Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG24N80AE-GE3

Name: SIHG24N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHG24N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHG24N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG24N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 21A TO247AC

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:460

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHG24N80AE-GE3 from Vishay Siliconix is an 800 V, 21 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.160 Ω (typ. at V_GS = 10 V), Q_g = 59 nC (typ.), and avalanche-rated E_AS = 127 mJ - optimized for high-voltage switching in telecom power supplies, PFC stages, and PV inverters.

For engineers reviewing the SIHG24N80AE-GE3 datasheet, SIHG24N80AE-GE3 pinout, SIHG24N80AE-GE3 application, or SIHG24N80AE-GE3 equivalent, this device delivers low FOM (R_DS(on) × Q_g), reduced switching losses via low C_oss (65 pF) and Co(er) (52 pF), and robust unclamped inductive switching capability - critical for hard-switched SMPS designs operating above 400 V DC bus.

Technical Context

This MOSFET employs planar high-voltage silicon technology with optimized charge distribution to achieve low effective output capacitance (Co(er) = 52 pF) and fast switching (t_r = 44 ns typ., t_f = 51 ns typ.) under 640 V V_DS conditions. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures stable turn-on with standard 10 V gate drivers while maintaining noise immunity.

The integrated body diode exhibits t_rr = 476 ns (typ.) and Q_rr = 7.8 μC (typ.) at T_J = 25 °C, supporting moderate-frequency synchronous rectification and PFC boost operation. Thermal resistance R_thJC = 0.6 °C/W enables high-power dissipation in forced-air or heatsink-mounted configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 640 V DC bus designs with 25 % margin for voltage transients in telecom/PV applications
R_DS(on) typ.	0.160 Ω at V_GS = 10 V, I_D = 10 A - enables <1.6 W conduction loss at 10 A, reducing heatsink requirements
Q_g typ.	59 nC - lowers gate drive power and allows use of lower-current gate drivers (e.g., UCC27531)
E_AS	127 mJ - rated for repetitive unclamped inductive switching, essential for reliability in hard-switched PFC and motor drives
C_oss	65 pF - contributes to low switching loss and stable dv/dt performance (70 V/ns max at T_J = 125 °C)
t_r/t_f	44/51 ns typ. - supports >100 kHz switching frequencies in resonant and phase-shifted topologies
I_D cont. (T_C = 100 °C)	13 A - defines usable current in compact heatsink layouts without derating below 100 °C case temperature

Pinout & Package

SIHG24N80AE-GE3 uses the TO-247AC package - a 3-lead, through-hole, high-voltage power package with isolated drain tab, optimized for thermal transfer to external heatsinks and high-voltage creepage (>8 mm).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level gate drive; requires <60 nC total charge for full enhancement; sensitive to ESD (±30 V rating)
2 (Drain)	High-side power terminal	Connected to high-voltage DC bus (up to 800 V); electrically tied to metal tab for direct heatsink mounting
3 (Source)	Power return / reference node	Serves as local ground reference for gate driver; carries full load current (21 A continuous) and diode reverse recovery current

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	9.44 Ω·nC - reduces combined conduction + switching loss, enabling higher efficiency in 1–3 kW SMPS
Low effective output capacitance (Co(er))	52 pF - minimizes energy loss during turn-off (E_oss ∝ V² × C), improving light-load efficiency
Avalanche energy rating (E_AS)	127 mJ - guarantees safe operation during transient overcurrent events without requiring external snubbers
Reduced switching losses	Q_gd/Q_gs = 2.0 ratio - provides Miller plateau control for predictable dV/dt and reduced shoot-through risk in half-bridge designs
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912

Applications

Server Power Supply	Photovoltaic Inverter
Use Scenario: Primary-side switch in LLC resonant converter delivering 1.5 kW at 94 % efficiency with 380–400 V DC input. IC Role / Device Role / Timing Role: High-side switching element handling 12 A RMS current at 300 kHz; operates in ZVS region with controlled dv/dt. Use Value: Low Co(er) and 70 V/ns dv/dt rating suppress EMI generation and reduce gate driver stress during zero-voltage transitions.	Use Scenario: Boost-stage switch in string inverter converting 600–1000 V DC PV array output to 800 V DC link. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch conducting up to 21 A peak in discontinuous conduction mode (DCM) PFC. Use Value: 800 V V_DS rating and 127 mJ E_AS ensure reliable operation during grid fault-induced voltage surges and lightning transients.
Industrial Motor Drive	Fluorescent Ballast Lighting
Use Scenario: Inverter leg switch in 5 kW variable-frequency drive powering 3-phase induction motors in HVAC systems. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM stage; handles 13 A continuous current at T_C = 100 °C. Use Value: R_thJC = 0.6 °C/W and TO-247AC thermal pad enable direct heatsink mounting without thermal interface pads, simplifying mechanical design.	Use Scenario: Resonant half-bridge switch in electronic ballast driving 400 W HID lamps with 250 kHz switching frequency. IC Role / Device Role / Timing Role: Fast-switching power switch managing 10 A peak current and 600 V blocking during lamp ignition and steady-state operation. Use Value: Low Q_g (59 nC) and fast t_r/t_f minimize dead-time losses and improve lamp ignition reliability across temperature range.

Server Power Supply

Photovoltaic Inverter

Use Scenario: Primary-side switch in LLC resonant converter delivering 1.5 kW at 94 % efficiency with 380–400 V DC input.

IC Role / Device Role / Timing Role: High-side switching element handling 12 A RMS current at 300 kHz; operates in ZVS region with controlled dv/dt.

Use Value: Low Co(er) and 70 V/ns dv/dt rating suppress EMI generation and reduce gate driver stress during zero-voltage transitions.

Use Scenario: Boost-stage switch in string inverter converting 600–1000 V DC PV array output to 800 V DC link.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch conducting up to 21 A peak in discontinuous conduction mode (DCM) PFC.

Use Value: 800 V V_DS rating and 127 mJ E_AS ensure reliable operation during grid fault-induced voltage surges and lightning transients.

Industrial Motor Drive

Fluorescent Ballast Lighting

Use Scenario: Inverter leg switch in 5 kW variable-frequency drive powering 3-phase induction motors in HVAC systems.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM stage; handles 13 A continuous current at T_C = 100 °C.

Use Value: R_thJC = 0.6 °C/W and TO-247AC thermal pad enable direct heatsink mounting without thermal interface pads, simplifying mechanical design.

Use Scenario: Resonant half-bridge switch in electronic ballast driving 400 W HID lamps with 250 kHz switching frequency.

IC Role / Device Role / Timing Role: Fast-switching power switch managing 10 A peak current and 600 V blocking during lamp ignition and steady-state operation.

Use Value: Low Q_g (59 nC) and fast t_r/t_f minimize dead-time losses and improve lamp ignition reliability across temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW24N80K5	R_DS(on) = 0.18 Ω (typ.), Q_g = 65 nC, E_AS = 110 mJ, same TO-247 package	Higher conduction loss and lower avalanche rating limit use in high-reliability PFC or surge-prone PV environments	Preferred where cost sensitivity outweighs 12 % R_DS(on) penalty and 13 % lower E_AS
IXTH24N80L	R_DS(on) = 0.19 Ω (typ.), Q_g = 52 nC, E_AS = 105 mJ, TO-247 long leads	Lower Q_g improves gate drive efficiency but reduced avalanche margin and higher R_DS(on) increase thermal stress at full load	Suitable for space-constrained layouts needing shorter lead form, but requires tighter thermal management

Compared with STW24N80K5 and IXTH24N80L, SIHG24N80AE-GE3 offers the lowest R_DS(on) × Q_g FOM and highest E_AS, making it optimal for high-efficiency, high-reliability 800 V-class SMPS where thermal headroom and transient robustness are critical.

Availability

SIHG24N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for SIHG24N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SIHG24N80AE-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-voltage, high-efficiency switching in telecom, industrial, and renewable energy systems where low FOM and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current for SIHG24N80AE-GE3 at 100 °C case temperature?

The SIHG24N80AE-GE3 supports 13 A continuous drain current when the case temperature (T_C) is maintained at 100 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating from the 21 A value at T_C = 25 °C and must be validated with actual heatsink performance and ambient conditions in the final layout. SIHG24N80AE-GE3 achieves this using its 0.6 °C/W junction-to-case thermal resistance.

Does SIHG24N80AE-GE3 have avalanche capability, and how is it rated?

Yes, SIHG24N80AE-GE3 is fully rated for repetitive unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 127 mJ under defined test conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 3 A). This rating confirms robustness against transient overcurrents without external protection circuitry. SIHG24N80AE-GE3 meets Vishay's stringent avalanche qualification standards per document 92372.

What is the gate threshold voltage range for SIHG24N80AE-GE3, and why does it matter?

The gate-source threshold voltage (V_GS(th)) for SIHG24N80AE-GE3 is specified from 2 V to 4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing sufficient noise margin against false triggering in noisy power environments. SIHG24N80AE-GE3's V_GS(th) stability across temperature (ΔV_DS/T_J = 0.8 V/°C) further enhances system predictability in wide-temperature applications.

Can SIHG24N80AE-GE3 be used in place of a logic-level MOSFET?

No, SIHG24N80AE-GE3 is not a logic-level MOSFET; it requires V_GS = 10 V for full enhancement and specified R_DS(on). Its V_GS(th) minimum of 2 V does not imply compatibility with 3.3 V or 5 V microcontroller outputs. Driving SIHG24N80AE-GE3 directly from low-voltage logic will result in incomplete turn-on and excessive conduction loss. SIHG24N80AE-GE3 must be paired with a dedicated gate driver capable of sourcing/sinking ≥1 A peak current.

What is the reverse recovery performance of the body diode in SIHG24N80AE-GE3?

The integral body diode of SIHG24N80AE-GE3 has a typical reverse recovery time (t_rr) of 476 ns and reverse recovery charge (Q_rr) of 7.8 μC at T_J = 25 °C, I_F = 12 A, and di/dt = 100 A/μs. These values indicate moderate softness and are suitable for DCM PFC and non-synchronous flyback topologies, but not recommended for high-frequency synchronous rectification without external Schottky clamping. SIHG24N80AE-GE3's diode parameters are fully characterized in the datasheet's "Drain-Source Body Diode Characteristics" section.

SIHG24N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 184mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 89 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1836 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG24N80AE-GE3 FAQ

1.How can I place an order for SIHG24N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG24N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG24N80AE-GE3 reliable?

The price and inventory of SIHG24N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG24N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG24N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG24N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG24N80AE-GE3?

SIHG24N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG24N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG24N80AE-GE3?

For technical support, including SIHG24N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG24N80AE-GE3 requirements.

6.How does Aetrix verify that SIHG24N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG24N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG24N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG24N80AE-GE3?

All SIHG24N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG24N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG24N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHG24N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …