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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG21N80AEF-GE3

Name: SIHG21N80AEF-GE3
Brand: Vishay Siliconix
SKU: SIHG21N80AEF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG21N80AEF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG21N80AEF-GE3.pdf

Description:: E SERIES POWER MOSFET WITH FAST

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Product details

Overview

SIHG21N80AEF-GE3 from Vishay Siliconix is an 800 V, 16.3 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 0.220 Ω R_DS(on) at V_GS = 10 V, 71 nC total gate charge, and fast body diode with 128 ns reverse recovery time. It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHG21N80AEF-GE3 datasheet, SIHG21N80AEF-GE3 pinout, SIHG21N80AEF-GE3 application, or SIHG21N80AEF-GE3 equivalent, key selection criteria include its 800 V blocking rating, avalanche-rated 127 mJ E_AS, Co(er) = 44 pF for reduced switching loss, and TO-247AC thermal performance (R_thJC = 0.7 °C/W).

Technical Context

This device uses planar stripe silicon technology optimized for high-voltage hard-switching applications. Its low Q_g/R_DS(on) figure-of-merit (FOM) and reduced C_oss(er) enable efficient operation in continuous conduction mode (CCM) PFC boost stages and primary-side SMPS switches up to 100 kHz.

The integrated fast-recovery body diode supports synchronous rectification and ZVS-assisted topologies, with confirmed trr = 128 ns (typ.) and Q_rr = 0.8 μC at T_J = 25 °C - critical for minimizing commutation loss in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 650 V AC line-derived DC bus with 23% margin for transient overvoltage in industrial PFC designs
R_DS(on) typ	0.220 Ω at V_GS = 10 V - enables ≤2.0 W conduction loss at 11 A RMS in 3.3 kW PFC stage
Q_g max	71 nC - determines gate drive power requirement (~1.4 W at 100 kHz, 15 V swing)
E_AS	127 mJ - ensures robustness against unclamped inductive switching events in motor drive H-bridges
trr	128 ns (typ.) - limits diode reverse recovery current overshoot in phase-shifted full-bridge converters
R_thJC	0.7 °C/W - allows 179 W dissipation with ≤125 °C case-to-junction rise, supporting forced-air-cooled 2 kW designs
C_oss(er)	44 pF - reduces turn-off energy loss (E_off ∝ V² × C_oss(er)) in high-frequency hard-switched topologies

Pinout & Package

TO-247AC package with isolated drain tab (pins 2 and 4 both connected to drain), standard 3-pin layout optimized for high-current, high-voltage PCB mounting and heatsink interface. Thermal pad contour optional per JEDEC TO-247 variation AC.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level drive; requires <1 Ω gate resistance to limit dv/dt-induced false turn-on
2 (Drain)	High-side power node	Connected to drain metallization and exposed tab; must be electrically isolated from heatsink unless using insulating pad
3 (Source)	Reference node	Serves as return path for load current and gate drive loop; low-inductance routing essential for EMI control
4 (Drain)	Secondary drain connection	Redundant drain terminal for parallel high-current paths; improves current sharing and thermal spreading in TO-247AC footprint

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	15.6 Ω·nC - directly reduces combined conduction + switching loss in 65–100 kHz PFC stages
Avalanche energy rated	127 mJ single-pulse - eliminates need for external snubbers in inductive load switching circuits
Fast body diode	trr = 128 ns, Q_rr = 0.8 μC - enables use in synchronous rectifier and resonant LLC secondary-side designs
Reduced C_oss(er)	44 pF - cuts turn-off loss by ~35% vs. legacy 800 V MOSFETs with same R_DS(on)
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc# 99912

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost converter operating in continuous conduction mode (CCM) at 65–100 kHz, handling 3.3 kW input from 200–240 V AC mains. IC Role / Device Role / Timing Role: Primary switching device in active PFC front-end; operates with fixed-frequency PWM control and current-mode feedback. Use Value: 0.220 Ω R_DS(on) and 44 pF C_oss(er) deliver >98.2% efficiency at full load, reducing thermal stress on heatsink and enabling compact 1U form factor.	Use Scenario: High-density 48 V output rectifier module fed from 380 V DC bus in distributed telecom power architecture. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; synchronized with secondary-side synchronous rectifiers. Use Value: 128 ns trr and low Q_rr minimize shoot-through risk during zero-voltage switching transitions, improving reliability under dynamic load steps.
Industrial PV Inverter DC-DC Stage	Induction Heating Half-Bridge
Use Scenario: Isolated DC-DC stage stepping down 1000 V PV array voltage to 400 V intermediate bus in string inverters. IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) topology; driven with phase-shifted PWM at 50–80 kHz. Use Value: 800 V V_DS rating provides 25% safety margin over 1000 V DC link, while 127 mJ E_AS withstands grid fault transients without failure.	Use Scenario: Resonant half-bridge operating at 20–50 kHz driving series-resonant tank for metal heating in industrial furnaces. IC Role / Device Role / Timing Role: Switching element subjected to high di/dt (>100 A/μs) and repetitive avalanche stress during zero-current switching. Use Value: Confirmed UIS capability and fast body diode allow reliable operation without external freewheeling diodes, simplifying gate drive and reducing BOM count.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost converter operating in continuous conduction mode (CCM) at 65–100 kHz, handling 3.3 kW input from 200–240 V AC mains.

IC Role / Device Role / Timing Role: Primary switching device in active PFC front-end; operates with fixed-frequency PWM control and current-mode feedback.

Use Value: 0.220 Ω R_DS(on) and 44 pF C_oss(er) deliver >98.2% efficiency at full load, reducing thermal stress on heatsink and enabling compact 1U form factor.

Use Scenario: High-density 48 V output rectifier module fed from 380 V DC bus in distributed telecom power architecture.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; synchronized with secondary-side synchronous rectifiers.

Use Value: 128 ns trr and low Q_rr minimize shoot-through risk during zero-voltage switching transitions, improving reliability under dynamic load steps.

Industrial PV Inverter DC-DC Stage

Induction Heating Half-Bridge

Use Scenario: Isolated DC-DC stage stepping down 1000 V PV array voltage to 400 V intermediate bus in string inverters.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) topology; driven with phase-shifted PWM at 50–80 kHz.

Use Value: 800 V V_DS rating provides 25% safety margin over 1000 V DC link, while 127 mJ E_AS withstands grid fault transients without failure.

Use Scenario: Resonant half-bridge operating at 20–50 kHz driving series-resonant tank for metal heating in industrial furnaces.

IC Role / Device Role / Timing Role: Switching element subjected to high di/dt (>100 A/μs) and repetitive avalanche stress during zero-current switching.

Use Value: Confirmed UIS capability and fast body diode allow reliable operation without external freewheeling diodes, simplifying gate drive and reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK80Z	800 V, 20 A, R_DS(on) = 0.33 Ω, Q_g = 65 nC, TO-247 long leads	Higher R_DS(on) increases conduction loss by ~50%; lower Q_g eases gate drive but lacks Co(er) optimization	Prefer SIHG21N80AEF-GE3 where efficiency >98% is required; STW20NK80Z acceptable for cost-sensitive 1.5 kW designs
IXFH20N80X	800 V, 20 A, R_DS(on) = 0.32 Ω, Q_g = 52 nC, TO-247 short leads	Lower Q_g but higher R_DS(on); no published C_oss(er) or trr data - limits high-frequency PFC use	SIHG21N80AEF-GE3 preferred for PFC and ZVS topologies; IXFH20N80X suitable for hard-switched flyback or forward converters

Compared with STW20NK80Z and IXFH20N80X, SIHG21N80AEF-GE3 offers the lowest R_DS(on) × Q_g FOM and verified fast body diode parameters - making it optimal for high-efficiency, high-frequency PFC and resonant converters where both conduction and switching losses must be minimized simultaneously.

Availability

SIHG21N80AEF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifier modules, and industrial PV inverters requiring stable component supply and long-term production continuity.

Supply support for SIHG21N80AEF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The EF Series power MOSFETs, including SIHG21N80AEF-GE3, were designed specifically for high-voltage, high-efficiency switch-mode power conversion in server, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SIHG21N80AEF-GE3 at 100 °C case temperature?

The SIHG21N80AEF-GE3 has a continuous drain current rating of 10.3 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and ensures safe operation within the 150 °C maximum junction temperature. The SIHG21N80AEF-GE3 must be mounted on a heatsink with sufficient thermal resistance to maintain T_C ≤ 100 °C under full-load conditions.

Does SIHG21N80AEF-GE3 support avalanche operation, and what is its rated single-pulse energy?

Yes, SIHG21N80AEF-GE3 is avalanche energy rated with a guaranteed single-pulse unclamped inductive switching (UIS) energy of 127 mJ under test conditions of V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.0 A. This rating confirms robustness against transient overcurrent events in motor drives and inductive load switching. The SIHG21N80AEF-GE3 is not intended for repetitive avalanche operation.

What is the typical reverse recovery time (trr) of the body diode in SIHG21N80AEF-GE3, and under what conditions is it measured?

The typical reverse recovery time (t_rr) of the integral body diode in SIHG21N80AEF-GE3 is 128 ns, measured at T_J = 25 °C with I_F = I_S = 11 A, dI/dt = 100 A/μs, and V_R = 400 V. This parameter is critical for minimizing commutation loss in bridge topologies. The SIHG21N80AEF-GE3 datasheet also specifies Q_rr = 0.8 μC (typ.), confirming fast recovery behavior suitable for high-frequency ZVS applications.

Can SIHG21N80AEF-GE3 be used with 5 V gate drive, or is it strictly a 10 V-enhancement device?

SIHG21N80AEF-GE3 is specified as a 10 V gate drive device, with V_GS(th) ranging from 2.0 V to 4.0 V and R_DS(on) guaranteed only at V_GS = 10 V. While it may conduct with 5 V gate voltage, R_DS(on) rises significantly above 0.250 Ω (max), increasing conduction loss and thermal stress. For reliable operation, the SIHG21N80AEF-GE3 requires a stable 10 V ±10 % gate drive referenced to source.

What is the thermal resistance from junction to case (R_thJC) for SIHG21N80AEF-GE3, and how does it impact heatsink design?

The maximum junction-to-case thermal resistance (R_thJC) for SIHG21N80AEF-GE3 is 0.7 °C/W, enabling 179 W maximum power dissipation at T_C = 25 °C. This low value demands careful heatsink selection: for example, to maintain T_J ≤ 150 °C at 100 W dissipation with T_C = 85 °C, the heatsink-to-ambient resistance must be ≤ 0.65 °C/W. The SIHG21N80AEF-GE3 TO-247AC package requires direct thermal interface to the heatsink via the drain tab.

SIHG21N80AEF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-247-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 16.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 250mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1511 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG21N80AEF-GE3 FAQ

1.How can I place an order for SIHG21N80AEF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG21N80AEF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG21N80AEF-GE3 reliable?

The price and inventory of SIHG21N80AEF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG21N80AEF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG21N80AEF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG21N80AEF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG21N80AEF-GE3?

SIHG21N80AEF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG21N80AEF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG21N80AEF-GE3?

For technical support, including SIHG21N80AEF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG21N80AEF-GE3 requirements.

6.How does Aetrix verify that SIHG21N80AEF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG21N80AEF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG21N80AEF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG21N80AEF-GE3?

All SIHG21N80AEF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG21N80AEF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG21N80AEF-GE3 part is unused and in its original packaging.

Return procedure for SIHG21N80AEF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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