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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG28N65EF-GE3

Name: SIHG28N65EF-GE3
Brand: Vishay Siliconix
SKU: SIHG28N65EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG28N65EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG28N65EF-GE3.pdf

Description:: MOSFET N-CH 650V 28A TO247AC

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Product details

Overview

SIHG28N65EF-GE3 from Vishay Siliconix is a 650 V, 28 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring fast body diode, ultra-low gate charge (97 nC typ.), and low R_DS(on) of 0.102 Ω at V_GS = 10 V. It is engineered for high-efficiency, high-frequency switching in telecom power supplies, solar inverters, and LLC resonant converters.

For engineers reviewing the SIHG28N65EF-GE3 datasheet, SIHG28N65EF-GE3 pinout, SIHG28N65EF-GE3 application, or SIHG28N65EF-GE3 equivalent, key selection criteria include its 427 mJ avalanche energy rating, 174 ns reverse recovery time, 3249 pF input capacitance, and suitability for zero-voltage switching topologies requiring robust body diode performance.

Technical Context

This E-series MOSFET employs optimized silicon process and cell layout to reduce Q_rr (1.1 μC typ.) and t_rr (174 ns typ.), enabling lower switching losses in hard- and soft-switching applications. Its low C_iss/C_oss ratio and 0.5 °C/W junction-to-case thermal resistance support high-power density designs.

The device integrates an avalanche-rated body diode with controlled dV/dt capability (11 V/ns) and operates across -55 °C to +150 °C junction temperature range. Gate threshold voltage (2.0–4.0 V) and ±30 V gate-source rating ensure compatibility with standard 10 V gate drivers and robust noise immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Supports 400 V AC rectified bus with 30 % margin for transient overvoltage in PV inverters and telecom SMPS.
R_DS(on) typ.	0.102 Ω @ 10 V - Enables <1.5 W conduction loss at 14 A DC, critical for thermal management in compact 250 W packages.
Q_g typ.	97 nC - Reduces gate drive power and allows use of smaller, lower-cost gate drivers in high-frequency (>100 kHz) operation.
t_rr	174 ns - Minimizes commutation loss and EMI in phase-shifted bridge and LLC topologies with fast diode recovery.
E_AS	427 mJ - Withstands unclamped inductive switching events without failure, supporting rugged design in welding and battery charger circuits.
C_iss	3249 pF - Low input capacitance improves Miller immunity and enables stable switching with moderate gate resistance (9.1 Ω).
I_D cont.	28 A @ T_C = 25 °C - Delivers high current capability in forced-air or heatsink-cooled industrial power stages.

Pinout & Package

Package: TO-247AC - Industry-standard high-voltage, high-current through-hole package with isolated drain tab, 0.5 °C/W R_thJC, and lead (Pb)-free/halogen-free finish per JEDEC outline.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 10 V logic-level gate drive; low Q_g ensures fast turn-on/turn-off with minimal driver stress.
2 (Drain)	High-side power terminal	Connected to heat sink via metal tab; electrically tied to drain; requires isolation from PCB ground plane.
3 (Source)	Reference node	Serves as return path for load current and gate drive reference; low-inductance layout essential for dv/dt stability.
4 (Drain)	Redundant drain connection	Second drain pin enhances current handling and thermal spreading; must be connected to same high-voltage node as Pin 2.

Key Features

Feature	Design Value
Fast body diode	174 ns t_rr and 1.1 μC Q_rr enable efficient freewheeling in bridge-leg configurations without external SiC diodes.
Low FOM (R_DS(on) × Q_g)	9.9 Ω·nC - Balances conduction and switching losses for optimal efficiency in 65–100 kHz SMPS designs.
Avalanche rated	427 mJ single-pulse UIS - Eliminates need for snubbers in inductive load switching, reducing BOM count and board space.
Ultra-low Q_gd	43 nC - Minimizes Miller plateau duration, improving dv/dt immunity and enabling reliable operation at high dV/dt (70 V/ns).
Low C_oss	145 pF - Reduces capacitive turn-off loss and supports ZVS operation in resonant topologies with predictable timing.

Applications

Telecom Power Supply	Solar PV Inverter
Use Scenario: Primary-side switch in 3.5 kW server PSU using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC bus with ZVS-assisted turn-on and body-diode-commutated turn-off. Use Value: 174 ns t_rr and low Q_rr reduce dead-time loss and improve full-load efficiency by ≥0.4 % vs. standard superjunction MOSFETs.	Use Scenario: DC-link switching stage in string inverter with 1000 V DC input and transformerless architecture. IC Role / Device Role / Timing Role: Unidirectional power switch in H-bridge leg, operating at 16–20 kHz with active body diode conduction during modulation. Use Value: 427 mJ E_AS withstands grid fault transients; 650 V rating provides safety margin above 1000 V DC system peak.
LED Driver	Industrial Battery Charger
Use Scenario: Switching element in constant-current 200 W LED driver using asymmetric half-bridge topology. IC Role / Device Role / Timing Role: High-frequency (150 kHz) PWM switch controlling output current via duty cycle; body diode conducts during off-time. Use Value: Fast t_rr prevents cross-conduction loss and audible noise; low C_iss ensures clean gate waveform with 25 Ω series resistor.	Use Scenario: Output stage switch in 5 kW EVSE onboard charger using three-level NPC topology. IC Role / Device Role / Timing Role: Medium-voltage (650 V) switching device managing bidirectional power flow between AC grid and 400 V battery pack. Use Value: 28 A continuous rating supports 5 kW at 94 % efficiency; TO-247AC package enables direct mounting to liquid-cooled cold plate.

Telecom Power Supply

Solar PV Inverter

Use Scenario: Primary-side switch in 3.5 kW server PSU using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC bus with ZVS-assisted turn-on and body-diode-commutated turn-off.

Use Value: 174 ns t_rr and low Q_rr reduce dead-time loss and improve full-load efficiency by ≥0.4 % vs. standard superjunction MOSFETs.

Use Scenario: DC-link switching stage in string inverter with 1000 V DC input and transformerless architecture.

IC Role / Device Role / Timing Role: Unidirectional power switch in H-bridge leg, operating at 16–20 kHz with active body diode conduction during modulation.

Use Value: 427 mJ E_AS withstands grid fault transients; 650 V rating provides safety margin above 1000 V DC system peak.

LED Driver

Industrial Battery Charger

Use Scenario: Switching element in constant-current 200 W LED driver using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: High-frequency (150 kHz) PWM switch controlling output current via duty cycle; body diode conducts during off-time.

Use Value: Fast t_rr prevents cross-conduction loss and audible noise; low C_iss ensures clean gate waveform with 25 Ω series resistor.

Use Scenario: Output stage switch in 5 kW EVSE onboard charger using three-level NPC topology.

IC Role / Device Role / Timing Role: Medium-voltage (650 V) switching device managing bidirectional power flow between AC grid and 400 V battery pack.

Use Value: 28 A continuous rating supports 5 kW at 94 % efficiency; TO-247AC package enables direct mounting to liquid-cooled cold plate.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW28N65M5	650 V, 28 A, R_DS(on) = 0.115 Ω, Q_g = 105 nC, t_rr = 220 ns - higher Q_rr and slower diode recovery.	Less suitable for high-frequency LLC where diode recovery dominates loss; better for cost-sensitive 65 kHz flyback.	Select STW28N65M5 only when diode speed is non-critical and gate drive strength exceeds 2 A peak.
IXFH28N65X3	650 V, 28 A, R_DS(on) = 0.105 Ω, Q_g = 85 nC, t_rr = 140 ns - lower Q_g but tighter V_GS(th) tolerance (2.5–3.5 V).	Better for low-duty-cycle burst-mode operation due to faster t_rr; less tolerant of gate noise in noisy industrial environments.	Choose IXFH28N65X3 when optimizing for minimum switching loss below 100 kHz and gate drive is well-filtered.

Compared with STW28N65M5 and IXFH28N65X3, SIHG28N65EF-GE3 offers the best balance of diode speed (174 ns), gate charge (97 nC), and avalanche ruggedness (427 mJ), making it preferred for ZVS-enabled telecom and solar systems where reliability under transient stress is critical.

Availability

SIHG28N65EF-GE3 is available at Aetrix Electronics and suitable for telecom power supplies, solar PV inverters, and industrial battery chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHG28N65EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The E Series power MOSFET product line, including SIHG28N65EF-GE3, was designed specifically for high-frequency, high-efficiency switching applications in server PSUs, renewable energy inverters, and industrial motor drives where fast body diode performance and low switching loss are mandatory.

FAQ

What is the maximum continuous drain current rating for SIHG28N65EF-GE3 at 100 °C case temperature?

The SIHG28N65EF-GE3 has a continuous drain current rating of 18 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-247AC package and ensures safe operation within its 250 W maximum power dissipation limit. Engineers must verify heatsink design to maintain T_C ≤ 100 °C under full load to sustain this current level reliably.

Does SIHG28N65EF-GE3 support gate drive voltages below 10 V?

Yes, SIHG28N65EF-GE3 has a gate threshold voltage range of 2.0–4.0 V, allowing operation with gate drive voltages as low as 5 V. However, R_DS(on) increases significantly below 10 V - e.g., at V_GS = 5 V, R_DS(on) is not characterized and may exceed 0.25 Ω. For guaranteed 0.102 Ω performance and low switching loss, 10 V gate drive is recommended per the SIHG28N65EF-GE3 datasheet specifications.

Is SIHG28N65EF-GE3 suitable for use in phase-shifted bridge (PSB) topologies?

Yes, SIHG28N65EF-GE3 is explicitly qualified for phase-shifted bridge applications, as confirmed in its Applications section and dynamic parameter characterization. Its fast body diode (t_rr = 174 ns), low Q_rr (1.1 μC), and 70 V/ns dV/dt rating enable reliable ZVS operation and minimize circulating current loss during dead-time intervals in PSB converters.

What is the thermal resistance from junction to case (R_thJC) for SIHG28N65EF-GE3?

The SIHG28N65EF-GE3 has a maximum junction-to-case thermal resistance (R_thJC) of 0.5 °C/W, measured from junction to the drain tab. This low value enables efficient heat transfer to external heatsinks and is critical for maintaining T_J ≤ 150 °C in high-power-density designs. The value is validated per JEDEC test conditions and applies to the TO-247AC package with proper mounting pressure and thermal interface material.

Can SIHG28N65EF-GE3 replace older generation 650 V MOSFETs like the SIHP28N60E in existing designs?

SIHG28N65EF-GE3 is not a direct drop-in replacement for SIHP28N60E due to differences in voltage rating (650 V vs. 600 V), gate charge profile, and body diode characteristics. While both share TO-247AC packaging and pinout, the SIHG28N65EF-GE3's lower Q_g and faster t_rr require gate drive tuning. System-level validation of switching waveforms, thermal performance, and avalanche behavior is required before substitution in legacy designs.

SIHG28N65EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 117mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 146 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3249 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG28N65EF-GE3 FAQ

1.How can I place an order for SIHG28N65EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG28N65EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG28N65EF-GE3 reliable?

The price and inventory of SIHG28N65EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG28N65EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG28N65EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG28N65EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG28N65EF-GE3?

SIHG28N65EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG28N65EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG28N65EF-GE3?

For technical support, including SIHG28N65EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG28N65EF-GE3 requirements.

6.How does Aetrix verify that SIHG28N65EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG28N65EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG28N65EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG28N65EF-GE3?

All SIHG28N65EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG28N65EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG28N65EF-GE3 part is unused and in its original packaging.

Return procedure for SIHG28N65EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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