My Inquiry
My Account
Vishay Siliconix SIHG24N80AEF-GE3
- Part No.:
- SIHG24N80AEF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHG24N80AEF-GE3.pdf
- Description:
- EF SERIES POWER MOSFET WITH FAST
- Quantity:
- Payment:
- Shipping:
Inventory:372
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIHG24N80AEF-GE3 from Vishay Siliconix is an 800 V, 20 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 0.170 Ω RDS(on) at VGS = 10 V, 90 nC total gate charge, and fast body diode with 127 ns reverse recovery time - optimized for high-efficiency PFC and SMPS stages in telecom and server power supplies.
For engineers reviewing the SIHG24N80AEF-GE3 datasheet, SIHG24N80AEF-GE3 pinout, SIHG24N80AEF-GE3 application, or SIHG24N80AEF-GE3 equivalent, key selection criteria include avalanche-rated UIS capability (127 mJ), low Co(er) of 51 pF for reduced switching loss, and validated performance under 100 V/ns dv/dt stress in hard-switched topologies.
Technical Context
This MOSFET employs planar high-voltage silicon technology with optimized charge distribution to achieve low figure-of-merit (RDS(on) × Qg = 15.3 Ω·nC). Its fast intrinsic body diode supports ZVS/ZCS operation in resonant converters and reduces snubber losses in hard-switched PFC boost stages.
The device is rated for repetitive unclamped inductive switching (UIS) up to 127 mJ and exhibits controlled dv/dt immunity (100 V/ns at TJ = 125 °C), enabling robust operation in high-di/dt industrial motor drive half-bridges and solar inverter DC-link switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 800 V - supports 650 V bus designs with 23 % voltage margin for transient overvoltage tolerance |
| RDS(on) typ @ 25 °C | 0.170 Ω - enables <1.7 W conduction loss at 10 A continuous drain current |
| Qg max | 90 nC - determines gate driver power requirement (~1.8 mW avg. at 100 kHz, VGS swing = 10 V) |
| EAS | 127 mJ - ensures single-pulse avalanche ruggedness without derating in PFC choke failure scenarios |
| trr | 127 ns typical - minimizes commutation loss and diode reverse recovery overshoot in bridge-leg switching |
| RthJC | 0.6 °C/W - allows 208 W dissipation with ≤120 °C case-to-ambient ΔT using standard heatsink mounting |
| ID cont @ TC = 100 °C | 13 A - defines usable current limit in thermally constrained 1U server PSU layouts |
Pinout & Package
TO-247AC package: isolated tab (drain), vertical lead orientation, 3-pin through-hole mounting with 2.54 mm lead pitch. Tab is electrically connected to drain terminal and requires insulated mounting hardware.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; threshold voltage 2–4 V ensures reliable turn-on with standard PWM controllers |
| D (Drain) | High-side power switch node | Connected to TO-247 tab; must be electrically isolated from heatsink; handles full 800 V blocking and 46 A pulsed current |
| S (Source) | Power return reference | Serves as local ground for gate drive loop; low-inductance connection critical to suppress ringing during 210 A/μs di/dt events |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg FOM | 15.3 Ω·nC - directly reduces combined conduction + switching loss in 100–300 kHz PFC stages |
| Fast body diode (trr = 127 ns) | Enables zero-voltage switching in LLC resonant converters without external SiC diode replacement |
| Avalanche energy rating (EAS = 127 mJ) | Eliminates need for external clamping circuits in inductive load switching applications like welding inverters |
| Low effective output capacitance (Co(er) = 51 pF) | Reduces turn-off energy loss by ~35 % vs. standard 800 V MOSFETs with comparable RDS(on) |
| dv/dt immunity (100 V/ns) | Prevents false turn-on in high-noise motor drive half-bridges without gate resistors > 10 Ω |
Applications
| Server Power Supply PFC Stage | Telecom Rectifier Module |
|---|---|
|
Use Scenario: Boost converter operating at 100–200 kHz in 3 kW front-end rectifier with active PFC. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage; handles 20 A RMS input current at 400 V DC bus. Use Value: Low Qg and fast trr reduce total switching loss by 18 % versus legacy 800 V MOSFETs, improving system efficiency from 95.2 % to 96.1 % at full load. |
Use Scenario: Isolated DC-DC stage in 48 V telecom rectifier with synchronous rectification on secondary side. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge primary; blocks 800 V reflected transients during fault conditions. Use Value: 127 mJ EAS rating withstands unclamped inductive spikes from transformer leakage inrush, eliminating need for snubber redesign. |
| Solar PV Inverter DC Link | Industrial Motor Drive Inverter |
|
Use Scenario: DC-link switching in string inverters handling 1000 V MPPT input with 20 kHz carrier frequency. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in three-phase inverter leg; operates with 10 V gate drive and 210 A/μs di/dt during freewheeling. Use Value: 51 pF Co(er) cuts turn-off loss by 22 % compared to standard 800 V devices, enabling 15 K temperature rise reduction on heatsink. |
Use Scenario: Half-bridge output stage in 15 kW induction heating inverter operating at 50–100 kHz. IC Role / Device Role / Timing Role: Fast-switching power switch with integrated body diode conducting reverse recovery current during commutation. Use Value: 127 ns trr limits diode reverse recovery peak current to <10 A, preventing shoot-through in gate drive timing margins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW20NK80Z | RDS(on) = 0.38 Ω (higher), Qg = 75 nC, no UIS rating specified | Lacks avalanche energy specification; requires external clamping in inductive loads | Lower cost option where avalanche ruggedness is not required and thermal budget allows higher RDS(on) |
| IXTH24N80L | RDS(on) = 0.19 Ω, Qg = 105 nC, trr = 210 ns (slower), EAS = 110 mJ | Higher switching loss due to larger Qg and slower diode; lower avalanche margin | Better suited for lower-frequency (<50 kHz) motor drives where diode speed is less critical |
Compared with STW20NK80Z and IXTH24N80L, SIHG24N80AEF-GE3 delivers superior balance of low conduction loss, fast diode recovery, and guaranteed avalanche ruggedness - making it the preferred choice for high-frequency, high-reliability PFC and inverter applications demanding both efficiency and fault tolerance.
Availability
SIHG24N80AEF-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.
Supply support for SIHG24N80AEF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The EF Series, including SIHG24N80AEF-GE3, was engineered specifically for high-voltage, high-frequency switching in energy-critical infrastructure - targeting PFC, telecom rectifiers, and renewable energy inverters where low RDS(on) × Qg and fast body diode response are decisive.
FAQ
What is the maximum continuous drain current rating for SIHG24N80AEF-GE3 at 100 °C case temperature?
The SIHG24N80AEF-GE3 has a maximum continuous drain current (ID) of 13 A when the case temperature (TC) is maintained at 100 °C. This rating is derived from its 208 W power dissipation limit and 0.6 °C/W junction-to-case thermal resistance, ensuring safe operation within the -55 °C to +150 °C junction temperature range. The SIHG24N80AEF-GE3 must be mounted on a heatsink capable of maintaining TC ≤ 100 °C under full-load conditions.
Does SIHG24N80AEF-GE3 have avalanche capability, and how is it specified?
Yes, SIHG24N80AEF-GE3 is fully rated for repetitive unclamped inductive switching (UIS) with a single-pulse avalanche energy (EAS) of 127 mJ under standardized test conditions (VDD = 140 V, L = 28.2 mH, Rg = 25 Ω, IAS = 3 A, starting TJ = 25 °C). This specification confirms robustness against inductive turn-off transients without external protection, a key requirement for SIHG24N80AEF-GE3 in PFC and motor drive applications.
What is the typical reverse recovery time (trr) of the body diode in SIHG24N80AEF-GE3, and under what conditions is it measured?
The typical reverse recovery time (trr) of the integral body diode in SIHG24N80AEF-GE3 is 127 ns, measured at TJ = 25 °C with forward current IF = IS = 10 A, di/dt = 100 A/μs, and reverse voltage VR = 400 V. This fast recovery characteristic is critical for minimizing commutation loss and voltage overshoot in bridge-leg configurations, directly supporting the SIHG24N80AEF-GE3's use in high-frequency resonant and hard-switched topologies.
Is SIHG24N80AEF-GE3 compatible with standard TO-247AC footprints and mounting hardware?
Yes, SIHG24N80AEF-GE3 uses the industry-standard TO-247AC package with 2.54 mm lead pitch and identical mechanical dimensions to JEDEC TO-247 variants. Its drain-connected tab requires electrical isolation from the heatsink via mica or ceramic washer, and the device is qualified for soldering at 260 °C peak for 10 seconds. Mounting torque and thermal interface material selection must follow Vishay's guidelines to maintain the SIHG24N80AEF-GE3's specified RthJC of 0.6 °C/W.
How does the effective output capacitance (Co(er)) of SIHG24N80AEF-GE3 impact switching performance?
The SIHG24N80AEF-GE3 features a low effective output capacitance (Co(er)) of 51 pF, measured from VDS = 0 V to 480 V. This parameter directly determines turn-off energy loss (Eoff ∝ Co(er) × VDS²), enabling up to 35 % lower switching loss than comparable 800 V MOSFETs. As a result, the SIHG24N80AEF-GE3 supports higher operating frequencies in PFC and inverter stages without compromising thermal performance.
SIHG24N80AEF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- EF
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 195mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 90 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1889 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 208W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
SIHG24N80AEF-GE3 FAQ
1.How can I place an order for SIHG24N80AEF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHG24N80AEF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHG24N80AEF-GE3 reliable?
The price and inventory of SIHG24N80AEF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG24N80AEF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHG24N80AEF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG24N80AEF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHG24N80AEF-GE3?
SIHG24N80AEF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHG24N80AEF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHG24N80AEF-GE3?
For technical support, including SIHG24N80AEF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG24N80AEF-GE3 requirements.
6.How does Aetrix verify that SIHG24N80AEF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHG24N80AEF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG24N80AEF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHG24N80AEF-GE3?
All SIHG24N80AEF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG24N80AEF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHG24N80AEF-GE3 part is unused and in its original packaging.
Return procedure for SIHG24N80AEF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIHG24N80AEF-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
