My Inquiry
My Account
Vishay Siliconix SIHG24N65EF-GE3
- Part No.:
- SIHG24N65EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHG24N65EF-GE3.pdf
- Description:
- MOSFET N-CH 650V 24A TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:4,460
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIHG24N65EF-GE3 from Vishay Siliconix is a 650 V, 24 A N-channel power MOSFET in TO-247AC package, featuring fast body diode, ultra-low gate charge (81 nC typ.), reduced Qrr (0.9–2.1 μC), and avalanche-rated operation (691 mJ). It delivers low RDS(on) of 0.13 Ω (typ.) at VGS = 10 V and is optimized for high-efficiency phase-shifted bridge and LCC resonant topologies in PV inverters and telecom SMPS.
For engineers reviewing the SIHG24N65EF-GE3 datasheet, SIHG24N65EF-GE3 pinout, SIHG24N65EF-GE3 application, or SIHG24N65EF-GE3 equivalent, key selection criteria include its 70 V/ns dV/dt rating, 151–288 ns trr, 0.9–1.2 V VSD at 12 A, and thermal resistance RthJC = 0.5 °C/W - critical for high-power ZVS designs requiring robust body diode recovery and low switching loss.
Technical Context
This E-series MOSFET employs optimized planar silicon technology to simultaneously reduce Qg, Qrr, and Ciss while maintaining rugged avalanche capability. Its fast intrinsic body diode enables reliable operation in hard-commutated resonant converters without external SiC diodes.
The device supports high dV/dt immunity (70 V/ns at TJ = 125 °C) and reverse diode dV/dt rating of 50 V/ns, making it suitable for high-frequency, high-voltage switching where voltage transients and diode recovery stress are dominant failure mechanisms.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - supports 400 V DC bus with 1.6× safety margin in PV inverters |
| RDS(on) max | 0.156 Ω at 10 V - ensures ≤ 45 W conduction loss at 15 A continuous drain current |
| Qg max | 122 nC - enables efficient gate drive with < 1 W driver loss at 100 kHz switching |
| trr max | 288 ns - minimizes commutation tail current and associated switching loss in phase-shifted bridges |
| EAS | 691 mJ - provides single-pulse unclamped inductive switching robustness for welder and charger surge events |
| RthJC | 0.5 °C/W - allows 250 W dissipation with ≤ 125 °C junction rise above 25 °C case temperature |
| VSD max | 1.2 V at 12 A - reduces body diode conduction loss during dead-time in half-bridge configurations |
Pinout & Package
TO-247AC package with isolated drain tab, 3-pin configuration, and industry-standard lead assignment: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source (per Vishay Package Information Doc #91360, Version 1/2/3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (Pin 1) | Control electrode | Low-input-capacitance node (Ciss = 2774 pF) requiring < 10 Ω gate resistor for stable turn-on/turn-off |
| Drain (Pin 2) | High-voltage power terminal | Electrically connected to metal tab; must be mounted to heatsink with insulated thermal interface |
| Source (Pin 3) | Reference and return path | Common source node for gate drive loop; layout must minimize inductance to suppress ringing |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 151–288 ns and Qrr = 0.9–2.1 μC enable ZVS in phase-shifted full-bridge without snubbers |
| Low Qg × RDS(on) FOM | 122 nC × 0.156 Ω = 19.0 - benchmark figure-of-merit for high-voltage MOSFET efficiency trade-off |
| Avalanche energy rating | EAS = 691 mJ - supports reliable operation under inductive load switching without external clamping |
| High dV/dt immunity | 70 V/ns at TJ = 125 °C - prevents false turn-on in high-noise industrial motor drives and welders |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay Material Category "Green" per Doc #99912 |
Applications
| Solar Photovoltaic Inverters | Telecom Server Power Supplies |
|---|---|
Use Scenario: Three-level NPC or T-type inverter stage converting 600–1000 V DC input to grid-synchronized AC. IC Role / Device Role / Timing Role: High-side/low-side switching element in bidirectional power flow topology with soft-switching requirements. Use Value: Fast body diode and low Qrr reduce dead-time losses and eliminate need for external anti-parallel SiC diodes in 17–25 kHz operation. | Use Scenario: Primary-side switch in LLC resonant converter delivering 1–3 kW to server VRMs. IC Role / Device Role / Timing Role: Main power switch operating in zero-voltage switching (ZVS) region across wide load range. Use Value: 70 V/ns dV/dt rating and low Coss(tr) = 333 pF ensure reliable ZVS initiation and minimal voltage overshoot during turn-off. |
| Industrial Battery Chargers | High-Intensity Discharge (HID) Lighting |
Use Scenario: Isolated DC-DC stage in 3–10 kW EVSE or forklift battery chargers using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Synchronous rectifier or primary switch handling repetitive unclamped inductive energy during fault conditions. Use Value: 691 mJ EAS rating withstands repeated 50–100 A inrush currents without degradation during constant-current charging phases. | Use Scenario: Electronic ballast driving 250–1000 W metal halide or high-pressure sodium lamps. IC Role / Device Role / Timing Role: Resonant switch in LCC topology managing lamp ignition and steady-state regulation. Use Value: Low Qg (81 nC typ.) and fast trr (151 ns typ.) enable precise timing control of lamp current zero-crossings and extend lamp life by reducing electrode sputtering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW24N65M5 | 650 V, 24 A, RDS(on) = 0.145 Ω, Qg = 95 nC, no specified EAS rating | Lacks avalanche energy spec; lower Qg but higher RDS(on); not qualified for unclamped inductive switching | Prefer SIHG24N65EF-GE3 where system-level reliability requires guaranteed UIS performance |
| IXFH24N65X2 | 650 V, 24 A, RDS(on) = 0.135 Ω, Qg = 72 nC, trr = 120 ns, EAS = 520 mJ | Faster trr and lower Qg, but lower EAS and different gate threshold (3–5 V vs. 2–4 V) | Choose SIHG24N65EF-GE3 when higher avalanche margin and tighter VGS(th) distribution are required for consistent ZVS startup |
Compared with STW24N65M5 and IXFH24N65X2, SIHG24N65EF-GE3 offers superior UIS robustness and tighter gate threshold control - critical for high-reliability industrial SMPS where overvoltage transients and gate drive margin are design constraints.
Availability
SIHG24N65EF-GE3 is available at Aetrix Electronics and suitable for solar PV inverters, telecom server power supplies, and industrial battery chargers requiring stable component supply and long-term manufacturability.
Supply support for SIHG24N65EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The E Series power MOSFET product line was developed specifically for high-efficiency, high-frequency resonant and soft-switching topologies - emphasizing fast body diode recovery, low gate charge, and rugged avalanche capability.
FAQ
What is the maximum continuous drain current rating for SIHG24N65EF-GE3 at 100 °C case temperature?
The SIHG24N65EF-GE3 has a continuous drain current rating of 15 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-247AC package and ensures safe operation within the 150 °C maximum junction temperature. The device maintains RDS(on) stability up to this temperature due to its positive VDS temperature coefficient.
Does SIHG24N65EF-GE3 support gate drive voltages below 10 V?
Yes, SIHG24N65EF-GE3 has a gate-source threshold voltage (VGS(th)) range of 2–4 V, enabling partial enhancement at 5 V. However, full conduction and specified RDS(on) require VGS ≥ 10 V. Driving below 8 V increases RDS(on) significantly and raises switching losses - SIHG24N65EF-GE3 is not a logic-level MOSFET and should not be used with 3.3 V or 5 V microcontroller outputs without level-shifting.
How is the body diode performance of SIHG24N65EF-GE3 characterized in the datasheet?
The body diode of SIHG24N65EF-GE3 is characterized by trr = 151–288 ns, Qrr = 0.9–2.1 μC, IRRM = 13 A, and VSD = 0.9–1.2 V at IS = 12 A and TJ = 25 °C. These parameters are measured under standardized conditions (IF = 12 A, dI/dt = 100 A/μs, VR = 400 V) and confirm its suitability for ZVS topologies where diode recovery behavior directly impacts efficiency and EMI.
What thermal resistance values apply to SIHG24N65EF-GE3 in TO-247AC package?
SIHG24N65EF-GE3 specifies RthJC = 0.5 °C/W (max) from junction to case (drain tab), and RthJA = 40 °C/W (max) from junction to ambient. The low RthJC enables high-power dissipation when mounted to an adequately sized heatsink, while RthJA is representative of standard PCB mounting without forced airflow - actual system-level thermal performance depends on heatsink design and interface material.
Is SIHG24N65EF-GE3 suitable for use in automotive applications?
No, SIHG24N65EF-GE3 is not AEC-Q101 qualified and is not recommended for automotive powertrain or safety-critical systems. It is designed and tested for industrial, telecom, and renewable energy applications. For automotive-grade alternatives, consult Vishay's AQ series MOSFETs - SIHG24N65EF-GE3 lacks the extended temperature validation, humidity testing, and failure-mechanism analysis required for automotive qualification.
SIHG24N65EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 156mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 122 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2774 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
SIHG24N65EF-GE3 FAQ
1.How can I place an order for SIHG24N65EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHG24N65EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHG24N65EF-GE3 reliable?
The price and inventory of SIHG24N65EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG24N65EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHG24N65EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG24N65EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHG24N65EF-GE3?
SIHG24N65EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHG24N65EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHG24N65EF-GE3?
For technical support, including SIHG24N65EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG24N65EF-GE3 requirements.
6.How does Aetrix verify that SIHG24N65EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHG24N65EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG24N65EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHG24N65EF-GE3?
All SIHG24N65EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG24N65EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHG24N65EF-GE3 part is unused and in its original packaging.
Return procedure for SIHG24N65EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIHG24N65EF-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
