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Vishay Siliconix SIHG23N60E-GE3
- Part No.:
- SIHG23N60E-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHG23N60E-GE3.pdf
- Description:
- MOSFET N-CH 600V 23A TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:8,609
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Product details
Overview
SIHG23N60E-GE3 from Vishay Siliconix is a 600 V, 23 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring RDS(on) = 0.158 Ω (max) at VGS = 10 V, Qg = 95 nC (max), and avalanche-rated (EAS = 353 mJ). It delivers low conduction and switching losses for high-efficiency power conversion in PFC and SMPS stages.
For engineers reviewing the SIHG23N60E-GE3 datasheet, SIHG23N60E-GE3 pinout, SIHG23N60E-GE3 application, or SIHG23N60E-GE3 equivalent, key selection criteria include its 600 V blocking capability, 227 W power dissipation, 0.55 °C/W junction-to-case thermal resistance, and robust unclamped inductive switching performance under 100 A/μs dI/dt.
Technical Context
This device uses planar stripe silicon technology optimized for high-voltage hard-switching applications. Its gate charge profile (Qg = 63 nC typ, Qgd = 25 nC) enables fast turn-on/turn-off with controlled dV/dt (37 V/ns max at TJ = 125 °C) and reduced Miller-induced shoot-through risk.
The integrated body diode supports synchronous rectification and freewheeling in bridge topologies, with trr = 384–768 ns and Qrr = 6.4–12.8 μC at IF = 12 A, dI/dt = 100 A/μs, and TJ = 25 °C - enabling predictable recovery behavior in continuous conduction mode (CCM) PFC.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports 400 V AC input rectified to ~560 V DC bus with 10 % margin for voltage spikes in telecom/server PSUs |
| RDS(on) max | 0.158 Ω at VGS = 10 V - limits conduction loss to ≤ 37 W at 23 A DC, critical for thermal management in compact PFC designs |
| Qg max | 95 nC - determines gate driver power requirement and switching speed; enables <44 ns turn-on delay with 9.1 Ω Rg |
| EAS | 353 mJ - ensures single-pulse ruggedness during load dump or short-circuit events without failure |
| RthJC | 0.55 °C/W - allows direct heatsink mounting for high-power density layouts; enables 150 °C TJ at 100 W dissipation with 55 °C case temp |
| ID cont @ TC = 100 °C | 15 A - defines usable current derating in real-world thermal environments above ambient |
| VSD | 0.9–1.2 V at IS = 12 A - sets forward drop penalty during body diode conduction in half-bridge freewheeling |
Pinout & Package
TO-247AC package with isolated drain tab (pins 2 and 4 both connected to drain), standard 3-lead configuration optimized for high-current, high-voltage PCB layouts and mechanical heatsinking. Thermal pad contour optional per JEDEC TO-247 variation AC.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives 10 V logic-level drive; requires <95 nC charge to fully enhance; sensitive to ESD (±30 V rating) |
| 2 (Drain) | High-side power output | Connected to DC bus or transformer primary; electrically tied to metal tab for low-inductance heatsinking |
| 3 (Source) | Power return / reference node | Serves as local ground for gate drive; carries full load current and body diode reverse recovery current |
| 4 (Drain) | Secondary drain connection | Redundant drain path to reduce package inductance; must be routed to same net as Pin 2 for optimal EMI and switching performance |
Key Features
| Feature | Design Value |
|---|---|
| Low FOM (RDS(on) × Qg) | 15.0 Ω·nC (typ) - balances conduction and switching loss for 100–300 kHz PFC operation |
| Avalanche energy rating | 353 mJ single-pulse - eliminates need for external snubbers in inductive load switching |
| Reduced Ciss | 2418 pF (typ) - lowers gate drive current demand and improves noise immunity in high-dV/dt environments |
| Ultra-low Qgd/Qg ratio | 26 % (25/95 nC) - minimizes Miller plateau duration and enhances hard-switching robustness |
| Lead (Pb)-free & Halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc# 99912 |
Applications
| Server & Telecom Power Supplies | Power Factor Correction (PFC) |
|---|---|
|
Use Scenario: Primary switch in 3.5 kW front-end AC/DC converter for cloud data center rack PSUs. IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost PFC stage operating at 100 kHz. Use Value: 0.158 Ω RDS(on) and 95 nC Qg enable >96 % efficiency at full load while maintaining TJ < 135 °C with forced air cooling. |
Use Scenario: Active switch in industrial 5 kW solar PV inverter boost stage interfacing 600–1000 V DC link. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET handling bidirectional energy flow during reactive power control. Use Value: 353 mJ EAS and 37 V/ns dV/dt rating ensure reliability during grid fault transients and islanding detection cycles. |
| Fluorescent Ballast Lighting | Induction Heating |
|
Use Scenario: Half-bridge switch in electronic ballast driving 400 W HID lamps with resonant ignition. IC Role / Device Role / Timing Role: High-frequency (50–100 kHz) switching device managing lamp current regulation and end-of-life protection. Use Value: Low Qrr (6.4 μC typ) and soft-recovery body diode minimize switching loss and audible noise during zero-voltage switching transitions. |
Use Scenario: Inverter leg switch in 8 kW induction cooker operating at 20–50 kHz with variable load coupling. IC Role / Device Role / Timing Role: Hard-switched power transistor subjected to high dI/dt (>100 A/μs) and repetitive avalanche stress. Use Value: 63 A pulsed drain current (IDM) and 0.55 °C/W RthJC support peak power bursts without thermal runaway or bond-wire lift-off. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW20NK60Z | 600 V, 20 A, RDS(on) = 0.22 Ω, Qg = 65 nC, D2PAK package | Lower peak current but higher RDS(on); smaller footprint but inferior thermal resistance (RthJC = 1.2 °C/W) | Preferred where board space is constrained and power level ≤ 1.5 kW; not suitable for 23 A continuous conduction |
| IXFH24N60P | 600 V, 24 A, RDS(on) = 0.17 Ω, Qg = 110 nC, TO-247 package | Higher gate charge increases driver loss; slightly higher RDS(on) raises conduction loss by ~7 % at 12 A | Acceptable for lower-frequency (<60 kHz) SMPS where switching loss is secondary to cost; requires stronger gate driver |
Compared with STW20NK60Z and IXFH24N60P, SIHG23N60E-GE3 offers the best balance of low RDS(on), moderate Qg, and superior thermal performance in TO-247AC - making it optimal for 2–5 kW PFC and server PSU designs requiring sustained 23 A operation and high avalanche ruggedness.
Availability
SIHG23N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial PFC modules requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.
Supply support for SIHG23N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The SIHG23N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-reliability hard-switching power conversion in 400–800 V DC bus systems.
FAQ
What is the maximum continuous drain current for SIHG23N60E-GE3 at 100 °C case temperature?
The SIHG23N60E-GE3 supports 15 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and ensures safe operation within the 150 °C maximum junction temperature limit. At lower case temperatures, current capacity increases up to 23 A at TC = 25 °C.
Does SIHG23N60E-GE3 have avalanche capability, and how is it rated?
Yes, SIHG23N60E-GE3 is avalanche energy rated with a single-pulse unclamped inductive switching (UIS) capability of 353 mJ. This rating is measured under standardized conditions: VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, and IAS = 5 A. The device is designed to withstand repetitive avalanche events within datasheet limits without degradation.
What is the typical gate threshold voltage range for SIHG23N60E-GE3?
The gate-source threshold voltage (VGS(th)) for SIHG23N60E-GE3 is specified from 2 V to 4 V at VDS = VGS and ID = 250 μA. This range ensures reliable turn-on with standard 10 V gate drive while providing noise margin against false triggering in noisy power environments. The typical value falls near 3 V.
Can SIHG23N60E-GE3 be used in synchronous rectification topologies?
No - SIHG23N60E-GE3 is not optimized for synchronous rectification. Its body diode has relatively high VSD (0.9–1.2 V) and long reverse recovery time (384–768 ns), resulting in significant conduction and switching loss when used as a freewheeling diode. For synchronous rectification, dedicated low-VF, fast-recovery MOSFETs or Schottky alternatives are recommended instead of SIHG23N60E-GE3.
What is the thermal resistance from junction to case (RthJC) for SIHG23N60E-GE3?
The maximum junction-to-case (drain) thermal resistance for SIHG23N60E-GE3 is 0.55 °C/W, as stated in the Thermal Resistance Ratings table. This low value enables efficient heat transfer from the die to an external heatsink mounted on the TO-247AC drain tab, supporting high-power operation with minimal temperature rise across the package interface.
SIHG23N60E-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 158mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2418 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 227W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
SIHG23N60E-GE3 FAQ
1.How can I place an order for SIHG23N60E-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHG23N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHG23N60E-GE3 reliable?
The price and inventory of SIHG23N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG23N60E-GE3 is usually 5 days.
3.What payment methods are accepted for SIHG23N60E-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG23N60E-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHG23N60E-GE3?
SIHG23N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHG23N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHG23N60E-GE3?
For technical support, including SIHG23N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG23N60E-GE3 requirements.
6.How does Aetrix verify that SIHG23N60E-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHG23N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG23N60E-GE3 meets industry standards.
7.What is the process for return or replacement of SIHG23N60E-GE3?
All SIHG23N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG23N60E-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHG23N60E-GE3 part is unused and in its original packaging.
Return procedure for SIHG23N60E-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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