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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG30N60E-E3

Name: SIHG30N60E-E3
Brand: Vishay Siliconix
SKU: SIHG30N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG30N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG30N60E-E3.pdf

Description:: MOSFET N-CH 600V 29A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHG30N60E-E3 from Vishay Siliconix is a 600 V, 29 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.125 Ω at V_GS = 10 V, Q_g = 130 nC max, and avalanche-rated (E_AS = 690 mJ). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHG30N60E-E3 datasheet, SIHG30N60E-E3 pinout, SIHG30N60E-E3 application, or SIHG30N60E-E3 equivalent, key selection criteria include its 600 V V_DS, 0.125 Ω R_DS(on), 130 nC gate charge, TO-247AC thermal performance (R_thJC = 0.5 °C/W), and UIS ruggedness - all critical for hard-switched industrial and renewable energy inverters.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage switching with low gate charge and reduced C_iss (2600 pF typ). Its body diode exhibits t_rr = 402–605 ns and Q_rr = 7–15 μC, enabling moderate-frequency hard-switching without excessive diode loss.

The device operates with V_GS(th) = 2.0–4.0 V and g_fs = 5.4 S typ, supporting standard 10 V gate drive. Its SOA is defined up to 100 μs pulse width at T_C = 25 °C, with linear derating beyond 250 W at 2 W/°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in PFC and solar inverters
R_DS(on) max	0.125 Ω at V_GS = 10 V - enables <1.8 W conduction loss at 15 A continuous drain current
Q_g max	130 nC - reduces gate drive power requirement and enables >100 kHz operation with moderate R_g
E_AS	690 mJ - ensures single-pulse unclamped inductive switching survivability in motor drives and welders
R_thJC	0.5 °C/W - allows 250 W dissipation with ≤125 °C junction rise above 25 °C case temperature
t_rr	402–605 ns - limits reverse recovery loss during commutation in bridge-leg configurations
I_D cont @ T_C = 100 °C	18 A - defines usable current capability in thermally constrained heatsink environments

Pinout & Package

SIHG30N60E-E3 uses the TO-247AC package: isolated tab (Drain), 3-pin through-hole outline with 5.51 mm lead pitch, 20.55 mm length, and 15.70 mm width. Thermal pad on backside provides low R_thJC path.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 10 V logic-level gate drive; input capacitance C_iss = 2600 pF requires careful layout to avoid oscillation
2 (Drain)	Main high-side current path	Connected to heat sink via isolated tab; carries full load current and withstands 600 V transients
3 (Source)	Reference node for gate drive and current sensing	Serves as return path for ID and IS; must be low-inductance for stable switching and accurate RDS(on) measurement

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	16.25 Ω·nC - balances conduction and switching loss for optimal efficiency in 50–200 kHz PFC stages
Avalanche energy rating	690 mJ single-pulse - eliminates need for external snubbers in inductive load switching
Body diode Q_rr	7–15 μC - minimizes commutation loss in synchronous rectification and half-bridge topologies
High dV/dt immunity	70 V/ns - suppresses false turn-on in high-noise motor drive and welding applications
Lead (Pb)-free & halogen-free	E3 suffix confirms RoHS-compliant termination and JEDEC-compliant reflow profile compatibility

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Active clamp forward or LLC resonant converter primary switch in 1–3 kW rack-mounted servers. IC Role / Device Role / Timing Role: High-side main switching element handling 380–400 V DC bus with 100–300 kHz switching. Use Value: Low Q_g and R_DS(on) reduce total losses by ≥8 % vs. legacy 650 V MOSFETs, improving 80 PLUS Titanium efficiency compliance.	Use Scenario: DC-link switching stage in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in two-level inverter legs operating at 16–20 kHz. Use Value: 600 V rating and E_AS rating enable direct replacement without bus voltage derating or snubber redesign.
Industrial Motor Drive	LED Streetlight Driver
Use Scenario: Inverter output stage for 3–7.5 kW variable frequency drives powering HVAC compressors and pumps. IC Role / Device Role / Timing Role: Phase-leg switch subjected to repetitive inductive turn-off stress and body diode commutation. Use Value: Controlled t_rr and low Q_rr reduce diode-induced shoot-through risk and thermal stress during PWM dead-time transitions.	Use Scenario: Buck-boost PFC + flyback secondary stage in outdoor-rated 150–300 W LED drivers for street lighting. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant topology operating at 65–130 kHz with wide line-voltage input. Use Value: 0.125 Ω R_DS(on) maintains >94 % efficiency across universal AC input range while meeting IEC 61000-3-2 Class C harmonics.

Server Power Supply

Solar PV Inverter

Use Scenario: Active clamp forward or LLC resonant converter primary switch in 1–3 kW rack-mounted servers.

IC Role / Device Role / Timing Role: High-side main switching element handling 380–400 V DC bus with 100–300 kHz switching.

Use Value: Low Q_g and R_DS(on) reduce total losses by ≥8 % vs. legacy 650 V MOSFETs, improving 80 PLUS Titanium efficiency compliance.

Use Scenario: DC-link switching stage in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in two-level inverter legs operating at 16–20 kHz.

Use Value: 600 V rating and E_AS rating enable direct replacement without bus voltage derating or snubber redesign.

Industrial Motor Drive

LED Streetlight Driver

Use Scenario: Inverter output stage for 3–7.5 kW variable frequency drives powering HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Phase-leg switch subjected to repetitive inductive turn-off stress and body diode commutation.

Use Value: Controlled t_rr and low Q_rr reduce diode-induced shoot-through risk and thermal stress during PWM dead-time transitions.

Use Scenario: Buck-boost PFC + flyback secondary stage in outdoor-rated 150–300 W LED drivers for street lighting.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant topology operating at 65–130 kHz with wide line-voltage input.

Use Value: 0.125 Ω R_DS(on) maintains >94 % efficiency across universal AC input range while meeting IEC 61000-3-2 Class C harmonics.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW30NM60ND	600 V, 30 A, R_DS(on) = 0.135 Ω, Q_g = 110 nC, TO-247 long leads	Lower Q_g but higher R_DS(on); slightly lower E_AS (620 mJ)	Preferred where gate drive loss dominates; verify thermal interface compatibility due to different lead form factor
IXFH30N60P	600 V, 30 A, R_DS(on) = 0.130 Ω, Q_g = 125 nC, TO-247 non-isolated tab	Non-isolated Drain tab requires insulating washer; identical SOA and avalanche rating	Use when cost sensitivity outweighs isolation requirement; heatsink mounting must accommodate electrical isolation

Compared with STW30NM60ND and IXFH30N60P, SIHG30N60E-E3 offers the lowest R_DS(on) (0.125 Ω) and highest E_AS (690 mJ), making it optimal for thermally demanding, high-reliability PFC and inverter applications where conduction loss and ruggedness are prioritized over minimal gate charge.

Availability

SIHG30N60E-E3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for SIHG30N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and power efficiency.

The E Series power MOSFETs, including SIHG30N60E-E3, were engineered for high-voltage switching in telecom, industrial, and renewable energy systems where low FOM and avalanche robustness are essential design requirements.

FAQ

What is the maximum continuous drain current for SIHG30N60E-E3 at 100 °C case temperature?

The maximum continuous drain current for SIHG30N60E-E3 is 18 A when the case temperature (T_C) is 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 29 A rating at 25 °C and ensures safe operation within the device's SOA under sustained load conditions. SIHG30N60E-E3 must be mounted on an adequately sized heatsink to maintain T_C ≤ 100 °C in production use.

Does SIHG30N60E-E3 have a fully rated avalanche capability?

Yes, SIHG30N60E-E3 is fully rated for single-pulse unclamped inductive switching with E_AS = 690 mJ at T_J = 25 °C, per test condition V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 7 A. This rating is validated and guaranteed in the datasheet, confirming SIHG30N60E-E3's suitability for circuits subject to inductive energy storage without external protection.

What is the gate threshold voltage range for SIHG30N60E-E3?

The gate-source threshold voltage (V_GS(th)) for SIHG30N60E-E3 is specified as 2.0 V minimum, 2.8 V typical, and 4.0 V maximum at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing unintended conduction from noise coupling. SIHG30N60E-E3 does not support logic-level (5 V) drive without gate boosting.

Can SIHG30N60E-E3 be used in parallel configurations?

SIHG30N60E-E3 supports paralleling due to its positive R_DS(on) temperature coefficient (0.64 V/°C), which promotes current sharing across devices. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors to dampen oscillation. SIHG30N60E-E3's low Crss (3 pF) further enhances dynamic stability in multi-device arrangements.

What is the thermal resistance from junction to case for SIHG30N60E-E3?

The maximum junction-to-case thermal resistance (R_thJC) for SIHG30N60E-E3 is 0.5 °C/W, measured from junction to the drain tab. This low value enables efficient heat transfer to external heatsinks and supports 250 W maximum power dissipation at T_C = 25 °C. SIHG30N60E-E3's TO-247AC package design ensures repeatable thermal performance across manufacturing lots.

SIHG30N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2600 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG30N60E-E3 FAQ

1.How can I place an order for SIHG30N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG30N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG30N60E-E3 reliable?

The price and inventory of SIHG30N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG30N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHG30N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG30N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG30N60E-E3?

SIHG30N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG30N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG30N60E-E3?

For technical support, including SIHG30N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG30N60E-E3 requirements.

6.How does Aetrix verify that SIHG30N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHG30N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG30N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHG30N60E-E3?

All SIHG30N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG30N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG30N60E-E3 part is unused and in its original packaging.

Return procedure for SIHG30N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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