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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG20N50C-E3

Name: SIHG20N50C-E3
Brand: Vishay Siliconix
SKU: SIHG20N50C-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG20N50C-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG20N50C-E3.pdf

Description:: MOSFET N-CH 500V 20A TO247AC

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Product details

Overview

SIHG20N50C-E3 from Vishay Siliconix is a 500 V, 20 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.270 Ω at V_GS = 10 V, Q_g = 76 nC, and 100 % avalanche tested for ruggedness in high-voltage switching applications such as AC-DC PFC stages and industrial motor drives.

For engineers reviewing the SIHG20N50C-E3 datasheet, SIHG20N50C-E3 pinout, SIHG20N50C-E3 application, or SIHG20N50C-E3 equivalent, key selection criteria include its 361 mJ single-pulse avalanche energy, dv/dt ruggedness of 5 V/ns, low R_DS(on) × Q_g figure-of-merit, and thermal resistance R_thJC = 0.5 °C/W - all critical for high-reliability 500 V hard-switched topologies.

Technical Context

This device employs planar vertical DMOS technology optimized for high-voltage, medium-current switching with fast body diode recovery (t_rr = 503 ns, Q_rr = 6.7 μC) and improved gate charge distribution (Q_gd/Q_g ≈ 45 %). Its V_GS(th) range of 3.0–5.0 V ensures robust noise immunity in noisy industrial environments.

The MOSFET supports unclamped inductive switching up to I_AS = 17 A with E_AS = 361 mJ, and operates across T_J = –55 to +150 °C. Its R_thJC = 0.5 °C/W enables 250 W continuous power dissipation at T_C = 25 °C without derating, while C_iss = 2942 pF and C_oss = 360 pF support predictable snubber design in flyback and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Maximum blocking voltage compatible with 400 V AC mains-derived DC bus with margin
R_DS(on) @ V_GS = 10 V	0.270 Ω - Conduction loss of ≤ 108 W at 20 A DC, enabling efficient operation in 1–3 kW SMPS
Q_g	76 nC - Gate drive energy requirement dictating driver strength and switching loss trade-off
E_AS	361 mJ - Avalanche capability sufficient for 250 V, 17 A inductive turn-off without external clamping
R_thJC	0.5 °C/W - Enables direct heatsink mounting with minimal thermal interface resistance for high-power density
t_rr / Q_rr	503 ns / 6.7 μC - Fast body diode recovery reduces cross-conduction losses in synchronous rectification and half-bridge ZVS
I_D @ T_C = 100 °C	11 A - Continuous current rating at elevated case temperature, defining thermal design envelope

Pinout & Package

SIHG20N50C-E3 uses the TO-247AC package with isolated drain tab, standard lead assignment, and industry-compatible mechanical footprint per JEDEC outline. Thermal pad contour is optional; mold flash ≤ 0.127 mm per side.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	High-impedance input requiring <21 nC gate charge to fully enhance; sensitive to ESD and ringing
2 (Drain)	Main current output terminal	Internally connected to metal tab; electrically tied to heatsink - requires isolation if heatsink is grounded
3 (Source)	Reference and return path	Common node for gate drive return and load current return; defines local ground reference for driver
4 (Drain)	Secondary drain connection	Redundant drain terminal for lower inductance and higher current handling; paralleled with Pin 2 internally

Key Features

Feature	Design Value
Low R_DS(on) × Q_g	Optimizes conduction + switching loss balance for 50–200 kHz hard-switched converters
100 % avalanche tested	Guarantees single-pulse ruggedness up to 361 mJ without parameter shift or failure
dv/dt ruggedness	Rated for 5 V/ns - prevents false turn-on during high dV/dt transients in bridge configurations
Improved t_rr/Q_rr	Reduces reverse recovery losses by >30 % vs. legacy 500 V MOSFETs, lowering diode heating in freewheeling paths
High peak current capability	IDM = 80 A pulse rating supports surge currents in motor start-up and inrush limiting circuits

Applications

Industrial Motor Drives	Server PSU PFC Stages
Use Scenario: Three-phase inverter stage driving 1–5 kW induction motors in variable-frequency drives. IC Role / Device Role / Timing Role: High-side/low-side switching element in IGBT replacement topology, operating at 8–16 kHz PWM frequency. Use Value: 500 V rating and 361 mJ E_AS enable reliable operation under motor regeneration spikes without snubber circuits.	Use Scenario: Boost switch in active PFC front-end of 1U/2U server power supplies (80 PLUS Titanium). IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost converter, switching at 65–100 kHz. Use Value: Low Q_g and optimized C_iss/C_oss ratio reduce switching losses and improve efficiency above 96 % at full load.
Solar Microinverters	EV Onboard Chargers
Use Scenario: DC-AC H-bridge switching stage in single-phase microinverters (250–350 W per unit). IC Role / Device Role / Timing Role: Half-bridge leg switch handling bidirectional current flow with body diode conduction during dead-time. Use Value: Fast t_rr = 503 ns and low Q_rr minimize reverse recovery losses and EMI generation during zero-crossing transitions.	Use Scenario: Primary-side switch in dual-active-bridge (DAB) isolated DC-DC stage of 3.3–6.6 kW OBCs. IC Role / Device Role / Timing Role: Hard-switched or phase-shifted ZVS switch operating at 100–250 kHz with high dv/dt stress. Use Value: 5 V/ns dv/dt rating and 150 °C max junction temperature ensure stable operation under high-frequency, high-temperature automotive conditions.

Industrial Motor Drives

Server PSU PFC Stages

Use Scenario: Three-phase inverter stage driving 1–5 kW induction motors in variable-frequency drives.

IC Role / Device Role / Timing Role: High-side/low-side switching element in IGBT replacement topology, operating at 8–16 kHz PWM frequency.

Use Value: 500 V rating and 361 mJ E_AS enable reliable operation under motor regeneration spikes without snubber circuits.

Use Scenario: Boost switch in active PFC front-end of 1U/2U server power supplies (80 PLUS Titanium).

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost converter, switching at 65–100 kHz.

Use Value: Low Q_g and optimized C_iss/C_oss ratio reduce switching losses and improve efficiency above 96 % at full load.

Solar Microinverters

EV Onboard Chargers

Use Scenario: DC-AC H-bridge switching stage in single-phase microinverters (250–350 W per unit).

IC Role / Device Role / Timing Role: Half-bridge leg switch handling bidirectional current flow with body diode conduction during dead-time.

Use Value: Fast t_rr = 503 ns and low Q_rr minimize reverse recovery losses and EMI generation during zero-crossing transitions.

Use Scenario: Primary-side switch in dual-active-bridge (DAB) isolated DC-DC stage of 3.3–6.6 kW OBCs.

IC Role / Device Role / Timing Role: Hard-switched or phase-shifted ZVS switch operating at 100–250 kHz with high dv/dt stress.

Use Value: 5 V/ns dv/dt rating and 150 °C max junction temperature ensure stable operation under high-frequency, high-temperature automotive conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK50Z	R_DS(on) = 0.30 Ω, Q_g = 85 nC, E_AS = 280 mJ, TO-247 package	Lower avalanche energy and higher gate charge increase risk of failure under severe inductive transients	Acceptable where system-level clamping exists and switching frequency ≤ 60 kHz
IXTH20N50L	R_DS(on) = 0.28 Ω, Q_g = 68 nC, E_AS = 320 mJ, TO-247 package	Lower Q_g improves switching efficiency but reduced E_AS limits unclamped inductive robustness	Preferred for high-frequency, low-loss designs where avalanche stress is mitigated externally

Compared with STW20NK50Z and IXTH20N50L, SIHG20N50C-E3 delivers superior avalanche ruggedness (361 mJ) and balanced R_DS(on) × Q_g, making it optimal for unclamped inductive loads and high-reliability industrial systems where transient immunity is non-negotiable.

Availability

SIHG20N50C-E3 is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, and solar microinverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from qualified manufacturing facilities.

Supply support for SIHG20N50C-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The SIHG20N50C-E3 belongs to Vishay's high-voltage Power MOSFET product line, engineered for demanding industrial, computing, and renewable energy applications where avalanche capability, thermal performance, and consistent parametric stability are essential.

FAQ

What is the maximum continuous drain current for SIHG20N50C-E3 at 100 °C case temperature?

The SIHG20N50C-E3 supports a continuous drain current of 11 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value is derived from thermal derating of the 20 A rating at 25 °C using the linear derating factor of 1.8 W/°C and accounts for junction temperature limits up to 150 °C. Designers must verify heatsink performance to maintain T_C ≤ 100 °C under full-load conditions.

Does SIHG20N50C-E3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHG20N50C-E3 is 100 % avalanche tested per Vishay's qualification standards, with a guaranteed single-pulse avalanche energy (E_AS) of 361 mJ under defined test conditions (V_DD = 50 V, starting T_J = 25 °C, L = 2.5 mH, R_g = 25 Ω, I_AS = 17 A). This testing ensures each unit meets minimum ruggedness requirements before shipment, critical for reliability in inductive switching applications.

What is the gate threshold voltage range for SIHG20N50C-E3, and why does it matter for drive circuit design?

The gate threshold voltage (V_GS(th)) for SIHG20N50C-E3 is specified from 3.0 V to 5.0 V at T_J = 25 °C. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise margin against spurious turn-on from coupling or ground bounce. Designers must ensure gate drive voltage exceeds 5 V to guarantee full enhancement and minimize R_DS(on) variation across temperature and unit-to-unit spread.

How does the body diode performance of SIHG20N50C-E3 compare to standard 500 V MOSFETs?

The SIHG20N50C-E3 features improved body diode characteristics including t_rr = 503 ns and Q_rr = 6.7 μC at T_J = 25 °C, IF = IS, di/dt = 100 A/μs, VR = 35 V - significantly faster than typical 500 V MOSFETs. This reduces reverse recovery losses and associated EMI in half-bridge and synchronous rectifier topologies, directly improving system efficiency and thermal management.

Is SIHG20N50C-E3 suitable for use in automotive onboard chargers (OBCs)?

SIHG20N50C-E3 is qualified for industrial temperature range (–55 to +150 °C) and widely used in EV onboard chargers, particularly in DAB and CLLC isolated DC-DC stages. While not AEC-Q101 qualified, its 150 °C max junction temperature, 5 V/ns dv/dt rating, and robust avalanche performance meet functional safety requirements when implemented with appropriate derating and system-level validation per ISO 26262.

SIHG20N50C-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 270mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 76 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2942 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG20N50C-E3 FAQ

1.How can I place an order for SIHG20N50C-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG20N50C-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG20N50C-E3 reliable?

The price and inventory of SIHG20N50C-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG20N50C-E3 is usually 5 days.

3.What payment methods are accepted for SIHG20N50C-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG20N50C-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG20N50C-E3?

SIHG20N50C-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG20N50C-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG20N50C-E3?

For technical support, including SIHG20N50C-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG20N50C-E3 requirements.

6.How does Aetrix verify that SIHG20N50C-E3 is sourced from the original manufacturer or authorized distributors?

All SIHG20N50C-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG20N50C-E3 meets industry standards.

7.What is the process for return or replacement of SIHG20N50C-E3?

All SIHG20N50C-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG20N50C-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG20N50C-E3 part is unused and in its original packaging.

Return procedure for SIHG20N50C-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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