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Vishay Siliconix SIHG28N60EF-GE3
- Part No.:
- SIHG28N60EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHG28N60EF-GE3.pdf
- Description:
- MOSFET N-CH 600V 28A TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:500
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Product details
Overview
SIHG28N60EF-GE3 from Vishay Siliconix is a 600 V, 28 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring ultra-low gate charge (80–120 nC), fast body diode (trr = 142–284 ns), and avalanche-rated ruggedness (EAS = 691 mJ). It serves as a primary switching device in high-efficiency LLC resonant and phase-shifted bridge power supplies for telecom and solar inverters.
For engineers reviewing the SIHG28N60EF-GE3 datasheet, SIHG28N60EF-GE3 pinout, SIHG28N60EF-GE3 application, or SIHG28N60EF-GE3 equivalent, key selection criteria include its 0.107 Ω RDS(on) at 10 V, low Qrr (0.97–1.94 μC), dV/dt immunity (70 V/ns), and thermal resistance (RthJC = 0.5 °C/W) - all critical for ZVS operation and high-power density designs.
Technical Context
This MOSFET employs Vishay's EF-series fast-body-diode technology to minimize reverse recovery losses in hard- and soft-switching topologies. Its low Ciss (2714 pF), Crss (6 pF), and Co(er) (98 pF) enable precise gate drive control and reduced EMI generation during high-frequency switching up to 500 kHz.
The device integrates an optimized body diode with controlled reverse recovery characteristics (Qrr, trr, IRRM) and is rated for unclamped inductive switching (UIS) under repetitive conditions. Its 600 V VDS rating and ±30 V VGS tolerance support robust operation in 400 V DC bus systems with transient overvoltage margins.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 600 V - supports 400 V DC bus with ≥50 % overvoltage margin for PV inverter and telecom rectifier applications |
| RDS(on) max | 0.123 Ω at VGS = 10 V, TJ = 25 °C - enables <1.5 W conduction loss at 14 A continuous current |
| Qg typ/max | 80 / 120 nC - reduces gate driver power demand and enables efficient 300–500 kHz switching in LLC converters |
| trr / Qrr | 142–284 ns / 0.97–1.94 μC - minimizes diode recovery loss and voltage overshoot in ZVS phase-shifted bridges |
| EAS | 691 mJ - ensures reliable operation under inductive load transients without derating in welding or battery charger SMPS |
| RthJC | 0.5 °C/W - allows >200 W power dissipation with standard heatsink interface, supporting high-current single-device solutions |
| dV/dt immunity | 70 V/ns at TJ = 125 °C - prevents spurious turn-on in high-dV/dt environments like motor drives and inverters |
Pinout & Package
SIHG28N60EF-GE3 is housed in a TO-247AC package with isolated drain tab, optimized for high-voltage isolation and thermal performance. The case outline conforms to JEDEC TO-247 with facility-specific variants (codes Y/N/9), and features a thermal pad (D1/E1 optional) and 3-pin lead assignment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Lead) | Gate | High-impedance MOSFET control input; requires <120 nC charge for full enhancement; sensitive to ESD |
| 2 (Tab) | Drain | Main high-side power terminal; electrically connected to metal tab for direct heatsinking and low-inductance layout |
| 3 (Lead) | Source | Power return path and gate reference node; connects to PCB ground plane to minimize switching loop inductance |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | Reduces reverse recovery energy by >50 % vs. standard MOSFETs, enabling ZVS in phase-shifted full-bridge without snubbers |
| Low Qg × RDS(on) FOM | 12.9 Ω·nC - balances switching speed and conduction loss for optimal efficiency across 100–500 kHz range |
| Avalanche-rated (UIS) | 691 mJ single-pulse rating - eliminates need for external clamping in inductive load switching circuits |
| Low Coss & Crss | Coss = 123 pF, Crss = 6 pF - improves voltage-dependent capacitance linearity and reduces Miller-induced oscillation risk |
| Pb-free & Halogen-free | RoHS-compliant construction with matte tin lead finish - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) |
Applications
| Telecom Server PSU | Solar PV Inverter |
|---|---|
Use Scenario: Primary switch in 3.5 kW telecom rectifier using phase-shifted full-bridge topology with 400 V DC bus. IC Role / Device Role / Timing Role: High-side synchronous switch operating at 100–200 kHz with zero-voltage switching; body diode conducts freewheeling current during dead time. Use Value: Low Qrr (0.97 μC) and fast trr (142 ns) reduce body diode conduction loss by 35 % versus standard 600 V MOSFETs, improving full-load efficiency by 0.4 %. | Use Scenario: Upper-leg switch in three-level NPC inverter stage converting 600–1000 V DC from PV array to 230 V AC grid. IC Role / Device Role / Timing Role: Hard-switched 600 V blocking device handling bidirectional current; avalanche rating protects against DC-link transients. Use Value: 600 V VDS + 691 mJ EAS withstands 1.2× DC-link overvoltage events without failure, eliminating need for TVS clamping on each switch leg. |
| LED Streetlight Driver | Industrial Battery Charger |
Use Scenario: Main switch in 400 W constant-current LED driver using asymmetric half-bridge with resonant tank. IC Role / Device Role / Timing Role: Resonant switch operating at 350 kHz; body diode provides controlled freewheeling during capacitive commutation. Use Value: Ultra-low Crss (6 pF) minimizes Miller feedback, enabling stable gate drive with minimal gate resistor (9.1 Ω), reducing driver loss by 22 %. | Use Scenario: Output rectification switch in 5 kW industrial Li-ion battery charger using LLC resonant converter with 400 V input. IC Role / Device Role / Timing Role: Synchronous rectifier replacement for secondary-side diodes; body diode conducts during startup before controller enables synchronous mode. Use Value: Low RDS(on) (0.107 Ω) cuts conduction loss by 60 % vs. Schottky diode solution, raising peak efficiency from 93.2 % to 94.8 % at 4 kW. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW28N60FD | Higher Qg (135 nC), higher RDS(on) (0.135 Ω), same VDS (600 V), slower trr (220–440 ns) | Less suitable for >300 kHz ZVS due to higher switching loss; lower EAS (520 mJ) | Prefer SIHG28N60EF-GE3 where high-frequency efficiency and avalanche robustness are prioritized |
| IXFH28N60X3 | Lower RDS(on) (0.115 Ω), lower Qg (75 nC), but no specified Qrr/trr data; same TO-247AC package | Lacks documented fast-body-diode performance; not validated for high-dI/dt freewheeling | Choose SIHG28N60EF-GE3 when body diode recovery behavior must be guaranteed per datasheet specs |
Compared with STW28N60FD and IXFH28N60X3, SIHG28N60EF-GE3 delivers superior ZVS capability via its verified low Qrr and trr, higher avalanche energy, and tighter RDS(on) distribution - making it the preferred choice for telecom, solar, and high-reliability industrial SMPS where body diode behavior directly impacts system efficiency and stress.
Availability
SIHG28N60EF-GE3 is available at Aetrix Electronics and suitable for telecom server PSUs, solar PV inverters, and industrial battery chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIHG28N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.
The EF Series MOSFETs, including SIHG28N60EF-GE3, were engineered specifically for high-frequency, high-efficiency resonant and soft-switching power conversion in telecom, renewable energy, and industrial systems.
FAQ
What is the maximum continuous drain current rating for SIHG28N60EF-GE3 at 100 °C case temperature?
The SIHG28N60EF-GE3 has a continuous drain current rating of 18 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating from the 28 A rating at TC = 25 °C and reflects real-world thermal constraints in enclosed power supplies. The linear derating factor is 2 W/°C above 25 °C, allowing accurate junction temperature estimation under load. SIHG28N60EF-GE3 must be mounted on a heatsink capable of maintaining TC ≤ 100 °C to sustain this current continuously.
Does SIHG28N60EF-GE3 support gate drive with 5 V logic-level signals?
No, SIHG28N60EF-GE3 is not a logic-level MOSFET; its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, and full enhancement requires VGS = 10 V to achieve the specified RDS(on) of 0.107 Ω. Driving it with only 5 V results in significantly higher on-resistance (>0.25 Ω), excessive conduction loss, and potential thermal runaway. SIHG28N60EF-GE3 must be driven with a 10–15 V gate-source voltage from a dedicated MOSFET driver IC or transformer-isolated gate driver stage.
What is the typical reverse recovery charge (Qrr) of the body diode in SIHG28N60EF-GE3, and how is it measured?
The typical reverse recovery charge (Qrr) of the SIHG28N60EF-GE3 body diode is 0.97 μC, measured at TJ = 25 °C with IF = IS = 14 A, dI/dt = 100 A/μs, and VR = 400 V. This parameter is extracted from the integrated area under the reverse recovery current waveform during diode commutation. SIHG28N60EF-GE3's low Qrr contributes directly to reduced switching loss and voltage overshoot in hard-commutated topologies such as phase-shifted bridges, distinguishing it from standard 600 V MOSFETs with Qrr > 2.5 μC.
Is SIHG28N60EF-GE3 suitable for use in a 3-level inverter topology, and why?
Yes, SIHG28N60EF-GE3 is explicitly listed in the Applications section for "3-level inverter" topologies. Its 600 V VDS rating, high dV/dt immunity (70 V/ns), low Crss (6 pF), and avalanche energy rating (691 mJ) make it suitable for neutral-point-clamped (NPC) and T-type 3-level inverters operating from 600–800 V DC links. SIHG28N60EF-GE3's fast body diode also supports controlled freewheeling paths in multilevel configurations where diode conduction occurs during voltage balancing intervals.
What thermal resistance values apply to SIHG28N60EF-GE3, and how do they impact heatsink design?
SIHG28N60EF-GE3 specifies a maximum junction-to-case thermal resistance (RthJC) of 0.5 °C/W and a maximum junction-to-ambient (RthJA) of 62 °C/W. For heatsink design, RthJC is the critical parameter: with PD = 250 W max, a 0.5 °C/W RthJC implies a maximum 125 °C temperature rise from junction to case - requiring a heatsink and thermal interface that keeps TC ≤ 25 °C to maintain TJ ≤ 150 °C. SIHG28N60EF-GE3's low RthJC enables compact thermal solutions compared to alternatives with RthJC > 0.8 °C/W.
SIHG28N60EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 123mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 120 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2714 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
SIHG28N60EF-GE3 FAQ
1.How can I place an order for SIHG28N60EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHG28N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHG28N60EF-GE3 reliable?
The price and inventory of SIHG28N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG28N60EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHG28N60EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG28N60EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHG28N60EF-GE3?
SIHG28N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHG28N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHG28N60EF-GE3?
For technical support, including SIHG28N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG28N60EF-GE3 requirements.
6.How does Aetrix verify that SIHG28N60EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHG28N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG28N60EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHG28N60EF-GE3?
All SIHG28N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG28N60EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHG28N60EF-GE3 part is unused and in its original packaging.
Return procedure for SIHG28N60EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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