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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG22N50D-GE3

Name: SIHG22N50D-GE3
Brand: Vishay Siliconix
SKU: SIHG22N50D-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG22N50D-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG22N50D-GE3.pdf

Description:: MOSFET N-CH 500V 22A TO247AC

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Product details

Overview

SIHG22N50D-GE3 from Vishay Siliconix is a 500 V, 22 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.230 Ω at V_GS = 10 V, Q_g = 98 nC, and avalanche-rated (E_AS = 139 mJ). It serves as a high-voltage switching element in offline SMPS, motor drives, and induction heating circuits.

For engineers reviewing the SIHG22N50D-GE3 datasheet, SIHG22N50D-GE3 pinout, SIHG22N50D-GE3 application, or SIHG22N50D-GE3 equivalent, this page delivers verified electrical specs, thermal resistance (R_thJC = 0.4 °C/W), body diode recovery (t_rr = 384 ns), gate charge profile, and real-world use context for industrial power conversion design.

Technical Context

This device employs planar V-groove silicon technology optimized for high-voltage hard-switching applications. Its low C_iss (1938 pF) and minimized Q_gd/Q_g ratio (22/98) reduce Miller-induced turn-off delay and improve switching controllability under high dV/dt conditions up to 24 V/ns.

The integrated body diode is rated for continuous 22 A source-drain current and exhibits controlled reverse recovery (Q_rr = 4.7 μC, I_RRM = 23 A), enabling reliable operation in freewheeling and synchronous rectification roles without external diode supplementation in many 500 V-class topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Supports 400 V DC bus designs with 25 % margin for line surges and ringing.
R_DS(on) max	0.230 Ω at V_GS = 10 V - Enables <1.2 W conduction loss at 22 A, suitable for thermally constrained heatsinks.
Q_g max	98 nC - Determines gate driver power requirement; compatible with standard 1–2 A peak gate drivers.
E_AS	139 mJ - Confirmed single-pulse unclamped inductive switching capability without failure.
t_r/t_f	42/40 ns - Fast edge rates support >100 kHz hard-switched converters with reduced switching loss.
R_thJC	0.4 °C/W - Allows direct mounting to heatsink; junction-to-case thermal path dominates system cooling.
I_D continuous	22 A at T_C = 25 °C - Rated for full-load operation only when case temperature is actively maintained ≤25 °C.

Pinout & Package

TO-247AC package with isolated drain tab, 3-pin configuration, and industry-standard mechanical footprint (D = 20.55 mm, E = 15.70 mm, L = 15.15 mm). Thermal pad on drain enables low-impedance heat transfer to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 10 V logic-level drive; ±30 V absolute max rating protects against transient overvoltage.
2 (Drain)	Main power output terminal	Connected to high-side switch node; electrically tied to metal tab for thermal and electrical grounding.
3 (Source)	Power return and reference	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery current.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	22.5 Ω·nC - Balances conduction and switching losses for optimal efficiency in 50–200 kHz SMPS.
Avalanche energy rating	139 mJ - Eliminates need for external snubbers in inductive load switching where voltage overshoot occurs.
High body diode ruggedness	Rated ISM = 88 A pulsed - Withstands high di/dt commutation stress during motor phase reversal or welder duty cycles.
Fast reverse recovery	t_rr = 384 ns, Q_rr = 4.7 μC - Reduces diode-related switching loss and EMI in bridge-leg configurations.
Low C_iss/C_oss ratio	1938 pF / 169 pF - Improves gate drive efficiency and reduces Miller plateau duration during turn-on.

Applications

Server SMPS	Induction Heating
Use Scenario: Primary-side switch in 1–3 kW telecom rectifier modules operating at 100 kHz with 380–400 V DC bus. IC Role / Device Role / Timing Role: High-voltage hard-switched power transistor handling full input power conversion. Use Value: 500 V rating accommodates 400 V bus + 25 % surge margin; 0.230 Ω R_DS(on) limits conduction loss to <1.2 W at full load.	Use Scenario: Half-bridge switch in 2–5 kW domestic or light-industrial induction cooktops. IC Role / Device Role / Timing Role: High-current, high-dV/dt switching element subjected to repetitive 20–50 kHz resonant transitions. Use Value: 24 V/ns dV/dt rating and 139 mJ E_AS ensure robustness against voltage transients during zero-voltage switching transitions.
Motor Drive Inverter	Battery Charger Output Stage
Use Scenario: Upper-leg switch in 3-phase inverter driving 3–7.5 HP AC induction motors in HVAC compressors. IC Role / Device Role / Timing Role: High-side switching device conducting up to 22 A RMS with body diode freewheeling during PWM dead-time. Use Value: Body diode t_rr = 384 ns and Q_rr = 4.7 μC minimize shoot-through risk and reduce diode switching loss during commutation.	Use Scenario: Switching element in LLC resonant DC–DC stage of 1–2 kW EV on-board charger converting 400 V battery to 12–48 V auxiliary supply. IC Role / Device Role / Timing Role: Synchronous rectifier or primary-side switch depending on topology, requiring high reliability under repeated thermal cycling. Use Value: R_thJC = 0.4 °C/W enables stable thermal management across 10,000+ hour lifetime; Pb-free/ halogen-free (GE3) meets automotive RoHS requirements.

Server SMPS

Induction Heating

Use Scenario: Primary-side switch in 1–3 kW telecom rectifier modules operating at 100 kHz with 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage hard-switched power transistor handling full input power conversion.

Use Value: 500 V rating accommodates 400 V bus + 25 % surge margin; 0.230 Ω R_DS(on) limits conduction loss to <1.2 W at full load.

Use Scenario: Half-bridge switch in 2–5 kW domestic or light-industrial induction cooktops.

IC Role / Device Role / Timing Role: High-current, high-dV/dt switching element subjected to repetitive 20–50 kHz resonant transitions.

Use Value: 24 V/ns dV/dt rating and 139 mJ E_AS ensure robustness against voltage transients during zero-voltage switching transitions.

Motor Drive Inverter

Battery Charger Output Stage

Use Scenario: Upper-leg switch in 3-phase inverter driving 3–7.5 HP AC induction motors in HVAC compressors.

IC Role / Device Role / Timing Role: High-side switching device conducting up to 22 A RMS with body diode freewheeling during PWM dead-time.

Use Value: Body diode t_rr = 384 ns and Q_rr = 4.7 μC minimize shoot-through risk and reduce diode switching loss during commutation.

Use Scenario: Switching element in LLC resonant DC–DC stage of 1–2 kW EV on-board charger converting 400 V battery to 12–48 V auxiliary supply.

IC Role / Device Role / Timing Role: Synchronous rectifier or primary-side switch depending on topology, requiring high reliability under repeated thermal cycling.

Use Value: R_thJC = 0.4 °C/W enables stable thermal management across 10,000+ hour lifetime; Pb-free/ halogen-free (GE3) meets automotive RoHS requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NM50N	500 V, 22 A, R_DS(on) = 0.22 Ω, Q_g = 72 nC, TO-220FP package	Lower Q_g but higher R_thJA (62 °C/W); unsuitable for >100 W continuous conduction without forced air	Prefer for space-constrained, lower-power (<150 W), cost-sensitive designs where thermal mass is limited.
IXFH22N50P	500 V, 22 A, R_DS(on) = 0.24 Ω, Q_g = 85 nC, TO-247 package, no halogen-free option	Similar thermal performance (R_thJC = 0.45 °C/W) but lacks GE3 halogen-free compliance	Acceptable where RoHS exemption applies or halogen content is not regulated in end equipment.

Compared with STP22NM50N and IXFH22N50P, SIHG22N50D-GE3 offers superior avalanche ruggedness (139 mJ vs. 95 mJ and 110 mJ), tighter Q_gd/Q_g ratio for improved hard-switching control, and certified halogen-free construction-making it preferred for industrial-grade, long-lifetime, high-reliability 500 V power stages.

Availability

SIHG22N50D-GE3 is available at Aetrix Electronics and suitable for server SMPS, induction heating systems, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHG22N50D-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The D Series Power MOSFETs-including SIHG22N50D-GE3-are engineered for high-voltage, high-current industrial switching applications demanding avalanche tolerance, fast body diode recovery, and stable R_DS(on) over temperature.

FAQ

What is the maximum continuous drain current rating for SIHG22N50D-GE3 at 100 °C case temperature?

The SIHG22N50D-GE3 supports 14 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and must be validated against actual heatsink performance and ambient conditions in the final layout. The SIHG22N50D-GE3 datasheet specifies linear derating beyond 100 °C using the 2.5 W/°C factor.

Does SIHG22N50D-GE3 have a fully rated body diode for bidirectional current flow?

Yes, the SIHG22N50D-GE3 integrates a rugged body diode rated for 22 A continuous source-drain current (I_S) and 88 A pulsed (I_SM). Its reverse recovery time (t_rr = 384 ns) and charge (Q_rr = 4.7 μC) are fully characterized, enabling use in freewheeling, synchronous rectification, and half-bridge topologies without external diode supplementation-provided dI/dt and voltage slew rate remain within datasheet limits.

What is the gate threshold voltage range for SIHG22N50D-GE3, and how does it affect drive circuit design?

The SIHG22N50D-GE3 has a gate threshold voltage (V_GS(th)) range of 3–5 V at T_J = 25 °C. This ensures reliable turn-on with standard 10 V gate drive while avoiding unintended conduction from noise or leakage. Designers must maintain ≥6 V gate drive margin above V_GS(th) max to guarantee full enhancement; the SIHG22N50D-GE3 is not a logic-level device and requires dedicated gate driver circuitry.

How does the avalanche energy rating of SIHG22N50D-GE3 impact system reliability in inductive switching applications?

The SIHG22N50D-GE3 is rated for 139 mJ single-pulse avalanche energy (E_AS), verified per JEDEC JESD24-1. This allows the device to safely absorb inductive energy during overvoltage events-such as transformer leakage spikes or motor back-EMF-without catastrophic failure. System designers can eliminate or simplify snubber networks in flyback, forward, and resonant converters, improving efficiency and reducing component count while maintaining reliability in SIHG22N50D-GE3-based power stages.

Is SIHG22N50D-GE3 compliant with lead-free and halogen-free manufacturing standards?

Yes, the "-GE3" suffix explicitly denotes lead (Pb)-free and halogen-free construction per Vishay's material compliance standards. SIHG22N50D-GE3 meets JEDEC JS709B and IPC-1752A requirements, with bromine and chlorine content below 900 ppm each. This makes the SIHG22N50D-GE3 suitable for automotive, industrial, and consumer applications subject to strict environmental regulations including RoHS 3 and China RoHS II.

SIHG22N50D-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 230mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 98 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1938 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 312W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG22N50D-GE3 FAQ

1.How can I place an order for SIHG22N50D-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG22N50D-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG22N50D-GE3 reliable?

The price and inventory of SIHG22N50D-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG22N50D-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG22N50D-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG22N50D-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG22N50D-GE3?

SIHG22N50D-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG22N50D-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG22N50D-GE3?

For technical support, including SIHG22N50D-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG22N50D-GE3 requirements.

6.How does Aetrix verify that SIHG22N50D-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG22N50D-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG22N50D-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG22N50D-GE3?

All SIHG22N50D-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG22N50D-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG22N50D-GE3 part is unused and in its original packaging.

Return procedure for SIHG22N50D-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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