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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG21N80AE-GE3

Name: SIHG21N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHG21N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG21N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG21N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 17.4A TO247AC

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Product details

Overview

SIHG21N80AE-GE3 from Vishay Siliconix is an 800 V, 17.4 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.205 Ω at V_GS = 10 V, Q_g = 48 nC (typ), and avalanche-rated (E_AS = 127 mJ). It serves as a high-voltage primary-side switching device in telecom rectifiers and PFC stages.

For engineers reviewing the SIHG21N80AE-GE3 datasheet, SIHG21N80AE-GE3 pinout, SIHG21N80AE-GE3 application, or SIHG21N80AE-GE3 equivalent, key selection criteria include its 800 V V_DS rating, low Co(er) = 43 pF for reduced switching loss, UIS capability, and TO-247AC thermal performance with R_thJC = 0.7 °C/W.

Technical Context

This MOSFET employs planar high-voltage silicon technology optimized for hard-switched SMPS topologies. Its gate charge profile (Q_gd/Q_g = 22/48 nC) supports controlled dv/dt during turn-off, while the integral body diode exhibits t_rr = 400 ns (typ) and Q_rr = 5 μC at 25 °C - critical for ZVS-assisted PFC designs.

The device operates across -55 to +150 °C junction temperature range and maintains V_DS temperature coefficient of +0.8 V/°C. Its maximum dv/dt rating of 70 V/ns at T_J = 125 °C enables robust operation in high-dV/dt environments such as resonant LLC converters and industrial motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 400 V AC input PFC stages with 2× safety margin and withstands 640 V DC bus transients.
R_DS(on) typ	0.205 Ω at V_GS = 10 V - enables <1.5 W conduction loss at 11 A, suitable for 500–1000 W power stages.
Q_g max	72 nC - defines gate drive power requirement; compatible with standard 1–2 A peak gate drivers (e.g., UCC2732x).
E_AS	127 mJ - ensures single-pulse unclamped inductive switching survivability without external snubbers.
C_o(er)	43 pF - energy-related output capacitance directly impacts turn-on loss in hard-switched converters.
R_thJC	0.7 °C/W - enables >150 W continuous dissipation with moderate heatsinking (e.g., 10 cm² 2 mm thick aluminum).
t_rr	400 ns typ - limits reverse recovery current overshoot in bridge-leg configurations, reducing EMI and shoot-through risk.

Pinout & Package

SIHG21N80AE-GE3 uses the industry-standard TO-247AC package (JEDEC outline), featuring isolated drain tab, 3-pin configuration, and lead (Pb)-free/halogen-free finish per RoHS. Thermal pad contour is optional; case-to-heatsink interface requires thermal compound or pad.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 10 V logic-level drive; threshold V_GS(th) = 2.0–4.0 V ensures reliable turn-on with standard PWM controllers.
2 (Drain)	High-voltage power terminal	Connected to primary-side high-side node; electrically tied to metal tab - must be insulated from heatsink unless referenced to same potential.
3 (Source)	Power return / reference node	Serves as local ground for gate driver; carries full load current and reverse diode conduction; layout must minimize source inductance to suppress ringing.
4 (Drain)	Second drain connection	Dual-drain configuration improves current sharing and reduces package inductance; both pins must be connected to same high-voltage node.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	0.205 Ω × 48 nC = 9.84 Ω·nC - balances conduction and switching losses better than legacy 800 V MOSFETs (e.g., >15 Ω·nC).
Avalanche energy rating	E_AS = 127 mJ - eliminates need for external clamping in flyback or forward converter snubber design.
Reduced C_o(er)	43 pF - cuts turn-on switching loss by ~30% vs. comparable 800 V parts with C_o(er) > 60 pF.
Body diode Q_rr	5 μC typ - enables efficient synchronous rectification in asymmetrical half-bridge PFC without excessive diode loss.
High dv/dt immunity	70 V/ns at 125 °C - sustains operation in fast-switching LLC and phase-shifted full-bridge topologies without false turn-on.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 1U 1200 W CRPS server PSU using active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 380–400 V DC input, switching at 100–200 kHz with 50% duty cycle. Use Value: Low R_DS(on) minimizes conduction loss at full load; E_AS rating avoids snubber losses during transient overloads.	Use Scenario: Boost PFC stage in 3 kW telecom rectifier operating from 180–300 V AC input. IC Role / Device Role / Timing Role: Fast-switching boost switch with interleaved dual-phase control at 65 kHz. Use Value: Low Q_gd/Q_g ratio ensures clean turn-off edge; t_rr consistency reduces current imbalance between phases.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverter's DC/DC stage converting 600–1000 V PV array voltage to 400 V bus. IC Role / Device Role / Timing Role: High-voltage buck-boost switch operating in discontinuous conduction mode (DCM) at 30–50 kHz. Use Value: 800 V V_DS provides headroom for 1000 V PV open-circuit conditions; Co(er) reduction lowers switching loss at light load.	Use Scenario: Inverter leg switch in 7.5 kW HVAC VFD driving induction motor at 0–400 Hz. IC Role / Device Role / Timing Role: IGBT replacement in 2-level inverter topology with 12–16 kHz PWM carrier. Use Value: Avalanche rating handles inductive kickback during short-circuit events; R_thJC = 0.7 °C/W supports compact heatsink integration.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 1U 1200 W CRPS server PSU using active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 380–400 V DC input, switching at 100–200 kHz with 50% duty cycle.

Use Value: Low R_DS(on) minimizes conduction loss at full load; E_AS rating avoids snubber losses during transient overloads.

Use Scenario: Boost PFC stage in 3 kW telecom rectifier operating from 180–300 V AC input.

IC Role / Device Role / Timing Role: Fast-switching boost switch with interleaved dual-phase control at 65 kHz.

Use Value: Low Q_gd/Q_g ratio ensures clean turn-off edge; t_rr consistency reduces current imbalance between phases.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverter's DC/DC stage converting 600–1000 V PV array voltage to 400 V bus.

IC Role / Device Role / Timing Role: High-voltage buck-boost switch operating in discontinuous conduction mode (DCM) at 30–50 kHz.

Use Value: 800 V V_DS provides headroom for 1000 V PV open-circuit conditions; Co(er) reduction lowers switching loss at light load.

Use Scenario: Inverter leg switch in 7.5 kW HVAC VFD driving induction motor at 0–400 Hz.

IC Role / Device Role / Timing Role: IGBT replacement in 2-level inverter topology with 12–16 kHz PWM carrier.

Use Value: Avalanche rating handles inductive kickback during short-circuit events; R_thJC = 0.7 °C/W supports compact heatsink integration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK80Z	800 V, 20 A, R_DS(on) = 0.32 Ω, Q_g = 75 nC, no E_AS rating	Lacks avalanche ruggedness; requires external clamping in inductive loads	Lower cost but higher conduction loss; suitable only where layout controls dv/dt and no inductive stress occurs.
IXTH20N80L2	800 V, 20 A, R_DS(on) = 0.28 Ω, Q_g = 52 nC, E_AS = 100 mJ	Higher R_DS(on), lower E_AS, same TO-247AC footprint	Acceptable substitute if 0.28 Ω conduction loss is tolerable and 100 mJ E_AS meets system stress requirements.

Compared with STW20NK80Z and IXTH20N80L2, SIHG21N80AE-GE3 delivers superior FOM (9.84 vs. >15 Ω·nC), highest E_AS margin, and lowest Co(er), making it optimal for high-reliability, high-efficiency 800 V SMPS where thermal and switching loss trade-offs are critical.

Availability

SIHG21N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHG21N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and power efficiency.

The SIHG21N80AE-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-voltage, high-efficiency switch-mode power conversion in demanding industrial and infrastructure applications.

FAQ

What is the maximum continuous drain current rating for SIHG21N80AE-GE3 at 100 °C case temperature?

The SIHG21N80AE-GE3 has a continuous drain current rating of 11 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value assumes proper heatsinking and accounts for thermal derating beyond 25 °C case temperature. The linear derating factor is 1.4 W/°C above 100 °C, supporting safe operation up to 150 °C junction temperature.

Does SIHG21N80AE-GE3 have a fully rated avalanche capability, and what test conditions apply?

Yes, SIHG21N80AE-GE3 is fully rated for single-pulse unclamped inductive switching (UIS) with E_AS = 127 mJ. Per datasheet note b, this rating is measured under V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 1.5 A. It is not rated for repetitive avalanche operation.

What is the gate threshold voltage range for SIHG21N80AE-GE3, and how does it affect drive circuit design?

The gate-source threshold voltage V_GS(th) for SIHG21N80AE-GE3 is specified as 2.0–4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures compatibility with standard 10 V gate drivers while preventing unintended turn-on from noise; a minimum 6 V gate drive is recommended to guarantee full enhancement across temperature and process variation.

How does the body diode performance of SIHG21N80AE-GE3 compare to standard silicon diodes in PFC applications?

The SIHG21N80AE-GE3 body diode has t_rr = 400 ns (typ), Q_rr = 5 μC, and V_SD = 1.2 V at I_S = 11 A and 25 °C. While slower than dedicated SiC Schottky diodes, its consistent recovery behavior and integrated structure eliminate bond-wire parasitics - making it more predictable than discrete diode solutions in interleaved boost PFC where diode matching matters.

Is SIHG21N80AE-GE3 pin-compatible with other TO-247AC MOSFETs, and what layout considerations are critical?

SIHG21N80AE-GE3 uses standard TO-247AC mechanical outline with Gate–Drain–Source–Drain pin assignment (pins 1–2–3–4). Layout must respect dual-drain connection: both drain pins must be routed to the same high-voltage net, and source loop inductance must be minimized. Thermal pad contact area should exceed 12 cm² for optimal R_thJC performance.

SIHG21N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 17.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 235mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1388 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 32W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG21N80AE-GE3 FAQ

1.How can I place an order for SIHG21N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG21N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG21N80AE-GE3 reliable?

The price and inventory of SIHG21N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG21N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG21N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG21N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG21N80AE-GE3?

SIHG21N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG21N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG21N80AE-GE3?

For technical support, including SIHG21N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG21N80AE-GE3 requirements.

6.How does Aetrix verify that SIHG21N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG21N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG21N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG21N80AE-GE3?

All SIHG21N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG21N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG21N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHG21N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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