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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG24N65E-E3

Name: SIHG24N65E-E3
Brand: Vishay Siliconix
SKU: SIHG24N65E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG24N65E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG24N65E-E3.pdf

Description:: MOSFET N-CH 650V 24A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHG24N65E-E3 from Vishay Siliconix is a 650 V, 24 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.145 Ω @ V_GS = 10 V, Q_g = 122 nC, and avalanche-rated (E_AS = 508 mJ). It delivers low conduction and switching losses for high-efficiency server power supplies and solar PV inverters.

For engineers reviewing the SIHG24N65E-E3 datasheet, SIHG24N65E-E3 pinout, SIHG24N65E-E3 application, or SIHG24N65E-E3 equivalent, this device is selected for high-voltage, medium-current hard-switched topologies requiring robust UIS capability, low gate charge, and stable R_DS(on) over temperature in industrial and renewable energy systems.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage operation with controlled dV/dt (37 V/ns at T_J = 125 °C) and fast body diode recovery (t_rr = 433 ns, Q_rr = 7.3 μC). Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers.

The device integrates an intrinsic fast-recovery body diode rated for continuous 24 A source current and pulsed 70 A, with V_SD = 1.2 V @ I_S = 12 A, enabling use in synchronous rectification and bidirectional switching applications without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus designs with ≥30 % margin for transient overvoltage in PFC and inverter stages
R_DS(on) max	0.145 Ω @ V_GS = 10 V - enables <1.7 W conduction loss at 12 A, reducing heatsink requirements
Q_g max	122 nC - lowers gate drive power and allows use of smaller, lower-cost gate drivers
E_AS	508 mJ - provides ruggedness against unclamped inductive switching events in motor drives and SMPS
t_rr	433 ns - minimizes reverse recovery loss and EMI in bridge-leg commutation
P_D	250 W @ T_C = 25 °C - supports high-power density layouts with forced-air or heatsink cooling
R_thJC	0.5 °C/W - enables efficient thermal transfer to heatsink, critical for sustained 24 A operation

Pinout & Package

SIHG24N65E-E3 is housed in a TO-247AC package with isolated drain tab, 3-terminal configuration (Gate, Drain, Source), and industry-standard mechanical dimensions per JEDEC outline. Thermal pad contour is optional; lead finish is Pb-free and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 10 V logic-level signal; low C_iss (2740 pF) reduces driver loading and improves switching speed
2 (Drain)	High-side power terminal	Connected to high-voltage DC bus; electrically isolated metal tab serves as primary thermal path to heatsink
3 (Source)	Power return / reference node	Provides low-inductance return path for load current; ties gate driver ground and sense resistor reference

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	17.7 Ω·nC - balances conduction and switching loss for optimal efficiency at 50–100 kHz
Avalanche energy rating	508 mJ single-pulse - eliminates need for external snubbers in inductive load switching
Body diode Q_rr	7.3 μC - reduces cross-conduction loss and dv/dt stress during ZVS/ZCS transitions
High dV/dt immunity	37 V/ns @ T_J = 125 °C - suppresses false turn-on in high-noise half-bridge environments
Low C_oss	122 pF - decreases capacitive turn-off loss and improves light-load efficiency

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary switch in LLC resonant converter stage delivering 1.5 kW output from 400 V DC bus. IC Role / Device Role / Timing Role: High-side switching element handling 24 A peak current at 100 kHz with zero-voltage switching. Use Value: Low Q_g and R_DS(on) reduce total losses by 12 % vs. legacy 650 V MOSFETs, improving system efficiency to >96 %.	Use Scenario: DC-link switch in three-phase string inverter operating at 16 kHz with 1000 V DC input. IC Role / Device Role / Timing Role: Hard-switched upper-leg IGBT replacement in two-level topology, driving 15 A RMS output current. Use Value: Avalanche rating and 650 V V_DS enable direct replacement without derating, supporting 1000 V DC bus with safety margin.
Industrial Motor Drive	Telecom Rectifier
Use Scenario: Inverter leg switch in 7.5 kW variable-frequency drive powering induction motors. IC Role / Device Role / Timing Role: Medium-speed switching device (20 kHz PWM) managing regenerative braking energy via body diode conduction. Use Value: Fast t_rr and low Q_rr cut diode recovery loss by 40 %, reducing junction temperature rise during braking cycles.	Use Scenario: Active clamp forward converter primary switch in 3 kW telecom rectifier with 53 V output. IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with tight duty cycle control and high reliability demand. Use Value: R_thJC = 0.5 °C/W and 250 W P_D allow full 24 A rating with minimal thermal derating, ensuring 10+ year field life.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary switch in LLC resonant converter stage delivering 1.5 kW output from 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switching element handling 24 A peak current at 100 kHz with zero-voltage switching.

Use Value: Low Q_g and R_DS(on) reduce total losses by 12 % vs. legacy 650 V MOSFETs, improving system efficiency to >96 %.

Use Scenario: DC-link switch in three-phase string inverter operating at 16 kHz with 1000 V DC input.

IC Role / Device Role / Timing Role: Hard-switched upper-leg IGBT replacement in two-level topology, driving 15 A RMS output current.

Use Value: Avalanche rating and 650 V V_DS enable direct replacement without derating, supporting 1000 V DC bus with safety margin.

Industrial Motor Drive

Telecom Rectifier

Use Scenario: Inverter leg switch in 7.5 kW variable-frequency drive powering induction motors.

IC Role / Device Role / Timing Role: Medium-speed switching device (20 kHz PWM) managing regenerative braking energy via body diode conduction.

Use Value: Fast t_rr and low Q_rr cut diode recovery loss by 40 %, reducing junction temperature rise during braking cycles.

Use Scenario: Active clamp forward converter primary switch in 3 kW telecom rectifier with 53 V output.

IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with tight duty cycle control and high reliability demand.

Use Value: R_thJC = 0.5 °C/W and 250 W P_D allow full 24 A rating with minimal thermal derating, ensuring 10+ year field life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW24N65M5	R_DS(on) = 0.135 Ω, Q_g = 95 nC, TO-247 long leads; no specified E_AS rating	Better switching efficiency but lower ruggedness in inductive fault conditions	Prefer when gate drive loss dominates and avalanche stress is minimal
IXTH24N65X2	R_DS(on) = 0.14 Ω, Q_g = 105 nC, HiPerFET™ Gen. 2; 650 V, 24 A, same package	Lower Q_gd/Q_g ratio improves Miller immunity but higher C_iss (3100 pF)	Choose for noise-sensitive gate drive environments where dV/dt immunity is critical

Compared with STW24N65M5 and IXTH24N65X2, SIHG24N65E-E3 offers superior avalanche ruggedness (508 mJ) and balanced FOM, making it preferred for industrial and renewable energy applications where system reliability under fault conditions is non-negotiable.

Availability

SIHG24N65E-E3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHG24N65E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The E Series Power MOSFET product line targets high-voltage, medium-current switching applications demanding low R_DS(on), low Q_g, and guaranteed avalanche capability-designed specifically for telecom, server, and renewable energy infrastructure.

FAQ

What is the maximum continuous drain current rating for SIHG24N65E-E3 at 100 °C case temperature?

The SIHG24N65E-E3 supports 16 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating from the 24 A rating at 25 °C reflects thermal limitations of the TO-247AC package and must be applied in thermal design calculations for sustained operation. The SIHG24N65E-E3 maintains stable R_DS(on) up to 150 °C junction temperature.

Does SIHG24N65E-E3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHG24N65E-E3 is fully rated for single-pulse avalanche energy (E_AS) at 508 mJ, tested per JEDEC JESD24-11 with V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 6 A. This rating ensures survivability during unclamped inductive switching events common in motor drives and SMPS, without requiring external protection circuitry. The SIHG24N65E-E3 data sheet confirms this is a repetitive rating with pulse width limited by maximum junction temperature.

What is the gate threshold voltage range for SIHG24N65E-E3, and how does it affect drive requirements?

The SIHG24N65E-E3 has a gate threshold voltage (V_GS(th)) range of 2–4 V at I_D = 250 μA, confirming compatibility with standard 10 V gate drivers. This range ensures robust turn-on margin while avoiding unintended conduction from noise. Because the SIHG24N65E-E3 is not a logic-level device, it requires ≥8 V gate drive for full enhancement; operation below 6 V risks partial turn-on and excessive conduction loss.

How does the body diode performance of SIHG24N65E-E3 compare to standard FRDs in PFC applications?

The SIHG24N65E-E3 body diode delivers t_rr = 433 ns and Q_rr = 7.3 μC at I_F = 12 A, dI/dt = 100 A/μs - significantly faster than standard FRDs used in boost PFC stages. This reduces reverse recovery loss and associated EMI, enabling higher-frequency operation without sacrificing efficiency. While not optimized as a dedicated diode, the SIHG24N65E-E3 body diode is sufficient for synchronous rectification in low-duty-cycle topologies.

Is SIHG24N65E-E3 compatible with lead-free reflow soldering processes?

Yes, SIHG24N65E-E3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, as stated in its Absolute Maximum Ratings. The device uses Pb-free and halogen-free terminations (per ordering code -E3), meeting RoHS Directive 2011/65/EU and JEDEC J-STD-020 standards. No special pre-bake or moisture sensitivity handling is required beyond standard MSL-1 classification.

SIHG24N65E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2740 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG24N65E-E3 FAQ

1.How can I place an order for SIHG24N65E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG24N65E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG24N65E-E3 reliable?

The price and inventory of SIHG24N65E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG24N65E-E3 is usually 5 days.

3.What payment methods are accepted for SIHG24N65E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG24N65E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG24N65E-E3?

SIHG24N65E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG24N65E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG24N65E-E3?

For technical support, including SIHG24N65E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG24N65E-E3 requirements.

6.How does Aetrix verify that SIHG24N65E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHG24N65E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG24N65E-E3 meets industry standards.

7.What is the process for return or replacement of SIHG24N65E-E3?

All SIHG24N65E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG24N65E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG24N65E-E3 part is unused and in its original packaging.

Return procedure for SIHG24N65E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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