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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG21N65EF-GE3

Name: SIHG21N65EF-GE3
Brand: Vishay Siliconix
SKU: SIHG21N65EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG21N65EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG21N65EF-GE3.pdf

Description:: MOSFET N-CH 650V 21A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHG21N65EF-GE3 from Vishay Siliconix is a 650 V, 21 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring fast body diode, 0.15 Ω R_DS(on) at 10 V_GS, 71 nC typical Q_g, and 367 mJ single-pulse avalanche energy - designed for high-efficiency, high-frequency switch-mode power supplies including PV inverters and phase-shifted bridge topologies.

For engineers reviewing the SIHG21N65EF-GE3 datasheet, SIHG21N65EF-GE3 pinout, SIHG21N65EF-GE3 application, or SIHG21N65EF-GE3 equivalent, key selection criteria include its low Q_rr (1.2 μC), fast t_rr (160 ns), reduced C_oss(er) (84 pF), and rated dV/dt capability (37 V/ns at 125 °C) for ZVS and LCC resonant converter designs.

Technical Context

This device implements Vishay's E-series fast-body-diode technology to minimize reverse recovery charge and time, enabling operation in zero-voltage-switching (ZVS) topologies such as phase-shifted full-bridge and LLC resonant converters. Its low Q_g/R_DS(on) figure-of-merit (FOM) and 0.5 °C/W junction-to-case thermal resistance support high-power-density designs.

The integrated body diode is characterized with I_RRM = 14 A, t_rr = 160 ns, and V_SD = 0.9–1.2 V at 11 A and 25 °C, making it suitable for synchronous rectification and bidirectional current handling without external diode supplementation in many SMPS stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports DC bus voltages up to 400 V AC input rectified systems with margin for transients and ringing
R_DS(on) max @ 10 V_GS	0.18 Ω - enables <2 W conduction loss at 11 A continuous drain current in thermally managed layouts
Q_g typ / max	71 / 106 nC - reduces gate drive power and enables use with standard 1–2 A peak gate drivers
t_rr / Q_rr	160 ns / 1.2 μC - minimizes switching losses and EMI during hard-commutated freewheeling in bridge legs
E_AS	367 mJ - provides robust unclamped inductive switching capability for reliable operation under fault conditions
R_thJC	0.5 °C/W - allows >150 W power dissipation with moderate heatsinking (e.g., 40 °C/W heatsink yields ~85 °C junction rise at 100 W)
C_oss(er)	84 pF - lowers capacitive turn-off loss and improves efficiency in high-frequency resonant applications

Pinout & Package

SIHG21N65EF-GE3 is housed in a TO-247AC package with isolated tab (Drain-connected), optimized for high-voltage isolation and thermal performance. The case outline complies with JEDEC TO-247 variation AC, featuring a 20.55 mm × 15.70 mm footprint and 15.15 mm height, with thermal pad contour optional per version.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate	High-impedance control terminal requiring <106 nC total charge; layout must minimize inductance to avoid oscillation
2 (Tab)	Drain	High-side switching node; electrically connected to metal tab - requires insulated mounting or direct heatsink connection
3 (Lead)	Source	Power return path and gate reference; must be low-inductance tie to driver ground to maintain switching integrity
4 (Lead)	Drain	Second Drain lead for enhanced current sharing and thermal spreading - paralleled internally with Pin 2

Key Features

Feature	Design Value
Fast body diode	160 ns t_rr and 1.2 μC Q_rr enable ZVS operation without external diode in half-bridge and full-bridge configurations
Low Q_g/R_DS(on) FOM	~10.6 Ω·nC - balances switching speed and conduction loss for optimal efficiency across 50–300 kHz SMPS
Avalanche-rated	367 mJ E_AS ensures ruggedness against inductive load transients and startup surges in industrial power stages
Ultra-low C_iss	2322 pF at V_DS = 100 V - reduces Miller effect and improves gate drive stability in high-dV/dt environments
Pb-free & Halogen-free	Meets RoHS Directive 2011/65/EU and Vishay's material compliance standard (doc#99912)

Applications

Solar Photovoltaic Inverters	Phase-Shifted Full-Bridge SMPS
Use Scenario: DC/AC conversion stage in string or central PV inverters operating at 600–1000 V DC link with transformer-isolated topology. IC Role / Device Role / Timing Role: High-side and low-side switching element in primary-side H-bridge, handling 21 A RMS current at 16–100 kHz switching frequency. Use Value: Fast body diode and low Q_rr reduce dead-time losses and improve ZVS window, increasing inverter efficiency by ≥0.4% at full load.	Use Scenario: Primary-side power switches in telecom/server PSUs using phase-shifted full-bridge architecture with soft switching. IC Role / Device Role / Timing Role: Main switching transistor controlling energy transfer via variable phase shift between leg pairs; operates with 50–200 ns dead time. Use Value: 37 V/ns dV/dt rating and low C_oss(er) ensure reliable ZVS across line/load range, minimizing voltage overshoot and EMI generation.
HID Lighting Ballasts	Industrial Battery Chargers
Use Scenario: Resonant half-bridge driver for high-intensity discharge lamps requiring precise current regulation and hot restrike capability. IC Role / Device Role / Timing Role: Switching element in LCC resonant tank, sustaining 10–20 kHz square-wave excitation with bidirectional current flow through body diode. Use Value: Low V_SD (0.9–1.2 V) and controlled I_RRM (14 A) reduce heating during lamp ignition and sustain stable arc without external diode.	Use Scenario: Isolated DC/DC stage in 3–5 kW industrial battery chargers for EVs or energy storage, operating with wide input (200–800 V) and constant-current output. IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge or three-level NPC topology, managing high dv/dt transitions during modulation. Use Value: 0.5 °C/W R_thJC and 208 W P_D allow sustained 15 A continuous operation with passive heatsinking, reducing thermal derating overhead.

Solar Photovoltaic Inverters

Phase-Shifted Full-Bridge SMPS

Use Scenario: DC/AC conversion stage in string or central PV inverters operating at 600–1000 V DC link with transformer-isolated topology.

IC Role / Device Role / Timing Role: High-side and low-side switching element in primary-side H-bridge, handling 21 A RMS current at 16–100 kHz switching frequency.

Use Value: Fast body diode and low Q_rr reduce dead-time losses and improve ZVS window, increasing inverter efficiency by ≥0.4% at full load.

Use Scenario: Primary-side power switches in telecom/server PSUs using phase-shifted full-bridge architecture with soft switching.

IC Role / Device Role / Timing Role: Main switching transistor controlling energy transfer via variable phase shift between leg pairs; operates with 50–200 ns dead time.

Use Value: 37 V/ns dV/dt rating and low C_oss(er) ensure reliable ZVS across line/load range, minimizing voltage overshoot and EMI generation.

HID Lighting Ballasts

Industrial Battery Chargers

Use Scenario: Resonant half-bridge driver for high-intensity discharge lamps requiring precise current regulation and hot restrike capability.

IC Role / Device Role / Timing Role: Switching element in LCC resonant tank, sustaining 10–20 kHz square-wave excitation with bidirectional current flow through body diode.

Use Value: Low V_SD (0.9–1.2 V) and controlled I_RRM (14 A) reduce heating during lamp ignition and sustain stable arc without external diode.

Use Scenario: Isolated DC/DC stage in 3–5 kW industrial battery chargers for EVs or energy storage, operating with wide input (200–800 V) and constant-current output.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge or three-level NPC topology, managing high dv/dt transitions during modulation.

Use Value: 0.5 °C/W R_thJC and 208 W P_D allow sustained 15 A continuous operation with passive heatsinking, reducing thermal derating overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW21N65M5	650 V, 21 A, R_DS(on) = 0.19 Ω, Q_g = 85 nC, t_rr = 220 ns - higher Q_rr and slower recovery than SIHG21N65EF-GE3	Less suited for ZVS above 100 kHz due to higher body diode losses; better for hard-switched PFC stages	Prefer SIHG21N65EF-GE3 where t_rr < 180 ns and Q_rr < 1.5 μC are required for resonant topologies
IXFH20N65X2	650 V, 20 A, R_DS(on) = 0.22 Ω, Q_g = 52 nC, t_rr = 140 ns - lower Q_g but higher R_DS(on) and no UIS rating	Optimized for ultra-fast switching but lacks avalanche ruggedness; unsuitable for unclamped inductive loads	Select SIHG21N65EF-GE3 when system-level reliability demands E_AS ≥ 300 mJ and field-service robustness

Compared with STW21N65M5 and IXFH20N65X2, SIHG21N65EF-GE3 delivers superior ZVS efficiency via lowest Q_rr and highest E_AS, while maintaining competitive Q_g - making it the preferred choice for solar inverters and phase-shifted bridges where body diode performance and fault tolerance are critical.

Availability

SIHG21N65EF-GE3 is available at Aetrix Electronics and suitable for solar photovoltaic inverters, phase-shifted full-bridge power supplies, HID lighting ballasts, and industrial battery chargers requiring stable component supply and long-term production continuity.

Supply support for SIHG21N65EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SIHG21N65EF-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-frequency, high-efficiency switch-mode power conversion in renewable energy, industrial, and telecom infrastructure applications.

FAQ

What is the maximum continuous drain current rating for SIHG21N65EF-GE3 at 100 °C case temperature?

The SIHG21N65EF-GE3 has a continuous drain current rating of 13 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 21 A rating at 25 °C case temperature, based on its 0.5 °C/W R_thJC and SOA limits. Designers must verify PCB copper area and heatsink interface to sustain this current reliably in end equipment.

Does SIHG21N65EF-GE3 have a fully rated avalanche capability, and what is its EAS value?

Yes, SIHG21N65EF-GE3 is fully rated for single-pulse avalanche with E_AS = 367 mJ under standardized test conditions (V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 5.1 A). This rating is confirmed in the Absolute Maximum Ratings section and supports robust operation during inductive turn-off transients in motor drives and SMPS without external snubbers.

What is the gate threshold voltage range for SIHG21N65EF-GE3, and how does it affect drive circuit design?

The gate-source threshold voltage V_GS(th) for SIHG21N65EF-GE3 is specified from 2 V to 4 V at T_J = 25 °C. This relatively tight range ensures consistent turn-on behavior across production lots. Drive circuits must supply ≥10 V to guarantee full enhancement and low R_DS(on); logic-level gate drivers are insufficient, and negative turn-off bias (e.g., –5 V) is recommended to prevent spurious turn-on in high-dV/dt environments.

How is the TO-247AC package of SIHG21N65EF-GE3 configured for thermal and electrical isolation?

The SIHG21N65EF-GE3 uses a TO-247AC package with Drain connected to the metal tab and two separate Drain leads (Pins 2 and 4), enabling flexible mounting: the tab may be electrically tied to heatsink (requiring isolation hardware) or left floating with only lead-based connections. Its R_thJC = 0.5 °C/W is measured from junction to the tab, and thermal pad contour is optional per package version - critical for achieving rated power dissipation.

Can SIHG21N65EF-GE3 replace older 600 V MOSFETs like IRFP460 in existing designs?

SIHG21N65EF-GE3 is not a direct drop-in replacement for IRFP460 due to differences in pinout (IRFP460 uses TO-247AD with Gate-Drain-Source order vs. SIHG21N65EF-GE3's Gate-Drain-Source-Drain), higher V_DS rating (650 V vs. 500 V), and significantly lower Q_g (71 nC vs. 180 nC). Layout revision and gate driver re-optimization are required; however, its superior FOM and body diode performance justify redesign in efficiency-critical upgrades.

SIHG21N65EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 106 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2322 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG21N65EF-GE3 FAQ

1.How can I place an order for SIHG21N65EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG21N65EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG21N65EF-GE3 reliable?

The price and inventory of SIHG21N65EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG21N65EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG21N65EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG21N65EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG21N65EF-GE3?

SIHG21N65EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG21N65EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG21N65EF-GE3?

For technical support, including SIHG21N65EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG21N65EF-GE3 requirements.

6.How does Aetrix verify that SIHG21N65EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG21N65EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG21N65EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG21N65EF-GE3?

All SIHG21N65EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG21N65EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG21N65EF-GE3 part is unused and in its original packaging.

Return procedure for SIHG21N65EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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