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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG22N65E-GE3

Name: SIHG22N65E-GE3
Brand: Vishay Siliconix
SKU: SIHG22N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG22N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG22N65E-GE3.pdf

Description:: MOSFET N-CH 650V 22A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHG22N65E-GE3 from Vishay Siliconix is a 650 V, 22 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.18 Ω (max) at V_GS = 10 V, Q_g = 110 nC (max), and avalanche-rated (E_AS = 691 mJ). It delivers low conduction and switching losses for high-efficiency hard-switched PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHG22N65E-GE3 datasheet, SIHG22N65E-GE3 pinout, SIHG22N65E-GE3 application, or SIHG22N65E-GE3 equivalent, key selection criteria include its 650 V V_DS, 0.15 Ω typical R_DS(on), ultra-low Q_gd/Q_g ratio (0.29), 100% UIS-tested ruggedness, and TO-247AC thermal performance (R_thJC = 0.55 °C/W).

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage, medium-current switching with low gate charge and minimized output capacitance nonlinearity. Its C_iss = 2415 pF and C_oss = 118 pF support fast turn-on/turn-off while maintaining EMI control in 100–300 kHz PFC and main switch applications.

The device integrates an intrinsic body diode with t_rr = 400 ns and Q_rr = 5.9 μC at 25 °C, enabling reliable operation in continuous conduction mode (CCM) boost PFC without external diode snubbing. Its dV/dt immunity of 70 V/ns at T_J = 125 °C ensures robustness against parasitic turn-on in high-dI/dt environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 400 V RMS (565 V peak) with margin for line surges and ringing in offline PFC.
R_DS(on) max	0.18 Ω at V_GS = 10 V - Limits conduction loss to ≤ 44 W at 22 A, enabling compact heatsink design in 1–3 kW systems.
Q_g max	110 nC - Enables efficient gate drive with <1 W driver loss at 200 kHz, reducing gate driver IC stress and PCB layout complexity.
E_AS	691 mJ - Fully rated for unclamped inductive switching events, eliminating need for external clamping in flyback or LLC resonant converters.
R_thJC	0.55 °C/W - Supports >200 W continuous dissipation with standard TO-247 heatsinking, critical for high-power density server PSU designs.
t_rr	400 ns - Minimizes reverse recovery loss and diode-induced voltage spikes during hard commutation in bridge configurations.
V_GS(th)	2–4 V - Ensures clean turn-on with standard 12 V gate drivers and avoids spurious conduction from noise coupling.

Pinout & Package

SIHG22N65E-GE3 uses the industry-standard TO-247AC package (JEDEC outline), featuring isolated drain tab for direct heatsink mounting and optimized thermal path from junction to case. The package has three leads: Gate (pin 1), Drain (pins 2 & 4), Source (pin 3), with pin 2 and pin 4 electrically connected to the drain metallization and thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; requires low-impedance drive due to Q_g = 110 nC; sensitive to ESD (±30 V rating).
Pins 2 & 4 (D)	Drain terminals	High-voltage power input/output node; pins 2 and 4 are internally bonded to the same drain metallization and thermal pad for parallel current handling and enhanced thermal transfer.
Pin 3 (S)	Source terminal	Power return and gate reference node; must be routed with low inductance to minimize V_GS ringing during switching.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	19.8 Ω·nC - Directly reduces total switching + conduction loss, enabling higher efficiency than competitive 650 V MOSFETs in 100–250 kHz PFC.
Avalanche energy rating	691 mJ (single-pulse) - Guarantees survivability under worst-case inductive turn-off without derating, simplifying reliability validation.
Ultra-low Q_gd/Q_g ratio	0.29 (32/110 nC) - Reduces Miller plateau time and improves controllability during dV/dt transitions, lowering risk of shoot-through in half-bridge topologies.
Body diode Q_rr	5.9 μC - Enables stable CCM operation in boost PFC without requiring active clamp or SiC diode replacement.
RoHS-compliant & halogen-free	Meets IEC 61249-2-21 and JEDEC J-STD-020 - Supports environmentally compliant manufacturing and end-of-life recycling requirements.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Active clamp forward or phase-shifted full-bridge primary switch in 1–3 kW redundant AC/DC units. IC Role / Device Role / Timing Role: High-side main switch handling 380–400 V DC bus with 100–200 kHz switching frequency. Use Value: 0.55 °C/W R_thJC enables >96% efficiency at full load while maintaining T_J < 125 °C without forced air.	Use Scenario: Boost PFC stage in -48 V telecom rectifiers delivering up to 2.5 kW per module. IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch operating at 65–120 kHz. Use Value: Low Q_g and 0.15 Ω typical R_DS(on) reduce total losses by ≥12% vs. legacy 650 V MOSFETs, improving thermal margin and MTBF.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverters with 600–1000 V DC input and transformerless topology. IC Role / Device Role / Timing Role: Unidirectional switch in H-bridge or NPC configuration managing bidirectional power flow. Use Value: 650 V rating with 100% UIS qualification ensures safe operation during grid fault transients and islanding detection events.	Use Scenario: Inverter leg switch in 3–7.5 kW variable frequency drives powering HVAC compressors or pumps. IC Role / Device Role / Timing Role: IGBT replacement in 2–10 kHz hard-switched output stage for improved efficiency and reduced EMI filtering cost. Use Value: Body diode t_rr = 400 ns and soft recovery characteristics eliminate need for anti-parallel Si fast recovery diodes.

Server Power Supply

Telecom Rectifier

Use Scenario: Active clamp forward or phase-shifted full-bridge primary switch in 1–3 kW redundant AC/DC units.

IC Role / Device Role / Timing Role: High-side main switch handling 380–400 V DC bus with 100–200 kHz switching frequency.

Use Value: 0.55 °C/W R_thJC enables >96% efficiency at full load while maintaining T_J < 125 °C without forced air.

Use Scenario: Boost PFC stage in -48 V telecom rectifiers delivering up to 2.5 kW per module.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch operating at 65–120 kHz.

Use Value: Low Q_g and 0.15 Ω typical R_DS(on) reduce total losses by ≥12% vs. legacy 650 V MOSFETs, improving thermal margin and MTBF.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverters with 600–1000 V DC input and transformerless topology.

IC Role / Device Role / Timing Role: Unidirectional switch in H-bridge or NPC configuration managing bidirectional power flow.

Use Value: 650 V rating with 100% UIS qualification ensures safe operation during grid fault transients and islanding detection events.

Use Scenario: Inverter leg switch in 3–7.5 kW variable frequency drives powering HVAC compressors or pumps.

IC Role / Device Role / Timing Role: IGBT replacement in 2–10 kHz hard-switched output stage for improved efficiency and reduced EMI filtering cost.

Use Value: Body diode t_rr = 400 ns and soft recovery characteristics eliminate need for anti-parallel Si fast recovery diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW22N65M5	650 V, 22 A, R_DS(on) = 0.19 Ω, Q_g = 95 nC, D²PAK package	Lower Q_g but higher R_DS(on); smaller package limits thermal headroom above 150 W	Prefer for space-constrained 1 kW designs where gate drive loss dominates; avoid for >200 W continuous dissipation.
IXTH24N65X2	650 V, 24 A, R_DS(on) = 0.155 Ω, Q_g = 125 nC, TO-247 package	Lower R_DS(on) but higher Q_g; no UIS rating specified in datasheet	Prefer for ultra-low conduction loss priority in PFC; verify system-level avalanche robustness if used in inductive switching.

Compared with STW22N65M5, SIHG22N65E-GE3 offers superior thermal capability (0.55 vs. 1.2 °C/W R_thJC) and guaranteed UIS, making it more suitable for high-reliability telecom and server applications; versus IXTH24N65X2, SIHG22N65E-GE3 trades 2 A current rating for lower Q_g and documented avalanche endurance, favoring efficiency-critical SMPS over raw current capacity.

Availability

SIHG22N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for SIHG22N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The E Series power MOSFETs, including SIHG22N65E-GE3, were designed specifically for high-frequency, high-efficiency switching in server, telecom, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIHG22N65E-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHG22N65E-GE3 is 14 A when the case temperature (T_C) is 100 °C, as specified in the Absolute Maximum Ratings table. This rating assumes V_GS = 10 V and accounts for thermal derating beyond 25 °C ambient. At T_C = 25 °C, the rating increases to 22 A. Engineers must verify actual junction temperature using R_thJC = 0.55 °C/W and measured power dissipation to ensure operation within the -55 to +150 °C junction range.

Does SIHG22N65E-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHG22N65E-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 691 mJ, tested per JEDEC standard JESD24-1 with V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 7 A. Each device undergoes 100% UIS testing during production. This rating ensures robustness against inductive turn-off transients in hard-switched topologies like flyback or forward converters without requiring external snubbers.

What is the gate threshold voltage range for SIHG22N65E-GE3, and why does it matter for drive circuit design?

The gate threshold voltage (V_GS(th)) for SIHG22N65E-GE3 is specified from 2 V to 4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 12 V gate drivers while preventing accidental conduction from noise or leakage currents below 2 V. Designers must ensure gate drive voltage exceeds 4 V (preferably ≥10 V) to achieve the rated R_DS(on) of 0.18 Ω and avoid linear-mode operation that causes excessive heating in SIHG22N65E-GE3.

How does the body diode performance of SIHG22N65E-GE3 compare to discrete fast recovery diodes in PFC applications?

SIHG22N65E-GE3 features a co-packaged body diode with t_rr = 400 ns and Q_rr = 5.9 μC at 25 °C, enabling stable operation in continuous conduction mode (CCM) boost PFC without external diodes. While discrete SiC Schottky diodes offer zero Q_rr, SIHG22N65E-GE3's soft recovery and low V_SD = 1.2 V reduce EMI and thermal stress compared to standard FRDs-making it a cost-effective, integrated solution for mid-power PFC stages where SiC cost premium is unjustified.

Is SIHG22N65E-GE3 compatible with lead-free reflow soldering processes, and what is the maximum peak temperature allowed?

Yes, SIHG22N65E-GE3 is lead (Pb)-free and halogen-free, qualified for lead-free reflow soldering per JEDEC J-STD-020. The maximum peak temperature is 300 °C for 10 seconds, as specified in the Absolute Maximum Ratings. This allows compatibility with standard Pb-free reflow profiles (e.g., IPC/JEDEC J-STD-020 Class 3) without compromising package integrity or die attach reliability. Thermal pad soldering must follow Vishay's recommended footprint and stencil guidelines for optimal heat transfer.

SIHG22N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2415 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG22N65E-GE3 FAQ

1.How can I place an order for SIHG22N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG22N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG22N65E-GE3 reliable?

The price and inventory of SIHG22N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG22N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG22N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG22N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG22N65E-GE3?

SIHG22N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG22N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG22N65E-GE3?

For technical support, including SIHG22N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG22N65E-GE3 requirements.

6.How does Aetrix verify that SIHG22N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG22N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG22N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG22N65E-GE3?

All SIHG22N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG22N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG22N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHG22N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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