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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG22N60S-E3

Name: SIHG22N60S-E3
Brand: Vishay Siliconix
SKU: SIHG22N60S-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG22N60S-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG22N60S-E3.pdf

Description:: MOSFET N-CH 600V 22A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHG22N60S-E3 from Vishay Siliconix is a 600 V, 22 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.190 Ω @ V_GS = 10 V, Q_g = 98 nC max, and 100 % avalanche tested for ruggedness in hard-switching PFC and solar inverter stages.

For engineers reviewing the SIHG22N60S-E3 datasheet, SIHG22N60S-E3 pinout, SIHG22N60S-E3 application, or SIHG22N60S-E3 equivalent, key selection criteria include its dV/dt ruggedness (37 V/ns), low gate charge for high-frequency switching, ultra-low R_DS(on), and verified repetitive avalanche energy (E_AR = 25 mJ).

Technical Context

This Generation One S Series MOSFET uses planar VDMOS technology optimized for high-voltage, medium-current hard-switching applications. Its design emphasizes low conduction loss (R_DS(on) × Q_g figure-of-merit) and robust unclamped inductive switching capability.

It integrates a fast-recovery body diode (t_rr = 462 ns, Q_rr = 8.3 μC) with controlled reverse recovery characteristics, enabling reliable operation in totem-pole PFC and bidirectional DC-DC converters without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in industrial UPS and solar inverters.
R_DS(on) max @ 10 V	0.190 Ω - enables <1.5 W conduction loss at 11 A continuous drain current, reducing heatsink requirements.
Q_g max	98 nC - allows efficient gate drive with standard 1–2 A peak drivers at 100 kHz+ switching frequencies.
E_AS single-pulse	690 mJ - ensures survivability during unclamped inductive turn-off events in motor control H-bridges.
dV/dt ruggedness	37 V/ns - prevents false turn-on in high-dV/dt environments like LLC resonant converters and phase-shifted full-bridge topologies.
T_J range	−55 °C to +150 °C - qualified for extended thermal operation in server power supplies and outdoor solar equipment.

Pinout & Package

TO-247AC package: isolated tab (Drain), 3-pin through-hole mounting, 0.5 °C/W junction-to-case thermal resistance, compatible with standard heatsink clamping hardware.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; requires <100 nC total gate charge for full enhancement; sensitive to ESD (±30 V rating).
D (Drain)	High-side power switch node	Connected to high-voltage DC bus; electrically tied to metal tab; must be isolated from heatsink unless referenced to same potential.
S (Source)	Power return / reference node	Serves as common return for gate drive and load current; defines local ground for driver IC; carries full 22 A continuous current.

Key Features

Feature	Design Value
100 % avalanche tested	Guarantees single-pulse E_AS ≥ 690 mJ and repetitive E_AR ≥ 25 mJ - eliminates need for derating in inductive load switching.
Ultra-low R_DS(on) × Q_g	18.6 Ω·nC typical - improves efficiency in 50–200 kHz PFC stages by reducing combined conduction and switching losses.
dV/dt ruggedness	37 V/ns minimum - suppresses parasitic turn-on in high-speed half-bridge configurations without snubbers.
Fast body diode	t_rr = 462 ns, Q_rr = 8.3 μC - minimizes reverse recovery loss and EMI in synchronous rectification and bidirectional converters.

Applications

PFC Power Supply Stages	Solar Inverters
Use Scenario: Boost PFC front-end in 1–3 kW telecom rectifiers and server PSUs operating at 65–100 kHz. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter, handling 22 A RMS input current. Use Value: Low R_DS(on) reduces conduction loss below 1.2 W; low Q_g enables clean zero-voltage switching (ZVS) transition with minimal gate drive loss.	Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: High-side switch in three-phase inverter bridge, operating at 16–20 kHz with forced-air cooling. Use Value: 600 V rating accommodates 1000 V DC bus with margin; avalanche rating ensures reliability during grid fault transients.
UPS Systems	Motor Control Drives
Use Scenario: Online double-conversion UPS with 480 V DC bus and 5–10 kVA output capacity. IC Role / Device Role / Timing Role: Inverter-stage switch in IGBT-like hard-switched topology, delivering 22 A peak load current. Use Value: TO-247AC package provides low R_thJC = 0.5 °C/W for stable thermal performance under sustained overload conditions.	Use Scenario: Field-oriented control (FOC) in HVAC compressors and industrial pumps using 3-phase 220–400 V AC input. IC Role / Device Role / Timing Role: Low-side switch in six-pack inverter module, commutating up to 13 A continuous motor current at 100 °C case temperature. Use Value: Rated ID = 13 A @ T_C = 100 °C ensures safe operation without derating in enclosed drive cabinets.

PFC Power Supply Stages

Solar Inverters

Use Scenario: Boost PFC front-end in 1–3 kW telecom rectifiers and server PSUs operating at 65–100 kHz.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter, handling 22 A RMS input current.

Use Value: Low R_DS(on) reduces conduction loss below 1.2 W; low Q_g enables clean zero-voltage switching (ZVS) transition with minimal gate drive loss.

Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side switch in three-phase inverter bridge, operating at 16–20 kHz with forced-air cooling.

Use Value: 600 V rating accommodates 1000 V DC bus with margin; avalanche rating ensures reliability during grid fault transients.

UPS Systems

Motor Control Drives

Use Scenario: Online double-conversion UPS with 480 V DC bus and 5–10 kVA output capacity.

IC Role / Device Role / Timing Role: Inverter-stage switch in IGBT-like hard-switched topology, delivering 22 A peak load current.

Use Value: TO-247AC package provides low R_thJC = 0.5 °C/W for stable thermal performance under sustained overload conditions.

Use Scenario: Field-oriented control (FOC) in HVAC compressors and industrial pumps using 3-phase 220–400 V AC input.

IC Role / Device Role / Timing Role: Low-side switch in six-pack inverter module, commutating up to 13 A continuous motor current at 100 °C case temperature.

Use Value: Rated ID = 13 A @ T_C = 100 °C ensures safe operation without derating in enclosed drive cabinets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NM60FD	R_DS(on) = 0.22 Ω @ 10 V; Q_g = 85 nC; dV/dt = 25 V/ns; not 100 % avalanche tested	Lower switching speed but higher conduction loss; less robust in unclamped inductive loads	Preferable where cost sensitivity outweighs avalanche reliability and efficiency targets.
IXTH24N60L2	R_DS(on) = 0.20 Ω @ 10 V; Q_g = 105 nC; includes built-in gate resistor; rated for 650 V breakdown	Higher gate charge increases driver complexity; integrated resistor simplifies layout but limits drive flexibility	Preferred when simplified gate routing and enhanced ESD protection are prioritized over minimal Q_g.

Compared with STP22NM60FD and IXTH24N60L2, SIHG22N60S-E3 delivers superior dV/dt immunity and guaranteed avalanche performance-critical for mission-critical PFC and solar inverter designs-while maintaining competitive R_DS(on) and gate charge metrics.

Availability

SIHG22N60S-E3 is available at Aetrix Electronics and suitable for PFC power supply stages, solar inverters, and UPS systems requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.

Supply support for SIHG22N60S-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The S Series power MOSFET product line is engineered for high-voltage, medium-current hard-switching applications-including PFC, UPS, and solar conversion-where avalanche ruggedness, low R_DS(on) × Q_g, and thermal stability are critical.

FAQ

What is the maximum continuous drain current rating for SIHG22N60S-E3 at 100 °C case temperature?

The SIHG22N60S-E3 is rated for 13 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and ensures safe operation without exceeding the 150 °C maximum junction temperature under sustained load conditions. The SIHG22N60S-E3 maintains R_DS(on) stability across this range due to its positive V_GS(th) temperature coefficient.

Does SIHG22N60S-E3 have a fully characterized body diode suitable for synchronous rectification?

Yes, the SIHG22N60S-E3 features a fully characterized intrinsic body diode with t_rr = 462 ns and Q_rr = 8.3 μC at T_J = 25 °C. Its reverse recovery behavior is documented across temperature and current conditions, enabling accurate loss modeling in synchronous rectifier and bidirectional DC-DC topologies. The SIHG22N60S-E3 body diode is rated for 22 A continuous forward current, matching its ID rating.

Is SIHG22N60S-E3 pin-compatible with other TO-247AC MOSFETs in the same voltage class?

The SIHG22N60S-E3 uses the industry-standard TO-247AC 3-pin configuration (G-D-S), making it mechanically and electrically compatible with most TO-247AC-mounted high-voltage MOSFETs. However, pin compatibility does not guarantee functional equivalence-gate drive requirements, R_DS(on), and avalanche ratings differ across vendors. Layout reuse is possible, but circuit validation is required when substituting the SIHG22N60S-E3.

What is the gate threshold voltage range for SIHG22N60S-E3, and how does it affect drive design?

The SIHG22N60S-E3 has a V_GS(th) range of 2.0 V to 4.0 V at T_J = 25 °C, ensuring reliable turn-on with standard 10 V gate drive while avoiding unintended conduction near 5 V logic levels. This threshold window supports robust noise immunity in noisy industrial environments. For stable operation, the SIHG22N60S-E3 requires ≥8 V to ensure full enhancement across temperature and process variation.

How is the avalanche capability of SIHG22N60S-E3 validated, and what does "100 % tested" mean?

Each SIHG22N60S-E3 unit undergoes 100 % single-pulse avalanche testing per JEDEC JESD24-11, verifying E_AS ≥ 690 mJ at T_J = 25 °C. Repetitive avalanche energy (E_AR = 25 mJ) is statistically validated per qualification standards. "100 % tested" means every production lot-and typically every unit-is subjected to this stress test, confirming ruggedness without reliance on statistical sampling. This validation applies directly to the SIHG22N60S-E3, not just the family.

SIHG22N60S-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 190mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 5620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG22N60S-E3 FAQ

1.How can I place an order for SIHG22N60S-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG22N60S-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG22N60S-E3 reliable?

The price and inventory of SIHG22N60S-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG22N60S-E3 is usually 5 days.

3.What payment methods are accepted for SIHG22N60S-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG22N60S-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG22N60S-E3?

SIHG22N60S-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG22N60S-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG22N60S-E3?

For technical support, including SIHG22N60S-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG22N60S-E3 requirements.

6.How does Aetrix verify that SIHG22N60S-E3 is sourced from the original manufacturer or authorized distributors?

All SIHG22N60S-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG22N60S-E3 meets industry standards.

7.What is the process for return or replacement of SIHG22N60S-E3?

All SIHG22N60S-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG22N60S-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG22N60S-E3 part is unused and in its original packaging.

Return procedure for SIHG22N60S-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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