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Vishay Siliconix SIHG21N60EF-GE3
- Part No.:
- SIHG21N60EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHG21N60EF-GE3.pdf
- Description:
- MOSFET N-CH 600V 21A TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:397
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Product details
Overview
SIHG21N60EF-GE3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring ultra-low gate charge (56–84 nC), fast body diode (trr = 135–270 ns), and avalanche-rated ruggedness (EAS = 367 mJ). It serves as a primary switching device in high-efficiency LLC resonant and phase-shifted bridge converters for telecom and solar inverters.
For engineers reviewing the SIHG21N60EF-GE3 datasheet, SIHG21N60EF-GE3 pinout, SIHG21N60EF-GE3 application, or SIHG21N60EF-GE3 equivalent, key selection criteria include RDS(on) max of 0.176 Ω at 10 V, Qg of 84 nC, fast reverse recovery (Qrr = 0.76–1.52 μC), TO-247AC thermal performance (RthJC = 0.55 °C/W), and UIS-rated operation under unclamped inductive switching.
Technical Context
This MOSFET employs Vishay's EF-series fast-body-diode technology to reduce reverse recovery charge (Qrr) and peak reverse recovery current (IRRM), enabling ZVS-capable topologies like LLC and phase-shifted full-bridge. Its low Ciss (2030 pF typ.) and Crss (5 pF typ.) support high-frequency switching with minimal Miller effect.
The device integrates an optimized integral body diode with dV/dt immunity up to 50 V/ns and is rated for repetitive unclamped inductive switching (UIS) at TJ = 150 °C. Gate threshold voltage (2.0–4.0 V) ensures robust noise margin while maintaining compatibility with standard 10 V gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in PV inverters and telecom rectifiers |
| RDS(on) max | 0.176 Ω at VGS = 10 V, ID = 11 A - enables <1.9 W conduction loss at 11 A, critical for thermally constrained SMPS |
| Qg max | 84 nC - reduces gate drive power and allows use of lower-cost, lower-current gate drivers in high-frequency designs |
| trr max | 270 ns - minimizes dead-time losses and EMI in ZVS topologies by limiting reverse recovery tail current |
| EAS | 367 mJ - guarantees single-pulse avalanche survivability during fault conditions without external snubbers |
| RthJC | 0.55 °C/W - enables >200 W continuous power dissipation with standard heatsink mounting in TO-247AC |
| Qrr max | 1.52 μC - directly lowers switching loss and stress on synchronous rectifiers in bidirectional converters |
Pinout & Package
SIHG21N60EF-GE3 is housed in a TO-247AC package with isolated drain tab, optimized for high-voltage isolation and thermal transfer. The plastic body conforms to JEDEC TO-247 outline with facility-code variants (9/Y/N); all versions share identical lead assignment and thermal pad geometry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level drive; low input capacitance (Ciss = 2030 pF) eases driver sizing |
| 2 (Drain) | High-side power terminal | Connected to HV DC bus; electrically isolated metal tab enables direct heatsink mounting with creepage ≥8 mm |
| 3 (Source) | Power return & reference node | Serves as local ground reference for gate drive; low-inductance layout critical for minimizing VGS ringing |
| 4 (Drain) | Secondary drain connection | Parallel path to Pin 2 for reduced source inductance and improved current sharing in paralleled configurations |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode (EF series) | Reduces trr by >40 % vs. standard Si MOSFETs, enabling reliable ZVS in LLC converters above 200 kHz |
| Low Qg × RDS(on) FOM | 14.8 Ω·nC - balances switching and conduction loss for optimal efficiency in 100–500 kHz SMPS |
| Avalanche energy rating | 367 mJ single-pulse - eliminates need for external clamping in UPS and welder output stages |
| Low Crss (5 pF typ.) | Minimizes Miller-induced turn-on risk during high dV/dt transitions in half-bridge leg commutation |
| Lead (Pb)-free & Halogen-free | Complies with RoHS 2011/65/EU and Vishay's Green Standard (Doc. #99912) |
Applications
| Telecom Power Supply | Solar PV Inverter |
|---|---|
Use Scenario: Primary-side switch in 3.5 kW server PSU using phase-shifted full-bridge topology with ZVS. IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC input; operates at 100–200 kHz with soft-switching. Use Value: Low Qrr (0.76 μC typ.) and fast trr (135 ns) minimize body diode conduction loss and enable consistent ZVS across load range. | Use Scenario: DC-link switch in string-level 5 kW PV inverter with three-level NPC topology. IC Role / Device Role / Timing Role: Medium-voltage switching device in high-leg position; blocks 600 V with 150 °C junction capability. Use Value: Avalanche rating (367 mJ) withstands line transients during grid faults; RthJC = 0.55 °C/W sustains 21 A continuous at TC = 100 °C. |
| HID Lighting Ballast | Industrial Battery Charger |
Use Scenario: Resonant switch in 400 W electronic HID ballast operating at 250 kHz. IC Role / Device Role / Timing Role: Half-bridge upper switch driving LCC resonant tank; requires fast diode recovery to avoid shoot-through. Use Value: Reverse recovery dV/dt rating of 50 V/ns prevents false turn-on during diode commutation; low Coss (105 pF) stabilizes resonant frequency. | Use Scenario: Primary switch in 3 kW industrial Li-ion battery charger using asymmetric half-bridge. IC Role / Device Role / Timing Role: Main power switch handling 500 V DC input; subjected to repeated short-circuit events during battery connect/disconnect. Use Value: UIS rating ensures survival during 53 A pulsed fault currents; low RDS(on) (0.153 Ω typ.) limits thermal rise during constant-current charging phase. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 600 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW22N60M2 | RDS(on) = 0.19 Ω (higher), Qg = 65 nC (lower), trr = 190 ns (slower), no UIS rating | Lower switching loss but higher conduction loss; unsuitable for avalanche-prone industrial chargers | Prefer for cost-sensitive, low-stress ATX PSUs where avalanche immunity is not required |
| IXFH21N60P | RDS(on) = 0.18 Ω, Qg = 95 nC (higher), trr = 220 ns, UIS rated (280 mJ) | Higher gate drive loss and slower recovery; lower avalanche energy than SIHG21N60EF-GE3 | Acceptable for legacy designs with existing IXYS gate drivers; avoid in new ZVS-critical LLC layouts |
Compared with STW22N60M2 and IXFH21N60P, SIHG21N60EF-GE3 delivers superior ZVS capability via lowest Qrr and fastest trr, highest UIS energy for fault resilience, and best FOM for combined conduction/switching optimization in high-reliability telecom and solar systems.
Availability
SIHG21N60EF-GE3 is available at Aetrix Electronics and suitable for telecom power supplies, solar PV inverters, and industrial battery chargers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Vishay-authorized channels.
Supply support for SIHG21N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.
The EF Series power MOSFETs, including SIHG21N60EF-GE3, were designed specifically for high-frequency, high-efficiency resonant and soft-switching power converters used in renewable energy, telecom infrastructure, and industrial power systems.
FAQ
What is the maximum continuous drain current rating for SIHG21N60EF-GE3 at 100 °C case temperature?
The SIHG21N60EF-GE3 has a continuous drain current rating of 14 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and ensures safe operation within its 0.55 °C/W junction-to-case thermal resistance. At TC = 25 °C, the rating increases to 21 A, matching its nominal current class. Engineers must verify heatsink design to maintain TC ≤ 100 °C under full-load conditions.
Does SIHG21N60EF-GE3 support gate drive voltages below 10 V, and what is its gate threshold range?
Yes, SIHG21N60EF-GE3 operates with gate drive voltages down to 5 V, though its RDS(on) specification is guaranteed only at VGS = 10 V. Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V at TJ = 25 °C, providing sufficient noise margin against spurious turn-on in noisy industrial environments. For reliable enhancement-mode operation, gate drive should exceed 4.0 V minimum under worst-case conditions.
How does the fast body diode in SIHG21N60EF-GE3 improve performance in LLC resonant converters?
The fast body diode in SIHG21N60EF-GE3 reduces reverse recovery time (trr = 135–270 ns) and charge (Qrr = 0.76–1.52 μC), which directly lowers switching losses and improves ZVS consistency in LLC converters. This enables stable zero-voltage switching across wide load ranges, reduces EMI from diode snap-off, and avoids cross-conduction risks during dead-time intervals-critical for achieving >96 % efficiency at 200–500 kHz operation.
Is SIHG21N60EF-GE3 suitable for use in parallel configurations, and what layout considerations apply?
Yes, SIHG21N60EF-GE3 supports paralleling due to its positive temperature coefficient of RDS(on) and dual-drain-pin configuration (Pins 2 and 4). To ensure current sharing, layout must minimize source inductance imbalance: use symmetrical gate routing with individual 9.1 Ω gate resistors, Kelvin-source connections, and matched thermal paths. Avoid shared source traces; instead, implement star-point grounding at the PCB source plane.
What is the significance of the "-GE3" suffix in SIHG21N60EF-GE3?
The "-GE3" suffix indicates that SIHG21N60EF-GE3 is a lead (Pb)-free and halogen-free version compliant with RoHS Directive 2011/65/EU and Vishay's Green Standard (Document #99912). It uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 requirements. This suffix distinguishes it from legacy Pb-bearing variants and confirms suitability for environmentally regulated end equipment.
SIHG21N60EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 176mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 84 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2030 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 227W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
SIHG21N60EF-GE3 FAQ
1.How can I place an order for SIHG21N60EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHG21N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHG21N60EF-GE3 reliable?
The price and inventory of SIHG21N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG21N60EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHG21N60EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG21N60EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHG21N60EF-GE3?
SIHG21N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHG21N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHG21N60EF-GE3?
For technical support, including SIHG21N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG21N60EF-GE3 requirements.
6.How does Aetrix verify that SIHG21N60EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHG21N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG21N60EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHG21N60EF-GE3?
All SIHG21N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG21N60EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHG21N60EF-GE3 part is unused and in its original packaging.
Return procedure for SIHG21N60EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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