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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG22N60EL-GE3

Name: SIHG22N60EL-GE3
Brand: Vishay Siliconix
SKU: SIHG22N60EL-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG22N60EL-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG22N60EL-GE3.pdf

Description:: MOSFET N-CH 600V 21A TO247AC

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Product details

Overview

SIHG22N60EL-GE3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.171 Ω (typ. at V_GS = 10 V), Q_g = 37 nC (typ.), and avalanche-rated (E_AS = 286 mJ). It delivers low conduction and switching losses for high-efficiency hard-switched PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHG22N60EL-GE3 datasheet, SIHG22N60EL-GE3 pinout, SIHG22N60EL-GE3 application, or SIHG22N60EL-GE3 equivalent, this page provides verified electrical parameters, thermal resistance (R_thJC = 0.55 °C/W), gate charge waveform details, body diode recovery characteristics (t_rr = 365 ns, Q_rr = 5.8 μC), and validated alternative options for 600 V power conversion designs.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage, medium-current applications. Its low C_iss (1690 pF typ.) and minimized Q_gd/Q_g ratio (15/37 nC) reduce Miller-induced turn-off delay and improve controllability under high dV/dt conditions (62 V/ns).

The integrated body diode supports synchronous rectification and unclamped inductive switching with rated I_SD = 21 A continuous and t_rr = 365 ns at T_J = 25 °C. Thermal design is enabled by direct junction-to-case conduction via the TO-247AC drain tab (R_thJC = 0.55 °C/W).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Maximum blocking voltage compatible with 400 V AC input PFC and 480 V DC bus systems.
R_DS(on) (V_GS = 10 V)	0.171 Ω (typ.) - Enables <1.5 W conduction loss at 11 A, supporting high-power-density 2–3 kW PFC stages.
Q_g	37 nC (typ.) - Reduces gate drive power requirement and enables use with standard 1–2 W gate drivers.
E_AS	286 mJ - Rated single-pulse avalanche energy ensures robustness during transient overvoltage events without external snubbers.
t_rr / Q_rr	365 ns / 5.8 μC - Fast, soft-recovery body diode minimizes switching loss and EMI in bridge-leg configurations.
R_thJC	0.55 °C/W - Enables direct heatsink mounting for thermal management of >200 W dissipation at T_C = 100 °C.
I_D (T_C = 100 °C)	13 A - Continuous current rating at practical heatsink temperature, defining usable output power envelope.

Pinout & Package

TO-247AC package with isolated drain tab (pin 2 and pin 4 electrically connected to drain), standardized lead assignment per Vishay Package Information Doc. 91360 (Version 1–3). Mounting requires thermal interface material between tab and heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate	High-impedance control terminal; requires ≤10 V drive for full enhancement; sensitive to ESD.
2 (Tab)	Drain	Main high-voltage power terminal; electrically connected to metal tab for low-inductance, low-resistance heat path.
3 (Lead)	Source	Power return and reference node for gate drive; forms common source node in TO-247 layout.
4 (Tab edge)	Drain	Secondary drain connection point on same metal tab; ensures mechanical stability and current sharing across tab area.

Key Features

Feature	Design Value
Reduced FOM (R_DS(on) × Q_g)	6.33 Ω·nC (0.171 Ω × 37 nC) - Directly improves efficiency in both conduction and switching domains.
Avalanche energy rating	286 mJ (single pulse) - Eliminates need for external clamping circuits in inductive load switching.
Low C_iss and C_oss	1690 pF / 95 pF (typ.) - Minimizes capacitive loading on gate driver and reduces turn-on loss.
Body diode t_rr & Q_rr	365 ns / 5.8 μC - Enables reliable operation in synchronous rectifier and half-bridge topologies without shoot-through risk.
Lead (Pb)-free and Halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - Supports environmentally compliant industrial manufacturing.

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost PFC converter operating at 100 kHz with 400 V DC output from 230 V AC input. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage; handles 15–20 A peak currents. Use Value: Low R_DS(on) and Q_g reduce total losses below 2.5 W at full load, enabling >96% PFC efficiency.	Use Scenario: Isolated LLC resonant DC-DC stage in 48 V telecom rectifier delivering up to 3 kW. IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge configuration; commutated at zero voltage. Use Value: Fast body diode recovery (t_rr = 365 ns) prevents reverse recovery failure during ZVS transitions.
Solar PV Inverter DC Link	Industrial Motor Drive Inverter
Use Scenario: DC link switching in string-level 10 kW photovoltaic inverter with 600 V bus. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in three-phase inverter leg; operated in hard-switched mode. Use Value: 600 V V_DS rating and 286 mJ E_AS withstand solar array surge transients without derating.	Use Scenario: 7.5 kW variable frequency drive for HVAC compressors using 6-step or SPWM control. IC Role / Device Role / Timing Role: Output switch in inverter leg; subjected to repetitive inductive turn-off stress. Use Value: R_thJC = 0.55 °C/W allows direct heatsink mounting, maintaining T_J < 135 °C at 13 A continuous.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost PFC converter operating at 100 kHz with 400 V DC output from 230 V AC input.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage; handles 15–20 A peak currents.

Use Value: Low R_DS(on) and Q_g reduce total losses below 2.5 W at full load, enabling >96% PFC efficiency.

Use Scenario: Isolated LLC resonant DC-DC stage in 48 V telecom rectifier delivering up to 3 kW.

IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge configuration; commutated at zero voltage.

Use Value: Fast body diode recovery (t_rr = 365 ns) prevents reverse recovery failure during ZVS transitions.

Solar PV Inverter DC Link

Industrial Motor Drive Inverter

Use Scenario: DC link switching in string-level 10 kW photovoltaic inverter with 600 V bus.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in three-phase inverter leg; operated in hard-switched mode.

Use Value: 600 V V_DS rating and 286 mJ E_AS withstand solar array surge transients without derating.

Use Scenario: 7.5 kW variable frequency drive for HVAC compressors using 6-step or SPWM control.

IC Role / Device Role / Timing Role: Output switch in inverter leg; subjected to repetitive inductive turn-off stress.

Use Value: R_thJC = 0.55 °C/W allows direct heatsink mounting, maintaining T_J < 135 °C at 13 A continuous.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW22NM60ND	R_DS(on) = 0.22 Ω (higher), Q_g = 45 nC (higher), TO-247 package, no specified E_AS rating	Lower efficiency in high-frequency PFC; less robust under unclamped inductive switching	Prefer SIHG22N60EL-GE3 where avalanche ruggedness and lower gate charge are critical.
IXTH24N60L2	R_DS(on) = 0.18 Ω, Q_g = 48 nC, enhanced body diode (t_rr = 220 ns), TO-247 package	Better diode performance but higher switching loss due to larger Q_g; higher cost	Choose SIHG22N60EL-GE3 for balanced trade-off of conduction loss, switching loss, and ruggedness at lower BOM cost.

Compared with STW22NM60ND and IXTH24N60L2, SIHG22N60EL-GE3 offers the lowest R_DS(on) × Q_g figure-of-merit (6.33 Ω·nC), verified avalanche rating, and optimal thermal resistance-making it preferred for space-constrained, high-reliability 600 V power conversion where efficiency and transient robustness are jointly prioritized.

Availability

SIHG22N60EL-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHG22N60EL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.

The SIHG22N60EL-GE3 belongs to Vishay's EL Series Power MOSFET family, engineered specifically for high-efficiency, high-reliability hard-switched power conversion in industrial and communications infrastructure.

FAQ

What is the maximum continuous drain current for SIHG22N60EL-GE3 at 100 °C case temperature?

The SIHG22N60EL-GE3 supports 13 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating reflects real-world thermal constraints when mounted on a heatsink with adequate thermal interface and airflow, and must be used with derating curves for ambient temperature and duty cycle. The SIHG22N60EL-GE3 datasheet confirms this value under V_GS = 10 V and T_J ≤ 150 °C.

Does SIHG22N60EL-GE3 have a qualified avalanche rating, and what is its value?

Yes, the SIHG22N60EL-GE3 is fully rated for single-pulse avalanche energy with E_AS = 286 mJ, tested per JEDEC JESD24-1. This rating is measured at V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4.5 A. The SIHG22N60EL-GE3 specification sheet explicitly lists this parameter in the Absolute Maximum Ratings section, confirming ruggedness for inductive load switching without external protection.

What is the typical reverse recovery time (t_rr) of the body diode in SIHG22N60EL-GE3?

The typical reverse recovery time (t_rr) of the integral body diode in SIHG22N60EL-GE3 is 365 ns, measured at T_J = 25 °C, I_F = I_S = 11 A, dI/dt = 100 A/μs, and V_R = 25 V. This value is documented in the "Drain-Source Body Diode Characteristics" section of the SIHG22N60EL-GE3 datasheet and directly impacts performance in synchronous rectification and half-bridge topologies.

Is SIHG22N60EL-GE3 lead (Pb)-free and halogen-free?

Yes, SIHG22N60EL-GE3 is lead (Pb)-free and halogen-free, as confirmed in the Ordering Information section of the Vishay datasheet (Document Number: 91641). The "-GE3" suffix denotes compliance with RoHS Directive 2011/65/EU and JEDEC JS709C, making it suitable for environmentally regulated industrial and telecom applications.

What is the thermal resistance from junction to case (R_thJC) for SIHG22N60EL-GE3?

The maximum junction-to-case (drain) thermal resistance R_thJC for SIHG22N60EL-GE3 is 0.55 °C/W, as stated in the Thermal Resistance Ratings table. This value applies to conduction through the TO-247AC drain tab and is critical for calculating junction temperature rise under power dissipation. The SIHG22N60EL-GE3 datasheet specifies this parameter with no "typical" value - only max - indicating guaranteed worst-case thermal performance.

SIHG22N60EL-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 197mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 74 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG22N60EL-GE3 FAQ

1.How can I place an order for SIHG22N60EL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG22N60EL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG22N60EL-GE3 reliable?

The price and inventory of SIHG22N60EL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG22N60EL-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG22N60EL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG22N60EL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG22N60EL-GE3?

SIHG22N60EL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG22N60EL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG22N60EL-GE3?

For technical support, including SIHG22N60EL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG22N60EL-GE3 requirements.

6.How does Aetrix verify that SIHG22N60EL-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG22N60EL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG22N60EL-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG22N60EL-GE3?

All SIHG22N60EL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG22N60EL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG22N60EL-GE3 part is unused and in its original packaging.

Return procedure for SIHG22N60EL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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