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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG180N60E-GE3

Name: SIHG180N60E-GE3
Brand: Vishay Siliconix
SKU: SIHG180N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG180N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG180N60E-GE3.pdf

Description:: MOSFET N-CH 600V 19A TO247AC

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Product details

Overview

SIHG180N60E-GE3 from Vishay Siliconix is a 600 V, 19 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.155 Ω (typ. at V_GS = 10 V), Q_g = 22 nC (typ.), and 111 mJ single-pulse avalanche energy. It serves as a high-voltage switching element in PFC and SMPS stages of telecom and server power supplies.

For engineers reviewing the SIHG180N60E-GE3 datasheet, SIHG180N60E-GE3 pinout, SIHG180N60E-GE3 application, or SIHG180N60E-GE3 equivalent, key selection criteria include its 600 V V_DS rating, low 0.155 Ω on-resistance at 10 V gate drive, 22 nC gate charge for efficient hard-switching, and robust 111 mJ UIS capability in high-reliability industrial power converters.

Technical Context

This device implements Vishay's 4th-generation E series trench-gate MOSFET architecture optimized for high-voltage switching with reduced figure-of-merit (R_DS(on) × Q_g). Its Co(er) = 41 pF and C_iss = 1085 pF support fast turn-on while limiting voltage overshoot during hard commutation.

The integrated body diode exhibits t_rr = 282 ns (typ.) and Q_rr = 3.6 μC (typ.) at 25 °C, enabling moderate-frequency synchronous rectification or freewheeling in discontinuous conduction mode topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in telecom/server PFC stages
R_DS(on) (typ.)	0.155 Ω at V_GS = 10 V - enables <1.4 W conduction loss at 9.5 A continuous drain current
Q_g (typ.)	22 nC - allows efficient gate driving with standard 1–2 A peak gate drivers at 100–300 kHz switching frequencies
E_AS	111 mJ - provides ruggedness against inductive switching stress in unclamped inductive load circuits
t_rr	282 ns (typ.) - limits reverse recovery losses in totem-pole PFC and half-bridge configurations
R_thJC	0.8 °C/W - enables 156 W power dissipation with ≤125 °C case temperature rise above ambient
I_D (cont.)	19 A at T_C = 25 °C - suitable for 500–1000 W power stage designs with forced-air cooling

Pinout & Package

SIHG180N60E-GE3 uses the industry-standard TO-247AC package with isolated tab (drain-connected), optimized for high-voltage isolation and thermal performance in high-power applications.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level gate drive; input capacitance C_iss = 1085 pF requires careful PCB layout to minimize ringing
2 (Drain)	Main high-side current path	Connected to TO-247AC metal tab; electrically tied to drain terminal and must be isolated from heatsink unless referenced to same potential
3 (Source)	Reference node for gate drive	Serves as return path for load current and gate driver ground; critical for minimizing common-source inductance in high-di/dt switching
4 (Drain)	Secondary drain connection	Redundant drain pin for improved current sharing and reduced package inductance in high-frequency hard-switching applications

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	3.41 Ω·nC - reduces combined conduction and switching losses in 100–200 kHz PFC and LLC resonant converters
Avalanche-rated (UIS)	111 mJ single-pulse - eliminates need for external snubbers in flyback or forward converter primary switches
Low effective output capacitance Co(er)	41 pF - minimizes stored energy (E_oss) and improves zero-voltage switching (ZVS) initiation in resonant topologies
Enhanced body diode recovery	Q_rr = 3.6 μC (typ.) - lowers diode conduction loss and EMI in totem-pole PFC compared to earlier generation 600 V MOSFETs
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - supports environmentally compliant industrial and telecom equipment manufacturing

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 3.3 kW front-end AC-DC power supplies with active PFC and LLC resonant DC-DC stages. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost PFC and high-voltage bridge leg in LLC half-bridge. Use Value: 600 V rating and 111 mJ avalanche energy ensure reliable operation under line surges and load transients typical in datacenter environments.	Use Scenario: Output rectification and hold-up capacitor charging in -48 V telecom rectifier modules operating at 100–300 kHz. IC Role / Device Role / Timing Role: Synchronous rectifier and auxiliary power switch in dual-active-bridge (DAB) isolated DC-DC converters. Use Value: Low Q_rr and fast t_rr reduce reverse recovery losses by >30 % versus legacy 600 V MOSFETs, improving efficiency at partial load.
Industrial Motor Drives	Solar PV Inverters
Use Scenario: Inverter leg switching in 5–10 kW variable frequency drives for HVAC and pump control. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 3-phase inverter bridges operating up to 16 kHz PWM frequency. Use Value: R_DS(on) = 0.155 Ω enables lower conduction loss than 650 V SiC MOSFETs in <10 kHz applications, reducing system cost.	Use Scenario: DC link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: High-side switch in three-level NPC (neutral-point-clamped) inverter topology. Use Value: TO-247AC package and 0.8 °C/W R_thJC support 156 W dissipation with passive heatsinking, simplifying thermal design in outdoor enclosures.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 3.3 kW front-end AC-DC power supplies with active PFC and LLC resonant DC-DC stages.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost PFC and high-voltage bridge leg in LLC half-bridge.

Use Value: 600 V rating and 111 mJ avalanche energy ensure reliable operation under line surges and load transients typical in datacenter environments.

Use Scenario: Output rectification and hold-up capacitor charging in -48 V telecom rectifier modules operating at 100–300 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier and auxiliary power switch in dual-active-bridge (DAB) isolated DC-DC converters.

Use Value: Low Q_rr and fast t_rr reduce reverse recovery losses by >30 % versus legacy 600 V MOSFETs, improving efficiency at partial load.

Industrial Motor Drives

Solar PV Inverters

Use Scenario: Inverter leg switching in 5–10 kW variable frequency drives for HVAC and pump control.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 3-phase inverter bridges operating up to 16 kHz PWM frequency.

Use Value: R_DS(on) = 0.155 Ω enables lower conduction loss than 650 V SiC MOSFETs in <10 kHz applications, reducing system cost.

Use Scenario: DC link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC (neutral-point-clamped) inverter topology.

Use Value: TO-247AC package and 0.8 °C/W R_thJC support 156 W dissipation with passive heatsinking, simplifying thermal design in outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	R_DS(on) = 0.135 Ω (lower), Q_g = 42 nC (higher), no specified E_AS	Lacks avalanche rating; requires external clamping in inductive switching	Prefer SIHG180N60E-GE3 where unclamped inductive stress is present
IXTH16N60L2	R_DS(on) = 0.32 Ω (higher), Q_g = 27 nC (higher), E_AS = 100 mJ (lower)	Higher conduction loss limits use to <10 A average current applications	SIHG180N60E-GE3 delivers 19 A continuous current with superior thermal resistance

Compared with STW48N60M2 and IXTH16N60L2, SIHG180N60E-GE3 offers the best balance of low R_DS(on), moderate Q_g, and certified avalanche ruggedness-making it optimal for telecom/server PFC where reliability under transient overload is critical.

Availability

SIHG180N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHG180N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SIHG180N60E-GE3 belongs to Vishay's E Series Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600 V industrial and communications power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIHG180N60E-GE3 at 100 °C case temperature?

The SIHG180N60E-GE3 has a continuous drain current rating of 12 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and ensures safe operation within its 156 W maximum power dissipation limit when mounted on an adequately sized heatsink.

Does SIHG180N60E-GE3 have a fully rated avalanche capability, and what is the test condition?

Yes, SIHG180N60E-GE3 is fully rated for single-pulse unclamped inductive switching (UIS) with E_AS = 111 mJ. The test condition is V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.8 A, per the datasheet note b. This rating confirms ruggedness in real-world inductive turn-off events.

What is the typical gate threshold voltage range for SIHG180N60E-GE3, and how does it affect drive requirements?

The SIHG180N60E-GE3 has a gate-source threshold voltage V_GS(th) ranging from 3.0 V to 5.0 V at T_J = 25 °C. This ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity-no logic-level (5 V) drive is required, simplifying compatibility with existing 12 V gate driver ICs used in industrial power supplies.

How does the body diode performance of SIHG180N60E-GE3 compare to standard 600 V MOSFETs in PFC applications?

The SIHG180N60E-GE3 features enhanced body diode characteristics: t_rr = 282 ns (typ.) and Q_rr = 3.6 μC (typ.) at 25 °C. These values are 20–30 % lower than typical prior-generation 600 V MOSFETs, directly reducing reverse recovery losses and EMI in totem-pole PFC circuits where the body diode conducts during dead-time intervals.

Is SIHG180N60E-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHG180N60E-GE3 is lead (Pb)-free and halogen-free, qualified for lead-free reflow soldering with a peak temperature of 260 °C for 10 seconds, per JEDEC J-STD-020. The TO-247AC package construction and internal die attach materials are fully compatible with standard Pb-free assembly lines used in telecom and industrial electronics manufacturing.

SIHG180N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1085 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG180N60E-GE3 FAQ

1.How can I place an order for SIHG180N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG180N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG180N60E-GE3 reliable?

The price and inventory of SIHG180N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG180N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG180N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG180N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG180N60E-GE3?

SIHG180N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG180N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG180N60E-GE3?

For technical support, including SIHG180N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG180N60E-GE3 requirements.

6.How does Aetrix verify that SIHG180N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG180N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG180N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG180N60E-GE3?

All SIHG180N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG180N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG180N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHG180N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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