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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG22N60E-GE3

Name: SIHG22N60E-GE3
Brand: Vishay Siliconix
SKU: SIHG22N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG22N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG22N60E-GE3.pdf

Description:: MOSFET N-CH 600V 21A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHG22N60E-GE3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.18 Ω at V_GS = 10 V, Q_g = 86 nC, and avalanche-rated (E_AS = 367 mJ). It delivers low conduction and switching losses for high-efficiency power conversion in telecom and industrial PFC stages.

For engineers reviewing the SIHG22N60E-GE3 datasheet, SIHG22N60E-GE3 pinout, SIHG22N60E-GE3 application, or SIHG22N60E-GE3 equivalent, key selection criteria include its 600 V blocking capability, 0.15 Ω typical R_DS(on), 1920 pF C_iss, TO-247AC thermal performance (R_thJC = 0.55 °C/W), and body diode recovery characteristics (t_rr = 344 ns, Q_rr = 5.3 μC).

Technical Context

This device employs planar vertical DMOS technology optimized for high-voltage hard-switching applications. Its gate charge profile (Q_g = 86 nC, Q_gd = 24 nC) supports fast turn-on/turn-off with controlled dV/dt (70 V/ns max), while the integral body diode is rated for 21 A continuous and 56 A pulsed reverse conduction.

The MOSFET operates across -55 °C to +150 °C junction temperature range with 600 V V_DS rating and ±30 V V_GS tolerance. Thermal resistance from junction-to-case is 0.55 °C/W, enabling high-power dissipation (P_D = 227 W at T_C = 25 °C) in properly heatsinked TO-247AC mounting configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports primary-side switching in 400 V DC bus systems with 50 % voltage margin
R_DS(on) max	0.18 Ω at V_GS = 10 V - Limits conduction loss to ≤ 40 W at 11 A RMS in continuous operation
Q_g max	86 nC - Determines gate driver current requirement (≥ 1.7 A peak for 50 ns turn-on)
E_AS	367 mJ - Enables robust unclamped inductive switching without external snubbers
t_rr	344 ns - Defines minimum dead-time needed to prevent shoot-through in half-bridge topologies
R_thJC	0.55 °C/W - Allows 227 W power dissipation with ≤ 125 °C case-to-ambient delta under forced convection
C_iss	1920 pF - Sets Miller capacitance impact on gate drive stability at 100 kHz–500 kHz switching frequencies

Pinout & Package

TO-247AC package with isolated drain tab, 3-pin configuration, and industry-standard mechanical footprint (D = 20.55 mm, E = 15.70 mm, L = 15.15 mm). Thermal pad optional per version; lead finish Pb-free and halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 10 V logic-level drive; requires ≥ 1.7 A peak gate current for full 86 nC charge in < 50 ns
2 (Drain)	Main power output terminal	Connected to high-side switch node; electrically tied to metal tab for low-inductance heat sinking
3 (Source)	Power return reference	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery charge

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	15.48 Ω·nC - Reduces combined conduction and switching loss in 100–300 kHz SMPS designs
Avalanche energy rating	367 mJ - Eliminates need for external clamping circuits in PFC boost inductor flyback transients
Ultra-low Q_gd/Q_g ratio	27.9 % - Improves Miller immunity and enables stable operation with moderate gate resistance (R_g = 4.7 Ω)
Body diode t_rr & Q_rr	344 ns / 5.3 μC - Supports ZVS-assisted bridge topologies with predictable commutation behavior
High dV/dt immunity	70 V/ns - Prevents false turn-on during high-slew-rate switching in noisy high-voltage environments

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 48 V/12 V intermediate bus converters with 380–400 V DC input. IC Role / Device Role / Timing Role: High-side N-channel MOSFET in active clamp forward or LLC resonant topology. Use Value: 0.15 Ω typical R_DS(on) minimizes I²R loss at 15–20 A load currents, improving efficiency by ≥ 0.8 % over comparable 650 V devices.	Use Scenario: Boost PFC stage in 3 kW telecom rectifier operating at 100 kHz with 220 V AC input. IC Role / Device Role / Timing Role: Switching element in continuous conduction mode (CCM) boost converter. Use Value: 367 mJ E_AS rating withstands line surge events without failure, reducing system-level overvoltage protection complexity.
Solar Inverters	Induction Heating
Use Scenario: DC-link switching in string inverters with 600–1000 V PV array inputs. IC Role / Device Role / Timing Role: High-voltage switch in H-bridge inverter leg handling 10–15 A RMS output current. Use Value: 600 V V_DS rating provides 20 % margin above 800 V DC-link peaks, ensuring long-term reliability under transient overvoltage conditions.	Use Scenario: Half-bridge inverter in 10–20 kW industrial induction heating systems operating at 20–50 kHz. IC Role / Device Role / Timing Role: Main switching device controlling resonant tank current with high di/dt demands. Use Value: Body diode Q_rr = 5.3 μC enables clean zero-current switching transitions, reducing EMI and thermal stress during commutation.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 48 V/12 V intermediate bus converters with 380–400 V DC input.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET in active clamp forward or LLC resonant topology.

Use Value: 0.15 Ω typical R_DS(on) minimizes I²R loss at 15–20 A load currents, improving efficiency by ≥ 0.8 % over comparable 650 V devices.

Use Scenario: Boost PFC stage in 3 kW telecom rectifier operating at 100 kHz with 220 V AC input.

IC Role / Device Role / Timing Role: Switching element in continuous conduction mode (CCM) boost converter.

Use Value: 367 mJ E_AS rating withstands line surge events without failure, reducing system-level overvoltage protection complexity.

Solar Inverters

Induction Heating

Use Scenario: DC-link switching in string inverters with 600–1000 V PV array inputs.

IC Role / Device Role / Timing Role: High-voltage switch in H-bridge inverter leg handling 10–15 A RMS output current.

Use Value: 600 V V_DS rating provides 20 % margin above 800 V DC-link peaks, ensuring long-term reliability under transient overvoltage conditions.

Use Scenario: Half-bridge inverter in 10–20 kW industrial induction heating systems operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Main switching device controlling resonant tank current with high di/dt demands.

Use Value: Body diode Q_rr = 5.3 μC enables clean zero-current switching transitions, reducing EMI and thermal stress during commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NM60ND	600 V, 20 A, R_DS(on) = 0.22 Ω, Q_g = 65 nC, TO-247 package	Lower Q_g but higher R_DS(on); no specified E_AS rating	Preferable where gate drive loss dominates, but not recommended for unclamped inductive loads
IXFH20N60P	600 V, 20 A, R_DS(on) = 0.20 Ω, Q_g = 72 nC, TO-247 package	Higher R_thJC (0.65 °C/W); lower E_AS (220 mJ)	Suitable for lower-power PFC stages but requires derating in high-temperature ambient conditions

Compared with STW20NM60ND and IXFH20N60P, SIHG22N60E-GE3 offers superior avalanche ruggedness and lower conduction loss, making it optimal for high-reliability 3–5 kW industrial power supplies where both switching efficiency and fault tolerance are critical.

Availability

SIHG22N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar inverters requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for SIHG22N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The E Series Power MOSFET product line targets high-voltage, high-current switching applications including PFC, SMPS, and motor drives, emphasizing low FOM, avalanche rating, and thermal robustness.

FAQ

What is the maximum continuous drain current rating for SIHG22N60E-GE3 at 100 °C case temperature?

The SIHG22N60E-GE3 has a continuous drain current rating of 13 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 21 A rating at 25 °C case temperature, based on the device's R_thJC = 0.55 °C/W and maximum T_J = 150 °C limit. Designers must ensure heatsink design maintains T_C ≤ 100 °C for sustained 13 A operation.

Does SIHG22N60E-GE3 have a fully rated avalanche capability, and what is the test condition?

Yes, SIHG22N60E-GE3 is avalanche energy rated with E_AS = 367 mJ under repetitive conditions. The test uses V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5.1 A. This rating confirms robustness against inductive switching transients in PFC and SMPS applications without requiring external clamping components.

What is the typical gate threshold voltage range for SIHG22N60E-GE3, and how does it affect drive requirements?

The SIHG22N60E-GE3 has a gate-source threshold voltage V_GS(th) ranging from 2 V to 4 V at T_J = 25 °C. This ensures reliable turn-on with standard 10 V gate drive while maintaining noise immunity. The relatively narrow range minimizes variation in R_DS(on) across production lots and simplifies gate driver design compared to wider-threshold alternatives.

How does the body diode performance of SIHG22N60E-GE3 compare to standard silicon diodes in synchronous rectification?

The SIHG22N60E-GE3 body diode has V_SD = 1.2 V at I_S = 11 A and T_J = 25 °C, with t_rr = 344 ns and Q_rr = 5.3 μC. While not optimized for synchronous rectification like dedicated Schottky or GaN devices, its parameters enable acceptable performance in hard-switched half-bridges where body diode conduction is brief and infrequent, such as in PFC boost freewheeling.

Is SIHG22N60E-GE3 compatible with lead-free reflow soldering processes, and what is the peak temperature limit?

Yes, SIHG22N60E-GE3 is lead (Pb)-free and halogen-free, qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, as stated in the Soldering Recommendations section. This aligns with JEDEC J-STD-020 moisture sensitivity level (MSL) requirements and supports standard PCB assembly processes without thermal damage risk.

SIHG22N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1920 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG22N60E-GE3 FAQ

1.How can I place an order for SIHG22N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG22N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG22N60E-GE3 reliable?

The price and inventory of SIHG22N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG22N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG22N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG22N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG22N60E-GE3?

SIHG22N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG22N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG22N60E-GE3?

For technical support, including SIHG22N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG22N60E-GE3 requirements.

6.How does Aetrix verify that SIHG22N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG22N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG22N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG22N60E-GE3?

All SIHG22N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG22N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG22N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHG22N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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