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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG22N60AE-GE3

Name: SIHG22N60AE-GE3
Brand: Vishay Siliconix
SKU: SIHG22N60AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG22N60AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG22N60AE-GE3.pdf

Description:: MOSFET N-CH 600V 20A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHG22N60AE-GE3 from Vishay Siliconix is a 600 V, 22 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.156 Ω (typ. at V_GS = 10 V), Q_g = 48 nC (typ.), and avalanche-rated (E_AS = 204 mJ). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom rectifiers and solar inverters.

For engineers reviewing the SIHG22N60AE-GE3 datasheet, SIHG22N60AE-GE3 pinout, SIHG22N60AE-GE3 application, or SIHG22N60AE-GE3 equivalent, key selection criteria include its 600 V V_DS, 0.156 Ω R_DS(on), 48 nC gate charge, 204 mJ unclamped inductive switching capability, and TO-247AC thermal performance with R_thJC = 0.7 °C/W.

Technical Context

This device uses planar stripe silicon technology optimized for high-voltage hard-switching applications. Its low C_iss (1451 pF) and ultra-low Q_gd/Q_g ratio (25/48 nC) reduce Miller-induced turn-off delay and improve controllability under high dV/dt conditions up to 70 V/ns.

The integrated body diode supports synchronous rectification and freewheeling in bridge topologies, with t_rr = 319 ns (typ.) and Q_rr = 4.9 μC at 25 °C - enabling stable operation in continuous conduction mode (CCM) PFC without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in industrial and solar PV inverters
R_DS(on) max	0.180 Ω - ensures ≤ 2.2 W conduction loss at 11 A, enabling compact heatsink design in 1–3 kW power supplies
Q_g typ.	48 nC - reduces gate drive power requirement and enables use of lower-power drivers like UCC27531 in isolated gate circuits
E_AS	204 mJ - allows reliable operation under unclamped inductive switching stress without external clamping in PFC boost stages
R_thJC	0.7 °C/W - enables >150 W dissipation with <100 °C junction rise above case, supporting high-power density layouts
t_r/t_f	33/21 ns (typ.) - supports >200 kHz switching in hard-switched topologies while maintaining EMI compliance
I_D (T_C = 100 °C)	12 A - defines usable current limit in thermally constrained enclosures such as server PSU modules

Pinout & Package

SIHG22N60AE-GE3 is housed in a TO-247AC package with exposed drain thermal pad, rated for 179 W maximum power dissipation at T_C = 25 °C. The package complies with JEDEC TO-247 outline AC variant and features 3 leads: Gate (pin 1), Drain (pins 2 & 4), Source (pin 3).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 10 V logic-level drive; requires <1 μF local bypass to suppress ringing during fast transitions
2 & 4 (Drain)	Main high-side current path	Electrically tied to thermal pad; must be connected to primary-side ground plane for optimal thermal and EMI performance
3 (Source)	Reference node for gate drive	Serves as return path for gate current and sense point for current monitoring; layout must minimize inductance to avoid false turn-on

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	7.46 Ω·nC - directly improves efficiency in both conduction and switching domains versus competing 600 V MOSFETs
Avalanche energy rating	204 mJ single-pulse - eliminates need for external RCD clamp in boost PFC, reducing BOM count and board area
Ultra-low Q_gd	25 nC - minimizes Miller plateau duration, improving noise immunity and enabling tighter dead-time control
Low C_iss	1451 pF - reduces gate drive current demand and eases EMI filter design in high-frequency SMPS
Body diode t_rr	319 ns (typ.) - enables clean commutation in LLC resonant converters without reverse recovery spikes

Applications

Telecom Rectifier Module	Solar PV Inverter Boost Stage
Use Scenario: High-efficiency 3.3 kW front-end rectifier converting -48 V DC input to 380 V DC bus in telecom base station power systems. IC Role / Device Role / Timing Role: Primary switch in active clamp forward topology operating at 100–150 kHz with zero-voltage switching assistance. Use Value: 0.156 Ω R_DS(on) and 48 nC Q_g enable >96.2 % efficiency at full load while maintaining junction temperature below 125 °C with forced air cooling.	Use Scenario: Boost converter stage in string-level solar inverter handling up to 1200 V DC input from photovoltaic arrays. IC Role / Device Role / Timing Role: Main switching element in interleaved dual-phase boost circuit operating at 40–80 kHz with phase-shifted PWM. Use Value: 600 V V_DS rating and 204 mJ E_AS withstand voltage transients from lightning surges and grid faults without failure.
Industrial Motor Drive Inverter	Server PSU PFC Circuit
Use Scenario: 7.5 kW variable frequency drive for HVAC compressors requiring robust short-circuit protection and thermal stability. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in three-phase inverter leg, driven by isolated gate driver with desaturation detection. Use Value: Avalanche rating and 12 A continuous current at 100 °C case temperature support safe shutdown during motor stall events without external crowbar.	Use Scenario: Active PFC front-end in 1U 2000 W server power supply meeting 80 PLUS Titanium efficiency requirements. IC Role / Device Role / Timing Role: Critical switching component in continuous conduction mode (CCM) boost converter operating at 65 kHz with digital controller. Use Value: Low Q_gd/Q_g ratio and 319 ns body diode t_rr reduce distortion and improve THD performance across universal AC input range (90–264 VAC).

Telecom Rectifier Module

Solar PV Inverter Boost Stage

Use Scenario: High-efficiency 3.3 kW front-end rectifier converting -48 V DC input to 380 V DC bus in telecom base station power systems.

IC Role / Device Role / Timing Role: Primary switch in active clamp forward topology operating at 100–150 kHz with zero-voltage switching assistance.

Use Value: 0.156 Ω R_DS(on) and 48 nC Q_g enable >96.2 % efficiency at full load while maintaining junction temperature below 125 °C with forced air cooling.

Use Scenario: Boost converter stage in string-level solar inverter handling up to 1200 V DC input from photovoltaic arrays.

IC Role / Device Role / Timing Role: Main switching element in interleaved dual-phase boost circuit operating at 40–80 kHz with phase-shifted PWM.

Use Value: 600 V V_DS rating and 204 mJ E_AS withstand voltage transients from lightning surges and grid faults without failure.

Industrial Motor Drive Inverter

Server PSU PFC Circuit

Use Scenario: 7.5 kW variable frequency drive for HVAC compressors requiring robust short-circuit protection and thermal stability.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in three-phase inverter leg, driven by isolated gate driver with desaturation detection.

Use Value: Avalanche rating and 12 A continuous current at 100 °C case temperature support safe shutdown during motor stall events without external crowbar.

Use Scenario: Active PFC front-end in 1U 2000 W server power supply meeting 80 PLUS Titanium efficiency requirements.

IC Role / Device Role / Timing Role: Critical switching component in continuous conduction mode (CCM) boost converter operating at 65 kHz with digital controller.

Use Value: Low Q_gd/Q_g ratio and 319 ns body diode t_rr reduce distortion and improve THD performance across universal AC input range (90–264 VAC).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW22NM60ND	600 V, 22 A, R_DS(on) = 0.18 Ω, Q_g = 52 nC, TO-247 long leads	Higher gate charge increases driver loss; slightly higher R_DS(on) raises conduction loss at high ambient	Preferred where legacy STMicro design reuse is required; verify gate drive strength due to +8 % Q_g
IXTH24N60L2	600 V, 24 A, R_DS(on) = 0.165 Ω, Q_g = 58 nC, TO-247 non-isolated	Higher Q_g demands stronger gate driver; same thermal resistance but 2 A higher ID rating	Consider when margin for peak current surge is critical; accept 21 % higher gate drive power

Compared with STW22NM60ND and IXTH24N60L2, SIHG22N60AE-GE3 offers the lowest Q_g/R_DS(on) trade-off among 600 V 20–24 A MOSFETs, delivering superior efficiency in medium-power PFC and SMPS where gate drive loss dominates at >100 kHz.

Availability

SIHG22N60AE-GE3 is available at Aetrix Electronics and suitable for telecom rectifiers, solar PV inverters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for SIHG22N60AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SIHG22N60AE-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-voltage switching in server, telecom, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIHG22N60AE-GE3 at 100 °C case temperature?

The SIHG22N60AE-GE3 has a continuous drain current rating of 12 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 20 A rating at 25 °C and ensures safe operation within the 150 °C maximum junction temperature limit under realistic heatsink conditions.

Does SIHG22N60AE-GE3 support avalanche operation, and what is its rated single-pulse energy?

Yes, SIHG22N60AE-GE3 is fully avalanche-rated with a single-pulse unclamped inductive switching (UIS) energy of 204 mJ, tested per JEDEC standard JESD24-1. This rating is validated at V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.8 A - confirming robustness in boost PFC and flyback applications without external clamping.

What is the typical gate-to-source threshold voltage (V_GS(th)) range for SIHG22N60AE-GE3?

The SIHG22N60AE-GE3 has a gate-to-source threshold voltage range of 2.0 V to 4.0 V at T_J = 25 °C, measured with V_DS = V_GS and I_D = 250 μA. This standard logic-level threshold ensures compatibility with 10 V gate drivers while providing sufficient noise margin against spurious turn-on in noisy power environments.

How does the body diode performance of SIHG22N60AE-GE3 compare to standard MOSFETs in PFC applications?

The SIHG22N60AE-GE3 body diode exhibits t_rr = 319 ns (typ.) and Q_rr = 4.9 μC at 25 °C, significantly lower than many legacy 600 V MOSFETs. This fast, soft recovery behavior reduces voltage overshoot and EMI in continuous conduction mode (CCM) PFC, allowing direct use without external Schottky catch diodes in cost-sensitive designs.

What package type and lead finish does SIHG22N60AE-GE3 use, and is it RoHS-compliant?

SIHG22N60AE-GE3 uses the TO-247AC package with lead (Pb)-free and halogen-free construction, as indicated by the "-GE3" suffix. It complies with RoHS Directive 2011/65/EU and Vishay's material categorization per document 99912, making it suitable for environmentally regulated industrial and telecom equipment.

SIHG22N60AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1451 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG22N60AE-GE3 FAQ

1.How can I place an order for SIHG22N60AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG22N60AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG22N60AE-GE3 reliable?

The price and inventory of SIHG22N60AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG22N60AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG22N60AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG22N60AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG22N60AE-GE3?

SIHG22N60AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG22N60AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG22N60AE-GE3?

For technical support, including SIHG22N60AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG22N60AE-GE3 requirements.

6.How does Aetrix verify that SIHG22N60AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG22N60AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG22N60AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG22N60AE-GE3?

All SIHG22N60AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG22N60AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG22N60AE-GE3 part is unused and in its original packaging.

Return procedure for SIHG22N60AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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