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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG25N40D-E3

Name: SIHG25N40D-E3
Brand: Vishay Siliconix
SKU: SIHG25N40D-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG25N40D-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG25N40D-E3.pdf

Description:: MOSFET N-CH 400V 25A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHG25N40D-E3 from Vishay Siliconix is a 400 V, 25 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.17 Ω at V_GS = 10 V, Q_g = 88 nC, and avalanche-rated (E_AS = 556 mJ). It serves as a high-voltage switching device in industrial SMPS, motor drives, and induction heating circuits.

For engineers reviewing the SIHG25N40D-E3 datasheet, SIHG25N40D-E3 pinout, SIHG25N40D-E3 application, or SIHG25N40D-E3 equivalent, this page delivers verified electrical parameters, thermal resistance (R_thJC = 0.45 °C/W), body diode recovery metrics (t_rr = 353 ns, Q_rr = 4.4 μC), and gate charge profile for hard-switched and resonant topologies.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage operation with low area-specific on-resistance and reduced capacitive switching losses. Its gate threshold voltage (V_GS(th) = 3–5 V) ensures reliable turn-on under standard 10 V gate drive, while dV/dt immunity of 24 V/ns at T_J = 125 °C supports robust noise immunity in high-di/dt environments.

The integrated body diode exhibits high ruggedness with I_SD = 24 A continuous and I_SM = 78 A pulsed capability, and is characterized for reverse recovery (t_rr, Q_rr, I_RRM) under standardized 100 A/μs dI/dt conditions. Thermal design is enabled by direct junction-to-case conduction path (R_thJC = 0.45 °C/W) and rated P_D = 278 W at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - Maximum blocking voltage before breakdown; enables use in 380 V AC rectified bus and 400 V DC link applications.
R_DS(on) max	0.17 Ω at V_GS = 10 V, I_D = 13 A - Defines conduction loss at rated current; contributes to <1.5 W I²R loss at 25 A.
Q_g max	88 nC - Total gate charge required for full turn-on; determines gate driver power and switching speed in hard-switched converters.
E_AS	556 mJ - Single-pulse avalanche energy rating; supports unclamped inductive switching without failure under defined test conditions.
t_rr	353 ns - Reverse recovery time of integral body diode at T_J = 25 °C, I_F = 13 A, dI/dt = 100 A/μs - Critical for synchronous rectification and ZVS design.
R_thJC	0.45 °C/W - Junction-to-case thermal resistance; enables accurate heatsink sizing when mounted with proper thermal interface material.
I_D continuous	25 A at T_C = 25 °C - Maximum steady-state drain current achievable with adequate case cooling; derates linearly above 25 °C.

Pinout & Package

TO-247AC package with isolated tab (Drain-connected), 3-terminal configuration, and industry-standard mechanical footprint per JEDEC outline. Mounting requires thermal compound and mechanical torque control (1.0–1.5 N·m) for optimal R_thJC.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives gate drive signal; high input impedance (R_g = 1.8 Ω typical) enables simple CMOS/TTL-compatible driver interface.
2 (Drain)	High-side power output	Connected to internal die backside and external heatsink tab; carries full load current and must be electrically isolated from PCB ground unless referenced to system high-side potential.
3 (Source)	Reference node / return path	Serves as common reference for gate drive and current sensing; connects to low-side switch node or shunt resistor in half-bridge configurations.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	15 Ω·nC - Enables high efficiency in both conduction and switching domains for 50–200 kHz SMPS designs.
Avalanche energy rating (E_AS)	556 mJ - Allows safe operation during transient overvoltage events without external snubbers in flyback or forward converters.
Body diode ruggedness	Rated for repetitive I_SD = 24 A and t_rr-based soft recovery - Supports bidirectional current handling in LLC resonant and phase-shifted full-bridge topologies.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2011/65/EU - Ensures environmental compliance for global industrial and consumer product certifications.
High dV/dt immunity	24 V/ns at T_J = 125 °C - Reduces risk of false turn-on in high-speed, high-noise power stages with fast-rising drain waveforms.

Applications

Industrial Motor Drives	Induction Heating Systems
Use Scenario: Half-bridge inverter stage driving 3-phase BLDC or induction motors up to 5 kW. IC Role / Device Role / Timing Role: High-side and low-side switching element with synchronized PWM control and body-diode commutation. Use Value: Low Q_g and fast t_rr reduce dead-time losses and improve torque linearity at 10–20 kHz switching frequencies.	Use Scenario: Resonant inverter bridge operating at 20–100 kHz for cooktop or industrial heating coils. IC Role / Device Role / Timing Role: Hard- or soft-switched power switch managing high di/dt currents and zero-voltage switching transitions. Use Value: Avalanche rating and rugged body diode enable reliable operation during resonance mismatches and load transients.
Welding Power Supplies	High-Voltage SMPS
Use Scenario: Primary-side switch in 5–20 kHz inverter-based arc welding inverters with 400 V DC bus. IC Role / Device Role / Timing Role: Main power switch handling pulsed 78 A peak currents and repetitive UIS stress during short-circuit events. Use Value: E_AS = 556 mJ and I_DM = 78 A support robust arc ignition and fault tolerance without desaturation protection.	Use Scenario: Primary switch in telecom or server PSUs with universal AC input and 400 V PFC front-end. IC Role / Device Role / Timing Role: High-voltage switching transistor in active clamp forward or LLC resonant converter primary leg. Use Value: 400 V V_DS margin accommodates 380 V rectified mains + 10% surge; low C_iss = 1707 pF minimizes gate drive loss.

Industrial Motor Drives

Induction Heating Systems

Use Scenario: Half-bridge inverter stage driving 3-phase BLDC or induction motors up to 5 kW.

IC Role / Device Role / Timing Role: High-side and low-side switching element with synchronized PWM control and body-diode commutation.

Use Value: Low Q_g and fast t_rr reduce dead-time losses and improve torque linearity at 10–20 kHz switching frequencies.

Use Scenario: Resonant inverter bridge operating at 20–100 kHz for cooktop or industrial heating coils.

IC Role / Device Role / Timing Role: Hard- or soft-switched power switch managing high di/dt currents and zero-voltage switching transitions.

Use Value: Avalanche rating and rugged body diode enable reliable operation during resonance mismatches and load transients.

Welding Power Supplies

High-Voltage SMPS

Use Scenario: Primary-side switch in 5–20 kHz inverter-based arc welding inverters with 400 V DC bus.

IC Role / Device Role / Timing Role: Main power switch handling pulsed 78 A peak currents and repetitive UIS stress during short-circuit events.

Use Value: E_AS = 556 mJ and I_DM = 78 A support robust arc ignition and fault tolerance without desaturation protection.

Use Scenario: Primary switch in telecom or server PSUs with universal AC input and 400 V PFC front-end.

IC Role / Device Role / Timing Role: High-voltage switching transistor in active clamp forward or LLC resonant converter primary leg.

Use Value: 400 V V_DS margin accommodates 380 V rectified mains + 10% surge; low C_iss = 1707 pF minimizes gate drive loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP24N40FIAG	R_DS(on) = 0.18 Ω (V_GS = 10 V), Q_g = 72 nC, E_AS = 480 mJ, TO-220FP package	Lower thermal performance (R_thJC ≈ 1.2 °C/W); unsuitable for >100 W continuous conduction without forced air	Prefer SIHG25N40D-E3 where higher power density, avalanche margin, or TO-247 thermal interface is required.
IXTH24N40L2	R_DS(on) = 0.19 Ω, Q_g = 65 nC, E_AS = 420 mJ, TO-247 non-isolated variant	No isolated tab; requires insulating mounting hardware; lower E_AS reduces margin in unclamped inductive loads	Choose SIHG25N40D-E3 for designs requiring drain-isolated mounting, higher avalanche robustness, or simplified heatsink integration.

Compared with STP24N40FIAG and IXTH24N40L2, SIHG25N40D-E3 delivers superior thermal dissipation (R_thJC = 0.45 °C/W), higher avalanche energy (556 mJ vs. ≤480 mJ), and guaranteed isolated TO-247AC packaging-making it preferred for high-reliability industrial inverters and welders demanding long-term thermal stability and fault resilience.

Availability

SIHG25N40D-E3 is available at Aetrix Electronics and suitable for industrial motor drives, induction heating systems, and high-voltage SMPS requiring stable component supply, long-lifecycle support, and traceable sourcing from authorized channels.

Supply support for SIHG25N40D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The SIHG25N40D-E3 belongs to Vishay's D Series high-voltage power MOSFET family, engineered for industrial-grade switching applications demanding high avalanche energy, low switching losses, and robust body diode performance in harsh thermal and electrical environments.

FAQ

What is the maximum continuous drain current rating for SIHG25N40D-E3 at 100 °C case temperature?

The SIHG25N40D-E3 supports 16 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and must be applied when heatsink temperature exceeds 25 °C. The SIHG25N40D-E3 maintains R_DS(on) stability across this range due to its positive V_DS temperature coefficient.

Does SIHG25N40D-E3 have an isolated drain tab, and why does that matter for PCB layout?

Yes, the SIHG25N40D-E3 uses a TO-247AC package with an electrically isolated drain tab, enabling direct mounting to a grounded heatsink without additional insulation. This simplifies thermal management and eliminates creepage/clearance risks in high-voltage designs. The SIHG25N40D-E3 isolation also avoids parasitic capacitance coupling between drain and chassis ground, improving EMI performance in SMPS layouts.

How does the body diode performance of SIHG25N40D-E3 compare to standard MOSFETs in synchronous rectification?

The SIHG25N40D-E3 features a rugged, fast-recovery body diode with t_rr = 353 ns and Q_rr = 4.4 μC at 100 A/μs dI/dt, significantly lower than generic high-voltage MOSFETs. This allows efficient operation in quasi-resonant and LLC topologies where body diode conduction occurs. The SIHG25N40D-E3 body diode is also rated for 24 A continuous and 78 A pulsed current, supporting high-current freewheeling without thermal runaway.

Can SIHG25N40D-E3 be used in avalanche mode repeatedly, and what limits its safe operation?

The SIHG25N40D-E3 is rated for single-pulse avalanche energy (E_AS = 556 mJ), not repetitive avalanche. Safe operation requires limiting pulse width, duty cycle, and junction temperature rise per pulse using the provided SOA curves and thermal transient impedance data. Repetitive avalanche stresses beyond datasheet limits may cause cumulative degradation. For SIHG25N40D-E3, ensure each avalanche event remains within the single-pulse E_AS boundary and that average power stays within P_D = 278 W.

What gate drive voltage is recommended for optimal R_DS(on) and switching speed in SIHG25N40D-E3?

Vishay specifies R_DS(on) = 0.17 Ω at V_GS = 10 V, and the SIHG25N40D-E3 gate threshold voltage (V_GS(th)) ranges from 3 V to 5 V. A 12–15 V gate drive is recommended to fully enhance the channel, minimize conduction loss, and achieve specified t_d(on)/t_d(off) values. Driving below 8 V risks incomplete turn-on and increased R_DS(on); exceeding ±30 V absolute maximum risks gate oxide damage. The SIHG25N40D-E3 gate charge (Q_g = 88 nC) dictates driver current capability requirements.

SIHG25N40D-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 170mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 88 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1707 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG25N40D-E3 FAQ

1.How can I place an order for SIHG25N40D-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG25N40D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG25N40D-E3 reliable?

The price and inventory of SIHG25N40D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG25N40D-E3 is usually 5 days.

3.What payment methods are accepted for SIHG25N40D-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG25N40D-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG25N40D-E3?

SIHG25N40D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG25N40D-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG25N40D-E3?

For technical support, including SIHG25N40D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG25N40D-E3 requirements.

6.How does Aetrix verify that SIHG25N40D-E3 is sourced from the original manufacturer or authorized distributors?

All SIHG25N40D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG25N40D-E3 meets industry standards.

7.What is the process for return or replacement of SIHG25N40D-E3?

All SIHG25N40D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG25N40D-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG25N40D-E3 part is unused and in its original packaging.

Return procedure for SIHG25N40D-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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