merit (15.25 Ω·nC), enabling highest efficiency in 100–250 kHz hard-switched applications where both conduction and switching losses must be minimized.

Availability

SIHG17N80E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for SIHG17N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial and computing applications.

The E Series Power MOSFETs-including SIHG17N80E-GE3-are engineered for high-voltage, high-efficiency switching in telecom, server, and renewable energy systems where low R_DS(on), low Q_g, and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for SIHG17N80E-GE3 at 100 °C case temperature?

The SIHG17N80E-GE3 has a continuous drain current rating of 10 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 15 A rating at 25 °C, based on the device's R_thJC = 0.6 °C/W and maximum T_J = 150 °C limit. At 100 °C case temperature, the allowable power dissipation is 30 W, consistent with its R_DS(on) = 0.29 Ω (max) under those conditions.

Does SIHG17N80E-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHG17N80E-GE3 is fully rated for repetitive unclamped inductive switching (UIS) with E_AS = 353 mJ (single-pulse, test condition: V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 5.0 A, starting T_J = 25 °C). This rating is verified per JEDEC standard JESD24-1 and guarantees safe operation during inductive turn-off transients without degradation, provided junction temperature remains within limits.

What is the gate threshold voltage range for SIHG17N80E-GE3, and how does it affect drive requirements?

The gate-source threshold voltage V_GS(th) for SIHG17N80E-GE3 is specified from 2.0 V to 4.0 V at I_D = 250 μA. This range confirms logic-compatible turn-on behavior, but full enhancement requires V_GS ≥ 10 V to achieve the rated R_DS(on) of 0.25 Ω. Gate drive circuits must supply ≥12 V with sufficient current to charge Q_g = 61 nC rapidly, avoiding partial turn-on states that increase switching losses in the SIHG17N80E-GE3.

Can SIHG17N80E-GE3 be used in parallel configurations, and what design considerations apply?

SIHG17N80E-GE3 can be paralleled, but requires careful attention to layout symmetry, gate drive impedance matching, and source inductance balancing to ensure current sharing. Its positive V_DS temperature coefficient (1.08 V/°C) supports inherent thermal stability during parallel operation. For reliable sharing, individual gate resistors (≤ 5 Ω) and Kelvin source connections are recommended-especially above 20 A total current-to prevent oscillation and unequal stress in the SIHG17N80E-GE3 array.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHG17N80E-GE3, and why does it matter in bridge topologies?

The SIHG17N80E-GE3 body diode has Q_rr = 6.4 μC (typ.) at T_J = 25 °C, I_F = 8.5 A, dI/dt = 100 A/μs, and V_R = 25 V. In half-bridge or full-bridge configurations, low Q_rr reduces commutation losses and diode reverse recovery noise, directly improving efficiency and EMI performance. Compared to alternatives, this value is ~20–30 % lower, making SIHG17N80E-GE3 especially suitable for high-frequency synchronous rectification and ZVS-assisted topologies.

SIHG17N80E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2408 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG17N80E-GE3 FAQ

1.How can I place an order for SIHG17N80E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG17N80E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG17N80E-GE3 reliable?

The price and inventory of SIHG17N80E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG17N80E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG17N80E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG17N80E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG17N80E-GE3?

SIHG17N80E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG17N80E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG17N80E-GE3?

For technical support, including SIHG17N80E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG17N80E-GE3 requirements.

6.How does Aetrix verify that SIHG17N80E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG17N80E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG17N80E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG17N80E-GE3?

All SIHG17N80E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG17N80E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG17N80E-GE3 part is unused and in its original packaging.

Return procedure for SIHG17N80E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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