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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG24N65E-GE3

Name: SIHG24N65E-GE3
Brand: Vishay Siliconix
SKU: SIHG24N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG24N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG24N65E-GE3.pdf

Description:: MOSFET N-CH 650V 24A TO247AC

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Product details

Overview

SIHG24N65E-GE3 from Vishay Siliconix is a 650 V, 24 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.145 Ω (max) at V_GS = 10 V, Q_g = 122 nC (max), and avalanche-rated (E_AS = 508 mJ). It delivers low conduction and switching losses for high-efficiency hard-switched PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHG24N65E-GE3 datasheet, SIHG24N65E-GE3 pinout, SIHG24N65E-GE3 application, or SIHG24N65E-GE3 equivalent, this device is selected for high-voltage, medium-current switching where low gate charge, robust UIS capability, and thermal performance in TO-247AC are critical design requirements.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for 650 V operation with controlled dV/dt (37 V/ns at T_J = 125 °C) and fast body diode recovery (t_rr = 433 ns, Q_rr = 7.3 μC). Its gate threshold voltage (2–4 V) ensures stable turn-on under standard 10 V gate drive while maintaining noise immunity.

The device integrates a co-packaged, optimized intrinsic body diode with I_SD = 24 A continuous rating and I_SM = 70 A pulsed capability. Thermal resistance R_thJC = 0.5 °C/W enables high-power dissipation up to 250 W at T_C = 25 °C, supporting compact heatsink designs in industrial and renewable energy inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports DC bus voltages up to 400 V nominal with ≥60 % margin for transient overvoltage in PFC and PV inverter applications.
R_DS(on) max	0.145 Ω at V_GS = 10 V - Limits conduction loss to ≤17.4 W at 24 A, enabling thermally constrained layouts without forced air.
Q_g max	122 nC - Reduces gate driver power demand and switching transition time, critical for >100 kHz SMPS operation.
E_AS	508 mJ - Enables reliable unclamped inductive switching in motor drives and welding equipment without external snubbers.
t_rr	433 ns - Minimizes diode reverse recovery loss and associated EMI in bridge-leg configurations with synchronous rectification.
R_thJC	0.5 °C/W - Allows direct mounting to heatsinks for sustained 250 W power dissipation at case temperature ≤25 °C.
I_D cont	24 A at T_C = 25 °C - Sustains full rated current in high-density server PSU primary switches with adequate thermal management.

Pinout & Package

TO-247AC package: isolated drain tab (pins 2 & 4), single-source lead (pin 3), and gate lead (pin 1); thermal pad on drain side for direct heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Accepts 10 V logic-level drive; input capacitance C_iss = 2740 pF requires robust gate driver with ≥2 A peak sourcing/sinking capability.
2 & 4 (Drain)	High-side power output	Electrically connected to metal tab; must be insulated from heatsink unless system ground-referenced; supports 650 V blocking.
3 (Source)	Power return / reference node	Serves as local ground reference for gate drive; carries full load current and diode reverse recovery current during commutation.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	≤17.7 Ω·nC - Balances conduction and switching loss for optimal efficiency across 50–200 kHz operating range.
Avalanche energy rating	508 mJ single-pulse - Eliminates need for external clamping circuits in inductive load switching (e.g., PFC boost chokes).
Ultra-low Q_gd/Q_g ratio	30 % (37/122 nC) - Improves Miller immunity and reduces risk of false turn-on in high-dV/dt half-bridge environments.
Body diode softness factor	Q_rr/I_RRM = 0.26 μC/A - Limits voltage overshoot and ringing during diode commutation in LLC and phase-shifted full-bridge topologies.
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and JEDEC JS709C - Meets environmental compliance for global industrial and telecom deployments.

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switch in 3.3 kW, 94 % efficient 48 V telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage, medium-current switching element handling 400 V DC input and delivering regulated 48 V output at 69 A. Use Value: Low Q_g and R_DS(on) reduce total switching + conduction loss to <12 W per device, enabling natural convection cooling.	Use Scenario: Boost switch in 3 kW PFC stage for distributed base station power systems operating at 100 kHz. IC Role / Device Role / Timing Role: Fast-turning, avalanche-rugged switch managing 20 A RMS input current with 650 V blocking requirement. Use Value: 433 ns t_rr and low Q_rr suppress diode-induced voltage spikes, reducing EMI filter size by 30 % vs. legacy 600 V MOSFETs.
Solar Inverters	Industrial Motor Drives
Use Scenario: DC-link switch in string-level PV inverter with 1000 V DC input and transformerless topology. IC Role / Device Role / Timing Role: High-reliability, high-voltage switch in H-bridge configuration handling bidirectional current and repetitive UIS events. Use Value: 508 mJ E_AS withstands lightning-induced transients and grid fault conditions without derating or redundancy.	Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with field-oriented control and 16 kHz PWM. IC Role / Device Role / Timing Role: Medium-power switching device operating at junction temperatures up to 135 °C in sealed enclosure. Use Value: R_thJC = 0.5 °C/W allows 250 W dissipation with minimal heatsink mass, reducing system weight and cost in mobile equipment.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switch in 3.3 kW, 94 % efficient 48 V telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage, medium-current switching element handling 400 V DC input and delivering regulated 48 V output at 69 A.

Use Value: Low Q_g and R_DS(on) reduce total switching + conduction loss to <12 W per device, enabling natural convection cooling.

Use Scenario: Boost switch in 3 kW PFC stage for distributed base station power systems operating at 100 kHz.

IC Role / Device Role / Timing Role: Fast-turning, avalanche-rugged switch managing 20 A RMS input current with 650 V blocking requirement.

Use Value: 433 ns t_rr and low Q_rr suppress diode-induced voltage spikes, reducing EMI filter size by 30 % vs. legacy 600 V MOSFETs.

Solar Inverters

Industrial Motor Drives

Use Scenario: DC-link switch in string-level PV inverter with 1000 V DC input and transformerless topology.

IC Role / Device Role / Timing Role: High-reliability, high-voltage switch in H-bridge configuration handling bidirectional current and repetitive UIS events.

Use Value: 508 mJ E_AS withstands lightning-induced transients and grid fault conditions without derating or redundancy.

Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with field-oriented control and 16 kHz PWM.

IC Role / Device Role / Timing Role: Medium-power switching device operating at junction temperatures up to 135 °C in sealed enclosure.

Use Value: R_thJC = 0.5 °C/W allows 250 W dissipation with minimal heatsink mass, reducing system weight and cost in mobile equipment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW24N65M5	R_DS(on) = 0.135 Ω (lower), Q_g = 110 nC (lower), but E_AS = 390 mJ (23 % lower); TO-247 long leads.	Better efficiency in continuous conduction mode, but reduced ruggedness in inductive fault conditions.	Prefer SIHG24N65E-GE3 when unclamped inductive stress or high-temperature reliability dominates over marginal conduction loss.
IXFH24N65X2	R_DS(on) = 0.130 Ω, Q_g = 92 nC (25 % lower), t_rr = 320 ns (26 % faster), but no specified E_AS rating.	Superior switching speed and gate drive efficiency, but lacks documented avalanche capability for safety-critical designs.	Choose SIHG24N65E-GE3 where datasheet-verified UIS performance is required per IEC 62368-1 or UL 62368-1 system certification.

Compared with STW24N65M5 and IXFH24N65X2, the SIHG24N65E-GE3 trades minor conduction loss for industry-leading avalanche ruggedness and consistent body diode behavior-making it preferred for mission-critical power conversion where fault tolerance and long-term reliability outweigh peak efficiency gains.

Availability

SIHG24N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar inverters requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for SIHG24N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous reliability testing.

The E Series Power MOSFETs-including SIHG24N65E-GE3-are engineered for high-efficiency, high-reliability switching in industrial, telecom, and renewable energy power systems where ruggedness and thermal stability are non-negotiable.

FAQ

What is the maximum continuous drain current rating for SIHG24N65E-GE3 at 100 °C case temperature?

The SIHG24N65E-GE3 supports 16 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating from 24 A at 25 °C reflects thermal constraints of the TO-247AC package and ensures safe operation within R_thJC = 0.5 °C/W limits. Designers must verify heatsink interface resistance and ambient airflow to maintain T_C ≤ 100 °C under full load.

Does SIHG24N65E-GE3 have a fully rated body diode for synchronous rectification?

Yes, the SIHG24N65E-GE3 features a fully characterized intrinsic body diode with I_S = 24 A continuous and I_SM = 70 A pulsed ratings, plus t_rr = 433 ns and Q_rr = 7.3 μC at T_J = 25 °C. These parameters are measured and guaranteed-not typical values-and support use in freewheeling and synchronous rectification roles without external diodes in many 650 V topologies.

Is SIHG24N65E-GE3 suitable for use in zero-voltage switching (ZVS) circuits?

Yes, the SIHG24N65E-GE3 is well-suited for ZVS applications due to its low Q_gd/Q_g ratio (30 %), controlled C_oss = 122 pF, and soft reverse recovery (Q_rr/I_RRM = 0.26 μC/A). These traits minimize voltage spike overshoot and enable reliable resonant turn-on in LLC and phase-shifted full-bridge converters operating up to 300 kHz.

What is the gate threshold voltage range for SIHG24N65E-GE3, and how does it affect drive circuit design?

The SIHG24N65E-GE3 has a V_GS(th) range of 2–4 V at T_J = 25 °C. This ensures reliable turn-on with standard 10 V gate drivers while providing sufficient margin against spurious turn-on from noise or Miller coupling. Drive circuits must supply ≥10 V to guarantee R_DS(on) ≤ 0.145 Ω and avoid linear-mode operation under load.

How does the avalanche energy rating of SIHG24N65E-GE3 compare to similar 650 V MOSFETs?

The SIHG24N65E-GE3 specifies E_AS = 508 mJ (single-pulse, test condition: L = 28.2 mH, I_AS = 6 A), exceeding most competing 650 V devices by 20–40 %. For example, STW24N65M5 rates 390 mJ and IXFH24N65X2 omits E_AS entirely. This makes SIHG24N65E-GE3 uniquely suited for designs requiring certified fault tolerance without external protection components.

SIHG24N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2740 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG24N65E-GE3 FAQ

1.How can I place an order for SIHG24N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG24N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG24N65E-GE3 reliable?

The price and inventory of SIHG24N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG24N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG24N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG24N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG24N65E-GE3?

SIHG24N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG24N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG24N65E-GE3?

For technical support, including SIHG24N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG24N65E-GE3 requirements.

6.How does Aetrix verify that SIHG24N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG24N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG24N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG24N65E-GE3?

All SIHG24N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG24N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG24N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHG24N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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