My Inquiry
My Account
Vishay Siliconix SIHG22N60EF-GE3
- Part No.:
- SIHG22N60EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHG22N60EF-GE3.pdf
- Description:
- MOSFET N-CH 600V 19A TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:793
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIHG22N60EF-GE3 from Vishay Siliconix is a 600 V, 19 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring ultra-low gate charge (Qg = 48–96 nC), fast body diode (trr = 113–226 ns), and avalanche-rated ruggedness (EAS = 144 mJ). It serves as a primary switching device in high-efficiency PFC and main-switch stages of telecom/server SMPS.
For engineers reviewing the SIHG22N60EF-GE3 datasheet, SIHG22N60EF-GE3 pinout, SIHG22N60EF-GE3 application, or SIHG22N60EF-GE3 equivalent, key selection criteria include RDS(on) = 0.158 Ω @ 10 V, Ciss = 1423 pF, dv/dt capability of 70 V/ns at TJ = 125 °C, and fast-recovery body diode performance for hard-switched topologies.
Technical Context
This MOSFET employs planar stripe silicon technology optimized for high-voltage switching with low figure-of-merit (RDS(on) × Qg = ~15.2 Ω·nC typ.). Its fast intrinsic body diode enables reduced snubber losses and supports ZVS-assisted operation in resonant converters without external diode parallelization.
The device integrates avalanche energy rating (UIS) and exhibits stable RDS(on) temperature coefficient (0.68 V/°C), enabling predictable conduction loss scaling across -55 to +150 °C junction range. Gate threshold voltage (2.0–4.0 V) ensures robust noise immunity while supporting standard 10 V gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - Supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in telecom/server PFC stages. |
| RDS(on) typ | 0.158 Ω @ 10 V, 25 °C - Enables <1.9 W conduction loss at 11 A RMS in continuous conduction mode PFC. |
| Qg max | 96 nC - Reduces gate drive power requirement and allows use of lower-cost, lower-current gate drivers (e.g., 1–2 A peak). |
| trr max | 226 ns - Limits reverse recovery charge (Qrr = 1.4 μC) to minimize turn-on switching loss and EMI in hard-switched converters. |
| EAS | 144 mJ - Guarantees single-pulse unclamped inductive switching survivability in motor drive or welder output stages. |
| dv/dt rating | 70 V/ns @ TJ = 125 °C - Ensures reliable operation under high dV/dt stress in high-frequency LLC or phase-shifted full-bridge topologies. |
| RthJC | 0.7 °C/W - Enables thermal design with ≤125 °C case temperature at 179 W dissipation, supporting forced-air-cooled 3 kW PFC modules. |
Pinout & Package
SIHG22N60EF-GE3 is housed in TO-247AC package - a through-hole, high-power, single-ended outline with isolated drain tab, optimized for high-voltage isolation and thermal transfer via mounting screw to heatsink. The plastic body includes optional thermal pad contour per JEDEC TO-247 AC variant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level gate drive; low input capacitance (Ciss = 1423 pF) minimizes driver loading and propagation delay. |
| 2 (Drain) | High-side power terminal | Connected to HV DC bus or transformer primary; electrically isolated metal tab enables direct heatsink mounting with dielectric interface. |
| 3 (Source) | Power return / reference node | Serves as local ground reference for gate driver; low-inductance layout critical to suppress VGS ringing during fast switching. |
| 4 (Drain) | Secondary drain connection | Duplicate drain terminal for enhanced current handling and reduced package inductance; must be connected to same HV node as Pin 2. |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 113–226 ns with IRRM = 11 A - Eliminates need for external anti-parallel diode in flyback or active-clamp forward converters. |
| Low RDS(on) × Qg FOM | ~15.2 Ω·nC typ. - Balances conduction and switching losses for optimal efficiency in 65–300 kHz SMPS applications. |
| Avalanche energy rated | EAS = 144 mJ - Allows safe operation under inductive load switching without external snubbers in battery charger or UPS output stages. |
| Lead (Pb)-free & halogen-free | Compliant with RoHS Directive 2011/65/EU and Vishay's Material Declaration 99912 - Suitable for industrial and telecom equipment requiring green compliance. |
| High dv/dt immunity | 70 V/ns @ TJ = 125 °C - Prevents false turn-on during high-speed switching in multi-kW inverters and motor drives. |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
|
Use Scenario: Primary switch in continuous conduction mode (CCM) boost PFC stage of 3 kW server PSU. IC Role / Device Role / Timing Role: High-voltage power switch controlling input current waveform alignment with AC line voltage. Use Value: Low Qg and fast body diode reduce total switching loss by ≥18 % vs. legacy 600 V MOSFETs, improving system efficiency from 95.2 % to 96.1 % at full load. |
Use Scenario: Main switch in phase-shifted full-bridge DC/DC converter of 48 V telecom rectifier. IC Role / Device Role / Timing Role: High-side and low-side synchronous switch managing transformer primary current flow and zero-voltage switching transitions. Use Value: 70 V/ns dv/dt rating prevents spurious turn-on during ZVS dead-time, eliminating shoot-through risk and enabling 200 kHz operation with <0.5 % duty-cycle distortion. |
| Solar PV Inverter | Induction Heating |
|
Use Scenario: DC-link switch in three-phase inverter stage of string solar inverter (5–10 kW). IC Role / Device Role / Timing Role: IGBT replacement in hard-switched inverter leg, handling bidirectional current via integrated body diode. Use Value: 144 mJ UIS rating withstands repetitive line transients during grid fault conditions, extending field reliability beyond 15-year design life. |
Use Scenario: Half-bridge switch in 20–50 kHz resonant tank of industrial induction heater. IC Role / Device Role / Timing Role: Fast-switching power device delivering high-frequency AC to work coil, with body diode conducting reverse current during resonant cycle. Use Value: trr = 113 ns and Qrr = 0.7 μC minimize reverse recovery loss, reducing MOSFET junction temperature rise by 12 °C vs. standard 600 V parts at 30 kW output. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW20NK60Z | RDS(on) = 0.22 Ω @ 10 V; Qg = 72 nC; no UIS rating; TO-247 package | Lacks avalanche ruggedness; requires external clamping in inductive loads; higher conduction loss at >10 A | Acceptable for fixed-input SMPS where transient stress is controlled, but not recommended for motor drives or renewable energy inverters. |
| IXFH20N60P | RDS(on) = 0.20 Ω @ 10 V; Qg = 85 nC; trr = 250 ns; EAS = 120 mJ; TO-247 package | Slower body diode and lower UIS margin; higher Coss increases switching loss above 150 kHz | Suitable for lower-frequency (<100 kHz) industrial SMPS, but SIHG22N60EF-GE3 delivers superior efficiency in high-frequency PFC and ZVS topologies. |
Compared with STW20NK60Z and IXFH20N60P, SIHG22N60EF-GE3 offers the lowest RDS(on) × Qg FOM, fastest body diode, and highest UIS rating in TO-247 - making it the preferred choice for high-efficiency, high-reliability 600 V switching where thermal and dynamic performance are critical.
Availability
SIHG22N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial-grade production.
Supply support for SIHG22N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.
The EF Series - including SIHG22N60EF-GE3 - was engineered specifically for high-frequency, high-efficiency switch-mode power conversion in demanding infrastructure applications such as datacenter PSUs and renewable energy systems.
FAQ
What is the maximum continuous drain current rating for SIHG22N60EF-GE3 at 100 °C case temperature?
The SIHG22N60EF-GE3 has a continuous drain current rating of 12 A at TC = 100 °C, derated linearly from 19 A at TC = 25 °C using a 1.4 W/°C thermal derating factor. This reflects its ability to sustain high current under forced-air cooling in compact power modules where case temperature exceeds ambient by >75 °C.
Does SIHG22N60EF-GE3 have a specified gate threshold voltage range, and how does it affect drive circuit design?
Yes, SIHG22N60EF-GE3 specifies a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C. This wide range ensures reliable turn-on with standard 10 V gate drivers while providing noise margin against spurious triggering - critical in high-dv/dt environments like motor drives where gate drive routing crosses noisy power traces.
Can SIHG22N60EF-GE3 replace older 600 V MOSFETs in existing PFC designs without layout changes?
SIHG22N60EF-GE3 uses the industry-standard TO-247AC footprint and shares identical pinout (Gate-Drain-Source-Drain) with legacy devices like IRFP460 or STW20NK60Z. However, its lower Qg and faster body diode may require minor gate resistor adjustment (e.g., increasing Rg from 10 Ω to 15 Ω) to control dI/dt and prevent oscillation in high-L di/dt circuits.
What is the significance of the "EF" suffix in SIHG22N60EF-GE3, and how does it differ from standard Vishay 600 V MOSFETs?
The "EF" denotes Vishay's EF Series - a family optimized for low RDS(on) × Qg figure-of-merit and fast intrinsic body diode performance. Unlike standard "E" or "N" series, EF devices undergo enhanced process tuning for reduced Qgd and Co(er), resulting in lower switching loss and improved hard-switching robustness - directly validated in SIHG22N60EF-GE3's 48–96 nC Qg and 48 pF Co(er) specs.
Is SIHG22N60EF-GE3 suitable for use in automotive under-hood applications?
No - SIHG22N60EF-GE3 is not AEC-Q101 qualified and is rated for TJ = -55 to +150 °C, which meets industrial but not automotive under-hood requirements (typically -40 to +175 °C with qualification). Its packaging, test protocols, and reliability reporting align with telecom and server standards, not automotive functional safety or qualification mandates.
SIHG22N60EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- EF
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 182mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 96 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1423 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 179W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
SIHG22N60EF-GE3 FAQ
1.How can I place an order for SIHG22N60EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHG22N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHG22N60EF-GE3 reliable?
The price and inventory of SIHG22N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG22N60EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHG22N60EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG22N60EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHG22N60EF-GE3?
SIHG22N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHG22N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHG22N60EF-GE3?
For technical support, including SIHG22N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG22N60EF-GE3 requirements.
6.How does Aetrix verify that SIHG22N60EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHG22N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG22N60EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHG22N60EF-GE3?
All SIHG22N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG22N60EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHG22N60EF-GE3 part is unused and in its original packaging.
Return procedure for SIHG22N60EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIHG22N60EF-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
