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Vishay Siliconix SIHG20N50E-GE3
- Part No.:
- SIHG20N50E-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHG20N50E-GE3.pdf
- Description:
- MOSFET N-CH 500V 19A TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:485
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Product details
Overview
SIHG20N50E-GE3 from Vishay Siliconix is a 500 V, 19 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring RDS(on) = 0.184 Ω at VGS = 10 V, Qg = 92 nC, and avalanche-rated (EAS = 204 mJ). It delivers low conduction and switching losses for hard-switched PFC and two-switch forward converters in ATX power supplies.
For engineers reviewing the SIHG20N50E-GE3 datasheet, SIHG20N50E-GE3 pinout, SIHG20N50E-GE3 application, or SIHG20N50E-GE3 equivalent, this page provides verified electrical parameters, thermal resistance (RthJC = 0.7 °C/W), body diode recovery (trr = 293 ns), gate charge waveform details, and real-world SMPS design context - all confirmed from Vishay's official S15-0278-Rev. B datasheet.
Technical Context
This MOSFET employs planar high-voltage silicon technology optimized for high-voltage, medium-current switching in continuous conduction mode (CCM) PFC stages and clamped topologies. Its low Ciss (1640 pF) and Coss (87 pF) reduce capacitive switching loss, while the 0.184 Ω RDS(on) balances conduction efficiency with gate drive capability.
The device integrates an intrinsic body diode rated for 19 A continuous source-drain current (IS) and 293 ns reverse recovery time (trr) at 25 °C, enabling use in synchronous rectification and flyback configurations where diode recovery behavior critically impacts EMI and efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports 400 V DC bus designs with 25 % margin for voltage transients in industrial and computing SMPS |
| RDS(on) max | 0.184 Ω at VGS = 10 V - enables ≤ 35 W conduction loss at 19 A, suitable for 300–500 W PFC stages |
| Qg max | 92 nC - determines gate driver power requirement and switching speed; compatible with standard 1–2 A peak drivers |
| EAS | 204 mJ - ensures robustness against unclamped inductive switching events in flyback and forward converters |
| trr | 293 ns - limits diode reverse recovery spike amplitude and duration, reducing EMI filter burden |
| RthJC | 0.7 °C/W - allows ≥ 179 W power dissipation with ≤ 125 °C junction rise over case, supporting forced-air-cooled heatsinks |
| ID cont @ TC = 100 °C | 12 A - defines usable current derating in compact enclosures without active cooling |
Pinout & Package
SIHG20N50E-GE3 uses the TO-247AC package - a through-hole, high-power plastic outline with isolated drain tab and three leads. Thermal resistance from junction to case is 0.7 °C/W, and the package supports >179 W continuous dissipation with proper heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level gate drive; threshold voltage range 2.0–4.0 V ensures reliable turn-on with standard PWM controllers |
| 2 (Drain) | High-side power terminal | Connected to primary-side high-voltage rail (e.g., 400 V DC bus); electrically tied to metal tab for thermal path |
| 3 (Source) | Reference node / return path | Serves as local ground reference for gate drive; carries full load current and must be routed with low-inductance layout |
| Tab (Drain) | Thermal & electrical connection | Exposed drain metallization provides primary thermal path to heatsink; must be electrically isolated from PCB ground unless circuit topology permits |
Key Features
| Feature | Design Value |
|---|---|
| Low figure-of-merit (RDS(on) × Qg) | 16.9 Ω·nC - improves trade-off between conduction and switching loss, critical for high-frequency PFC operation |
| Avalanche energy rating (EAS) | 204 mJ - eliminates need for external snubbers in inductive-load switching applications like motor drives and flyback |
| Body diode trr and Qrr | 293 ns / 4.0 μC - enables clean commutation in quasi-resonant and discontinuous conduction mode topologies |
| Low input capacitance (Ciss) | 1640 pF - reduces gate drive power and improves noise immunity in high-dV/dt environments (70 V/ns max) |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912 |
Applications
| PC Silver Box / ATX Power Supplies | Two-Stage LED Lighting |
|---|---|
|
Use Scenario: High-efficiency active PFC stage operating in continuous conduction mode (CCM) with 400 V DC output. IC Role / Device Role: Main switching transistor handling 10–19 A peak current at 50–100 kHz. Use Value: Low RDS(on) minimizes conduction loss across wide load range; avalanche rating protects against line surge-induced inductive kickback. |
Use Scenario: Secondary-side high-voltage buck or flyback controller driving 40–80 V LED strings in commercial lighting fixtures. IC Role / Device Role: Primary-side switch regulating constant current output with tight thermal constraints. Use Value: 0.7 °C/W RthJC enables compact heatsink integration; fast body diode recovery suppresses ringing during demagnetization. |
| Power Factor Correction (PFC) | Two-Switch Forward Converter |
|
Use Scenario: Boost-type front-end converter in industrial AC-DC power modules requiring >98 % efficiency at full load. IC Role / Device Role: High-side switch in interleaved or single-phase boost topology with 500 V blocking capability. Use Value: 500 V VDS rating accommodates 400 V nominal bus + 25 % safety margin; low Qg enables efficient 100+ kHz operation. |
Use Scenario: Isolated DC-DC conversion for telecom or server auxiliary rails using two active switches and a center-tapped transformer. IC Role / Device Role: One of two synchronized main switches handling bidirectional voltage stress up to 500 V. Use Value: Robust dV/dt immunity (70 V/ns) prevents false turn-on during transformer reset; avalanche rating tolerates mismatched switch timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM50FD | RDS(on) = 0.22 Ω (higher), Qg = 75 nC (lower), TO-220FP package, no avalanche rating | Limited to lower-power (<250 W) PFC due to higher on-resistance and lack of UIS rating | Prefer SIHG20N50E-GE3 for 300+ W designs requiring avalanche ruggedness and TO-247 thermal performance |
| IXTH20N50L | RDS(on) = 0.20 Ω, Qg = 85 nC, TO-247 package, avalanche rated (EAS = 190 mJ) | Slightly lower avalanche energy and higher RDS(on); similar thermal resistance (0.75 °C/W) | SIHG20N50E-GE3 offers 7 % lower RDS(on) and 7 % higher EAS, making it preferable for thermally constrained or transient-heavy PFC stages |
Compared with STP20NM50FD and IXTH20N50L, SIHG20N50E-GE3 delivers the lowest RDS(on) among 500 V/20 A-class devices in TO-247, combined with industry-leading EAS and verified CCM PFC performance - directly enabling higher efficiency and smaller heatsinks in 300–500 W computing and lighting power supplies.
Availability
SIHG20N50E-GE3 is available at Aetrix Electronics and suitable for PC silver box power supplies, two-stage LED lighting systems, and industrial switch-mode power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIHG20N50E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SIHG20N50E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-voltage switching in computing, lighting, and industrial SMPS - emphasizing low FOM, avalanche ruggedness, and thermal robustness.
FAQ
What is the maximum continuous drain current for SIHG20N50E-GE3 at 100 °C case temperature?
The maximum continuous drain current for SIHG20N50E-GE3 is 12 A when the case temperature (TC) is 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations under sustained operation and must be validated with actual heatsink performance and ambient conditions. SIHG20N50E-GE3 maintains safe operation within its 179 W power dissipation limit only when junction temperature remains ≤150 °C.
Does SIHG20N50E-GE3 have avalanche capability, and how is it rated?
Yes, SIHG20N50E-GE3 is avalanche energy rated with a single-pulse unclamped inductive switching (UIS) capability of 204 mJ, tested per note b in the datasheet (VDD = 50 V, L = 28.2 mH, Rg = 25 Ω, IAS = 3.8 A). This rating confirms ruggedness against transient overvoltage events in hard-switched topologies. SIHG20N50E-GE3 does not specify repetitive avalanche rating, so system design must avoid repeated UIS stress.
What is the gate threshold voltage range for SIHG20N50E-GE3, and why does it matter?
The gate-source threshold voltage (VGS(th)) for SIHG20N50E-GE3 is specified from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing accidental activation from noise or leakage. SIHG20N50E-GE3 requires ≥4.0 V to guarantee full enhancement across process and temperature extremes, making 5 V logic-level control insufficient for guaranteed conduction.
How does the body diode performance of SIHG20N50E-GE3 impact flyback converter design?
SIHG20N50E-GE3 features a body diode with reverse recovery time (trr) of 293 ns and reverse recovery charge (Qrr) of 4.0 μC at 25 °C, enabling predictable commutation in flyback snubberless or quasi-resonant designs. These values directly affect EMI generation and switching loss during demagnetization. SIHG20N50E-GE3's low Qrr reduces peak diode current stress and allows tighter layout without excessive snubbing, unlike devices with >500 ns trr.
Is SIHG20N50E-GE3 RoHS-compliant and halogen-free?
Yes, SIHG20N50E-GE3 is lead (Pb)-free and halogen-free, compliant with the EU RoHS Directive 2011/65/EU. Vishay documents this per its material categorization standard (www.vishay.com/doc?99912), and the "-GE3" suffix explicitly denotes green, halogen-free packaging. SIHG20N50E-GE3 meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for TO-247AC assembly processes.
SIHG20N50E-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 184mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 92 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1640 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 179W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
SIHG20N50E-GE3 FAQ
1.How can I place an order for SIHG20N50E-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHG20N50E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHG20N50E-GE3 reliable?
The price and inventory of SIHG20N50E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG20N50E-GE3 is usually 5 days.
3.What payment methods are accepted for SIHG20N50E-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG20N50E-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHG20N50E-GE3?
SIHG20N50E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHG20N50E-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHG20N50E-GE3?
For technical support, including SIHG20N50E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG20N50E-GE3 requirements.
6.How does Aetrix verify that SIHG20N50E-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHG20N50E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG20N50E-GE3 meets industry standards.
7.What is the process for return or replacement of SIHG20N50E-GE3?
All SIHG20N50E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG20N50E-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHG20N50E-GE3 part is unused and in its original packaging.
Return procedure for SIHG20N50E-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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