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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG25N40D-GE3

Name: SIHG25N40D-GE3
Brand: Vishay Siliconix
SKU: SIHG25N40D-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG25N40D-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG25N40D-GE3.pdf

Description:: MOSFET N-CH 400V 25A TO247AC

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Product details

Overview

SIHG25N40D-GE3 from Vishay Siliconix is a 400 V, 25 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.17 Ω at V_GS = 10 V, Q_g = 88 nC, and avalanche-rated (E_AS = 556 mJ). It serves as a high-voltage switching element in industrial SMPS, motor drives, and induction heating circuits.

For engineers reviewing the SIHG25N40D-GE3 datasheet, SIHG25N40D-GE3 pinout, SIHG25N40D-GE3 application, or SIHG25N40D-GE3 equivalent, key selection criteria include its 400 V V_DS, low R_DS(on) × Q_g figure-of-merit, robust body diode (t_rr = 353 ns, Q_rr = 4.4 μC), and TO-247AC thermal performance (R_thJC = 0.45 °C/W).

Technical Context

This device employs a planar vertical DMOS structure optimized for high-voltage switching with low conduction and capacitive switching losses. Its gate threshold voltage (V_GS(th) = 3–5 V) ensures reliable turn-on with standard 10 V gate drivers, while the low C_iss (1707 pF) and C_rss (19 pF) support fast, efficient hard-switching operation up to several hundred kHz.

The integrated body diode is rated for continuous 24 A and pulsed 78 A, with specified reverse recovery parameters (t_rr, Q_rr, I_RRM) enabling use in freewheeling and synchronous rectification roles. The device is fully avalanche-rated (E_AS = 556 mJ) and exhibits dV/dt immunity of 24 V/ns at T_J = 125 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - Withstands DC bus voltages up to 400 V in offline SMPS and motor drive applications.
R_DS(on) max	0.17 Ω at V_GS = 10 V - Enables <1.1 W conduction loss at 25 A, supporting high-efficiency power stages.
Q_g max	88 nC - Determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers.
E_AS	556 mJ - Guarantees ruggedness against unclamped inductive switching events without failure.
t_rr	353 ns - Enables predictable body diode commutation in bridge topologies with minimal voltage overshoot.
R_thJC	0.45 °C/W - Allows >250 W power dissipation with modest heatsinking (e.g., 1°C/W sink yields T_J ≈ 100°C at 278 W).
I_D cont @ T_C=25°C	25 A - Supports high-current output stages without parallel devices in many industrial designs.

Pinout & Package

SIHG25N40D-GE3 uses the TO-247AC package - a through-hole, high-power plastic package with isolated drain tab and three leads. Thermal resistance from junction to case is 0.45 °C/W, and the package meets JEDEC TO-247 outline with facility-code-specific dimensional variants (versions 1–3).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives gate drive signal; requires ≤10 V logic-level or standard 10–15 V supply; low C_iss enables fast edge rates.
2 (Drain)	High-side power terminal	Connected to high-voltage DC bus or inductive load; electrically tied to metal tab for thermal conduction and high-current path.
3 (Source)	Power return / reference node	Serves as common return for load current and gate drive reference; must be low-inductance layout to minimize switching noise.
Tab (Drain)	Primary drain connection & thermal path	Electrically identical to Pin 2; mounted to heatsink for thermal management; requires insulating pad if heatsink is grounded.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	15 Ω·nC - Reduces combined conduction and switching losses, improving efficiency in 50–200 kHz SMPS designs.
Avalanche energy rating	556 mJ - Eliminates need for external snubbers in inductive load switching, simplifying circuit design and improving reliability.
Body diode ruggedness	Rated for repetitive IS = 24 A and t_rr = 353 ns - Supports reliable freewheeling in half-bridge and LLC resonant converters without external diodes.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2011/65/EU - Ensures environmental compliance for global industrial and consumer product certifications.
Fast switching transitions	t_d(on) = 21–42 ns, t_r = 57–86 ns - Enables high-frequency operation with reduced dead-time requirements and lower EMI generation.

Applications

Industrial Motor Drives	Induction Heating Systems
Use Scenario: High-current half-bridge inverter driving 3-phase PMSM or induction motors up to 5 kW. IC Role / Device Role / Timing Role: Main switching device in upper/lower leg; handles 25 A RMS current and 400 V DC link voltage. Use Value: Low R_DS(on) minimizes I²R losses during continuous conduction mode; avalanche rating protects against motor back-EMF transients.	Use Scenario: Resonant inverter stage in domestic or commercial induction cooktops operating at 20–50 kHz. IC Role / Device Role / Timing Role: High-side switch in series-resonant topology; subjected to high di/dt and reverse recovery stress. Use Value: Fast, soft-recovery body diode (Q_rr = 4.4 μC) reduces switching loss and voltage spikes during zero-current switching transitions.
Welding Power Supplies	High-Voltage SMPS
Use Scenario: Primary-side switch in IGBT-assisted or all-MOSFET inverter-based arc welding inverters (1–20 kHz). IC Role / Device Role / Timing Role: Hard-switched power switch handling pulsed 78 A currents and 400 V bus voltage. Use Value: High pulsed current rating (I_DM = 78 A) and linear derating (2.2 W/°C) enable robust thermal response during intermittent high-load duty cycles.	Use Scenario: Primary switch in 1–3 kW telecom or industrial offline flyback or forward converters. IC Role / Device Role / Timing Role: Main power switch turning on/off 400 V DC input; operates with V_GS = 10 V gate drive. Use Value: Low input capacitance (C_iss = 1707 pF) reduces gate drive loss and improves efficiency at 100–200 kHz switching frequencies.

Industrial Motor Drives

Induction Heating Systems

Use Scenario: High-current half-bridge inverter driving 3-phase PMSM or induction motors up to 5 kW.

IC Role / Device Role / Timing Role: Main switching device in upper/lower leg; handles 25 A RMS current and 400 V DC link voltage.

Use Value: Low R_DS(on) minimizes I²R losses during continuous conduction mode; avalanche rating protects against motor back-EMF transients.

Use Scenario: Resonant inverter stage in domestic or commercial induction cooktops operating at 20–50 kHz.

IC Role / Device Role / Timing Role: High-side switch in series-resonant topology; subjected to high di/dt and reverse recovery stress.

Use Value: Fast, soft-recovery body diode (Q_rr = 4.4 μC) reduces switching loss and voltage spikes during zero-current switching transitions.

Welding Power Supplies

High-Voltage SMPS

Use Scenario: Primary-side switch in IGBT-assisted or all-MOSFET inverter-based arc welding inverters (1–20 kHz).

IC Role / Device Role / Timing Role: Hard-switched power switch handling pulsed 78 A currents and 400 V bus voltage.

Use Value: High pulsed current rating (I_DM = 78 A) and linear derating (2.2 W/°C) enable robust thermal response during intermittent high-load duty cycles.

Use Scenario: Primary switch in 1–3 kW telecom or industrial offline flyback or forward converters.

IC Role / Device Role / Timing Role: Main power switch turning on/off 400 V DC input; operates with V_GS = 10 V gate drive.

Use Value: Low input capacitance (C_iss = 1707 pF) reduces gate drive loss and improves efficiency at 100–200 kHz switching frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP24NM40	V_DS = 400 V, R_DS(on) = 0.18 Ω, Q_g = 72 nC, TO-220FP package	Lower power dissipation capability (PD = 100 W vs. 278 W); no isolated drain tab	Preferred where space-constrained PCB layout favors TO-220FP and thermal load is ≤100 W.
IXTH24N40L2	V_DS = 400 V, R_DS(on) = 0.185 Ω, Q_g = 62 nC, TO-247 package, logic-level (V_GS(th) = 2–4 V)	Lower gate threshold enables direct microcontroller drive but slightly higher R_DS(on) and lower E_AS (320 mJ)	Chosen when simplified gate drive (no level shifter) is prioritized over avalanche ruggedness and conduction loss.

Compared with STP24NM40 and IXTH24N40L2, SIHG25N40D-GE3 delivers superior thermal performance (R_thJC = 0.45 °C/W), highest avalanche energy (556 mJ), and lowest R_DS(on) × Q_g FOM-making it optimal for high-reliability, high-power industrial inverters where thermal margin and transient robustness are critical.

Availability

SIHG25N40D-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, induction heating systems, and high-voltage SMPS requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SIHG25N40D-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The D Series Power MOSFETs-including SIHG25N40D-GE3-are engineered for high-voltage industrial switching, emphasizing low R_DS(on) × Q_g, avalanche ruggedness, and body diode reliability in hard-switched and resonant topologies.

FAQ

What is the maximum continuous drain current rating for SIHG25N40D-GE3 at 100 °C case temperature?

The SIHG25N40D-GE3 supports 16 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits under real-world heatsink conditions and ensures safe operation within the 150 °C maximum junction temperature. Designers must verify actual T_C using R_thJC = 0.45 °C/W and system-level thermal modeling before finalizing layout and cooling.

Does SIHG25N40D-GE3 have a fully rated avalanche capability, and how is it specified?

Yes, SIHG25N40D-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 556 mJ, tested per standard unclamped inductive switching conditions (V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, I_AS = 17 A). This rating is guaranteed across the full operating temperature range and provides design margin against inductive kickback in motor drives and welding inverters without external protection.

What are the gate drive requirements for reliable operation of SIHG25N40D-GE3?

SIHG25N40D-GE3 requires a minimum V_GS of 10 V for full enhancement, with V_GS(th) specified between 3 V and 5 V. A gate driver capable of delivering ≥2 A peak current is recommended to achieve fast switching (t_r/t_f < 100 ns) given its Q_g = 88 nC. Gate resistor selection (e.g., 24.6 Ω in datasheet test) must balance switching speed against ringing and EMI.

How does the body diode performance of SIHG25N40D-GE3 compare to standard recovery diodes in bridge configurations?

The SIHG25N40D-GE3 body diode features t_rr = 353 ns and Q_rr = 4.4 μC at T_J = 25 °C, with I_RRM = 24 A. This soft, moderately fast recovery characteristic reduces voltage overshoot and switching loss compared to standard PN diodes, making it suitable for freewheeling in half-bridges-but not a substitute for ultrafast or SiC Schottky diodes in ZVS/ZCS resonant designs.

Is SIHG25N40D-GE3 halogen-free and RoHS-compliant, and what standards does it meet?

Yes, SIHG25N40D-GE3 is both halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2011/65/EU. The "-GE3" suffix explicitly denotes lead-free and halogen-free construction. These compliance attributes are verified per Vishay's internal material declarations and are documented in the official datasheet revision S12-0625-Rev. B.

SIHG25N40D-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 170mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 88 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1707 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG25N40D-GE3 FAQ

1.How can I place an order for SIHG25N40D-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG25N40D-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG25N40D-GE3 reliable?

The price and inventory of SIHG25N40D-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG25N40D-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG25N40D-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG25N40D-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG25N40D-GE3?

SIHG25N40D-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG25N40D-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG25N40D-GE3?

For technical support, including SIHG25N40D-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG25N40D-GE3 requirements.

6.How does Aetrix verify that SIHG25N40D-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG25N40D-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG25N40D-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG25N40D-GE3?

All SIHG25N40D-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG25N40D-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG25N40D-GE3 part is unused and in its original packaging.

Return procedure for SIHG25N40D-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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